Diode

wishes:
High blocking capability
Small froward voltage drop,
fast switching behavior ,
High current density
=>like ideal switch
 Diode PIN (positive intrinsic
negative diode)
Layer sequence: p+, p, n-(i),
n+
(A: Anode, K: Kathode)
-> between p- und n- region (heavily doped)
Is a long, lightly doped region
->during cut off: wide space charge region
This means small field strenght intensity

-> conductin operation: p-region injects holes, n-region injects electron

into the middle low doped region, the intrinsic "i" region is flooded
with charge carriers from the "p" and "n" regions
Charge carrier density >> doping concentration
=>the resistor R becomes smaller with increasing current density
 Diode: structure and doping
concentration
Doping concentration

lot of stored charge in the intrinsic region

 Diode
off state , VD<0
Conducting state VD >0

inverse
leakage
current due
generation

Space charge region

uncompensated ions

Elektronen (__) und holesdensities (+) source: R. Kraus: Halbleiterbauelemente der

Leistungselektronik, Habilitationsschrift
UniBw-Mnchen
Diode carries current. If the Diodevoltage changes abrupt to blocking voltage,
the current will change its sign untiln the space charge is applied for
blocking the diode. It is necessary to make a carrier displacement. This is
called recocvery charge. A current in blocking direction is necessary for
this. After this, the Diode is available to takes blocking voltage over. This
results into a reverse recovery current peak.
Diode, dynamic definitions
 Diode characteristics
-The diode conducting voltage-current characteristic is very temperature
depedent!!

the leakage current rises with rising temperature due to the charge carrier
generation it is 100 times bigger at 120 then at 25

The forward voltage VD decreases with increasing temperature

k B. T N A.N D
UD . ln
q 2
ni

T T 0
3 47.9.
Inversion density (Si) 2 19. T T 6
ni 6 , 9. 10 .e . cm
T0

Bolzman konstant: k 1.38. 10

23 .
V. A . s . K
1

19 .
Elementary charge: q 1.602. 10 As
Datasheet forward characteristics
PIN-Diode
600V/10A
 Diode, dynamisch

Behaviour depends on forward current, temperature, outer wiring, di/dt,

blocking voltage.
The reverse rercovery behavior effects the opposite switching element.
The opposite switching element must take over the reverse recovery current.
Therefore, the switching losses are increasing mostly at the opposite
switching element
 Diode, dynamisch
Different reverse recovery behavior

Overvoltage due high (+) di/dt

 Diode, c
Simple circuit for measuring reverse recovery bahavior with simpyfied curves.

1
W off . I RRM . t rr . U Batt Q RR . U Batt
2
Parasitic inducatnces
 Diode, dynamic, example
z.B. IDB23E60:
600V/23A
Diode, dynamic
Diode, dynamc
Typ. capacitance vs. reverse
voltage