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MATHEMATICAL MODELLINGOF A PHOTO-VOLTAIC (PV) ARRAY

PV arrays can be widely used in a direct current (DC)microgrid system due to their
inherent advantage for DC loads in commercial, industrial and residential applications. When
compared to traditional AC distribution, DC microgrids are considerably highly energy
efficient when implemented with distributed generation. Distributed generation from PV
modules, fuel cells, wind turbines or micro turbines, is more efficient when the power is
transferred by DC. In AC distribution, there is an enormous wasteful energy conversion from
alternating current to direct current and vice versa. Hence, instead of increasing conversion
efficiency, the conversion processes are avoided, and utilized a (DC) distribution because of
the increasing DC loads in a technologically advanced society. The array characteristics
depends on several environmental parameters, mainly temperature and solar insolation and
also varying diode model parameters, series and shunt resistance.

MODELLINGOF THE PV CELL AND ARRAY

The basic tool for real time simulation is modelling. For modelling, it is important to
examine the effect of various factors on the PV cells. The manufacturers of PV devices
provide a set of observed data that can be used to find the mathematical equation of the
device (Current-Voltage) I-V curve. Some manufacturers also provide IV curves acquired
experimentally under different operating conditions.The mathematical models for PV cells
are based on the theoretical equations that define the operation of PV cells and is developed
using the equivalent circuit of the photovoltaic cells. The basic theory for the modelling of
the PV cell and array is derived from the theory of semiconductors that mathematically
defines the IV characteristic of the ideal PV cell.
There are several parametric models of PV cell presented in literature like single-
diode model, two diode model and three diode models. Of the numerous models available,
most frequently used one is single diode model. Villalva et al has proposed a closed solution
for nding the parameters of the single-diode model equation of a practical PV array.
The equivalent circuit of the PV cell based on the single diode model is as shown in
Figure 1. The solar cell is a current source in parallel with a diode. The output of the current
source is directly proportional to the light falling on the cell (photocurrent). During darkness,
the solar cell works as a p-n junction diode. It neither produces a voltage or a current. For
simulating the entire PV array, the model of the PV cell is developed first. For the single
diode equivalent circuit, from the basic theory of semiconductors. The output current of PV
cell is given in 1.

Fig. 1. Equivalent circuit of a solar cell

(1)
The average current through the diode is governed by the Shockley diode equation (2)

Modelling of Photovoltaic Array Vijayalekshmy S/MITS-Ernakulam

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( ) (2)
Where I0 is the cell reverse saturation current at ambient temperature which in turn depend on
cells reverse saturation current at reference temperature IRS given by (3)
( )
[ ]

( ) (3)
Substituting (2) in (1),
( ) (4)
The light-generated current of the PV cell depends linearly on the solar irradiation. It
is a function of short circuit current under any environmental condition and it is also depends
on the temperature according to the equation (5),
( )( ) (5)

where (6)

From figure (1), the terminal voltage of the solar cell is,

(7)
Thus equation (1) can be represented as
( )
( )
( ) (8)

Definite numbers of such solar cells are connected in series and parallel to constitute a
PV array. The generated current in a PV array as per the circuit shown in Figure 2 is (9).

Fig. 2. Equivalent circuit of a solar array

( )
( )
* ( )+ (9)

The open circuit voltage VOC and short circuit current ISC are the two important
parameters used which describes the cell electrical performance. The above mentioned

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equations are explicit and non linear, hence it is not easy to arrive at an analytical solution for
the specific temperature and irradiance. Normally Iph >> I0. So by neglecting the small diode
and ground leakage currents under zero terminal voltage, the short-circuit current is
approximately equal to the photocurrent. i.e.

Iph = ISC (10)

The open circuit voltage is obtained by assuming zero output current as in (11).

( )
( )
* ( )+ (11)

With the given open circuit voltage at reference temperature and ignoring the shunt leakage
current, the reverse saturation current at reference temperature is got from (11) is shown in
(12)

(12)
( )

Here, is the Nominal Operating cell Temperature (NOT) given by the manufacturer.
NOT is defined for a specific irradiance of 800W/m2 , ambient temperature 200C, wind speed
is less than 1 m/s for free air access to the rear side of the module. The series and shunt
resistance of the array are obtained from the open circuit voltage, short circuit current and
MPP in the electrical characteristics of PV module. Villalva et al. has proposed a method to
obtain the series and shunt resistance. Accordingly, there is only one pair of values of
and for which MPP of the module matches with the given MPP of a specific module
under standard test conditions. This is obtained as follows
(13)
Thus from (3.6),
( )
( )
( ) (14)
Accordingly,
( )
( )
[ ( ) ](15)

The shunt resistance , can be obtained from equation (14) as a function of series
resistance as follows

[ ( ) ] (16)
( )

The optimal value at is solved iteratively by using a typical series resistance

of the PV module as a starting point and finding the pair of and at which the power
at ST conditions is maximum is found out. This is approximately equal to the values given by
the manufacturer of PV module which is considered for investigation. By using the above
method the typical value of and for the module is 1008 ohms and 0.3 ohms

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respectively. The various parameters of the photovoltaic panel used for simulation is as
shown in Table 1. The number of solar cells connected in series and parallel are selected such
that the nominal voltage of the array is approximately equal to 360 V.

TABLE 1

Design specificationsof the photovoltaic array at NOT

Symbol Value Symbol Value

Voc 500V 1.1 eV
-19
q 1.602 10 C Np 40
A 1.5 Ns 900
-23
K 1.38 10 J/K G 0-1000W/m2
Rs 0.01 T 340K
Rsh 1008.12 Ki 0.00065
Isc 3.27 A Tref 301.18K

List of Symbols
SYMBOL DESCRIPTION
PV cell photocurrent, proportional to temperature and irradiance of the PV cell
Average current through the diode
Reverse saturation current of the diode
Reverse saturation current of the diode at reference temperature
Output Current of the PV cell
Output current of the PV array
Short circuit current of the diode
ST Standard test conditions: Irradiance 1000W/m2, cell junction temperature 250 C,
and reference air mass 1.5 solar spectral irradiance distribution
Short circuit current under ST
PV module Photo current under ST
PV module reverse saturation current under ST
MPP Maximum power point
Module current at MPP and under ST
Average voltage across the diode
Output voltage of the PV cell
Output voltage of the PV array

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Open circuit voltage of the PV cell under ST

Module voltage at MPP and at ST
Power of the PV module at MPP and at ST
Intrinsic series resistance of the solar cell
Equivalent shunt resistance of the solar cell
Charge of an Electron: 1.6 *
A Ideality factor of the diode: 1.5
K Boltzmann constant: 1.38 * 10-23 J/K
T Surface temperature of the PV module
Temperature coefficient of SC current
Temperature- rise coefficient
NOT Nominal operating cell temperature as given by the manufacturer
Irradiance reaching the surface of the module
Irradiance reaching the surface of the module at ST
Number of cells connected in series in a PV array
Number of cells connected in parallel in a PV array
EG Energy band gap of silicon

Modelling of Photovoltaic Array Vijayalekshmy S/MITS-Ernakulam