CONFIDENTIAL

Faculty of

UTM
UNIVERSITI TEKNOLOGI MAUYSIA
E le c tric a l
E n g in e e rin g

FINAL EXAMINATION SEMESTER II

SESSION 2013/2014

COURSE CODE SKEU 2012

COURSE NAME ELECTRONICS

LECTURERS DR. AB AL-HADI BIN AB RAHMAN

DR. FAUZAN KHAIRI BIN CHE HARUN
DR. MOHAMED SULTAN BIN MOHAMED ALI
DR. SHAHARIN FADZLI BIN ABD. RAHMAN
DR. SUHANA BINTI MOHAMED SULTAN
DR. ZAHARAH BINTI JOHARI
MS. NORHAFIZAH BINTI RAMLI

PROGRAMMES SKMI / SKMM / SKMO / SKMP / SKMV / SKMT

SECTIONS 01 / 02 / 03 / 04 / 05 / 06 / 07 / 08

TIME 2 HOURS

DATE 06 JUNE 2014

INSTRUCTION TO CANDIDATE PART A : ANSWER ALL QUESTIONS.

PART B : ANSWER THREE (3) QUESTIONS

ONLY.

NOTE : LIST OF EQUATION IS PROVIDED IN

APPENDIX 1

THIS EXAMINATION BOOKLET CONSISTS OF 14 PAGES INCLUDING THE FRONT COVER

 -2 -
SKEU2012

PART A : ANSW ER ALL (14) QUESTIONS [25 MARKSJ

NOTE: You may rewrite your answer in your answer book or attach page 2 and page 3 o f
the question papers inside your answer book.

1. When sufficient energy is added to a valence electron, it will jum p from

band to the band.

2. At room temperature, the number o f in N-type semiconductor is more than

the number o f

3. The output voltage, Vo for the circuit in Figure A1 is

100 Q

4. For the circuit in Figure A2, when the value o f R b increases, Ic

O^CC

Rb Rc

Figure A2

5. In the active region o f a common-emitter amplifier, the base-emitter junction is

biased and the base-collector junction i s __________ biased.
 -3 -
SKEU 2012

6. In a P-type semiconductor, electrons are the carriers and holes are the
carriers.

7 ABJTisa controlled device and FET is a controlled device.

8. List three characteristics o f an ideal op-amp

i.
ii.
iii.

9. Name one (1) basic op-amp circuit for a linear application and one (1) basic op-amp
circuit for a non-linear application.
Linear application:_______________________________________
Non-linear application:___________________________________

10. The N-channel E-MOSFET operates in the cut-off region when Vos i s ____ than
V g s (th ), and the saturation region when V gs i s ______ than V g s (th ) and V ds is
than V g s - V g s (th ).

11. Reversed biased ideal diode is equivalent to a / a n ___ circuit, whereas forward
biased ideal diode is equivalent to a/an ________ circuit.

12. Silicon, germanium, and carbon have valence electrons.

13. The 555 timer is typically used to design a/an

14. A rectifier usually has a capacitor connected in parallel to the load resistor to
the rectified output voltage.
 -4 -
SKEU2012

PARTB: ANSWER THREE (3) QUESTIONS ONLY.

Qi
(a) A simple voltage reference circuit that is used to drive two series loads Ri and R 2
in a control circuit is shown in Figure Q l(a). The reverse characteristic o f the
diode used in the circuit is depicted in Figure Q l(b), and R 2 = 50 Q, Assume that
R] = 3 R 2 and let the maximum power dissipated in the diode be denoted as Pzm
The supply voltage, Vg vary between 4.5 and 5.6 V, For regulation to remain
effective, find;
(i) Maximum value o f the resistor, R,
(ii) Maximum power dissipation, P zm
(10 marks)

Load

Vs -

(a) (b)

Figure Q l
 -5 -
SKEU 2012

(b) Referring to full-wave bridge rectifier circuit in Figure Q l(c), all diodes are silicon
with V f = 0 .7 V.
(i) Draw and label the output (vo) waveform.
(ii) Calculate the Vo(ave).
(7 marks)

240V,
50Hz

Figure Q l(c)

(c) Figure Q l(d) is a DC power supply using a zener voltage regulator circuit that
provides a regulated dc output o f 7.5 V to a load resistance (R l) varying fi-om
120 Q to 450 2 with an average unregulated input voltage (Vj(ave)) o f 30V.
(i) Draw the internal circuit o f the voltage regulator using suitable zener diode
and source limiting resistor, Rs.
(ii) Determine the proper value o f Rs and the maximum current (Izmax) through
zener diode.

(8 marks)

D, D2

D3 D4
------ ------- M
Rl =
120Q - 4 5 0 0

Figure Ql(d)
 -6 -
SKEU2012

Q.2
(a) Refer to Figure Q2(a). The biasing point Q is at Ic;Q=5mA. Given that p = 350,
V.T = 26mV, and = oo;
(i) Draw the AC small signal equivalent circuit o f the amplifier.
(ii) Calculate g, and r^ o f the transistor.
(iii) Calculate the input impedance, Z;..
(iv) Calculate the output impedance, Zk>

(v) Calculate the voltage gain. Ay = .

Vi
(vi) Given the input voltage, v, = 0.01sin(1007rt) (V), draw and label the output
voltage Vq.

(J7 marks)

V,o
 -7 -
SKEU 2012

(b)
(i) For the fixed-bias circuit given in Figure Q2(b), determine the values for
Vcc, the resistor Ri, and the resistor R 2 , if we require Rj = 8 OR2 ,

Icq 12mA, V ceq ~ 8V and V be 0.7 V with p = 50.

(ii) Is the BJT in active, saturation, or cut-off mode? Justify your answers.
(iii) What is the disadvantage o f the circuit in Figure Q2(b) compared to the
voltage-divider-bias circuit in part (a)?
(8 marks)

Figure Q2(b)
 - 8-
SKEU2012

Q3
(a) The amplifier circuit in Figure Q3(a) has the following parameters: Id ss = 10 mA,
Vos(oii) = |Vp| = -3 .5 V
(i) Using the transfer characteristic curve in Figure Q3(b), graphically
determine the transistor operating points (Id q and V g sq )-

(ii) Calculate the amplifiers transconductance, gm .

(iii) Draw the small signal equivalent circuit.

(iv) Determine the amplifiers input impedance, Z\ and output impedance, Zo.
(v) Determine the amplifier voltage gain, Ay.
(vi) Explain how Ay is affected if Cs is removed from the above circuit. Justify
your answer with calculations.
(17 marks)
(b) I f Id q is changed to 1 .4 mA
(i) Determine the new Rs (all other circuit component remain).
(ii) Calculate the amplifiers new transconductance, gm .

(iii) Determine the amplifiers new voltage gain. Ay.

(8 marks)

+
Va

Figure Q3(a)
 -9 -
SKEU2012

Figure Q3(b)

NOTE: Use this Figure Q3(b) for Question 3(a) part (i) and s'uhmit this graph along with
your answer book.
 - 10-
SKEU2012

Q.4
(a) Refer to Figure Q4(a).
(i) Show that Vo = - R f (V,/R, + V 2/R 2 ).
(ii) Given that Ri = 25 kQ, R 2 = 40 kQ and Rf = 100 kQ, sketch Vo when
V, = 0.5 sin (ot (V) and V 2 = 3V.
(8 marks)

Rf

-o V

(b) Refer to Figure Q4(b).

(i) Draw the signal waveforms at v ,, Voi and when V/= 10 sin cot (mV).
(ii) Suggest and draw a single op-amp circuit that can replace the function o f the
circuit in Figure Q4(b).
(9 marks)

lOkQ 30kQ

Figure Q4(b)
 -1 1 -
SKEU 2012

(c) In Figure Q4(c), the operational amplifier has infinite open-loop gain, infinite input
impedance and negligible output impedance. What is the suitable range value for
Rx to obtain the total amplifier gain, |Av| in dB of 26 dB to 40 dB?
(8 marks)

-oV out

Figure Q4( g)
 - 12-
SKEU2012

Q5
(a) For the Schmitt Trigger circuit in Figure Q5(a);
(i) Determine the upper and lower threshold voltage, V tn rp and V ltp .

(ii) Draw the expected output signal, v q u t-

(7 marks)

VlN (V)
+9V

Figure Q5(a)

(b) Figure Q5(b) is an LED Driver application using three-level comparator.

(i) Calculate V re fi and V r e f 2-

(ii) Analyze the comparator circuit by filling-up the status (ON or OFF) for each
o f the LED (LED l, LED2, and LED3) in Table Q5 for the three different
levels o f input voltage, Vm-
(10 marks)

Table Q5

ViN LEDl LED2 LEDS

0.5V

1.5 V

2.5V ON
 - 13 -
SKEU 2012

+ 12V +12V

Figure Q5(b)
(c) Figure Q5(c) is a 555 timer circuit to generate a free running clock at frequency,
fo ~ Hz and duty cycle, D = 60%. Determine the suitable values for resistances
Ra and R b to achieve the desired clock specification? Use Capacitor Cj = 22 }jF.

(8 marks)

+9 V

: 8
RESET Vcc

OUT
DISCH ""V o
555
TIMER J lT U l
Rb
_6
THRESH
2 TRIG CONT

GND ^ C2
1 0 .0 1 nF

Figure Q5(c)
 - 14-
SKEU 2012

APPENDIX 1 - LIST OF EQUATIONS

PIV = 2Vp(ou + 0.7V P= 1 -a

h = Ic + h

Vavg = Vdc = -^ /c - / + Ic B O

t = R C ln l t = RCln3

Vd c 2yf3fRiC

r= _f}VT
Vdc 4Vs/fitC
rn = Icq

y VpT Vp

r = -^
9m AVgs

'D(on)
(ycs(on)-VcsiTH)^) Id K(ycs ^GS(rW))

- 2 lpss
I^GS(OFF,l g, - 2 K ( V - Vc,S(TH))