X02xxxA

SENSITIVE GATE SCR

FEATURES
IT(RMS) = 1.25A
VDRM = 200V to 800V
Low IGT < 200 A

G A

DESCRIPTION
The X02xxxA series of SCRs uses a high
performance TOP GLASS PNPN technology. TO92
These parts are intended for general purpose (Plastic)
applications where low gate sensitivity is required.

ABSOLUTE RATINGS (limiting values)

Symbol Parameter Value Unit

IT(RMS) RMS on-state current Tl= 60C 1.25 A
(180 conduction angle)

IT(AV) Mean on-state current Tl= 60C 0.8 A

(180 conduction angle)

ITSM Non repetitive surge peak on-state current tp = 8.3 ms 25 A

(Tj initial = 25C )
tp = 10 ms 22.5

I2t I2t Value for fusing tp = 10 ms 2.5 A2s

dI/dt Critical rate of rise of on-state current 30 A/s

IG = 10 mA diG /dt = 0.1 A/s.

Tstg Storage and operating junction temperature range - 40, + 150 C

Tj - 40, + 125

Tl Maximum lead temperature for soldering during 10s at 260 C

2mm from case

Voltage
Symbol Parameter Unit
B D M N
VDRM Repetitive peak off-state voltage 200 400 600 800 V
VRRM Tj = 125C RGK = 1K

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X02xxxA
THERMAL RESISTANCES

Symbol Parameter Value Unit

Rth(j-a) Junction to ambient 150 C/W

Rth(j-l) Junction to leads for DC 60 C/W

GATE CHARACTERISTICS (maximum values)

PG (AV)= 0.2 W PGM = 3 W (tp = 20 s) IGM = 1.2 A (tp = 20 s)

ELECTRICAL CHARACTERISTICS

Sensitivity
Symbol Test Conditions Unit
02 03 05
IGT VD=12V (DC) RL=140 Tj= 25C MIN 20 20 A

MAX 200 200 50

VGT VD=12V (DC) RL=140 Tj= 25C MAX 0.8 V

VGD VD=VDRM RL=3.3k Tj= 125C MIN 0.1 V

RGK = 1 K

VRGM IRG =10A Tj= 25C MIN 8 V

tgd VD=VDRM ITM= 3 x IT(AV) Tj= 25C TYP 0.5 s
dIG/dt = 0.1A/s IG = 10mA
IH IT= 50mA RGK = 1 K Tj= 25C MAX 5 mA

IL IG=1mA RGK = 1 K Tj= 25C MAX 6 mA

VTM ITM= 2.5A tp= 380s Tj= 25C MAX 1.45 V

IDRM VD = VDRM RGK = 1 K Tj= 25C MAX 5 A
IRRM VR = VRRM
Tj= 110C MAX 200 A

dV/dt VD=67%VDRM RGK = 1 K Tj= 110C TYP 15 20 15 V/s

tq ITM= 3 x IT(AV) VR =35V Tj= 110C MAX 100 s

dI/dt=10A/s tp=100s
dV/dt=2V/s
VD= 67%VDRM RGK = 1 K

ORDERING INFORMATION

X 02 03 M A
SCR TOP GLASS PACKAGE :
A = TO92
CURRENT SENSITIVITY VOLTAGE

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 X02xxxA

Fig.1 : Maximum average power dissipation ver- Fig.2 : Correlation between maximum average
sus average on-state current. power dissipation and maximum allowable tem-
perature (Tamb and Tlead).

P (W) P (W) Tlead (oC)

1.2 1.2 -50
O

360 Rth(j-l)
1.0 1.0
DC
-70
0.8 = 180
o 0.8 Rth(j-a)
o
= 120
0.6 0.6 -90
o
= 90
0.4 o
0.4
= 60
-110
0.2 0.2
= 30 o I T(AV)(A) o
Tamb ( C)
0.0 0.0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 20 40 60 80 100 120 140

Fig.3 : Average on-state current versus lead tem- Fig.4 : Relative variation of thermal impedance
perature. junction to ambient versus pulse duration.

I T(AV) (A) Zth(j-a)/Rth(j-a)

1.4 1.00

DC
1.2

1.0

0.8
o 0.10
= 180
0.6

0.4

0.2 o
Tlead ( C) tp (s)
0.0 0.01
0 10 20 30 40 50 60 70 80 90 100 110 120 130 1E-3 1E-2 1E-1 1 E+0 1 E+1 1E +2 5 E+2

Fig.5 : Relative variation of gate trigger current and Fig.6 : Non repetitive surge peak on-state current
holding current versus junction temperature. versus number of cycles.

Igt[Tj] Ih[Tj] ITSM(A)

o o
Igt[Tj=25 C] Ih[Tj=25 C] 25
10.0 o
Tj initial = 25 C
9.0
20
8.0
7.0
6.0 15
Igt
5.0
4.0 10
3.0
2.0 Ih 5
1.0 Number of cycles
Tj(oC)
0.0 0
-40 -20 0 20 40 60 80 100 120 140 1 10 100 100 0

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X02xxxA

Fig.7 : Non repetitive surge peak on-state current Fig.8 : On-state characteristics (maximum values).
for a sinusoidal pulse with width : tp 10ms, and
corresponding value of I2t.

I TSM (A). I2 t (A 2 s) I TM (A)

100 100
Tj initial = 25oC
Tj initial
o
25 C
I TSM
10

10 Tj max

1 Tj max
I2 t Vto =1.05V
Rt =0.150

tp(ms) VTM (V)

1 0.1
1 10 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5

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 X02xxxA
PACKAGE MECHANICAL DATA
TO92 (Plastic)
DIMENSIONS
REF. Millimeters Inches
A Typ. Min. Max. Typ. Min. Max.
a A 1.35 0.053
B C B 4.7 0.185
C 2.54 0.100
D 4.4 4.8 0.173 0.189
F D E
E 12.7 0.500
F 3.7 0.146
a 0.45 0.017

Marking : Type number

Weight : 0.2 g

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THO MSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.

1995 SGS-THOMSON Microelectronics - All rights reserved.

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