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3 BSP295
SIPMOS Small-Signal-Transistor
Feature Product Summary
N-Channel VDS 60 V
3
2
1 VPS05163
Page 1 2007-02-07
Rev 1.3 BSP295
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - soldering point RthJS - 15 25 K/W
SMD version, device on PCB: RthJA
@ min. footprint - 80 115
@ 6 cm 2 cooling area 1) - 48 70
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2 2007-02-07
Rev 1.3 BSP295
Electrical Characteristics, at Tj = 25 C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance gfs VDS2*ID*RDS(on)max, 0.8 1.7 - S
ID=1.44A
Reverse Diode
Inverse diode continuous IS TA=25C - - 1.8 A
forward current
Inv. diode direct current, pulsed ISM - - 7.2
Inverse diode forward voltage VSD VGS=0, IF = IS - 0.84 1.3 V
Reverse recovery time trr VR=25V, I F=lS , - 36 45 ns
Reverse recovery charge Qrr diF/dt=100A/s - 38 48 nC
Page 3 2007-02-07
Rev 1.3 BSP295
1.6 1.6
1.4 1.4
P tot
1.2 1.2
ID
1 1
0.8 0.8
0.6 0.6
0.4 0.4
0.2 0.2
0 0
0 20 40 60 80 100 120 C 160 0 20 40 60 80 100 120 C 160
TA TA
/ID
S
VD K/W
A =
o n)
S(
RD
1 ms 10 1
Z thJA
0
10
ID
10 ms
10 0
D = 0.50
0.20
-1 0.10
10
single pulse 0.05
10 -1
0.02
DC 0.01
10 -2 0 1 2
10 -2 -5 -4 -3 -2 -1 0 1 2 4
10 10 V 10 10 10 10 10 10 10 10 10 s 10
VDS tp
Page 4 2007-02-07
Rev 1.3 BSP295
7V 5V
3 10V 6V
1.4 7V
2.7
R DS(on)
10V
3.8V 1.2
2.4
ID
2.1
1
1.8
3.4V
0.8
1.5
3V
1.2 0.6
0 0
0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 0 0.6 1.2 1.8 2.4 A 3.6
VDS ID
A S
gfs
ID
1.5 1.5
1 1
0.5 0.5
0 0
0 0.5 1 1.5 2 2.5 3 V 4 0 0.6 1.2 1.8 2.4 V 3.6
VGS ID
Page 5 2007-02-07
Rev 1.3 BSP295
1.8
0.6
R DS(on)
V GS(th)
0.55 1.6
0.5 typ.
1.4
0.45
0.4 1.2
0.35 98% 1
0.3 2%
0.8
0.25
typ
0.2 0.6
0.15
0.4
0.1
0.2
0.05
0 0
-60 -20 20 60 100 C 180 -60 -20 20 60 100 C 160
Tj Tj
A
Ciss
pF
10 0
Coss
IF
C
2
10
Crss
10 -1
Tj = 25 C typ
Tj = 150 C typ
Tj = 25 C (98%)
Tj = 150 C (98%)
1
10 10 -2
0 5 10 15 20 V 30 0 0.4 0.8 1.2 1.6 2 2.4 V 3
VDS VSD
Page 6 2007-02-07
Rev 1.3 BSP295
V
mJ
12
V GS
E AS
40
10
30 8
6
20
0.2 VDS max
4
0.5 VDS max
10
2 0.8 VDS max
0 0
20 40 60 80 100 120 C 160 0 4 8 12 16 nC 24
Tj QG
BSP295
60
V
57
V (BR)DSS
56
55
54
53
52
51
50
49
48
47
46
45
-60 -20 20 60 100 C 180
Tj
Page 7 2007-02-07
Rev 1.3 BSP295
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 Mnchen
Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Page 8 2007-02-07