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E72873
MOSFET Features
IXYS reserves the right to change limits, test conditions and dimensions. 20080523a
Source-Drain Diode
Symbol Conditions Characteristic Values
(TVJ = 25C, unless otherwise specified)
min. typ. max.
IS VGS = 0 V A
VSD IF = 40 A; VGS = 0 V V
trr ns
QRM IF = 40 A; -diF/dt = 100 A/s; VR = 640 V C
IRM A
Component
Symbol Conditions Maximum Ratings
TVJ operating -55...+150 C
Tstg -55...+150 C
Md mounting torque 1.13 Nm
TO-247 Outline
IXYS reserves the right to change limits, test conditions and dimensions. 20080523a
I D - Amperes
30
100
25
4.5V 80
20
60
15
5V
40
10
5 4V 20
0 0
0 0.5 1 1.5 2 2.5 3 3.5 0 2 4 6 8 10 12 14 16 18
V D S - Volts V D S - Volts
35
I D - Amperes
4.5V
30 1.9
25 1.6 I D = 30A
20 I D = 15A
1.3
15 4V
1
10
5 0.7
0 0.4
0 1 2 3 4 5 6 7 -50 -25 0 25 50 75 100 125 150
V D S - Volts TJ - Degrees Centigrade
TJ = 125C 35
I D - Amperes
2.8
30
2.5
25
2.2
20
1.9
15
1.6
1.3 10
TJ = 25C
1 5
0.7 0
0 20 40 60 80 100 120 140 160 180 -50 -25 0 25 50 75 100 125 150
I D - Amperes TC - Degrees Centigrade
IXYS reserves the right to change limits, test conditions and dimensions. 20080523a
120 100
90
100
80
TJ = -40C
70
80 25C
I D - Amperes
g f s - Siemens
60 125C
60 50
40
40 TJ = 125C 30
25C
-40C 20
20
10
0 0
2 2.5 3 3.5 4 4.5 5 5.5 6 0 20 40 60 80 100 120
V G S - Volts I D - Amperes
70 7
I S - Amperes
VG S - Volts
60 6
50 5
40 TJ = 125C 4
30 3
TJ = 25C
20 2
10 1
0 0
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0 30 60 90 120 150 180 210 240 270
V S D - Volts Q G - nanoCoulombs
C iss
10000
Capacitance - pF
R (th) J C - (C/W)
1000 0.1
C oss
100
C rss
10 0.01
0 10 20 30 40 50 60 70 80 90 100 1 10 100 1000
V DS - Volts Pulse Width - milliseconds
IXYS reserves the right to change limits, test conditions and dimensions. 20080523a