Vous êtes sur la page 1sur 3
Qi. B a 200 89 > oo aorr7 9 © BACAB Orn 1. a sDpApry el No of transistors =20 PMOS Analog & Digital VEST Design (EEE C443) 17-02-2013 Answerkex Y Y= ABTBCHAC =AB+C(AtB) ° ° 1 ° i = 4 @2 @ ic faster than © because the NAND hao the same parasitic alo bur Lower bogicas effort than the NOR. For @) 26, Bat, Pa lt2=3, G= Axiz 43 F= G@BH=8,N 4 =2, D=aNF tps 2x84 B= 86 fr ® H=6, B=1, Palta=3, €=1x5k- BH GBH=10 p=NF Mp p=2xl0%3=93 Cin= Covt x 5 cigs 6cxSB'_ 66458" L926 pl 3 y= Sen 8 = abe 10 : as Vpp. Vpp —4E on Ley, p20 do, anc l FFT vob ane ZRIn pene ; fel =ancR+2RE 22 tat =3NCR+ aR [ n(n+t) -"| a = 3nCR+RCO nen) = (ran )RE —_—_—_—————, @4- v2 2Vout + Vrowp —Vop + KeVre,2 1+KR For symmetric inverter Ke=l ? Vron= | Vr] = Vive 2Vout — Vod - O a2 NMos is in saturation, Pmos is in dinear region 50. (vie-Vro,n) = Ke (20 —Yop—Yro.P) (Vouk von) Zz a = (Vout vp)’ | Putting Kp= Kn and Vrop=-Vren and solving the quadratic equation for Vout S Vout = VitVrt\) avivp+Veb-2Vpp Vint Vr) putting in (1) ‘ AVE-3Vp0 +4VpDVT _ 4 (a¥op+2Vr) 3(2vr-Vpp) 8 Vin = Voot Vrop+Kr (2Vodt +Vr0,0) a eee For symmetric inverter Vis Vep+2Vat ____@) 2 NMOS -Jinear, PMOS - soduration . an 2(Vin- Viro,m) Vow —Vest ]= Ke {von -Vpb -VroP] kn=KR_, Vro,p=—Vro.n Vouk = Vin — : tt Von t \ 2Vpp (Vin+ Vro,n) — 4ViHVro,n-VoD. ViL= Paceting lb @ a 2 Vins SVpp +4 Vroo —12Vep Vrain 8(Vpp- 2Vr0,n VS TT 5Vpp -2VT0,N for cmos inverter , VoH=Vod, VoL=° Vint ViL= V>> NML= Vi- Vor = Vie Vi NMu = Vou—Vin = Vpp-Vid = Vin Vie Viq SV

Vous aimerez peut-être aussi