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  • High Current Silicon Darlington Transistors NTE2349 & NTE2350

    Transféré par

    Saem Bach
    25 vues2 pages
    The document describes NTE2349 and NTE2350 silicon Darlington transistors. They are high current, general purpose transistors in a TO3 package for use as output devices in amplifier applications. They can handle currents up to 50A continuously and 100A peak, with high DC current gain down to low currents. They have diode protection and a built-in base-emitter shunt resistor, and can operate from -55°C to 200°C junction temperature.

    Description originale:

    transistor

    Titre original

    Nte 2349

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    The document describes NTE2349 and NTE2350 silicon Darlington transistors. They are high current, general purpose transistors in a TO3 package for use as output devices in amplifier applications. They can handle currents up to 50A continuously and 100A peak, with high DC current gain down to low currents. They have diode protection and a built-in base-emitter shunt resistor, and can operate from -55°C to 200°C junction temperature.

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    © All Rights Reserved
    Téléchargez comme PDF, TXT ou lisez en ligne sur Scribd
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    25 vues2 pages

    High Current Silicon Darlington Transistors NTE2349 & NTE2350

    Transféré par

    Saem Bach
    The document describes NTE2349 and NTE2350 silicon Darlington transistors. They are high current, general purpose transistors in a TO3 package for use as output devices in amplifier applications. They can handle currents up to 50A continuously and 100A peak, with high DC current gain down to low currents. They have diode protection and a built-in base-emitter shunt resistor, and can operate from -55°C to 200°C junction temperature.

    Droits d'auteur :

    © All Rights Reserved
    Téléchargez comme PDF, TXT ou lisez en ligne sur Scribd
    Signaler comme contenu inapproprié
    sur 2

    NTE2349 (NPN) & NTE2350 (PNP)

    Silicon Darlington Transistors


    High Current, General Purpose
    Description:
    The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3
    type package designed for use as output devices in general purpose amplifier applications.

    Features:
    D High DC Current Gain: hFE = 1000 (Min) @ IC = 25A
    hFE = 400 (Min) @ IC = 50A
    D Diode Protection to Rated IC
    D Monolithic Construction w/BuiltIn BaseEmitter Shunt Resistor
    D Junction Temperature to +200C

    Absolute Maximum Ratings:


    CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
    CollectorBase Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
    EmitterBase Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
    Collector Current, IC
    Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A
    Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A
    Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
    Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300W
    Derate Above 25C @ TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.71W/C
    Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +200C
    Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +200C
    Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.584C
    Lead Temperature (During Soldering, 10sec Max), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +275C

    Electrical Characteristics: (TC = +25C unless otherwise specified)


    Parameter Symbol Test Conditions Min Typ Max Unit
    OFF Characteristics
    CollectorEmitter Breakdown Voltage V(BR)CEO IC = 100mA, IB = 0 120 V
    CollectorEmitter Leakage Current ICER VCE = 120V, RBE = 1k 2 mA
    VCE = 120V, RBE = 1k, TC = +150C 10 mA
    ICEO VCE = 50V, IB = 0 2 mA
    Emitter Cutoff Current IEBO VBE = 5V, IC = 0 2 mA
    Electrical Characteristics (Contd): (TC = +25C unless otherwise specified)
    Parameter Symbol Test Conditions Min Typ Max Unit
    ON Characteristics (Note 1)
    DC Current Gain hFE IC = 25A, VCE = 5V 1000 18000
    IC = 50A, VCE = 5V 400
    CollectorEmitter Saturation Voltage VCE(sat) IC = 25A, IB = 250mA 2.5 V
    IC = 50A, IB = 500mA 3.5 V
    BaseEmitter Saturation Voltage VBE(sat) IC = 25A, IB = 200mA 3.0 V
    IC = 50A, IB = 300mA 4.5 V

    Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%.

    Schematic Diagram

    C C
    B B

    E E
    NPN PNP

    .135 (3.45) Max


    .350 (8.89) .875 (22.2)
    Dia Max
    Seating
    Plane

    .312 (7.93) Min .061 (1.55) Max

    Emitter 1.187
    (30.16)
    .215 (5.45) .665
    (16.9)
    .156 (3.96) Dia
    (2 Holes)
    .430
    (10.92)
    .188 (4.8) R Max

    .525 (13.35) R Max


    Base Collector/Case

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