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PO WE R SEM IC O ND UC TO R S
KBU600 KBU610
6.0A BRIDGE RECTIFIER
Features
! Diffused Junction A
! Low Forward Voltage Drop B C KBU
! High Current Capability D Dim Min Max
! High Reliability A 22.70 23.70
! High Surge Current Capability K L B 3.80 4.10
! Ideal for Printed Circuit Boards - ~ ~ + E C 4.20 4.70
! UL Recognized File # E157705 D 1.70 2.20
E 10.30 11.30
J G G 4.50 6.80
H 4.60 5.60
Mechanical Data
J 25.40
! Case: Molded Plastic H K 19.30
! Terminals: Plated Leads Solderable per M L 16.80 17.80
MIL-STD-202, Method 208 M 6.60 7.10
! Polarity: As Marked on Body N 4.70 5.20
! Weight: 8.0 grams (approx.) P 1.20 1.30
! Mounting Position: Any All Dimensions in mm
! Marking: Type Number
N
4 10
2 1.0
1
Single Phase Half Wave Tj = 25C
60 Hz Resistive or Inductive Load Pulse Width = 300 ms
0 0.1
20 40 60 80 100 120 140 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
TC, CASE TEMPERATURE (C) VF, INSTANTANEOUS FWD VOLTAGE (V)
Fig. 1 Forward Current Derating Curve Fig. 2 Typical Forward Characteristics, per element
250 400
IFSM, PEAK FWD SURGE CURRENT (A)
200
150 100
100
50
8.3ms Single Half Sine-Wave Tj = 25C
JEDEC Method f = 1MHz
0 10
1 10 100 1 10 100
NUMBER OF CYCLES AT 60 Hz VR, REVERSE VOLTAGE (V)
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current Fig. 4 Typical Junction Capacitance Per Element
IR, INSTANTANEOUS REVERSE CURRENT (mA)
10
Tj = 100C
1.0
0.1
Tj = 25C
0.01
0 20 40 60 80 100 120 140
RATED PERCENT OF PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
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responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to
manufacturer. WTE reserves the right to change any or all information herein without further notice.
WARNING: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in life
support devices or systems without the express written approval.
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