SiHG15N60E

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Vishay Siliconix
E Series Power MOSFET
FEATURES
PRODUCT SUMMARY
Low figure-of-merit (FOM) Ron x Qg
VDS (V) at TJ max. 650
Low input capacitance (Ciss)
RDS(on) max. () at 25 C VGS = 10 V 0.28
Reduced switching and conduction losses
Qg max. (nC) 78
Ultra low gate charge (Qg)
Qgs (nC) 9
Qgd (nC) 17
Avalanche energy rated (UIS)
Configuration Single Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

APPLICATIONS
D Server and telecom power supplies
TO-247AC
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
Lighting
G
- High-intensity discharge (HID)
S - Fluorescent ballast lighting
D
G Industrial
S
- Welding
N-Channel MOSFET - Induction heating
- Motor drives
- Battery chargers
- Renewable energy
- Solar (PV inverters)

ORDERING INFORMATION
Package TO-247AC
Lead (Pb)-free and Halogen-free SiHG15N60E-GE3

ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 600
V
Gate-Source Voltage VGS 30
TC = 25 C 15
Continuous Drain Current (TJ = 150 C) VGS at 10 V ID
TC = 100 C 9.6 A
Pulsed Drain Current a IDM 39
Linear Derating Factor 1.4 W/C
Single Pulse Avalanche Energy b EAS 102 mJ
Maximum Power Dissipation PD 180 W
Operating Junction and Storage Temperature Range TJ, Tstg -55 to +150 C
Drain-Source Voltage Slope VDS = 0 V to 80 % VDS 70
dV/dt V/ns
Reverse Diode dV/dt d 7.7
Soldering Recommendations (Peak temperature) c for 10 s 300 C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 C, L = 11.6 mH, Rg = 25 , IAS = 4.2 A.
c. 1.6 mm from case.
d. ISD ID, dI/dt = 100 A/s, starting TJ = 25 C.

S16-0659-Rev. A, 18-Apr-16 1 Document Number: 91829

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 62
C/W
Maximum Junction-to-Case (Drain) RthJC - 0.7

SPECIFICATIONS (TJ = 25 C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 A 600 - - V
VDS Temperature Coefficient VDS/TJ Reference to 25 C, ID = 1 mA - 0.71 - V/C
Gate-Source Threshold Voltage (N) VGS(th) VDS = VGS, ID = 250 A 2 - 4 V
VGS = 20 V - - 100 nA
Gate-Source Leakage IGSS
VGS = 30 V - - 1 A
VDS = 600 V, VGS = 0 V - - 1
Zero Gate Voltage Drain Current IDSS A
VDS = 480 V, VGS = 0 V, TJ = 125 C - - 10
Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 8 A - 0.23 0.28
Forward Transconductance gfs VDS = 30 V, ID = 8 A - 4.6 - S
Dynamic
Input Capacitance Ciss VGS = 0 V, - 1350 -
Output Capacitance Coss VDS = 100 V, - 70 -
Reverse Transfer Capacitance Crss f = 1 MHz - 5 -
Effective Output Capacitance, Energy pF
Co(er) - 53 -
Related a
VDS = 0 V to 480 V, VGS = 0 V
Effective Output Capacitance, Time
Co(tr) - 177 -
Related b
Total Gate Charge Qg - 39 78
Gate-Source Charge Qgs VGS = 10 V ID = 8 A, VDS = 480 V - 11 - nC
Gate-Drain Charge Qgd - 17 -
Turn-On Delay Time td(on) - 16 32
Rise Time tr - 26 52
VDD = 480 V, ID = 8 A, ns
Turn-Off Delay Time td(off) VGS = 10 V, Rg = 9.1 - 41 82
Fall Time tf - 22 44
Gate Input Resistance Rg f = 1 MHz, open drain 0.3 0.86 1.7
Drain-Source Body Diode Characteristics
MOSFET symbol
Continuous Source-Drain Diode Current IS D
- - 15
showing the
A
integral reverse G

Pulsed Diode Forward Current ISM p - n junction diode S

- - 60

Diode Forward Voltage VSD TJ = 25 C, IS = 8 A, VGS = 0 V - 1.0 1.2 V

Reverse Recovery Time trr - 302 604 ns
TJ = 25 C, IF = IS = 8 A,
Reverse Recovery Charge Qrr - 4.0 8 C
dI/dt = 100 A/s, VR = 25 V
Reverse Recovery Current IRRM - 24 - A
Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS.
b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS.

S16-0659-Rev. A, 18-Apr-16 2 Document Number: 91829

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 SiHG15N60E
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Vishay Siliconix
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)

50 TOP 15 V
14 V 3
TJ = 25 C
ID, Drain-to-Source Current (A)

13 V
12 V
ID = 8 A

On Resistance (Normalized)
40 11 V
10 V 2.5

RDS(on), Drain-to-Source
9V
8V
7V
30 6V 2
BOTTOM 5 V

1.5 VGS = 10 V
20

1
10
0.5

0
0 5 10 15 20 25 30 0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature (C)

Fig. 1 - Typical Output Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature

30 10 000
TOP 15 V
14 V TJ = 150 C
ID, Drain-to-Source Current (A)

13 V
25 12 V Ciss
11 V
10 V 1000
Capacitance (pF)

9V
20 8V VGS = 0 V, f = 1 MHz
7V Ciss = Cgs + Cgd, Cds Shorted
BOTTOM 6 V
Crss = Cgd
15 100 Coss Coss = Cds + Cgd

10
10 Crss

5
5V
0 1
0 5 10 15 20 25 30 0 100 200 300 400 500 600
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

50 10
ID, Drain-to-Source Current (A)

9
TJ = 25 C
40 8
2000
7
30 6
Eoss (J)
Coss (pF)

Coss
5
TJ = 150 C
20 Eoss
4
200
3
10 2

1
0 20 0
0 5 10 15 20 25 0 100 200 300 400 500 600
VDS
VGS, Gate-to-Source Voltage (V)

Fig. 3 - Typical Transfer Characteristics Fig. 6 - Coss and Eoss vs. VDS

S16-0659-Rev. A, 18-Apr-16 3 Document Number: 91829

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 SiHG15N60E
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Vishay Siliconix

24 20
VDS = 480 V
VGS, Gate-to-Source Voltage (V)

VDS = 300 V
20 VDS = 120 V

ID, Drain Current (A)

15
16

12 10

8
5
4

0 0
0 20 40 60 80 25 50 75 100 125 150
Qg, Total Gate Charge (nC) TJ, Case Temperature (C)

Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 10 - Maximum Drain Current vs. Case Temperature

100 750

725
ISD, Reverse Drain Current (A)

Breakdown Voltage (V)

TJ = 150 C 700
VDS, Drain-to-Source

TJ = 25 C
10 675

650

625

1 600

575

VGS = 0 V 550

0.1 525
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160
VSD, Source-Drain Voltage (V) TJ, Junction Temperature (C)

Fig. 8 - Typical Source-Drain Diode Forward Voltage Fig. 11 - Temperature vs. Drain-to-Source Voltage

100 Operation in this Area

Limited by RDS(on) IDM Limited

10
100 s
ID, Drain Current (A)

Limited by RDS(on)*

1
1 ms

0.1 10 ms
TC = 25 C
TJ = 150 C
Single Pulse BVDSS Limited
0.01
1 10 100 1000
VDS, Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified

Fig. 9 - Maximum Safe Operating Area

S16-0659-Rev. A, 18-Apr-16 4 Document Number: 91829

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 SiHG15N60E
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Vishay Siliconix

1
Normalized Effective Transient Duty Cycle = 0.5
Thermal Impedance
0.2

0.1
0.05 0.02
0.1
Single Pulse

0.01
0.0001 0.001 0.01 0.1 1
Pulse Time (s)

Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case

RD VDS
VDS
tp
VGS VDD
D.U.T.
RG
+
- VDD
VDS
10 V
Pulse width 1 s
Duty factor 0.1 %
IAS

Fig. 13 - Switching Time Test Circuit Fig. 16 - Unclamped Inductive Waveforms

VDS
QG
90 % 10 V

QGS QGD

10 % VG
VGS
td(on) tr td(off) tf

Charge
Fig. 14 - Switching Time Waveforms Fig. 17 - Basic Gate Charge Waveform

L Current regulator
VDS Same type as D.U.T.
Vary tp to obtain
required IAS
50 k

RG D.U.T + 12 V 0.2 F
0.3 F
V DD
- +
IAS VDS
D.U.T. -
10 V
tp 0.01 VGS

3 mA
Fig. 15 - Unclamped Inductive Test Circuit
IG ID
Current sampling resistors

Fig. 18 - Gate Charge Test Circuit

S16-0659-Rev. A, 18-Apr-16 5 Document Number: 91829

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 SiHG15N60E
www.vishay.com
Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

+ Circuit layout considerations

D.U.T.
Low stray inductance
Ground plane
Low leakage inductance
current transformer
-

- +
-

Rg dV/dt controlled by Rg +
Driver same type as D.U.T. VDD
-
ISD controlled by duty factor D
D.U.T. - device under test

Driver gate drive

Period P.W.
D=
P.W. Period

VGS = 10 Va

D.U.T. lSD waveform

Reverse
recovery Body diode forward
current current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
VDD

Re-applied
voltage
Body diode forward drop
Inductor current

Ripple 5 % ISD

Note
a. VGS = 5 V for logic level devices

Fig. 19 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91829.

S16-0659-Rev. A, 18-Apr-16 6 Document Number: 91829

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 13-Jun-16 1 Document Number: 91000