Electronic Devices and Circuits:

- At room temperature, the current in an intrinsic semiconductor is due to holes and electrons

- Work function is the minimum energy required by the fastest electron at 0 K to escape from the
metal surface.
- In Schottky diode there is no charge storage and hence almost zero reverse recovery time.

- A transistor has a current gain of 0.99 in the CB mode. Its current gain in the CC mode is

- Emitter is p-type in p-n-p transistor. Therefore, holes are majority carriers.

- In an n channel JFET, the gate is p type

- Only the intensity of incident radiation governs the amount of photoelectric emission.

- The increase in reverse resistance is due to widening of depletion layer.

- At very high temperatures the extrinsic semiconductors become intrinsic because: band to
band transition dominants over impurity ionization; Covalent bonds are broken.
- Ferrite is a low density material of composition with Fe2O3 x O, where x is a bivalent metal, such
as Cobart, Ni, Mn. These magnetic materials having very low loss of current and used in high
frequency circuit. Ferrite have low resistivity.

- Addition of acceptor atom brings Fermi level closer to valence band.

In a p type material the Fermi level is 0.3 eV above valence band. The concentration of acceptor
atoms is increased. The new position of Fermi level is likely to be: 0.28 eV above valence band

- An LED has a rating of 2 V and 10 mA. It is used along with 6V battery. The range of series
resistance is:

R= = 400.
R must be at least 400 so that current in LED does not exceed 10 mA.

- A PIN diode has p and n doped regions separated by intrinsic layer

- A transistor has two p-n junctions. The batteries should be connected such that: one junction
is forward biased and the other is reverse biased

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