ON Semiconductor

NPN
Complementary Silicon Power TIP3055
PNP
Transistors TIP2955
. . . designed for generalpurpose switching and amplifier
applications.
DC Current Gain
15 AMPERE
hFE = 20

70 @ IC POWER TRANSISTORS
= 4.0 Adc COMPLEMENTARY
CollectorEmitter Saturation Voltage SILICON
VCE(sat) = 1.1 Vdc (Max) @ IC 60 VOLTS
= 4.0 Adc 90 WATTS
Excellent Safe Operating Area

MAXIMUM RATINGS

Rating Symbol Value Unit

CollectorEmitter Voltage VCEO 60 Vdc

CollectorEmitter Voltage VCER 70 Vdc

CollectorBase Voltage VCB 100 Vdc

EmitterBase Voltage VEB 7.0 Vdc

Collector Current Continuous IC 15 Adc

Base Current IB 7.0 Adc
CASE 340D02

Total Power Dissipation @ TC = 25
C PD 90 Watts
Derate above 25
C 0.72 W/
C

Operating and Storage Junction

Temperature Range
TJ, Tstg
65 to +
150
C

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case
Symbol
RJC
Max
1.39
Unit

C/W

Thermal Resistance, Junction to Ambient RJA 35.7
C/W

1000

VCE = 4.0 V
hFE , DC CURRENT GAIN

TJ = 25C

100 TIP3055
TIP2955

10
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)

Figure 1. DC Current Gain

Semiconductor Components Industries, LLC, 2002 1 Publication Order Number:

January, 2002 Rev. 5 TIP3055/D
 TIP3055 TIP2955

ELECTRICAL CHARACTERISTICS (TC = 25
C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

CollectorEmitter Sustaining Voltage (1) VCEO(sus) 60 Vdc

(IC = 30 mAdc, IB = 0)

Collector Cutoff Current ICER 1.0 mAdc

(VCE = 70 Vdc, RBE = 100 Ohms)

Collector Cutoff Current ICEO 0.7 mAdc
(VCE = 30 Vdc, IB = 0)

Collector Cutoff Current

(VCE = 100 Vdc, VBE(off) = 1.5 Vdc)
ICEV 5.0 mAdc

Emitter Cutoff Current IEBO 5.0 mAdc

(VBE = 7.0 Vdc, IC = 0)

ON CHARACTERISTICS (1)

DC Current Gain hFE
(IC = 4.0 Adc, VCE = 4.0 Vdc) 20 70

(IC = 10 Adc, VCE = 4.0 Vdc) 5.0

CollectorEmitter Saturation Voltage VCE(sat) Vdc

(IC = 4.0 Adc, IB = 400 mAdc) 1.1
(IC = 10 Adc, IB = 3.3 Adc) 3.0

BaseEmitter On Voltage

(IC = 4.0 Adc, VCE = 4.0 Vdc)
VBE(on) 1.8 Vdc

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased Is/b 3.0 Adc

(VCE = 30 Vdc, t = 1.0 s; Nonrepetitive)

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth Product fT 2.5 MHz
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)

SmallSignal Current Gain

(VCE = 4.0 Vdc, IC = 1.0 Adc, f = 1.0 kHz)
(1) Pulse Test: Pulse Width = 300 s, Duty Cycle
2.0%.
hfe 15 kHz

NOTE: For additional design curves, refer to electrical characteristics curves of 2N3055.

100 There are two limitations on the power handling ability of

50 a transistor: average junction temperature and second
IC, COLLECTOR CURRENT (AMPS)

30 breakdown. Safe operating area curves indicate IC VCE

20
300 s limits of the transistor that must be observed for reliable
10 1.0ms
operation; i.e., the transistor must not be subjected to greater
5.0 dc dissipation than the curves indicate.
3.0 10ms
The data of Figure 2 is based on TC = 25
C; TJ(pk) is
2.0 SECONDARY BREAKDOWN LIMIT variable depending on power level. Second breakdown
1.0 BONDING WIRE LIMIT pulse limits are valid for duty cycles to 10% but must be
THERMAL LIMIT @ TC = 25C
0.5 derated for temperature.
0.3
0.2 TJ = 150C
0.1
1.0 2.0 4.0 6.0 10 20 40 60
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 2. Maximum Rated Forward Bias

Safe Operating Area

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 TIP3055 TIP2955

PACKAGE DIMENSIONS

CASE 340D02
ISSUE E

C
B Q E NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.

U 4 MILLIMETERS INCHES
DIM MIN MAX MIN MAX
A A --- 20.35 --- 0.801
S L
B 14.70 15.20 0.579 0.598
C 4.70 4.90 0.185 0.193
1 2 3 D 1.10 1.30 0.043 0.051
K
E 1.17 1.37 0.046 0.054
G 5.40 5.55 0.213 0.219
H 2.00 3.00 0.079 0.118
J 0.50 0.78 0.020 0.031
K 31.00 REF 1.220 REF
L --- 16.20 --- 0.638
Q 4.00 4.10 0.158 0.161
S 17.80 18.20 0.701 0.717
D J U 4.00 REF 0.157 REF
H V 1.75 REF 0.069
V STYLE 1:
G PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR

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 TIP3055 TIP2955

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