Ordering number:ENN572E

PNP/NPN Epitaxial Planar Silicon Transistors

2SA1016, 1016K/2SC2362, 2362K

High-Voltage Low-Noise Amp Applications

Package Dimensions
unit:mm
2003B
[2SA1016, 1016K/2SC2362, 2362K]
5.0
4.0 4.0

5.0
0.45
0.5

2.0
0.6
0.45 0.44

14.0
1 2 3
1 : Emitter
( ) : 2SA1016, 1016K 2 : Collecor
3 : Base
Specifications 1.3 1.3
SANYO : NP
Absolute Maximum Ratings at Ta = 25C
2SA1016K,
Parameter Symbol Conditions 2SA1016, 2SC2362 Unit
2SC2362K
Collector-to-Base Voltage VCBO ()120 ()150 V
Collector-to-Emitter Voltage VCEO ()100 ()120 V
Emitter-to-Base Voltage VEBO ()5 V
Collector Current IC ()50 mA
Collector Current (Pulse) ICP ()100 mA
Collector Dissipation PC 400 mW
Junction Temperature Tj 125 C
Storage Temperature Tstg 55 to +125 C

Electrical Characteristics at Ta = 25C

Ratings
Parameter Symbol Conditions Unit
min typ max
Collector Cutoff Current ICBO VCB=()80V, IE=0 ()1.0 A
Emitter Cutoff Current IEBO VEB=()4V, IC=0 ()1.0 A
DC Current Gain hFE VCE=()6V, IC=()1mA 160* 960*
(110)
Gain-Bandwidth Product fT VCE=()6V, IC=()1mA MHz
130
(2.2)
Output Capacitance Cob VCB=()10V, f=1MHz pF
1.8
* : The 2SA1016, K/2SC2362, K are classified by 1mA hFE as follows : Continued on next page.
Rank F G H
hFE 160 to 320 280 to 560 480 to 960

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircrafts
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
70502TN (KT)/71598HA (KT)/3187AT/3075KI/1313KI No.572-1/4
 2SA1016, 1016K/2SC2362, 2362K
Continued from preceding page.
Ratings
Parameter Symbol Conditions Unit
min typ max
Collector-to-Emitter Saturation Voltage VCE(sat) IC=()10mA, IB=()1mA ()0.5 V
IC=()10A, IE=0 [A1016, C2362] ()120 V
Collector-to-Base Breakdown Voltage V(BR)CBO
IC=()10A, IE=0 [A1016K, C2362K] ()150 V
IC=()1mA, RBE= [A1016, C2362] ()100 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO
IC=()1mA, RBE= [A1016K, C2362K] ()120 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=()10A, IC=0 ()5 V
Noise Level VNO(ave) VCC=30V, IC=1mA, Rg=56k, VG=77dB/1kHz 35 mV
Noise Peak Level VNO(peak) VCC=30V, IC=1mA, Rg=56k, VG=77dB/1kHz 200 mV

IC -- VCE IC -- VCE
--12 12
2SA1016, 1016K 2SC2362, 2362K

--10 0A 10
--35 250A
Collector Current, IC mA

Collector Current, IC mA
0A
--30 A
--8 --250 8
200A
A
--200

--150 150A
--6 A 6

--4 --100A 4 100A

--50A
--2 2 50A

IB=0 IB=0
0 0
0 --10 --20 --30 --40 --50 0 10 20 30 40 50
Collector-to-Emitter Voltage, VCE V ITR02951 Collector-to-Emitter Voltage, VCE V ITR02952
IB -- VBE IB -- VBE
--100 100
2SA1016, 1016K 2SC2362, 2362K
VCE=--5V VCE=5V
--80 80
Base Current, IB A
Base Current, IB A

--60 60

--40 40

--20 20

0 0
0 --0.2 --0.4 --0.6 --0.8 --1.0 0 0.2 0.4 0.6 0.8 1.0
Base-to-Emitter Voltage, VBE V ITR02953
Base-to-Emitter Voltage, VBE V ITR02954
fT -- IC fT -- IC
5 5
2SA1016, 1016K 2SC2362, 2362K
Gain-Bandwidth Product, fT MHz

Gain-Bandwidth Product, fT MHz

VCE=--6V VCE=6V
3 3

2 2

100 100

7 7

5 5

3 3

2 2
1.0 2 3 5 7 10 2 3 5 1.0 2 3 5 7 10 2 3 5
Collector Current, IC mA ITR02955 Collector Current, IC mA ITR02956

No.572-2/4
 2SA1016, 1016K/2SC2362, 2362K
hFE -- IC hFE -- IC
1000 1000
2SA1016, 1016K 2SC2362, 2362K
7 7
VCE=--6V VCE=6V
5
5
3
3
DC Current Gain, hFE

DC Current Gain, hFE

2
2
100
7 100
5 7
3 5

2
3

10 2

7
5 10
--0.1 2 3 5 --1.0 2 3 5 --10 2 3 5 --100 0.1 2 3 5 1.0 2 3 5 10 2 3 5 100 2
Collector Current, IC mA ITR02957 Collector Current, IC mA ITR02958
Cob -- VCB Cob -- VCB
10 10
2SA1016, 1016K 2SC2362, 2362K
f=1MHz f=1MHz
7 7
Output Capacitance, Cob pF

Output Capacitance, Cob pF

5 5

3 3

2 2

1.0 1.0

7 7
--1.0 2 3 5 7 --10 2 3 5 1.0 2 3 5 7 10 2 3 5 7 100
Collector-to-Base Voltage, VCB -- V ITR02959 Collector-to-Base Voltage, VCB -- V ITR02960
Contour of NF PC -- Ta
100k 500
2SA1016, 1016K
12

5 f=10Hz
dB
Signal Source Resistance, Rg

3 f=1Hz
Collector Dissipation, PC mW

400
2 VCE=--6V
15
dB

10k
8dB

2S SC2
4dB

300
NF

5
A 36
2
2dB

10 2
=1

16 , 2
dB

3
, 1 36
6dB

2
01 2K

2 200
6K

4d dB
1.0k B
6
8d dB
5 12 B
15 dB 100
3 dB
2

0.1k 0
--0.001 2 3 5 --0.01 2 3 5 --0.1 2 3 5 --1.0 2 3 5 --10 0 25 50 75 100 125 150
Collector Current, IC mA ITR02961 Ambient Temperature, Ta C ITR02962
Contour of NF Contour of NF
100k 100
2SA1016, 1016K 2SC2362, 2362K
5 f=100Hz 5 VCE=6V
Signal Source Resistance, Rg k
Signal Source Resistance, Rg

f=1Hz
14
15 B

3 3 f=10Hz
dB
dB
12

2 VCE=--6V 2
8dB
d

8d
NF

B
4dB

6d B
NF

10k 10
12
=1
2dB

B
dB

4d

dB
=0

1dB
.7

5 5
2d
dB

3 1d 3 2d
2d B
6dB

2 2 B
B 4d
4d B
1.0k B 1.0 6d
6d 8d B
8 B B
5 12 dB 5 12
15 dB 3
dB
3
dB
14

2 2
dB

0.1k 0.1
--0.001 2 3 5 --0.01 2 3 5 --0.1 2 3 5 --1.0 2 3 5 --10 1.0 2 3 5 10 2 3 5 100 2 3 5 1000 2 3 5 10000
Collector Current, IC mA ITR02963 Collector Current, IC A ITR02964

No.572-3/4
 2SA1016, 1016K/2SC2362, 2362K
Contour of NF Contour of NF
100k 100
2SA1016, 1016K 2SC2362, 2362K

15
5 f=1kHz 5 f=1kHz

Signal Source Resistance, Rg k

Signal Source Resistance, Rg

8d
dB
f=1Hz

12
3 VCE=6V

B
3

6d
dB
8d

NF
2 VCE=--6V 2

4d
B
B
4dB B

=1

B
2d
2d

dB

B
10k 10

1dB
0.7
NF

6dB
5 0.7 5

dB
=1
dB dB
3 3
1d
2 B 2
2d 4d 2
4d B B dB
1.0k 1.0
B 6d
6 B
5 8d dB 5
12 B 12 8dB
3 15 dB 3 dB
2 dB 2 14
dB
0.1k 0.1
--0.001 2 3 5 --0.01 2 3 5 --0.1 2 3 5 --1.0 2 3 5 --10 1.0 2 3 5 10 2 3 5 100 2 3 5 1000 2 3 5 10000
Collector Current, IC mA ITR02965 Collector Current, IC A ITR02966
Contour of NF
100k
2SA1016, 1016K
15 B

5 f=10kHz
12
dB
Signal Source Resistance, Rg

f=1Hz
d
8d

3
NF

2 VCE=--6V
=0

4dB
.5d

2dB

6dB
1dB

10k
B

0.7
dB

5 0.
7d
3
1d B
2 B
2d
1.0k 4d B
B
6d
5 B
8d

3
12
B

dB
15

2
dB

0.1k
--0.001 2 3 5 --0.01 2 3 5 --0.1 2 3 5 --1.0 2 3 5 --10
Collector Current, IC mA ITR02967

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of July, 2002. Specifications and information herein are subject to
change without notice.
PS No.572-4/4