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RoHS
Nell High Power Products
FRED
Ultrafast Soft Recovery Diode, 2 x 10 A
FEATURES
Ultrafast recovery
Ultrasoft recovery
Very low l RRM
Very low Q rr
Specified at operating conditions
Designed and qualified for industrial level
BENEFITS
Reduced RFI and EMI
TO-3PB
Reduced power loss in diode
and switching transistor.
Higher frequency operation
Reduced snubbing common
cathode
Reduced parts count 2
APPLICATIONS
Switching mode power supplies
UPS
DC/DC converters 1 3
Free wheeling diodes Anode Anode
1 2 2
Inverters Common
Motor drives cathode
DESCRIPTION
D92-02 is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial
construction and advanced processing techniques
it features a superb combination of characteristics PRODUCT SUMMARY
which result in performance which is unsurpassed
VR 200 V
by any rectifier previously available. With basic
ratings of 200V and 10 A per leg continuous current, VF at 10A at 25 C 0.95 V
the D92-02 is especially well suited for use as the IF(AV) 2 x 10 A
companion diode for IGBTs and MOSFETs. The FRED
features combine to offer designers a rectifier with trr (typical) 35 ns
lower noise and significantly lower switching losses TJ (maximum) 150 C
in both the diode and the switching transistor. These
FRED advantages can help to significantly reduce Qrr (typical) 25 nC
snubbing, component count and heatsink sizes. lRRM (typical) 1.9 A
per leg 10
Maximum continuous forward current IF
per device 50Hz square
20 A
wave duty = , T C =115C
Single pulse forward current (Peak forward current per leg) l FSM 100
Maximum repetitive forward current (per leg) l FRM 40
Operating junction and storage temperature range T J , T Stg - 55 to + 150 C
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SEMICONDUCTOR N-D92-02 RoHS
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Nell High Power Products
ELECTRICAL SPECIFICATIONS (TJ = 25 C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Cathode to anode
VBR IR = 100 A 200 - -
breakdown voltage
IF = 10 A - 0.9 0.95 V
Maximum forward voltage VFM IF = 20 A - 1 -
IF = 10 A, TJ = 125 C - 0.8 -
t rr2 TJ = 125 C - 35 -
l RRM1 TJ = 25 C IF= 10A - 1.9 -
Peak recovery current dIF/dt = -200 A/s A
l RRM2 TJ = 125 C - 4.8 -
VR = 160 V
Q rr1 TJ = 25 C - 25 -
Reverse recovery charge nC
Q rr2 TJ = 125 C - 78 -
6 - 12 kgf . cm
Mounting torque
(5) - (10) (lbf . in)
Marking device Case style TO-3PB (JEDEC) D92-02
1 2 3
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SEMICONDUCTOR N-D92-02 RoHS
RoHS
Nell High Power Products
Fig.1 Maximum forward voltage drop Fig.2 Typical values of reverse current vs.
characteristics reverse voltage
lnstantaneous forward current, I F (A)
100 100
T J =150C
T J =150C
T J =125C
0.1
1 T J =25C
0.01 T J =25 C
0.1 0.001
0 0.4 0.8 1.2 1.6 2.0 0 50 100 150 200 250
Fig.3 Typical junction capacitance vs. Fig.4 Maximum allowable case temperature vs.
reverse voltage average forward current
1000 160
Allowable case temperature ( C)
Junction capacitance, C T (pF)
150
140
10 100
0 10 100 1000 0 3 6 9 12 15
10
Thermal lmpedance, R th(j-c) (C/W)
P DM
t1
D = 0.50
0.1 D = 0.20 t2
D = 0.10
D = 0.05 Notes:
D = 0.02 1. Duty Factor D =t 1 /t 2.
Single pulse D = 0.01 2.Peak T J = PDM x R th(j-c) +T C
(thermal resistance) .
0.01
0.00001 0.0001 0.001 0.01 0.1 1
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SEMICONDUCTOR N-D92-02 RoHS
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Nell High Power Products
Fig.6 Forward power loss characteristics Fig.7 Typical reverse recovery time vs. dl F /dt
15 50
T J =125C
Average power loss (W)
12 40 T J =25C
RMS limit
9 30
t rr (ns)
D = 0.01
D = 0.02
6 D = 0.05 20
D = 0.10
D = 0.20
3 D = 0.50 10 l F = 20A
DC l F = 10A V R = 160V
l F = 5A
0 0
0 3 6 9 12 15 100 1000
Fig.8 Typical stored charge vs. dl F /dt Fig.9 Reverse recovery parameter test circuit
250
T J =125C V R =200V
200 T J =25C
l F = 20A
l F = 10A
0.01
150 l F = 5A
Q rr (nC)
L=70H
D.U.T.
100
D
dl F /dt
adjust
50 G IRFP250
V R = 160V
S
0
100 1000
dl F /dt(A/ s)
Note
(1) Formula used:T C = T J - (Pd+Pd REV ) x R thJC ;
Pd = Forward power loss = l F(AV) x V FM at (l F(AV) /D)(see fig.6);
Pd REV = lnverse power loss = V R1 x l R (1-D); l R at V R1 = Rated V R
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SEMICONDUCTOR N-D92-02 RoHS
RoHS
Nell High Power Products
(3)
t rr
IF
ta tb
0
(4)
Q rr
(2)
l RRM 0.5 l RRM
dl (rec)M /dt (5)
0.75 l RRM
(1) dl F /dt
(1) dl F /dt - rate of change of current (4) Q rr - area under curve defined by t rr
through zero crossing and l RRM
TO-3PB
5.0 0 . 2
15.60.4 4.80.2
2.0
1.8
9.6 2.00.1
19.90.3
4.0
3.2 0,1
2
20.0 min
4.0 max
3
+0.2 +0.2
1.05 -0.1 0.65 -0.1
common
cathode
2
1 2 3
1 3
Anode Anode
1 2 2
Common
cathode
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