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DEE2023
END OF CHAPTER
CLASS : DEE2A.
1) a. Explain the formation of depletion region with the aid of a suitable
diagram.
Depletion region
Depletion region is formed when some of the free electrons in the n-region diffuse
across the junction and combine with holes to form negative join. Thus, leaving
behind positive ions at the donor impurity sites.
The positive potential of the DC is now being applied to the n region, and the
positive potential of the DC source has been applied to the p region.
The free electrons in the n region is travelled to the positive terminal of the
voltage source and leaving behind a large number of positive ions at the
junction.
Electrons from the negative terminal of the source are attracted to the holes in
the p region of the P-N junction.
c. Explain the effects towards the area of depletion region, junction
resistance and current flow when a P-N junction is supplied with reverse
biased voltage.
Extremely small current called the leakage current or reverse current will past
through the P-N junction.
The minority carriers are forced toward the junction, where they combine,
producing small current.
The P-N junction resistance is extremely high (R ).
Forward Bias
Compressed VF@VD
0.5v
Vmax / Burning
Level
IR @ -ID
b. Draw schematic diagram that show a diode is forward biased and reverse biased.
act like:
zener diode
Anode Cathode
This zener diode constructed to operate at voltage that are equal to or greater
than the breakdown voltage rating.
Can handle high values of reverse current and still safely dissipate any heat
that was generated.
3) a. Illustrate the characteristics of zener diode as a voltage regulator.
Forward current +I
Constant voltage
Reverse current - I
b. Explain the operation of LED, photo diode and laser diode using suitable
diagrams.
anod cathode
Anod cathode
Anode
Laserdiode is a semiconductor device that produces coherent radiation (in which
the waves are all at the same frequency and phase) in the visible or infrared
spectrum when current passes through it.
4) Referring to the circuit in figure 1, construct the DC loadline for the circuit. Plot
the Q- point of the silicon transistor. (Show all calculations)
= 100
VBE = 0.7V Vcc/Rc 8mA
VCC = 12V
RC = 1.5K
RB = 200K ICQ Q - ponit
5.65mA
VCE(V)
3.525v VCEQ VCC 12v