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SEMICONDUCTOR N-D92-02 RoHS

RoHS
Nell High Power Products

FRED
Ultrafast Soft Recovery Diode, 2 x 10 A

FEATURES
Ultrafast recovery
Ultrasoft recovery
Very low l RRM
Very low Q rr
Specified at operating conditions
Designed and qualified for industrial level

BENEFITS
Reduced RFI and EMI
TO-3PB
Reduced power loss in diode
and switching transistor.
Higher frequency operation
Reduced snubbing common
cathode
Reduced parts count 2

APPLICATIONS
Switching mode power supplies
UPS
DC/DC converters 1 3
Free wheeling diodes Anode Anode
1 2 2
Inverters Common
Motor drives cathode

DESCRIPTION
D92-02 is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial
construction and advanced processing techniques
it features a superb combination of characteristics PRODUCT SUMMARY
which result in performance which is unsurpassed
VR 200 V
by any rectifier previously available. With basic
ratings of 200V and 10 A per leg continuous current, VF at 10A at 25 C 0.95 V
the D92-02 is especially well suited for use as the IF(AV) 2 x 10 A
companion diode for IGBTs and MOSFETs. The FRED
features combine to offer designers a rectifier with trr (typical) 35 ns
lower noise and significantly lower switching losses TJ (maximum) 150 C
in both the diode and the switching transistor. These
FRED advantages can help to significantly reduce Qrr (typical) 25 nC
snubbing, component count and heatsink sizes. lRRM (typical) 1.9 A

ABSOLUTE MAXIMUM RATINGS


PARAMETER SYMBOL TEST CONDITIONS VALUES UNIT
Cathode to anode voltage VR 200 V

per leg 10
Maximum continuous forward current IF
per device 50Hz square
20 A
wave duty = , T C =115C
Single pulse forward current (Peak forward current per leg) l FSM 100
Maximum repetitive forward current (per leg) l FRM 40
Operating junction and storage temperature range T J , T Stg - 55 to + 150 C

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SEMICONDUCTOR N-D92-02 RoHS
RoHS
Nell High Power Products
ELECTRICAL SPECIFICATIONS (TJ = 25 C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Cathode to anode
VBR IR = 100 A 200 - -
breakdown voltage
IF = 10 A - 0.9 0.95 V
Maximum forward voltage VFM IF = 20 A - 1 -
IF = 10 A, TJ = 125 C - 0.8 -

Maximum reverse V R = V R rated - - 15


IRM A
leakage current T J = 125C, V R = V R rated - - 250
Junction capacitance CT V R = 200V - 55 - pF
Series inductance LS Measured lead to lead 5 mm from package body - 8 - nH

DYNAMIC RECOVERY CHARACTERISTICS PERLEG(TJ = 25 C unless otherwise specified)


PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
I F = 0.5A, I R = 1.0A, I RR = 250mA (RG#1 CKT) - 14 20
t rr
IF = 1.0 A, dIF/dt = 50 A/s, VR =30 V, TJ = 25C - - 30
Reverse recovery time ns
t rr1 TJ = 25 C - 21 -

t rr2 TJ = 125 C - 35 -
l RRM1 TJ = 25 C IF= 10A - 1.9 -
Peak recovery current dIF/dt = -200 A/s A
l RRM2 TJ = 125 C - 4.8 -
VR = 160 V
Q rr1 TJ = 25 C - 25 -
Reverse recovery charge nC
Q rr2 TJ = 125 C - 78 -

THERMAL - MECHANICAL SPECIFICATIONS PER LEG


PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature Tlead 0.063 '' from case (1.6 mm) for 10 s - - 300 C
Junction to case,
- - 1.5
single leg conduction
RthJC
Junction to case,
- - 0.7
both legs conducting
K/W
Thermal resistance,
RthJA Typical socket mount - - 40
junction to ambient
Thermal resistance,
RthCS Mounting surface, flat, smooth and greased - 0.25 -
case to heatsink
- 5.5 - g
Weight
- 0.19 - oz.

6 - 12 kgf . cm
Mounting torque
(5) - (10) (lbf . in)
Marking device Case style TO-3PB (JEDEC) D92-02

ORDERING INFORMATION TABLE

Device code N - D92 - 02

1 2 3

1 - Nell Semiconductors product

2 - FRED family, type = D92, current rating = 10A x 2,


package outline = TO-3PB

3 - Voltage rating, 02 = 200V

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SEMICONDUCTOR N-D92-02 RoHS
RoHS
Nell High Power Products

Fig.1 Maximum forward voltage drop Fig.2 Typical values of reverse current vs.
characteristics reverse voltage
lnstantaneous forward current, I F (A)

100 100

T J =150C

Reverse current, l R (A)


10
T J =125 C
10
1 T J =100 C

T J =150C
T J =125C
0.1
1 T J =25C

0.01 T J =25 C

0.1 0.001
0 0.4 0.8 1.2 1.6 2.0 0 50 100 150 200 250

Forward voltage drop, V FM (V) Reverse voltage, V R (V)

Fig.3 Typical junction capacitance vs. Fig.4 Maximum allowable case temperature vs.
reverse voltage average forward current

1000 160
Allowable case temperature ( C)
Junction capacitance, C T (pF)

150

140

100 T J =25 C 130 DC

Square wave (D = 0.50)


120 Rated V R applied

110 See note (1)

10 100
0 10 100 1000 0 3 6 9 12 15

Reverse voltage, V R (V) Average forward current, l F(AV) (A)

Fig.5 Maximum thermal impedance R th(j-c) characteristics

10
Thermal lmpedance, R th(j-c) (C/W)

P DM

t1
D = 0.50
0.1 D = 0.20 t2
D = 0.10
D = 0.05 Notes:
D = 0.02 1. Duty Factor D =t 1 /t 2.
Single pulse D = 0.01 2.Peak T J = PDM x R th(j-c) +T C
(thermal resistance) .
0.01
0.00001 0.0001 0.001 0.01 0.1 1

Rectangular pulse duration, t 1 (s)

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SEMICONDUCTOR N-D92-02 RoHS
RoHS
Nell High Power Products

Fig.6 Forward power loss characteristics Fig.7 Typical reverse recovery time vs. dl F /dt

15 50

T J =125C
Average power loss (W)

12 40 T J =25C

RMS limit
9 30

t rr (ns)
D = 0.01
D = 0.02
6 D = 0.05 20
D = 0.10
D = 0.20
3 D = 0.50 10 l F = 20A
DC l F = 10A V R = 160V
l F = 5A

0 0
0 3 6 9 12 15 100 1000

Average forward current, l F(AV) (A) dl F /dt(A/ s)

Fig.8 Typical stored charge vs. dl F /dt Fig.9 Reverse recovery parameter test circuit

250

T J =125C V R =200V
200 T J =25C
l F = 20A
l F = 10A
0.01
150 l F = 5A
Q rr (nC)

L=70H

D.U.T.
100
D
dl F /dt
adjust
50 G IRFP250
V R = 160V
S
0
100 1000

dl F /dt(A/ s)

Note
(1) Formula used:T C = T J - (Pd+Pd REV ) x R thJC ;
Pd = Forward power loss = l F(AV) x V FM at (l F(AV) /D)(see fig.6);
Pd REV = lnverse power loss = V R1 x l R (1-D); l R at V R1 = Rated V R

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SEMICONDUCTOR N-D92-02 RoHS
RoHS
Nell High Power Products

Fig.10 Reverse recovery waveform and definitions

(3)
t rr
IF
ta tb
0

(4)
Q rr
(2)
l RRM 0.5 l RRM
dl (rec)M /dt (5)

0.75 l RRM

(1) dl F /dt

(1) dl F /dt - rate of change of current (4) Q rr - area under curve defined by t rr
through zero crossing and l RRM

(2) l RRM - peak reverse recovery current t rr xl RRM


Qrr =
2
(3) t rr - reverse recovery time measured
from zero crossing point of negative (5) dl (rec)M /dt - peak rate of change of
going l F to point where a line passing current during t b portion of t rr
through 0.75 l RRM and 0.50 l RRM
extrapolated to zero current.

TO-3PB
5.0 0 . 2

15.60.4 4.80.2
2.0

1.8

9.6 2.00.1
19.90.3

4.0

3.2 0,1

2
20.0 min

4.0 max

3
+0.2 +0.2
1.05 -0.1 0.65 -0.1

5.450.1 5.450.1 1.4

common
cathode
2

1 2 3

1 3
Anode Anode
1 2 2
Common
cathode

All dimensions in millimeters

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