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General Description 3
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
Item Sales Type Marking Package Packaging
1 SW B 038R10ES SW038R10ES TO-263 TUBE
2 SW P 038R10ES SW038R10ES TO-220 TUBE
3 SW T 038R10ES SW038R10ES TO-247 TUBE
Thermal characteristics
Value
Symbol Parameter Unit
TO-263 TO-220 TO-247
Rthjc Thermal resistance, Junction to case 0.61 0.58 0.48 oC/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Apr. 2017. Rev. 7.0 1/7
SW038R10ES
Electrical characteristic ( TC = 25oC unless otherwise specified )
VDS=100V, VGS=0V 1 uA
IDSS Drain to source leakage current
VDS=80V, TC=125oC 50 uA
On characteristics
VGS(TH) Gate threshold voltage VDS=VGS, ID=250uA 2 4 V
VGS=10V, ID=60A 3.6 4.5 m
RDS(ON) Drain to source on state resistance
VGS=10V, ID=120A 3.7 4.6 m
Gfs Forward transconductance VDS=8V, ID=60A 121 S
Dynamic characteristics
Ciss Input capacitance 8450
Coss Output capacitance VGS=0V, VDS=50V, f=1MHz 1050 pF
Crss Reverse transfer capacitance 15
td(on) Turn on delay time 87
VDS=50V, ID=30A, RG=25,
tr Rising time 171
VGS=10V ns
td(off) Turn off delay time 253
(note 4,5)
tf Fall time 168
Qg Total gate charge 132
VDS=80V, VGS=10V, ID=30A
Qgs Gate-source charge 35 nC
(note 4,5)
Qgd Gate-drain charge 43
Rg Gate resistance VDS=0V, Scan F mode 1.9
. Notes
1. Repeatitive rating : pulse width limited by junction temperature.
2. L =2.5mH, IAS = 30A, VDD = 50V, RG=25, Starting TJ = 25oC
3. ISD 30A, di/dt = 100A/us, VDD BVDSS, Staring TJ =25oC
4. Pulse Test : Pulse Width 300us, duty cycle 2%.
5. Essentially independent of operating temperature.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Apr. 2017. Rev. 7.0 2/7
SW038R10ES
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Apr. 2017. Rev. 7.0 3/7
SW038R10ES
Fig. 7. Gate charge characteristics Fig. 8. Capacitance Characteristics
Fig. 9. Maximum safe operating area(TO-263) Fig. 10. Maximum safe operating area(TO-220)
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Apr. 2017. Rev. 7.0 4/7
SW038R10ES
Fig. 12. Transient thermal response curve(TO-263)
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Apr. 2017. Rev. 7.0 5/7
SW038R10ES
Fig. 15. Gate charge test circuit & waveform
VDS
90%
RL
VDS
RGS
VDD
10% 10%
VIN
tON tOFF
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Apr. 2017. Rev. 7.0 6/7
SW038R10ES
Fig. 18. Peak diode recovery dv/dt test circuit & waveform
-
IS L di/dt
IS (DUT)
VDS IRM
*. dv/dt controlled by RG
*. Is controlled by pulse period Body diode forward voltage drop
DISCLAIMER
* All the data & curve in this document was tested in XIAN SEMIPOWER TESTING & APPLICATION CENTE
R.
* This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing.
* Qualification standards can also be found on the Web site (http://www.semipower.com.cn)
* Suggestions for improvement are appreciated, Please send your suggestions to samwin@samwinsemi.com
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Apr. 2017. Rev. 7.0 7/7