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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L MOSVI)

Chopper Regulator, DCDC Converter and Motor Drive
Applications Unit: mm

l 4 V gate drive
l Low drainsource ON resistance : RDS (ON) = 0.13 (typ.)
l High forward transfer admittance : |Yfs| = 2.5 S (typ.)
l Low leakage current : IDSS = 100 A (max) (VDS = 30 V)
l Enhancementmode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)

Maximum Ratings (Ta = 25C)

Characteristics Symbol Rating Unit

Drainsource voltage VDSS 30 V

Draingate voltage (RGS = 20 k) VDGR 30 V
Gatesource voltage VGSS 20 V
DC (Note 1) ID 2 A
Drain current
Pulse (Note 1) IDP 6 A
Drain power dissipation PD 0.5 W
Drain power dissipation (Note 2) PD 1.5 W JEDEC
Single pulse avalanche energy JEITA
EAS 56 mJ
(Note 3)
Avalanche current IAR 2 A

Repetitive avalanche energy (Note 4) EAR 0.05 mJ Weight: 0.05 g (typ.)

Channel temperature Tch 150 C
Storage temperature range Tstg 55~150 C

Thermal Characteristics Marking

Characteristics Symbol Max Unit

Thermal resistance, channel to

Rth (cha) 250 C / W Z C
Note 1: Please use devices on condition that the channel temperature is below 150C.
Note 2: Mounted on ceramic substrate (25.4 mm 25.4 mm 0.8 mm)
(The two digits represent
Note 3: VDD = 25 V, Tch = 25C (initial), L = 10 mH, RG = 25 , IAR = 2 A
the part number.)
Note 4: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.

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Electrical Characteristics (Ta = 25C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS VGS = 16 V, VDS = 0 V 10 A

Drain cutoff current IDSS VDS = 30 V, VGS = 0 V 100 A
Drainsource breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 30 V
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 0.8 2.0 V
VGS = 4 V, ID = 1 A 0.18 0.25
Drainsource ON resistance RDS (ON)
VGS = 10 V, ID = 1 A 0.13 0.18
Forward transfer admittance |Yfs| VDS = 10 V, ID = 1 A 1.2 2.5 S
Input capacitance Ciss 140
Reverse transfer capacitance Crss VDS = 10 V, VGS = 0 V, f = 1 MHz 30 pF

Output capacitance Coss 80

Rise time tr 10

Turnon time ton 15

Switching time ns
Fall time tf 85

Turnoff time toff 195

Total gate charge (gatesource

Qg 5.8
plus gatedrain)
VDD 24 V, VGS = 10 V, ID = 2 A nC
Gatesource charge Qgs 4.3
Gatedrain (miller) Charge Qgd 1.5

SourceDrain Ratings and Characteristics (Ta = 25C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Continuous drain reverse current

(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode) VDSF IDR = 2 A, VGS = 0 V 1.5 V
Reverse recovery time trr 50 ns
IDR = 2 A, VGS = 0 V, dIDR / dt = 50 A / s
Reverse recovery charge Qrr 20 nC

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RG = 25 1 B VDSS
VDD = 25 V, L = 10 mH E AS = L I2

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devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability
Handbook etc..

The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or
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document shall be made at the customers own risk.

The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
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The information contained herein is subject to change without notice.

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