Design of High-eciency Inductive-Coupled
Wireless Power Transfer System with Class-DE
Transmitter and Class-E Rectifier
Kazuhide Inoue1 , Tomoharu Nagashima1 , Xiuqin Wei2 , and Hiroo Sekiya1
1
Graduate School of Advanced Integration Science, Chiba University, Chiba, 263-8522, Japan
2
Department of Electronics Engineering and Computer Science, Fukuoka University, Fukuoka 814-0180, Japan
Email: k.inoue@chiba-u.jp
AbstractThis paper proposes an inductive coupled wireless
power transfer (WPT) system with class-DE transmitter and
class-E rectifier along with numerical design procedure. The
proposed WPT system can achieve high power-transfer eciency
at high-frequencies because both the transmitter and the rectifier
satisfy the class-E ZVS/ZDS conditions. By using numerical
design procedure, it is possible to design the WPT system
without analysis of the circuit and consideration of the impedance
matching. By carrying out the circuit experiment, the validity
of the design procedure and eectiveness of the proposed WPT
system were confirmed. The laboratory measurement showed the
90.4 % overall power-transfer eciency with 100 W output at
500 kHz operating frequency.
KeywordsClass-DE-E dc/dc converter, wireless power transfer,
inductive coupling, Class-E ZVS/ZDS conditions, power-transfer
eciency.
I. Introduction
Recently, there has been increasing interest in wireless
power transfer (WPT) system because it enables to use wide
varieties of applications. For example, wireless power charg-
ing of electric vehicle (EV), various mobile applications,
radio-frequency identification (RFID), and so on. As seen from
wireless-mobile-phone example, the impact of wireless is
very strong to our life. Inductive coupled WPT system is one
of the commonly used wireless powering method [1]-[3]. For
achieving high power-transfer eciency of WPT systems, it is
important to design high power-transfer eciency transmitter
and rectifier. For power-transfer eciency enhancement of
transmitter and rectifier, it is a good strategy that the class-E
switching technique [4], [5] is applied to a transmitter. By
applying the class-E zero-voltage switching and zero-derivative
switching (ZVS/ZDS) conditions, the class-E transmitter re-
alizes high power-transfer eciency at high frequencies as
well as the WPT system [1], [2]. It seems, however, that
the power-transfer eciency enhancement of the rectifier has
not been considered yet. It is also important to consider the
power-transfer eciency of the rectifier for enhancing the
overall power-transfer eciency of WPT systems.
The class-DE-E dc-dc converter [6], which is composed
of the class-DE inverter [7]-[9] and the class-E rectifier [10]
is one of the high-eciency resonant converters. Both the
class-DE inverter and the class-E rectifier achieve the class-E
ZVS/ZDS conditions. Additionally, the switch-voltage stress
of class-DE inverter is the same as the input voltage, which is
978-1-4799-0224-8/13/$31.00 2013 IEEE 613
an advantage compared with the class-E inverter. In our idea, a
WPT system is regarded as a inverter and a rectifier connected
in serial through the wireless coupling part. If the coupling part
is added to the class-DE-E dc-dc converter, we can construct
high-frequency high-eciency WPT system.
It is dicult to design the class-E switching circuits
because the class-E switching conditions are strict, multiple,
and complicated conditions. In addition, it is also not easy
to design the class-E WPT system because the impedance
matching between an inverter and a wireless coupling part, and
a wireless coupling part and a rectifier should be considered.
For example, the design of inverter and rectifier are separated
and trial and error confirmations of the output power were
necessary in the design procedure [1]-[3]. On the other hand,
the numerical design procedure for the class-E switching
circuit was proposed in [11]. This procedure requires only
circuit topology and other processes of the design are carried
out with the aid of a computer. By using this design procedure,
class-E switching resonant converters can be designed as one
circuit without separation into the inverter and rectifier parts.
Therefore, it is expected that the WPT systems applying the
class-E switching technique can be designed with few eorts
by using of the design procedure in [11].
This paper presents an inductive coupled WPT system
with the class-DE transmitter and the class-E rectifier. The
proposed WPT system achieves high power-transfer eciency
at high-frequencies because both the transmitter and the rec-
tifier satisfy the class-E ZVS/ZDS conditions. The inductive
coupling is modeled as transformer with a proper coupling
coecient and equivalent series resistances in both primary
and secondary part. The design procedure presented in [11] is
applied to the design of the proposed WPT system. By using
the numerical design procedure, the component values for sat-
isfying the class-E ZVS/ZDS conditions and specified output
power are obtained numerically without any analyses of the
WPT system and considerations of the impedance matching.
The experimental measurements agreed with the numerical
predictions quantitatively, which showed the eectiveness of
the proposed WPT system as well as the validity of the design
procedure. In laboratory measurements, the 90.4 % overall
power-transfer eciency was achieved with 100 W output
power at 500 kHz operating frequency.
 Class-DE transmitter
2D 2(1-D)2D 2(1-D)

Dr1
is2 vs2 ics2
deadtime deadtime
ON OFF OFF OFF
S2 CS2 Transformer 0 /2 3/2 2
Class-E rectifier 2D 2(1-D)2D 2(1-D)

Dr2
Dr2 M deadtime deadtime
Lo Co CL OFF OFF ON OFF
VDD is1 vs1 0 /2 3/2 2
i1
ics1 v L1 L2 i2 vL
S1 CS1 CD Cf VDD
Dr1

vs1

i2
0
/2 3/2 2

(a)
0 /2 3/2 2
ics2
is2
vs2
VDD
S2 CS2

vD
M

vs2
Dr2
rS2 Lo rL0 Co CL rLf
VDD is1 vs1 i2
i1 v rL1 rL2 vL
ics1 0 /2 3/2 2 0 /2 3/2 2
S1 CS1 CD Cf
L1 L2
Dr1 rS1 rD

i1

vf
(b)
0
/2 3/2 2

Fig. 1. Proposed WPT system. (a) System overview. (b) Equivalent circuit.
0 /2 3/2 2
(a) (b)
II. Proposed WPT System Fig. 2. Nominal waveform of proposed WPT system. (a) Waveform of
transmitter part. (b) Waveform of rectifier part.
Figure 1(a) shows a topology of the proposed WPT system.
This system consists of class-DE transmitter, inductive coils,
and class-E rectifier. Inductive coupling part can be modeled
as loosely
coupled transformer as shown in Fig. 1(a), where and

M = k L1 L2 is the mutual inductance between the primary dvS 2 () 
vS 2 () = 0,  = 0. (2)
coil L1 and the secondary coil L2 , and k is the coupling coef-
ficient of the transformer. By satisfying the class-E ZVS/ZDS
conditions in the class-DE transmitter and the class-E rectifier,
the proposed WPT system can achieve high power-transfer
eciency at high frequencies.
A. Class-DE Transmitter
The class-DE transmitter consists of input voltage source
VDD , two MOSFETs S 1 and S 2 as switching devices, two
capacitors CS 1 and CS 2 shunting each switch, series-resonant
circuit L0 C0 . Figure 2(a) shows example waveforms of the
class-DE transmitter at 25% switch on duty ratio. The switches
S 1 and S 2 are driven by the driving patterns of Dr1 and
Dr2 , respectively. The driving pattern generates a dead time
during the period when one switch has turned o before the
other switch has turned on. Because of vS 1 + vS 2 = VDD , the
electric charge moves from one shunt capacitance to the other
one during the dead time. The midpoint voltage between two
switches, namely vS 1 , becomes VDD or zero and the derivation
of the voltage is also zero at the end of the dead time, allowing
the class-E ZVS/ZDS conditions, namely,
d =
As shown in Fig. 2(a), maximum voltages across the
switches S 1 and S 2 are the same as the input voltage VDD . This
is an advantage of the class-D type of transmitter compared
with the class-E transmitter. Therefore, the class-DE transmit-
ter has the both merits of the class-D and class-E transmitters,
which are low switch voltage stress and high power-transfer
eciency at high frequencies, respectively.
B. Class-E Rectifier
The class-E rectifier consists of diode D as a switching
device, shunt capacitance C D , low pass filter L f C f , and
load resistance R. Additionally, C L is necessary for considering
the L2 C L network as current source because the Class-E
rectifier needs the current-source input. Figure 2(b) shows
waveform of Class-E rectifier. During the diode D is in the
o-state, the current iCD = C D dvD /d flows through the shunt
capacitance C D , which generates diode voltage vD . Because the
diode current iD is negligible, power loss in the diode D is,
however, approximately zero during diode o-state. When the

dvS 1 ()  diode voltage decreases to the threshold voltage, diode D turns
vS 1 (2) = 0,  = 0, (1)
d =2 on. During diode on-state, power loss in the diode D can keep

614
 TABLE I. Switching pattern in class-de transmitter
low because the voltage across the diode D is equal to the
threshold voltage. At the turn-o transition of the diode, both Intervals Dr1 Dr2
the diode voltage vD and the derivation of it dvD /d are nearly
zero as shown in Fig. 2(b). This is also the class-E ZVS/ZDS 0</2 ON OFF
switching, which enables the class-E rectifier to operate with /2< OFF OFF
high power-transfer eciency at high frequencies. <3/2 OFF ON
3 / 2 < 2 OFF OFF
In the previous design of the WPT system using the class-E
switching transmitters, the transmitter part and the rectifier one
were designed separately. For achieving the class-E ZVS/ZDS
conditions, the impedance matching between transmitter and a) = 2 f : The angular
frequency
coupling coil, and coupling coil and rectifier have to be con- b) 0 = 2 f0 = 1/ LoCo : The resonant angular fre-
sidered. Therefore, complicated analysis of the WPT system quency.
is necessary for obtaining component values [1] - [3]. In this c) A = ( f0 / f )2 = (0 /)2 : The ratio of the resonant
paper, numerical design method proposed in [11] is applied frequency to the operating(switching) frequency
for the design of WPT system. By using this method, it is d) B = Co /C s : The ratio of the capacitance of the res-
possible to obtain component values with high accuracy with- onant capacitor to the shunt capacitor of the switch,
out any analyses. Additionally, it is also possible to design the where, C s = CS 1 + CS 2
WPT system as one circuit without divisions into transmitter, e) Z = L0 /L1 : The ratio of the inductance of the resonant
coupling coil, and rectifier and without considerations of the inductor to the self inductance of the primary coil.
impedance matching. f) W = L0 /L2 : The ratio of the inductance of the reso-
nant inductor to the self inductance of the secondary
III. Design procedure coil.
g) J = Co /C D : The ratio of the capacitance of the
The design procedure in [11] requires only the circuit topol- resonant capacitor to the shunt capacitor of the diode
ogy and the circuit simulator. In this paper, the circuit topology D
is expressed by the dierential equations and waveforms of h) K = Lo /R: The parameter like loaded quality factor
the proposed WPT system is obtained numerically from the in the proposed WPT system.
dierential equations by applying the Runge-Kutta method.

A. Assumptions C. Circuit Equations

The circuit operation in the range of 0 < 2 is
By using the above parameters and the equivalent circuit
considered in this paper. For formulating the circuit equations
topology of the proposed WPT system in Fig. 1(b), the circuit
of the proposed WPT system, the following assumptions are
equations are formulated as
given.



dvS 1 VDD 1 1
(1) The switches S 1 , S 2 , and diode D, have zero switch-
= ABKR( ( + )vS 1 i1 )


d R R R
ing time, infinite o-resistance, and on-resistance.


S2 S1 S2




The on-resistances of the switches S j in the transmit-
di1 Z(vS 1 v (rL0 + rL1 )i1 ) k ZW(rL2 i2 + vD + vL )


=
ter and the diode D of the rectifier are expressed as rS j

d KR(1 k2 + Z)
and rD , respectively. In this paper, we use the same




dv
kind of the MOSFETs for the switches. Therefore,

= AKRi1
rS 1 = rS 2 = rS is assumed.

d



(2) The shunt capacitance of each switching device,




di2 k ZW(vS 1 v (rL0 + rL1 )i1 ) W(1 + Z)(rL2 i2 + vD + vL )
namely CS 1 , CS 2 , and C D includes switch device
=
capacitances.

d KR(1 k2 + Z)

(3) All the passive elements including the switch

dvL 1


= i2
on-resistances work as linear elements.

d C L
(4) All the inductances and transformers in the circuit





have the equivalent series resistances (ESRs). We
dvD vD


= AK JR(i2 if )
define rL0 and rL f as ESRs of inductor L0 and

d R D
L f . Similarly, rL1 and rL2 as ESRs of primary and




di f 1
secondary side of transformer, respectively.

= (vD v f rL f i f )


d L
(5) The switch-on duty ratio is 0.25 and the switching


f
pattern is given in Table I.



dv f 1 vf


= (i f ).
According to the above assumptions, the equivalent circuit

d C f R
of the proposed WPT system is given as shown in Fig. 1(b).
(3)
B. Parameters
In (3), RS 1 , RS 2 , RD mean the equivalent resistance of the
For expressing the circuit equations, the following dimen- switches S 1 , S 2 and the diode D, respectively. From, Assump-
sionless parameters are defined. tion 2, the resistance of the switches is

615
 Class-DE transmitter Transformer Class-E rectifier
{
rS , if S j is in on state,
RS j = (4)
, if S j is in o state.

Similarly, the resistance of the diode is

{
rD , for vD vth ,
RD = (5)
, for vD > vth ,
where vth is the threshold voltage of the diode D.

D. Constraint conditions Fig. 3. Overview of implemented system.

For achieving high power-transfer eciency, the class-E
ZVS/ZDS conditions of the bottom switch in (1) are consid-
ered. Because of the symmetry operation, the conditions of
the above switch in (2) are approximately satisfied when the
conditions in (1) are achieved. In addition, the output power
should satisfy the specified output power Pos , namely, where = [A, B, Z, W, J, K, VDD , R, L f , C f , rS , rD , k, D, rLo , rL1 ,
VO2 rL2 , rL f ]T R18 . We assume that (3) has a solution x() =
Pos = , (6) (, x0 , ) = [1 , 2 , . . . , 8 ]T defined on < <
R with every initial value condition x0 . The class-E ZVS/ZDS
where VO is the output voltage. If the waveforms from (3) in conditions and output power are defined on the steady state.
the steady state, the voltage v f is a direct voltage, which is The steady-state conditions of waveforms can be given as
same as the output voltage VO because of low-pass filter L f
-C f . However, v f has a little ac component in the strict sense. ( + 2, x0 , ) = (, x0 , ) . (11)
In this paper, the output voltage VO is calculated as Therefore, the transient conditions between = 0 and = 2
2 are
1
VO = v f ()d. (7)
2 0 (2, x0 , ) (0, x0 , ) = 0 R8 . (12)

E. Power-transfer eciency In the nominal operation, the switches of the transmitter

achieve Class-E switching conditions in (1) and the specified
The numerical waveforms express power losses on parasitic output power condition in (6) should be achieved simultane-
resistors since the circuit equations (3) include switch on ously. These conditions are given as
resistance and ESRs of the inductors and transformers. In the 1 (2, x0, ) = 0,
numerical calculations, the continuities of the voltages and d1 (, x0 , ) 
the currents are ensured though the switching devices have d =2 = 0, (13)
zero switching times from assumption 2. As a result, the 2
R ( 0 8 (, x0 , )d) 4 Pos =
1 2 2
power-transfer eciency can be calculated from the input 0.
and output power, that is From above considerations, the design of the proposed WPT
PO VO2 system boils down to the solution derivations of the algebraic
= = , (8) equations in (12) and (13). We have 11 algebraic equations
PI RVDD II though there are 18 unknown parameters. Therefore, we set
where II is the average input currents, namely, the 11 parameters as unknown parameters for the design. In
2 this paper, x0 , A, B, and J are set as unknown parameters.
II = {iS 2 () + ICs2 ()}d The other parameters are given as the design specifications.
By applying the Newtons method for solving the algebraic
2 {
0
}
vS 2 () dvS 2 () equations, we can derive the unknown parameters A, B, and J.
= + CS 2 d. (9) The detailed algorithm of the Newtons method is described in
0 rS 2 d
[11]. For solving the algebraic equations F(x0 , ) = 0 by using
In this paper, we use a trapezoidal rule for the integration in Newtons method, the initial values for iterative calculations
(6) and (9). are important. First, by using certain values of the variations
x00 and 0 , the values of F(x00 , 0 ) are obtained as F(x00 , 0 ) = a.
When we define x() = [x1 , x2 , . . . , x8 ]T = Second, the algebraic equations F(x10 , 1 ) = (1)a are solved
[vS 1 , i1 , v, i2 , vL , vD , i f , v f ] T
R , (3) can be rewritten
8 by using the Newtons method with x00 and 0 as the initial
as values, where 1/N 1, and N is integer value. The
algebraic equations F(xn0 , n ) = (1 n)a are solved by using
the Newtons method with the initial values of xn1 0 and n1 .
dx After N iterations, we can obtain the solution of the algebraic
= f (, x, ), (10) equations F(x0N , N ) = (1 N)a = 0.
d
616
 Dr1 TABLE II. Design values of proposed system

10
Calculated Measured Dierence
0 /2 3/2 2
L1 27.27 H 27.27 H 0.0 %
Dr2

10
L2 27.27 H 27.27 H 0.0 %
0 /2 3/2 2 CS 1 1.73nF 1.74nF 0.7 %
250
vs1

CS 2 1.73nF 1.73nF 0.0 %

0 /2 3/2 2 Lo 36.0H 35.1H -2.5 %
250
Co 1.91nF 1.90 nF -0.5 %
vs2

CD 2.01 nF 1.99 nF -1.0 %

0 /2 3/2 2
5 Lf 300.0 H 298.0 H -0.7 %
i1

0 /2 3/2 2 Cf 470 nF 470 nF 0.0 %

-5
5 R 100.0 100.0 0.0 %
3/2 2
i2

0 /2 rL1 0.37 0.37 0.0 %

-5
400 rL2 0.39 0.39 0.0 %
vD

rLo 0.4 0.4 0.0 %

0 /2 3/2 2
100
rL f 0.019 0.019 0.0 %
vf

f 500.0 kHz 500.0 kHz 0.0 %

0 /2 3/2 2
(a) (b) Dr1 0.25 0.25 0.0 %
Dr2 0.25 0.25 0.0 %
Fig. 4. Calculated and experimental waveforms of proposed system(a) Cal-
culated results. (b) Experimental results (Vertical:Dr1 :10V/div, Dr2 :10V/div, VDD 250.0 V 250.0 V 0.0 %
vS 1 :200V/div, vS 2 :200V/div, i1 :5A/div, i2 :5A/div, vD :200V/div, v f :100V/div,
Horizontal:400ns/div). VO 100.0 V 100.1 V 0.1 %
PO 100.0 W 100.2 W 0.2 %
IV. Circuit Experiment 87.3 % 90.4 % 3.5 %
A design example of the proposed WPT system and
experiment results are shown in this section. The proposed
WPT system was designed by following steps. L2 , namely, Ll1 and Ll2 are calculated 13.77H, respectively.
The resonant inductance includes Ll1 , in addition, by using
i) The design specifications were given as follows: f = L0 , resonant inductance values can be adjustable parameter
500 kHz, VDD = 250 V, PO = 100 W, R = 100 , K = 1.15, for achieving the circuit-design conditions.
and distance between the primary coil and secondary one d
= 2 mm. C L = 7.2 nF was selected. By considering 500kHz iii) By solving the algebraic equations with the numerical
operating frequency, the low-pass filter were designed as L f = algorithm in [11], the design parameters are obtained. From
300 H and C f = 470 nF, which generates direct output current waveforms with the obtained parameters, the maximum voltage
with sucient low ripple. Additionally, IRF740 MOSFETs, across the diode was estimated as 380 V. Therefore, the
whose breakdown voltage is 400 V, were selected as switching MUR460 diode was selected as a rectifier switching device.
devices because of VDD = 250 V. Therefore, rS = 0.55 was Therefore, rD = 1.28 was obtained from MUR460 datasheet.
obtained from the datasheet. rD = 0 is assumed in this step By given this on-resistance value, the component values were
because we could not determine the diode type. recalculated. Finally, the component values were obtained
as given in Table II. Figure. 3 shows the overview of the
ii) Prior to the calculations of the component values, L0 , L f , implemented WPT system.
and the primary and secondary coils were made and measured.
In this paper, air-core-solenoid coils were used as coupling Figure. 4 shows the numerical and experimental waveforms
coils. The specifications of the coupling coils are that the of the system. It is confirmed Fig. 4 that all the switch voltages
diameter is 130 mm and the height 10 mm. For suppressing in this system, namely, vS 1 , vS 2 , and vD satisfy the class-E
the skin eect, Litz wires with 0.1 mm 80 strands were ZVS/ZDS conditions. The measurement results are given in
used as winding wires. The self inductance and the ESRs were Table II. In the experiments, all inductances and capacitances
measured after winding, which are L1 = 27.27 H, L2 = 27.27 were measured by using LCR meter of Agilent 4284A. Input
H, rL1 = 0.37 , and rL2 = 0.39 from Agilent 4284A. voltage and current were measured by the digital multimeter
The coupling coecient of these coils were measured as k = of IWATSU VOAC7523. Output power was measured by the
0.495 at d = 2 mm. Hence, the leakage inductances of L1 and digital multimeter of Agilent 3458A. It is seen from Fig. 4

617
 and Table II that the experimental results agreed with the [11] H. Sekiya, T. Ezawa, and Y. Tanji Design procedure for Class E
numerical ones quantitatively, which showed validity of the switching circuits allowing implicit circuits equations, IEEE Trans.
Circuits Syst., vol. 55, no. 11, pp. 3688-3696, Dec. 2008.
design procedure. The experimental system achieved 90.4 %
overall power-transfer eciency with 100W output power at
500 kHz operating frequency.

V. Conclusion
This paper has been proposed an inductive coupled WPT
system with class-DE transmitter and class-E rectifier along
with its design procedure. The proposed WPT system achieves
high power-transfer eciency at high-frequencies, because
both the transmitter and the rectifier satisfy the Class-E
ZVS/ZDS conditions. The inductive coupling is modeled as
transformer with a proper coupling coecient and equivalent
resistance in both primary and secondary parts. The design
procedure presented in [11] was applied to the design of
the proposed WPT system. By using the numerical design
procedure, the component values for satisfying the Class-E
ZVS/ZDS conditions and specified output power were obtained
numerically without any analysis of the WPT system and
any consideration of the impedance matching. The experi-
mental measurements agreed with the numerical predictions
quantitatively, which showed the eectiveness of the proposed
WPT system as well as validity of the design procedure. In
laboratory measurements, the 90.4 % overall power-transfer
eciency was achieved with 100 W output power at 500 kHz
operating frequency.

VI. Acknowledgments
This research was partially supported by Adaptive and
Seamless Technology transfer Program through targetdriven R
& D of Japan Science and Technology Agency.

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