P2N2222A

Amplifier Transistors
NPN Silicon

Features
These are PbFree Devices* http://onsemi.com

COLLECTOR
1
MAXIMUM RATINGS (TA = 25C unless otherwise noted)
Characteristic Symbol Value Unit 2
Collector Emitter Voltage VCEO 40 Vdc BASE

Collector Base Voltage VCBO 75 Vdc

3
EmitterBase Voltage VEBO 6.0 Vdc
EMITTER
Collector Current Continuous IC 600 mAdc
Total Device Dissipation @ TA = 25C PD 625 mW
Derate above 25C 5.0 mW/C
Total Device Dissipation @ TC = 25C PD 1.5 W TO92
Derate above 25C 12 mW/C CASE 29
STYLE 17
Operating and Storage Junction TJ, Tstg 55 to C
Temperature Range +150
12 1
THERMAL CHARACTERISTICS 3 2 3
STRAIGHT LEAD BENT LEAD
Characteristic Symbol Max Unit
BULK PACK TAPE & REEL
Thermal Resistance, Junction to Ambient R0JA 200 C/W AMMO PACK

Thermal Resistance, Junction to Case R0JC 83.3 C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum MARKING DIAGRAM
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
P2N2
222A

AYWW

A = Assembly Location
Y = Year
WW = Work Week
= PbFree Package
(Note: Microdot may be in either location)

ORDERING INFORMATION
Device Package Shipping
P2N2222AG TO92 5000 Units/Bulk
(PbFree)

P2N2222ARL1G TO92 2000/Tape & Ammo

*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
(PbFree)
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2013 1 Publication Order Number:

January, 2013 Rev. 7 P2N2222A/D
 P2N2222A

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage V(BR)CEO Vdc
(IC = 10 mAdc, IB = 0) 40
Collector Base Breakdown Voltage V(BR)CBO 75 Vdc
(IC = 10 Adc, IE = 0)
EmitterBase Breakdown Voltage V(BR)EBO Vdc
(IE = 10 Adc, IC = 0) 6.0
Collector Cutoff Current ICEX nAdc
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc) 10
Collector Cutoff Current ICBO Adc
(VCB = 60 Vdc, IE = 0) 0.01
(VCB = 60 Vdc, IE = 0, TA = 150C) 10
Emitter Cutoff Current IEBO 10 nAdc
(VEB = 3.0 Vdc, IC = 0)
Collector Cutoff Current ICEO nAdc
(VCE = 10 V) 10
Base Cutoff Current IBEX nAdc
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc) 20
ON CHARACTERISTICS
DC Current Gain hFE
(IC = 0.1 mAdc, VCE = 10 Vdc) 35
(IC = 1.0 mAdc, VCE = 10 Vdc) 50
(IC = 10 mAdc, VCE = 10 Vdc) 75
(IC = 10 mAdc, VCE = 10 Vdc, TA = 55C) 35
(IC = 150 mAdc, VCE = 10 Vdc) (Note 1) 100 300
(IC = 150 mAdc, VCE = 1.0 Vdc) (Note 1) 50
(IC = 500 mAdc, VCE = 10 Vdc) (Note 1) 40
Collector Emitter Saturation Voltage (Note 1) VCE(sat) Vdc
(IC = 150 mAdc, IB = 15 mAdc) 0.3
(IC = 500 mAdc, IB = 50 mAdc) 1.0
BaseEmitter Saturation Voltage (Note 1) VBE(sat) Vdc
(IC = 150 mAdc, IB = 15 mAdc) 0.6 1.2
(IC = 500 mAdc, IB = 50 mAdc) 2.0
SMALLSIGNAL CHARACTERISTICS
Current Gain Bandwidth Product (Note 2) fT MHz
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)C 300
Output Capacitance Cobo pF
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 8.0
Input Capacitance Cibo pF
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 25
Input Impedance hie kfi
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2.0 8.0
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 0.25 1.25
Voltage Feedback Ratio hre X 10 4
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 8.0
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 4.0
SmallSignal Current Gain hfe
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 50 300
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 75 375
Output Admittance hoe Mhos
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 5.0 35
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 25 200
Collector Base Time Constant rbCc ps
(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) 150
Noise Figure NF dB
(IC = 100 Adc, VCE = 10 Vdc, RS = 1.0 kfi, f = 1.0 kHz) 4.0
1. Pulse Test: Pulse Width S 300 s, Duty Cycle S 2.0%.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.

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 P2N2222A

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)

Characteristic Symbol Min Max Unit
SWITCHING CHARACTERISTICS
Delay Time (VCC = 30 Vdc, VBE(off) = 2.0 Vdc, td 10 ns
Rise Time IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1) tr 25 ns
Storage Time (VCC = 30 Vdc, IC = 150 mAdc, ts 225 ns
Fall Time IB1 = IB2 = 15 mAdc) (Figure 2) tf 60 ns

SWITCHING TIME EQUIVALENT TEST CIRCUITS

+ 30 V + 30 V
1.0 to 100 s, 1.0 to 100 s, 200
200
+16 V DUTY CYCLE 2.0%
+16 V DUTY CYCLE 2.0%

0 0
-2V 1 kfi CS* < 10 pF -14 V 1k CS* < 10 pF
< 2 ns < 20 ns
1N914

Scope rise time < 4 ns -4V

*Total shunt capacitance of test jig,
connectors, and oscilloscope.
Figure 1. TurnOn Time Figure 2. TurnOff Time

1000
700
500 TJ = 125C
300
hFE , DC CURRENT GAIN

200
25C
100
70
-55C
50
30
VCE = 1.0 V
20 VCE = 10 V

10
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700 1.0 k
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain

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 P2N2222A

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

1.0
TJ = 25C
0.8

0.6 IC = 1.0 mA 10 mA 150 mA 500 mA

0.4

0.2

0
0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50
IB, BASE CURRENT (mA)
Figure 4. Collector Saturation Region

200 500
IC/IB = 10 VCC = 30 V
300 IC/IB = 10
100 TJ = 25C
200 ts = ts - 1/8 tf IB1 = IB2
70
tr @ VCC = 30 V TJ = 25C
50
td @ VEB(off) = 2.0 V
100
td @ VEB(off) = 0
t, TIME (ns)

30
t, TIME (ns)

70
20 50 tf

30
10
7.0 20
5.0
10
3.0 7.0
2.0 5.0
5.0 7.0 10 20 30 50 70 100 200 300 500 5.0 7.0 10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 5. TurnOn Time Figure 6. TurnOff Time

10 10
RS = OPTIMUM f = 1.0 kHz
IC = 1.0 mA, RS = 150 fi SOURCE
8.0 RESISTANCE 8.0
500 A, RS = 200 fi IC = 50 A
NF, NOISE FIGURE (dB)

NF, NOISE FIGURE (dB)

100 A, RS = 2.0 kfi 100 A

6.0 50 A, RS = 4.0 kfi 6.0 500 A
1.0 mA

4.0 4.0

2.0 2.0

0 0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (OHMS)

Figure 7. Frequency Effects Figure 8. Source Resistance Effects

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 P2N2222A

f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)

30 500
VCE = 20 V
20 TJ = 25C
300
Ceb
CAPACITANCE (pF)

10 200

7.0

5.0
100
Ccb
3.0 70

2.0 50
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)

Figure 9. Capacitances Figure 10. CurrentGain Bandwidth Product

1.0 +0.5
TJ = 25C
0.8 0 R0VC for VCE(sat)
COEFFICIENT (mV/C)
V, VOLTAGE (VOLTS)

VBE(sat) @ IC/IB = 10
1.0 V - 0.5
0.6
VBE(on) @ VCE = 10 V - 1.0
0.4
- 1.5

0.2
- 2.0 R0VB for VBE
VCE(sat) @ IC/IB = 10
0 - 2.5
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 11. On Voltages Figure 12. Temperature Coefficients

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 P2N2222A

PACKAGE DIMENSIONS

TO92 (TO226)
CASE 2911
ISSUE AM

NOTES:
A B STRAIGHT LEAD 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
BULK PACK 2. CONTROLLING DIMENSION: INCH.
R 3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
P BEYOND DIMENSION K MINIMUM.
L
SEATING INCHES MILLIMETERS
PLANE K DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
X X D G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
G J 0.015 0.020 0.39 0.50
H J K 0.500 --- 12.70 ---
L 0.250 --- 6.35 ---
V C N 0.080 0.105 2.04 2.66
P --- 0.100 --- 2.54
SECTION XX R 0.115 --- 2.93 ---
1
N V 0.135 --- 3.43 ---

NOTES:
A B BENT LEAD
R 1. DIMENSIONING AND TOLERANCING PER
TAPE & REEL ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
AMMO PACK 3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
P AND BEYOND DIMENSION K MINIMUM.
T
SEATING MILLIMETERS
PLANE K
DIM MIN MAX
A 4.45 5.20
B 4.32 5.33
C 3.18 4.19
D 0.40 0.54
X X D
G 2.40 2.80
G J 0.39 0.50
J K 12.70 ---
N 2.04 2.66
V P 1.50 4.00
C
R 2.93 ---
SECTION XX V 3.43 ---
1
N
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER

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