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MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Device | or Eine Device Type | marking | equivalent | B.S. numbor* | Page | Type _| marking | BS/CECC number | Page esas | Lr | 2Nnsao | essaes Fora | 13 | wawes o Bs9302 Foo" | 15 ars36a | 12 | 2ns29 | Bsases F013 | 13. | BAWE3A D2 9302 Foz" | 15 8FS37 Ls) 2n260s | essa6s Fos | 13. | Baws D3 9902 Fos" | 15 wesz7A | 14 | 2nz604 | esazes F025 | 13 | BAWs4 Da Bs9302 Food" | 15 ersxa | cz | zre2 | essxes rors | 13 | BaWeS os | essa0z Fos: | 15 srszaa | ct | zt | ssase5 F015 | 13. | BAWeS 06 | ssswo2 Foo | 15 srsxo | cz | zrs3s | ssoaes F017} 13. | BAWS7 07 | sss302 F007 | 15 srs | cs | zrie2 | ssaesrozt| 13 | Bawes 08 9302 Fos | 15 srsaoa | ca | zrtao | sseaes F020 | 13 | Bzxeecav7 | wa 8 BFsa1 cs | zttes | sse36s F022 | 13 | szxee-c3vo | WS. 6 BFS42 pi | 2193 | ssoses ros} 13 | ezxse-cava | we 6 BFS43 p2 | zra0 | assgesror9 | 13 | ezxsecave | wr 6 srsas | 3 | zr210 | Bs9366 F023 | 13 | Bzxsecava | we 15 pesas | pa | zr | asses roza| 13 | Bzxescava | wo 5 srsas | Ht | 2nois | soaes Fos | 14 | Bzxeecav7 | zt 15 prsa6a | 42 | zTxs21 | Bsg36s Foss | 14 | BzxeBcevi | 22 5 BFTZ7 us | 2Nzaea 13 | azxseceve | 23 5 assez | ws | zrxs2 | sssxes F027 | 13 | Bzxeecev2 | 24 5 assse | 7 | ZTxsa 13 | szxesceve | 25 5 ssvas | s2 | 2nza6o | pssses Foa7] 14 | BzxBB-c7VS | 26 18 asvasa | st | 270s | essa6s ross | 14 | Bzxee-cev2 | 77 8 esvas | s3 | 2nzas | essves rosa | 14 | ezxee-covi | zB 8 esva7 | s4 | anzeoa | psoa6s F039 | 14 | B2x88-C10 z 6 Bzx88-C11 vt 6 BZX88-C12 2 16 BZX88-C13 ¥3 15 BZXBE-CIS Y4 8 B2x88-C16 Ys 15 B2X8B-C18 Y6 6 B2x88-C20 vr 5 BZX88-C22 ys 6 B2xe8-C24 ¥8 15 B2X88-C27 xt 58 BZx88-C30 x2 16 8ZX88-C33 x3 15 BZX88-C36 xa 5 BZX88-C39 xs, 5 BZX88-C43 x6 5 ‘BZX88-C47 eo 15 “Category P. HI4 NPN LOW LEVEL coninues Max Veetsat hee Min fr Max at at} at Prot Type | Ves | Vceo | Ic r [at Tome |Package|Comple-| Tc | te, |Min.|Max.| Ic ic | =258C ment v | vo {mal v |ma|ma ma |MH2| ma | mw 2na053 | 60 | 40 | 700]1.4 | 150] 15 | 60] 250] 150] 100 | 50 | 1000 | To-39 |2na037’ 2ness | 60 | 40 | 00|1.5 | 150] 15 | 20| 60} 150] 90] 50 | 600 | To-39 | 2n1131 2nes7 | 60 | 40 | 500|1.5 | 150| 15 | 40] 120] 150] 100] 50 | 600 | To-39 |an1132: srys1 | 60 | 30 |1000/0.36| 160] 15 | 40] — | 150] 50] 50 | 00 | To-29) - scio7 | 60 | 45 | 200]0.2 | 10 ]0.6 | 120| 460) 2| 150] 10 | 300 | To.18 |Bc177 scys9 | 45 | 45 | 200/0.95| 10 |0.25] 120| 630) 2] 125 | 10 | 1000" | To-18 |Bcy79 angza | 45 | 45 | 30) 1 | 10/05 | 40] 120J0.01] — | — | 300 | to-1e} — 2nes0 | 45 | 45 | 30| 1 | 1005 | 100] 300/001] — | — | 300 | Tote} — zrat_ | 45 | 35 | soojo.2} 10] 2 | 38] 162] 10] 200] 10 | 300 | To-18 |zr181 zrez_ | 45 | 35 | 500/0.2| 10] 2 | 75| 250] 10| 200] 10 | 300 | To-18 | zT182 prxes | 40 | 36 |1000/0.35] 160] 15 | 70| — | 150] 50| 50 | 800 | To-29) — ecya2 | 40 | 25 | 200/025] 10] 1 | 40} 90] 1] 100} 1 | 300 | To-18) — scy4s | 40 | 20 | 200/025] 10| 1 | 75] 150] 1/100) 1| 300 | To-18| — Brys2 | 40 | 20 |1000/0.35] 150 15 | 60] — | 150] 50| 50 | 800 | To-39) — cys | 32 | 32 | 200}0.35] 10 }o.25] 120] 630 125 | 10 | 1000" | To-18 |Bcy78 cis | 30 | 20 | 200/0.2 | 10 |0.5 | 120 800 150] 10 | 300 | T0-18 | Bc178 zreo | 25 | 25 | soojo.2| 10} 2 | 38] 162) 10| 200] 10 | 300 | To-18 | zT180 zre7_| 25 | 25 | soojo.2| 10] 2 | 75) 250| 10| 200] 10 | 300 | To-18 | zT187 2n7oea| 25 | 20 | — [06] 10] 1 | 20] 60} 10/200] 10 | 300 | to-18) — 2n706 | 25 - jos | 10) 1 | 20 10| 200] 10 | 300 | To-18] - BSY95A) 20 200}0.35| 10 |0.2 | 50| 200] 10| 200] 10 | 300 | To18] — AL tease = 45°C T0-18 0-39 mc3 PNP LOW LEVEL TABLE 2 — PNP SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military equipments. These transistors are particularly suitable for use as Audio Frequency Amplifiers, Driver and Output Stages, Oscillators and General Purpose Switches. The devices are listed in order of decreasing Breakdown Voltages (Vog and Veo), decreasing Collector Currents (Ic), Power Dissipation (Pia), etc. At Teas = 45°C | Max Ve Dee Min fr Max at at at Type | Vea! Veeo| te |Package Comple- Ic Ig. | Min.|Max.| Ic Ig ment v v mA} V [mA {mA mA | MHz | mA z7211 90 65 | 1000]}0.65| 150) 15} 40] 120 |150| 60 | 50 TO-39 2naoa6 | 90 | 68 | 1000/0.65| 160| 15] 40| 140 {150| — | — 70-39 ‘27189 70 70 500) 0.2, 50] 5] 75] 250 | 10/150 | 10 TO-18 acer | 60| 60 | 1000|1.0 |1000] 100} 40] 250 | 100] 50 | 50 70-39 scy77 | 60] 60 | 100/0.25| 10]0.25| 120] 460 | 2} 1807 | 10 70-18 2nze05} 00} 45 } 30/05 | 10J0.5 | 150) — jos] 30 [os | 400 | To-46 2nz604| 60 | 45 | 30/05 | tol05 | 60] — 0.5] 30 |0.5| 400 | To4 zr210 | 60| 40 | 1000|1.4 | 150| 15 | 20] 100 | 150] 60 | 50 | 1000 | To-39 2N4037 | 60 40 | 1000}1.4 | 150] 15 | 50] 250/150} — | — | 1000 / TO-39 sci77 | 50| 45 | 200/02 | 10/08 | 120] 460 | 2|130 | 10 | 300 | to-18 BCY70 | 50 40 2000.25] 10 1| 100) — 10} 250 | 10 350 | TO-18 2N1131 | 50 3 600/1.5 | 150} 15] 20) 45/150) — | — 600 | TO-39 2n1132| 50| 35 | 600]1.5 | 150] 15! 30] 90] 150] — | — | 600 | To.39 cs 45 500|0.4 50} 5| 38) 85 | 10) 150 | 10 300 | TO-18 45 45 500] 0.4 50} 5} 75| 170 | 10) 180 | 10 300 | TO-18 46} 45 | 200/0.25| 10/0.25] 120] 460 | 2| 1807 | 10 | 1000" | To-18 4s | 45 | 2000.25] 10} 1| 100) 400 | 10/250 | 10 | 350 | To-18 45| 36 | soojo2| 10/ 1) 38] 162] 10/150 | 10) 300 | To-18 45 35 500) 0.2 10) 1] 75| 260 | 10) 150 | 10 300 | TO-18 40 40 | 1000]1.0 |1000] 100] 40} 250 | 100) 60 | 50 | 3700* | TO-39 32 32 200) 0.25] 10/0.25) 120} 630 2) 180f | 10 | 1000* | TO-18 30| 25 | 200/0.25| 10] 1] 100] — | 10/280 | 10 | 360 | To-18 30| 25 | 200/02] 10]0.5 | 120] 800] 2} 130 | 10) 300 | To-18 25 2B 5000.2 10) 1/|. 38} 162 | 10/150 | 10 300 | TO-18 2 2B 500] 0.2 10) 1] 75} 250 | 10] 150 | 10 300 | TO-18 20} 20 | soofo.2 | 10} 1} 50) 200| 10] ~ | ~ | 300 | ro1w Typical Mca NPN SWITCHING TABLE 3 — NPN SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage (Vceo}, decreasing Collector Current (lc), Power Dissipation (Pio), etc. Max Veetcay |Switching Times| at (Max) at Package & 3 le | te tort | Io < ton Vv |ma |ma\ ns [ns |ma 40 8 10.6 1000} 100 1750 |1000} To-39 0.2 | 50} 85 50° 20| TO-18 0.2 | 50) 20] TO-18 0.2 | 50) 20] TO-18 los | 50} note 1) 70-39 150 150] TO-39 150 0-39 10 T0-18 150 0-39 150 70-39 50| TO-18 50| TO-18 10 TO-18 150 0-39 150 0-39 150 To-18 150 To-18 150] 0-39 150| 70-39 10] To-18 10 To-18 160]7.! 10-39 10 10-18 2786 788 z789 2N2102 BEXE5 BFXe4 BCYE5E 2N1613 2N2270 z7e3 zTe4 &SsssRagasses aaa z1e2 2N3512 BCYs8 BRBRRRESES ‘Typical. Note 1 ta. =30ns Continued — mcs PNP SWITCHING TABLE 4 — SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS ‘The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage (Vceo}, decreasing Collector Current (lc), Power Dissipation (Prox), etc. Type —Vceo| Ie -ackage| Comple- vfrna |v [end | ta [Mi] MO at fis] 8 | | oa 27189 70 | 500]0.2 | 50} 5 | 75] 250] 10/150 | 10 |120°}250*} 20] TO-18 | ZT89 2N4036 | 65 |1000/0.65| 150] 15 | 40] 140 | 150] — | — |110 |700 | 150| TO-39 | 2N2102 2N2904A| 60 | 600/0.4 | 150] 15 | 40] 120 |150/200 | 50 | 45 /100 | 150] TO-39 | 2N22184 2N2905A| 60 | 600/0.4 | 150] 16 | 100] 300 | 150/200 | 50 | 45 |100 | 150| TO-39 | 2N22194 22906) 60 | 600|0.4 | 150] 15 | 40] 120 |150|200 | 50 | 45 }100 | 150] To-18 | 2nz2218 2N2907A| 60 | 600/0.4 | 150] 15 | 100) 300 | 150/200 | 50 | 45 | 100 | 150| TO-18 | 2N2222A BCY77 60 {| 100/0.25) 100.25] 120] 460 2] 180"| 10 |150 /800 | 10/ TO-18 | BCY65E 27183 | 45 | soojo.4 | 50] 5] 38] 85] 10/150 | 10 |120*|250"| 20| To-18 | zT83 zrisa_ | 45 | soo|o.4 | 50] 5} 75) 170] 10]150 | 10 |120*/250*| 20] to-18 | zre4 BCY79 | 45 } 2000.25) 10)0.25) 120] 460 2) 180*| 10 }150 }800 |} 10) TO-18 ) BCYS9 2N2904 | 40 | 600/0.4 | 150] 15 | 40) 120 | 150] 200 | 50 | 45 | 100 | 150| TO-39 | 2N2218 22905 | 40 | 600|0.4 | 150} 15 | 100] 300 | 150]200 | 50 | 45 |100 | 150] To-39 | 2n2219, 2N2906 | 40 | 600/0.4 | 150] 15 | 40] 120 | 150/200 | 50| 45 |100 | 150| TO-18 | 2N2221 2N2907 | 40 | 600/0.4 | 150] 15 | 100} 300 | 150/200 | 50 | 45 {100 | 150| TO-18 | 2N2222 zris1_ | 35 | soojo.2 | 10} 1} 38] 162) 10]150 | 10 |120*]250"| 20 | to-18 | zre1 27182 35 | 500/0.2 | 10) 1) 75} 260 2782 BCY78 | 32 | 200 27180 25 | 500] zr187_ | 25 | sooo. 2Nn2894 | 12 | 200 “Typical mc7 NPN LOW NOISE TABLE 5 — NPN SILICON PLANAR LOW NOISE TRANSISTORS The transistors shown in this table are characterised for low noise, low level amplification and are particularly suitable for audio pre-ampli 1's as well as universal applications. The devices are listed in order of decreasing Breakdown Voltage (Vceo), decreasing Collector Current (Ic), Power Dissipation (Pi), etc. mcs Max Veetsat) | Ie | tg |Min.|Max.| Ic Ie | N [te] £ ment v_[ma| v_ [ma] ma mA|MHz|mA | dB | uA | Hz Z791—_| 100 }1000|1.2 | 200} 20 | 40} 120 60| 50 | 6 | 300 | 1K | TO-39 | ~ 2792 | 100|1000]1.2 |200| 20 | 65] 200} 200} 60] 50 300 | 1k | To-39 | — Z798 80}1000/0.5 | 150] 15 | 40] 120/160) 60/60 | 6 | 300] 1k |To-29 | — z786 80| 500}0.2 | 50] 5 | 38] 85] 10] 200] 10 | <6 | 100 | 1K | To-18 | — z788 80| 500/02 | 50] 5| 75] 170] 10] 200] 10 | <6 | 100 | 1K | To-18 | — 789 70| sooj0.2 | 50| 5| 75] 250] 10] 200] 10 | <6 | 100 | 1K | To-18 | zTte9 z790 | 60|1000}0.7 | 200] 20 200 | 200] 60 50 300 | 1K | 70-39 | zT217 2795 | 60|1000/1.2 | 200] 20 200 | 350] 60 | 50 300 | 1K | To-39 | zr211 BCY65E | 60] 100/0.35) 10/0.25] 120] 460] 2/ 125] 10 | <6 | 200 | 1K | 70-18 | BCY77 2n2484 | 60| 50]0.35| 1]0.1 | 100] 500 Jo.o1] — | — | <3 | 200 | 1k | Tow | — z794 | 45|1000}0.7 | 200] 20} 20] — | 10] 60] 80 | 6 | 300] 1K | To-39 | zr2t0 7783 45| soojo.2 | 50| 5| 38] @5| 10] 200] 10 | <6 | 100 | 1k | To-18 | zries zre4 | 45] 500]0.2 | 50] 5| 75] 170) 10] 200] 10 | <6 | 100 | 1K | TO-18 | zrte4 Bcys9 | 45] 200/0.35] 10]0.25) 120] 630} 2] 125| 10 | <6 | 200 | 1k | To-18 | Bcy79 2ng2a | 45] 30] 1 | 10/05 | 40] 1200.01) — | - |

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