REV. 1.

0 FS8205-DS-10_EN AUG 2009

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Datasheet

FS8205
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Dual N-Channel Enhancement Mode Power MOSFET
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 FS8205

Fortune Semiconductor Corporation

28F., No.27, Sec. 2, Zhongzheng E. Rd.,

Danshui Town, Taipei County 251, Taiwan
Tel.886-2-28094742
Fax886-2-28094874
www.ic-fortune.com

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This manual contains new product information. Fortune Semiconductor Corporation reserves the
rights to modify the product specification without further notice. No liability is assumed by Fortune
Semiconductor Corporation as a result of the use of this product. No rights under any patent
accompany the sale of the product

Rev. 1.0 2/6

 FS8205

1. Features
1.1 Low on-resistance
1.1.1 RDS(ON) = 25 m MAX. (VGS = 4.5V, ID = 4A)

1.1.2 RDS(ON) = 35 m MAX. (VGS = 2.5V, ID = 3A)

2. Applications
Li-ion battery management applications

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3. Ordering Information

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Product Number Description Package Type Quantity/Reel
FS8205 SOT23-6 package version SOT23-6 3,000

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4. Pin Assignment
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SOT23-6
Top View
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S1 1 4 G1
D12 2 5 D12
S2 3 6 G2

5. Absolute Maximum Ratings

Symbol Parameter Rating Units
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VDS Drain-Source Voltage 20 V

VGS Gate-Source Voltage 12 V
ID @TA = 25 Continuous Drain Current3 6 A
ID @TA = 70 Continuous Drain Current3 5 A
IDM Pulsed Drain Current1 25 A
PD @TA = 25 Total Power Dissipation 1 W
Linear Derating Factor 0.008 W/
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 150
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6. Thermal Data
Symbol Parameter Value Unit
Rthj-a Thermal Resistance Junction-ambient3 Max. 125 /W

Rev. 1.0 3/6

 FS8205

7. Electrical Characteristics
Electrical Characteristics @Tj = 25 ( unless otherwise specified )
Symbol Parameter Test Conditions Min. Typ. Max. Units
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA 20 - - V
BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA - 0.1 - V/
2
RDS(ON) Static Drain-Source On-Resistance VGS = 4.5V, ID = 4A - 21 25 m
VGS = 2.5V, ID = 3A - 27 35 m
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250uA 0.5 - 1.0 V

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Drain-Source Leakage Current (Tj = 25) VDS =20V, VGS = 0V - - 1 uA
IDSS
Drain-Source Leakage Current (Tj = 70) VDS =20V, VGS = 0V - - 25 uA
VGS = 10V 10

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IGSS Gate-Source Leakage - - uA

8. Source-Drain Diode

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Symbol Parameter Test Conditions Min. Typ. Max. Units
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IS Continuous Source Current (Body Diode) VD = VG = 0V, VS = 1.2V - - 0.83 A
VSD Forward On Voltage2 Tj = 25, IS = 1.25A, VGS = 0V - - 1.2 V
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1. Pulse width limited by Max. junction temperature.
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2. Pulse width 300us, duty cycle 2%.

3. Surface mounted on 1 in2 copper pad of FR4 board208/W when mounted on Min. copper
pad.
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Rev. 1.0 4/6

 FS8205

9. Typical Characteristics

On-Region characteristics @ Ta=25Deg On-Region characteristics @ Ta=125Deg

25 25

20 20
Id, Drain Current ( A )

Id, Drain Current ( A )

2.0V 2.0V
15 15
2.5V 2.5V
3.0V 3.0V
10 10
3.5V 3.5V

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4.0V 4.0V
5 5
4.5V 4.5V

0 0

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0 0.5 1 1.5 2 0 0.5 1 1.5 2
-5 -5

Vds, Drain to Source Voltage ( V ) Vds, Drain to Source Voltage ( V )

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Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
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On-Resistance Variation with Temperature Gate Threshold Voltage Temperature Coefficient
Vgs=4.5V, Ids=4A Vgs=Vdg, Ids=250uA
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1.4 1.4
Drain - Source On-Resistance

1.2 1.2
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Rds(on) - Normalized

Threshold Voltage

1 1
Vth - Normalized

0.8 0.8

0.6 0.6

0.4 0.4

0.2 0.2

0 0
-50 0 50 100 150 -50 0 50 100 150

Temperature ( Deg ) Temperature ( Deg )

Fig 3. Normalized On-Resistance Fig 4. Gate Threshold Variation with

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Temperature

Forward Characteristic of Rev erse Diode

2.5

1.5
Is (A)

Ta=25Deg
Ta=125Deg
1

0.5
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-0.3 0.2 0.7 1.2

Vsd, Soucre to Drain Voltage ( V )

Fig 5. Forward Characteristic of Reverse Diode

Rev. 1.0 5/6

 FS8205

10. Package Information

D
e1
DETAIL A Unit : mm
b SYMBOL MIN. TYP. MAX.
A 1.050 - 1.250
A1 0.000 - 0.100
A2 1.050 - 1.150
b 0.300 - 0.400
c 0.100 - 0.200
D 2.820 - 3.020
E1

E 1.500 - 1.700
E1 2.650 - 2.950
e 0.950 TYP

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e1 1.800 - 2.000
c L 0.700REF
e L1 0.300 - 0.600
0 - 8

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A2

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A

GAUGE PLANE 0.2

SEATING PLANE
A1

L1
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11. Revision History

Version Date Page Description
1.0 2009/08/17 - Version 1.0 released
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Rev. 1.0 6/6