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Alfa-MOS AFN3400

30V N-Channel
Technology Enhancement Mode MOSFET

General Description Features

AFN3400, N-Channel enhancement mode  30V/4.0A,RDS(ON)=48m@VGS=10V


MOSFET, uses Advanced Trench Technology  30V/3.5A,RDS(ON)=52m@VGS=4.5V
to provide excellent RDS(ON), low gate charge.
 30V/2.8A,RDS(ON)=58m@VGS=2.5V
These devices are particularly suited for low
 Super high density cell design for extremely
voltage power management, and low in-line
low RDS (ON)
power loss are needed in commercial industrial
 SOT-23-3L package design
surface mount applications.

Pin Description ( SOT-23-3L )

Application
 Power Management in Note book
 LED Display
 DC-DC System
 LCD Panel

Pin Define
Pin Symbol Description
1 G Gate
2 S Source
3 D Drain

Ordering Information
Part Ordering No. Part Marking Package Unit Quantity
AFN3400S23RG 00YW SOT-23-3L Tape & Reel 3000 EA
 00 parts code
 Y year code ( 0 ~ 9 )
 W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 )
 AFN3400S23RG : 7 Tape & Reel ; Pb- Free ; Halogen- Free

Alfa-MOS Technology Corp. www.alfa-mos.com


Rev.A Feb. 2011 Page 1
Alfa-MOS AFN3400
30V N-Channel
Technology Enhancement Mode MOSFET

Absolute Maximum Ratings


(TA=25 Unless otherwise noted)
Parameter Symbol Typical Unit
Drain-Source Voltage VDSS 30 V
Gate Source Voltage VGSS 12 V
TA=25 4.0
Continuous Drain Current(TJ=150) ID A
TA=70 3.5
Pulsed Drain Current IDM 20 A
Continuous Source Current(Diode Conduction) IS 1.5 A
TA=25 1.25
Power Dissipation PD W
TA=70 0.8
Operating Junction Temperature TJ 150 
Storage Temperature Range TSTG -55/150 
Thermal Resistance-Junction to Ambient RJA 120 /W

Electrical Characteristics
(TA=25 Unless otherwise noted)
Parameter Symbol Conditions Min. Typ Max. Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250uA 30
V
Gate Threshold Voltage VGS(th) VDS=VGS,ID=250uA 0.4 1.0
Gate Leakage Current IGSS VDS=0V,VGS=12V 100 nA
VDS=24V,VGS=0V 1
Zero Gate Voltage Drain Current IDSS VDS=24V,VGS=0V uA
30
TJ=85
On-State Drain Current ID(on) VDS  5V,VGS=10V 6 A
VGS=10V,ID=4.0A 40 48
Drain-Source On-Resistance RDS(on) VGS=4.5V,ID=3.5A 44 52 m
VGS=2.5V,ID=2.8A 48 58
Forward Transconductance gFS VDS=4.5V,ID=2.5A 8 S
Diode Forward Voltage VSD IS=3.4A,VGS=0V 0.8 1.2 V
Dynamic
Total Gate Charge Qg 3.0 4.5
VDS=15V,VGS=10V
nC
ID2.6A
Gate-Source Charge Qgs 1.6
Gate-Drain Charge Qgd 0.6
Input Capacitance Ciss 320
VDS=15V,VGS=0V
Output Capacitance Coss 70 pF
f=1MHz
Reverse Transfer Capacitance Crss 30
td(on) 8 12
Turn-On Time VDD=15V,RL=15
tr 12 18
ID1.0A,VGEN=10V ns
td(off) RG=6 15 30
Turn-Off Time
tf 8 15

Alfa-MOS Technology Corp. www.alfa-mos.com


Rev.A Feb. 2011 Page 2
Alfa-MOS AFN3400
30V N-Channel
Technology Enhancement Mode MOSFET

Typical Characteristics

Alfa-MOS Technology Corp. www.alfa-mos.com


Rev.A Feb. 2011 Page 3
Alfa-MOS AFN3400
30V N-Channel
Technology Enhancement Mode MOSFET

Typical Characteristics

Alfa-MOS Technology Corp. www.alfa-mos.com


Rev.A Feb. 2011 Page 4
Alfa-MOS AFN3400
30V N-Channel
Technology Enhancement Mode MOSFET

Typical Characteristics

Alfa-MOS Technology Corp. www.alfa-mos.com


Rev.A Feb. 2011 Page 5
Alfa-MOS AFN3400
30V N-Channel
Technology Enhancement Mode MOSFET

Package Information ( SOT-23-3L )

2010 Alfa-MOS Technology Corp.


2F, No.80, Sec.1, Cheng Kung Rd., Nan Kang Dist., Taipei City 115, Taiwan (R.O.C.)
Tel : 886 2) 2651 3928
Fax : 886 2) 2786 8483
http://www.alfa-mos.com

Alfa-MOS Technology Corp. www.alfa-mos.com


Rev.A Feb. 2011 Page 6
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