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BS250

Vishay Semiconductors
formerly General Semiconductor

DMOS Transistor (P-Channel)

TO-226AA (TO-92)

0.181 (4.6) 0.142 (3.6)


Features
min. 0.492 (12.5) 0.181 (4.6)

High input impedance


High-speed switching
No minority carrier storage time
CMOS logic compatible input
No thermal runaway
No secondary breakdown
On special request, this transistor is also
manufactured in the pin configuration TO-18.

max. Mechanical Data


0.022 (0.55)
Case: TO-92 Plastic Package
0.098 (2.5) Weight: approx. 0.18 grams
Dimensions in inches
and (millimeters) Packaging Codes/Options:
E6/Bulk- 5K per container, 20K/box
E7/4K per Ammo tape, 20K/box
Bottom
View

Maximum Ratings and Thermal Characteristics (TA = 25C unless otherwise noted)

Parameter Symbol Limit Unit


Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage VDGS 60 V
Gate-Source-Voltage (pulsed) VGS 20 V
Drain Current (continuous) ID 250 mA
(1)
Power Dissipation at Tamb = 25C Ptot 0.83 W
(1)
Thermal Resistance Junction to Ambient Air RJA 150 C/W
Junction Temperature Tj 150 C
Storage Temperature Range TS 65 to +150 C
Note:
(1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case.

Document Number 88180 www.vishay.com


10-May-02 1

This datasheet has been downloaded from http://www.digchip.com at this page


BS250
Vishay Semiconductors
formerly General Semiconductor

Electrical Characteristics (T J = 25C unless otherwise noted)

Parameter Symbol Test Condition Min Typ Max Unit


Drain-Source Breakdown Voltage V(BR)DSS ID = 100A, VGS = 0 60 70 V
Gate-Source Threshold Voltage VGS(th) VGS = VDS, ID = 1mA 1.0 2.0 3.0 V
Gate-Body Leakage Current IGSS VGS = 15V, VDS = 0 20 nA
Drain Cutoff Current IDSS VDS = 25V, VGS = 0 0.5 A
Drain-Source ON Resistance RDS(on) VGS = 10V, ID = 0.2A 3.5 5.0
VDS = 10V, ID = 0.2A
Forward Transconductance gm 150 mS
f = 1MHz
VDS = 10V, VGS = 0,
Input Capacitance Ciss 60 pF
f = 1MHz
Turn-On Time ton VGS = 10V, VDS = 10V 5 ns
Turn-Off Time toff RD = 100 25 ns

Inverse Diode
Parameters Symbol Test Condition Value Unit
Maximum Forward Current (continuous) IF Tamb = 25C 0.3 A
VGS = 0, IF = 0.12A
Forward Voltage Drop (typ.) VF 0.85 V
Tj = 25C

www.vishay.com Document Number 88180


2 10-May-02
BS250
Vishay Semiconductors
formerly General Semiconductor

Ratings and
Characteristic Curves (TA = 25C unless otherwise noted)

Document Number 88180 www.vishay.com


10-May-02 3
BS250
Vishay Semiconductors
formerly General Semiconductor

Ratings and
Characteristic Curves (TA = 25C unless otherwise noted)

www.vishay.com Document Number 88180


4 10-May-02
BS250
Vishay Semiconductors
formerly General Semiconductor

Ratings and
Characteristic Curves (TA = 25C unless otherwise noted)

Document Number 88180 www.vishay.com


10-May-02 5