TIP31, TIP31A, TIP31B,

TIP31C, (NPN), TIP32,

TIP32A, TIP32B, TIP32C,
(PNP)

Complementary Silicon
Plastic Power Transistors http://onsemi.com

Designed for use in general purpose amplifier and switching 3 AMPERE

applications.
Features POWER TRANSISTORS
Collector-Emitter Saturation Voltage - COMPLEMENTARY SILICON
VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc 40-60-80-100 VOLTS,
Collector-Emitter Sustaining Voltage - 40 WATTS
VCEO(sus) = 40 Vdc (Min) - TIP31, TIP32
= 60 Vdc (Min) - TIP31A, TIP32A
= 80 Vdc (Min) - TIP31B, TIP32B
MARKING
= 100 Vdc (Min) - TIP31C, TIP32C DIAGRAM
High Current Gain - Bandwidth Product
fT = 3.0 MHz (Min) @ IC = 500 mAdc 4
Compact TO-220 AB Package
Pb-Free Packages are Available*
TO-220AB
CASE 221A TIP3xxG

MAXIMUM RATINGS AYWW
STYLE 1

Rating Symbol Value Unit 1
2
Collector - Emitter Voltage TIP31, TIP32 VCEO 40 Vdc 3

TIP31A, TIP32A 60

TIP31B, TIP32B 80
TIP31C, TIP32C 100

Collector-Base Voltage TIP31, TIP32 VCB 40 Vdc TIP3xx = Device Code

TIP31A, TIP32A 60 xx = 1, 1A, 1B, 1C,
TIP31B, TIP32B 80 2, 2A, 2B, 2C,

TIP31C, TIP32C 100 A = Assembly Location
Y = Year

Emitter-Base Voltage VEB 5.0 Vdc
WW = Work Week
Collector Current Continuous IC 3.0 Adc

G Pb-Free Package
Peak 5.0

Base Current IB 1.0 Adc

Total Power Dissipation PD ORDERING INFORMATION

@ TC = 25C 40 W See detailed ordering and shipping information in the package
Derate above 25C 0.32 W/C dimensions section on page 2 of this data sheet.

Total Power Dissipation PD

@ TA = 25C 2.0 W
Derate above 25C 0.016

W/C
Unclamped Inductive Load Energy (Note 1) E 32 mJ

Operating and Storage Junction TJ, Tstg 65 to C

Temperature Range +150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. IC = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 W
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

 Semiconductor Components Industries, LLC, 2007 1 Publication Order Number:

November, 2007 - Rev. 11 TIP31A/D
 TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction-to-Ambient RqJA 62.5 C/W

Thermal Resistance, Junction-to-Case RqJC 3.125 C/W

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector-Emitter Sustaining Voltage (Note 2) TIP31, TIP32 VCEO(sus) 40 - Vdc
(IC = 30 mAdc, IB = 0) TIP31A, TIP32A 60 -

TIP31B, TIP32B 80 -

TIP31C, TIP32C 100 -
Collector Cutoff Current (VCE = 30 Vdc, IB = 0) TIP31, TIP32, TIP31A, TIP32A ICEO - 0.3 mAdc

Collector Cutoff Current (VCE = 60 Vdc, IB = 0) TIP31B, TIP31C, TIP32B, TIP32C - 0.3

Collector Cutoff Current

(VCE = 40 Vdc, VEB = 0)
(VCE = 60 Vdc, VEB = 0)




TIP31, TIP32
TIP31A, TIP32A
ICES
- 200
mAdc

- 200
(VCE = 80 Vdc, VEB = 0) TIP31B, TIP32B - 200

(VCE = 100 Vdc, VEB = 0) TIP31C, TIP32C - 200

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO - 1.0 mAdc

ON CHARACTERISTICS (Note 2)

DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc) hFE 25 - -
DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc) 10 50

Collector-Emitter Saturation Voltage (IC = 3.0 Adc, IB = 375 mAdc)

VCE(sat) - 1.2 Vdc

Base-Emitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc) VBE(on) - 1.8 Vdc

DYNAMIC CHARACTERISTICS

Current-Gain - Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) fT 3.0 - MHz
Small-Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe 20 - -
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

ORDERING INFORMATION
Device Package Shipping
TIP31 TO-220 50 Units / Rail
TIP31G TO-220 50 Units / Rail
(Pb-Free)
TIP31A TO-220 50 Units / Rail
TIP31AG TO-220 50 Units / Rail
(Pb-Free)
TIP31B TO-220 50 Units / Rail
TIP31BG TO-220 50 Units / Rail
(Pb-Free)
TIP31C TO-220 50 Units / Rail
TIP31CG TO-220 50 Units / Rail
(Pb-Free)
TIP32 TO-220 50 Units / Rail
TIP32G TO-220 50 Units / Rail
(Pb-Free)
TIP32A TO-220 50 Units / Rail
TIP32AG TO-220 50 Units / Rail
(Pb-Free)
TIP32B TO-220 50 Units / Rail
TIP32BG TO-220 50 Units / Rail
(Pb-Free)
TIP32C TO-220 50 Units / Rail
TIP32CG TO-220 50 Units / Rail
(Pb-Free)

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 TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)

TC TA
40 4.0

PD, POWER DISSIPATION (WATTS)

TC
30 3.0

20 2.0

TA
10 1.0

0 0
0 20 40 60 80 100 120 140 160

T, TEMPERATURE (C)

Figure 1. Power Derating

TURN-ON PULSE VCC

APPROX 2.0
RC IC/IB = 10
+11 V
1.0 TJ = 25C
Vin SCOPE 0.7
Vin 0 tr @ VCC = 30 V
RB 0.5
VEB(off)
t, TIME (ms)

t1
0.3 tr @ VCC = 10 V
t3 Cjd << Ceb
APPROX
+11 V t1 7.0 ns -4.0 V
0.1
100 < t2 < 500 ms
Vin t3 < 15 ns 0.07 td @ VEB(off) = 2.0 V
0.05
0.03
t2 DUTY CYCLE 2.0%
0.02
TURN-OFF PULSE APPROX -9.0 V 0.03 0.05 0.1 0.3 0.5 1.0 3.0

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS. IC, COLLECTOR CURRENT (AMP)

Figure 2. Switching Time Equivalent Circuit Figure 3. Turn-On Time

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 TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1.0
0.7
D = 0.5
0.5

0.3
0.2
0.2
0.1
0.1 P(pk)
0.05 ZqJC(t) = r(t) RqJC
0.07
RqJC(t) = 3.125C/W MAX
0.05 D CURVES APPLY FOR POWER
0.02
0.03 PULSE TRAIN SHOWN t1
READ TIME AT t1 t2
0.02
0.01 TJ(pk) - TC = P(pk) ZqJC(t)
SINGLE PULSE DUTY CYCLE, D = t1/t2
0.01
0.01 0.02 0.05 1.0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k
t, TIME (ms)

Figure 4. Thermal Response

10 There are two limitations on the power handling ability of

a transistor: average junction temperature and second
5.0
IC, COLLECTOR CURRENT (AMP)

breakdown. Safe operating area curves indicate IC - VCE

100ms
5.0ms limits of the transistor that must be observed for reliable
2.0 operation; i.e., the transistor must not be subjected to greater
1.0ms dissipation than the curves indicate.
SECONDARY BREAKDOWN
1.0 The data of Figure 5 is based on T J(pk) = 150C; TC is
LIMITED @ TJ 150C
THERMAL LIMIT @ TC = 25C variable depending on conditions. Second breakdown pulse
0.5
(SINGLE PULSE) limits are valid for duty cycles to 10% provided T J(pk)
BONDING WIRE LIMIT v 150C. T J(pk) may be calculated from the data in
0.2 CURVES APPLY TIP31A, TIP32A Figure 4. At high case temperatures, thermal limitations will
BELOW RATED VCEO TIP31B, TIP32B
reduce the power that can be handled to values less than the
TIP31C, TIP32C
0.1 limitations imposed by second breakdown.
5.0 10 20 50 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 5. Active Region Safe Operating Area

3.0 300
2.0 IB1 = IB2
TJ = +25C
ts IC/IB = 10
ts = ts - 1/8 tf 200
1.0 tf @ VCC = 30 V TJ = 25C
CAPACITANCE (pF)

0.7
0.5
t, TIME (s)

0.3 tf @ VCC = 10 V 100

Ceb
0.2
70
0.1
0.07 50 Ccb
0.05
0.03 30
0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 40
IC, COLLECTOR CURRENT (AMP) VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Turn-Off Time Figure 7. Capacitance

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 TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)

500 2.0

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

300 TJ = 150C VCE = 2.0 V TJ = 25C
1.6
hFE, DC CURRENT GAIN

25C
100
1.2 IC = 0.3 A 1.0 A 3.0 A
70 -55C
50

30 0.8

0.4
10
7.0
5.0 0
0.03 0.05 0.07 0.1 0.3 0.5 0.7 1.0 3.0 1.0 2.0 5.0 10 20 50 100 200 500 1000
IC, COLLECTOR CURRENT (AMP) IB, BASE CURRENT (mA)

Figure 8. DC Current Gain Figure 9. Collector Saturation Region

1.4 +2.5

V, TEMPERATURE COEFFICIENTS (mV/ C)

TJ = 25C +2.0 *APPLIES FOR IC/IB hFE/2
1.2
+1.5 TJ = -65C TO +150C
1.0
V, VOLTAGE (VOLTS)

+1.0

0.8 +0.5 *qVC FOR VCE(sat)

VBE(sat) @ IC/IB = 10 0
0.6 -0.5
VBE @ VCE = 2.0 V
0.4 -1.0
-1.5 qVB FOR VBE
0.2 VCE(sat) @ IC/IB = 10
-2.0
0 -2.5
0.003 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 0.003 0.005 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMP)

Figure 10. On Voltages Figure 11. Temperature Coefficients

R BE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS)

103 107
VCE = 30 V VCE = 30 V
102 IC = 10 x ICES
IC, COLLECTOR CURRENT (A)

106

TJ = 150C
101
IC ICES
105
100 100C

104 IC = 2 x ICES
10-1 REVERSE FORWARD

10-2 25C 103 (TYPICAL ICES VALUES

OBTAINED FROM FIGURE 12)
ICES
10-3 102
-0.4 -0.3 -0.2 -0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6 20 40 60 80 100 120 140 160
VBE, BASE-EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (C)

Figure 12. Collector Cut-Off Region Figure 13. Effects of Base-Emitter Resistance

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 TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)

PACKAGE DIMENSIONS

TO-220
CASE 221A-09
ISSUE AE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
-T- PLANE 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
B F C BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
T S
INCHES MILLIMETERS
4 DIM MIN MAX MIN MAX
A 0.570 0.620 14.48 15.75
Q A B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
1 2 3 U D 0.025 0.035 0.64 0.88
F 0.142 0.161 3.61 4.09
H G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93
K J 0.014 0.025 0.36 0.64
Z K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
L R Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
V J S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
G U 0.000 0.050 0.00 1.27
V 0.045 --- 1.15 ---
D Z --- 0.080 --- 2.04
N

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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