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JAGow
C.D.Manning
1 Introduction
Abstract: To be able to develop a complete solar
photovoltaic power electronic conversion system Photovoltaic systems research seems largely to be
in simulation, it is necessary to define a circuit divided into two, fairly distinct areas; namely array
based simulation model for a PV cell in order to physics, design and optimisation, and solar power con
allow the interaction between a proposed version systems. This paper is not concerned with the
converter (with its associated control design of the arrays but rather with development of a
arrangement) and the PV array to be studied. To model of an array that is useful for power electronics
do this it is necessary to approach the modelling applications. Better, more efficient converter systems
process from the perspective of power electronics; may be dcveloped by matching the control and drive
that is to define the desired overall model in requirements of the converter system to the characteris
terms of the manner in which the electrical tics of the array. Alternative energy specialists often
behaviour of the cell changes with respect to the appear not to have sut1icient expertise in power elec
environmental parameters of temperature and tronics to be ahle to develop advanced converter sys
irradiance. The authors cover the development of tems, which can match the input characteristic of the
a general model which can be implemented on power electronic system to those of the array, in order
simulation platforms such as PSPICE or SABER to make best use of the array. Examples of such non
and is designed to be of use to power electronics optimal systems can be found in the field of solar
specialists. The model accepts irradiance and array/battery combinations for stand-alone use [2--4]
temperature as variable parameters and outputs and in the area of utility interactive systems [5-8, 3].
the I/V characteristic for that particular cell for A number of powerful component-based electronics
the above conditions. simulation systems, such as SPICE and SABER, have
become available over recent years, and such systems
are often used during the development of power-elec
tronics systems. In their basic form they do not provide
List of symbols a circuit model, or a component model, of the solar
array itself, and thus are dit1icult to integrate with cur
V solar cell terminal voltage rent electronics simulation technology used in the
I solar cell terminal current generic modelling of PV power electronic systems at a
1 \1
This paper presents a circuit-based simulation model
saturation current due to diffusion mechanism
of a PV array that can be implemented in any circuit
I
sl saturation current due to recombination in based simulation system such as SABER or SPICE.
space-charge layer Such a model was not available prior to its develop
A 'diode quality' factor (variable with cell type for ment by the authors, and one was developed to fill this
amorphous cells using the single exponential gap. This model of a PV array can be used in simula
model, but for polycrystalline cells may be set tion studies of power electronic PV conversion systems.
constant to 2 across all cell types; approxima
tion for Shockley-Read-Hall recombination in 2 Mathematical model for a photovoltaic cell
the space-charge layer [I])
Rs
A mathematical description of the current/voltage (II V)
cell series resistance
Rp
terminal characteristic for PV cells has been available
for some time. The double-exponential eqn. I, which
cell shunt resistance
e electronic charge, 1.6 x lO-19 C models a PV cell, is derived from the physics of the p
k Boltzmann's constant, 1.38 x 10-23 I/K n junction and is generally accepted as reflecting the
Vg band gap voltage, V behaviour of such cells, especially those constructed
from polycrystalline silicon [9]. It is also suggested that
T ambient temperature, Kelvin
cells constructed from amorphous silicon, usually using
lEE, 1999 thick-film deposition techniques, do not exhibit as
lEE Pmceemngs online no. 19990116 sharp a 'knee' in the curve as do the crystalline types,
and therefore the current/voltage model of eqn. 2 pro
and in revised form 10th September 1998
DOl: 1O.1049Iip-epa: 19990116
Paper first received 6th May vides a better fit to such cells. Eqn. 2 is in effect a sub
The authors are with the Department of Electronic and Electrical Engi set of the double exponential equation effected by
3TU. UK
neering. Loughborough University. Loughborough. Leioestershire, LEI I setting the second saturation current III to zero. Both
of these equations are implicit and nonlinear and there-
lEE Proc.-Electr. Power Appl., Vol. 146, No.2, March 1999 193
fore determination of an analytical solution is difficult. relatively straightforward, using iterative techniques,
-1,,2
once the five parameters are known. These parameters
I=Iph-Isl [e,rVt;R<) -1] [edvA'tn<) -1] will be different for each cell type, and will vary with
'V + IRs the environmental parameters. It is necessary to define
Rsh
the law with which this variation takes place (for a
given cell type) in order to complete the model. To do
:Rs
(1) this a set of equations must be defined; the solution of
which will relate each double-exponential model
1= Iph - Is (e'(Vi::'<) _ 1) _ 'V (2) parameter, in turn, to the current values of irradiance
and temperature, possibly incorporating constants
Working backwards from the equations, an equivalent which vary according to the specimen of array used.
circuit can be easily determined, and this aids develop
ment of the simulation model. This equivalent circuit is 2.1 Variation of double-exponential model
shown in Fig. 1. parameters
Little appears to be known about the variation of the
I
---+ double-exponential equation parameters with respect to
irradiance, with the exception of the photocurrent,
which is known to be linear. However, the temperature
variation is relatively simple to define. The general rela
tions of the double exponential model parameters, with
respect to temperature at a constant level of irradiance,
Fig.1
can be obtained from p-n junction physics [lO] and arc
Cell equivalent circuit (double exponential nwdel)
shown in cqns. 3-7:
Owing to the nature of these equations, there lies a Iph = Iph(nom)(1 + Ko(T - 300)) (3)
problem in determining values for the five double
exponential model parameters which would be repre
sentative of those of a physical array system. Although (4)
it is not beyond the bounds of possibility to use the
Rs
device physics to develop expressions for the I/V curve (5)
-
parameters, these would then only be in terms of semi
conductor material constants and manufacturing varia = Rs(nom) [1 - Ka(T 300)] (6)
( - K4 T)
bles such as doping densities. Most semiconductor
constants vary quite considerably with production RP = Rp(nom)e (I)
spread, are not provided on a manufacturer's data
The constants Ko-K4 are specific to a given specimen of
cell, while the base parameters Iph(nol11)' Rs(nom) and
sheet and are also sometimes quite difficult to deter
R (nO m) are values for the parameters at a temperature
mine with accuracy.
R
ot 300K. To complete the model it is necessary to
modify eqns. 3-7 to take into account the variation of
o
double
irradiance parameter exponential
determination solution
the five parameters with respect to irradiance. Irradi
+ ance and temperature could then be related mathemati
Iph
151
152
cally to cell current and voltage,
variables of unknown behaviour being present. In
with no further
--. V
A order to define the modifications, it is necessary to ana
R lyse a quantity of PV cell current/voltage data over a
s
Rp range of irradiance and temperature, in order to deter
mine the nature of the variation with irradiance. A
data acquisition system was developed to facilitate the
Fig.2 Ba,;c modelling process
temperature
the equation to the two environmental parameters. The 2.2 Double exponential curve fitting
essential modelling requirement is depicted in Fig. 2 With the aforementioned I/V data acquisition system, it
and it can be seen to be a two-stage process. Firstly, is possible to generate sets of I1V curves from a speci
the five parameters of the double-exponential equation men solar cell across its operating range. However, in
must be determined from the cell type and the environ order to be able to determine the law linking irradiance
mental parameters of irradiance and temperature and and temperature to the five double-exponential model
secondly, the double-exponential current-voltage equa parameters, it is necessary to determine for each of the
tion may be solved in order to yield the electrical char available IIV data sets a corresponding set of double
acteristics of the cell. exponential model parameters.
Solution of the double-exponential model equation The double-exponential model equation is both non
for current in terms of voltage (or indeed vice-versa) is linear, and implicit. To arrive at an analytical solution
194 lEE Proc.-Electr. Power Appl., Vol. J46, No. 2, i'l4arch }999
of its five parameters, given a set of data at a specific 1 IphO
temperature, is no easy task, and a better approach IsIO
would be to look towards a numerical solution using
= "2 ( (eVac) -- )
c ----vr 1
(9)
curve fitting.
It was therefore decided to develop a PV-based . IphD
J820 ( 0)
_!
curve-fitting system which is capable of running on a 2 Voc )
( 2!,T 1 1
-
e
"
solution of the PV curve was the Levenberg/Marquardt This leaves only Rj<j and Rpo to be determined. Most of
method [ 1 1], this being a robust method which exhibits the approximations that (;ould be used are derived in
sufficiently rapid convergence. The basic requirements some way [rom eqn. I, and thus rely upon the already
of the method are shown in the flowchart of Fig. 3. approximated values of the other parameters. [1]
presents a method based upon the use of the numerical
values for the integral under the IIV and power curves,
which appears to be valid; however, although the equa
curve
[dVI 1
method
eqn. II:
=
+
=
[ 1 1]
tive solution of the equation was used, arranged for
where
current in terms of voltage.
eIs1 eIs2
The Levenberg-Marquardt method additionally
(.N",,)
Xl " (
IT ) and X2 " AkT
r
= --e
r
= e
requires solutions of the first partial derivatives of the kT AkT
--
function to be fitted with respect to cach of thc func Examination of e qn . 11 shows that in the neighbour
tion parameters to be varied during the iterations. In hood of v,,,. the terms Xlv and X2v dominate over the
the case of the double-exponential model such equa much smaller 11R and therefore the IIR term may be
p
tions are simple to determine. neglected. The tmal equation for Rso is given by
J!
[ 1 1
parallel rcsistance is very small: Rs is small, therefore
the voltage drop across it is also small. At V = V ot' I
0, the terms in Rs drop out of the equation, and the
= Rpo = -
(':,i I
1
[+R., )
+ Xl; + "\2,
r r (13)
The saturation currents may then be approximated by The second of the two methods involved evaluating
making an assumption that these two currents are eqn. I at the maximum power point, using the approx
roughly equal as the cell voltage tends to zero, yielding imated value of R,o, and rearranging for Rpo to give
eqns. 9 and 10. eqn. 14.
lEE Proc.Electr. Power Appl.. Vol. 146, No, 2. March 1999 195
Iterative loop equations:
Is2 ()
.XJ kT
lsI e ()
)\2 Akl
r .
= = --e
vt ,. Avt
-
v '
Rs. o = - [dV I
dI vo,
+ 1 1
Xl" + X2v + R '
I
]
Xl',
[ Is1
-e
( d.," R,II
kT
)] X2 '
T
=
[182
--e
( elM R.,"
ACT
)]
Both systems gave a value of Rpo that resulted in con vt Ad
= l
"VI . +R,':dl
dI r8
1 ,
+X1; +)\2;
1
the saturation currents. Small perturbations in the satu (16)
ration currents can have a large inf1uence upon the
approximated value of Rpo. However, the reliability of
An alternative iterative method makes use of the sec
ond of the two methods for the determination of Rp'
convergence was better from the values calculated from
eqn. 14 and this was used in the final implementation.
i.e. eqn. 14, and involves placing this within an iterative
Ao
=
dI
2
I Ii<C
process requires firstly the determination of the double
exponential equation parameters for the cell at each
Iphu Ise, =
=
specific value of irradiance and temperature. This was
achieved by implementing a first-level fit of the double
Is20
_ Ise Ise
Is10 - (evoc) , -
_
(duRoQ )
2e ---pr - 1 2e
exponential parameters to the J/V data sets using the
2k1'
-1 method described in Section 2.2. An example of this
(15) can be seen in Fig. 4. This shows an experimental II V
8.1158
l
- oalo ta
e"p l
.. . .. ..
11.845
K.
ok
11.-
a."3
,
C
..
u
.. 11.838 -I---
e
n
11.-
11<1 8.8:1 1.8 1.:1 211 2:1 11.311 ".35 11.411 8.4:1 a.sa
Vol ialfe (V)
Fig.4 Fitted data superimpnsed upon 'raw' data
Table 1: Table of constants for the polycrystalline cell used in the tests
A K6 = 2 K7 = 0
curve. Superimposed upon the experimental curve is an produced are given below in eqns. 18-23. Since A is
l/V curve back-calculated from the double-exponential held at 2, the constants K6 and K7 are set at 2 and 0,
model parameters given, together with the values of the respectively.
parameters themselves. Iph = KoE(1 + KlT) (18)
2.4 Generation of equations relating the Is1 = K2T3e( ) (19)
double exponential model parameters to
irradiance and temperature 182 = K4Te(!?-) (20)
A
Equations relating the double-exponential equation
= K6 +K7T (21)
parameters to temperature have been published [10].
K'8 Kg + K'10 T
These equations give the variation of the parameters
with respect to temperature only. They do not take into
R s = + If (22)
account cffccts of changes in irradiance. They are
therefore unsuitable in their present form for use in a Rp = Kl1e(K12T) (23)
general-purpose PV modelling system where both tem The equations are applicable to any PV cell which sat
perature and irradiance may vary. A new sct of equa isfies the double-exponential model. It can be seen that
tions was developed incorporating irradiance terms for the equations contain a total of thirteen constants,
those parameters that are affected by irradiance. The these constants being specific to the cell that has been
equations were developed as described below. characterised by the system. Table 1 lists the values of
Firstly, the double exponential equation parameters, the constants for a sample of a polyerystalline cell used
extracted as described in Section 2.2, were plotted during the experiment.
against temperature and irradiance; the plot being used Figs. 5-9 show the experimentally extracted values of
as an aid to determine the nature of the relationships the double exponential model parameters superimposed
involved. Taking the parameters in turn one by one upon values generated from the model equations.
and determining the optimum relationship, the follow
ing equations were derived using a combination of pro 2.5 Circuit-level model
posed eq uations and curve fitting, in which the The modelling system developed is based around the
optimum fit is the one in which the chi-squared [11] characteristics of a single PV cell. The models of the
valuc was at a minimum. Accordingly, the equations so cells are such that if connected in an array the array
lEE Pmc-Electr. Power App/., Vol. 146. No.2, March 1999 197
can be treated (mathematically) as a single cell with of each panel into a single modelling unit, as the irradi
mUltipliers incorporated accordingly, dependent upon ance. and hence the temperature. is unlikely to change
the number of series/parallel chains in the array. This across the dimensions of a single panel but could possi
only holds if the irradianee and temperature are bly change across the plant in its entirety. Either way,
constant across the entire surface of the array. For a the modelling system opted for gives the greatest flexi
small array (c. 1 m2) this is likely to be true. However, bility in the manner in which the array may be simu
for a 1ield of arrays such as encountered in a large pho lated; the effect of a cloud passing could be simulated
to voltaic plant, this may well not be the case, and the by reducing and increasing the irradiance across the
simulated array would have to be constructed from dis plant in a 'Mexican wave' fashion. for example.
crete cell templates each representing the appropriate
2.5 -------
combination of cells, as necessary. Fig. 10 shows the
arrangement of an m x n array, while Fig. 1 1 shows the . t . . /;.,
decomposition for a 2 x 3 array as an example. . ..
2.0
qU}..
a:
Q) 1.5
"
"-9.
1 0----- --
. ,,<,
'"
c:
--
u;
.. &
'w 1 .0
T
!!! t
x
<)J "'Yl
.. . .
0
. . . . . . .
6
,s.
a T "* .
: t *
<:f3
0.5
E &.'&
4 i i i i
::l
0
295 300 305 31 0 315 320 325 330
0 te mpe rature , K
afR,
2
Fig.S Variation lVith temperature, with carrespondingjilled points
0 superimposed
31 0 31 5 *R
clcutated R.\
295 300 305 320 325 330
temperature, K
Ifl/'
+
x calculated
....
5 ------ a:
...- ."..
" 4 + +
+* ...., , ...:..t..
+
4+------- + +
.i
+
ar :: -
+-----------------------.---
-..
+ n+
6
2
+
3
:.
c 2 t-------------------------------4---
# w o
a .
295 300 305 31 0 315 320 325 330
te mpe rature , K
ri i p r ll
__t .1. f.:" .,.
* *
O+-La--._--_,----._--,
* Fig.9 Va at on of
+ Ry experimental
poims superimposed
I<p. calculated
295 300 305 31 0 31 5 320 325 330
te mpe rature , K
r
chain 1
Fig.6 Variation afal! values of,!,} with temperature. fogethe with (or
respondiJlg/l11l!d p()inl'
*II]
GllculateJ 'II
Iph IPh
ce ll1 ce ll 3
.. --re::J- ]
3 ------
r--r-T"
h 1 h Rs Rs
"? Rp cell4 Rp
2+------
: cell n :::
cell 2
.. .. .
i I
: array
II
...
ce ll n
negative bus I
.. '1:
* *
*
* *
**
...:
column composition
*
1"2
calculated 1.12
0.07
:s:
OJ'
(ec[(#;):k)R'J -1)
- [s2
0.06
......
Rs]
0.05
a.
...
0.04
1" 0.03
() CJ+
_
Rp
(24) u
:; 0.02
0.01
-
-- I ..,
'" c-I
where Ns and Np' arc the number of series cells, and thc o
o
voltage, V
0.1 0.2 0.3 0.4
number of parallel cells, respectively.
The actual implementation in SPICE or SABER is Fig.13 }Oxperimental //V data at irradiance 3291, temperature 326.8K
very straightforward, consisting of a solution to eqns. C experimental data
20
to
0
50
voltage, mV
0 1 00 150 200 250 300 350 400 450
3 Conclusions
solar cell
K4: 'req'
or SABER. The model accepts irradiance and tempera
K5: 'req*
ture as input parameters and outputs the IIV character
K6: 'reg*
istic for the cell for the above conditions. This model
K7: 'req' can be applied to photovoltaic cell types whose device
K8: 'req' physics conform to double-exponential behaviour.
K9: 'reg'
KID: *req'
Using the modelling system presented in the paper, cell
Kll: 'req'
samples may be characterised to obtain a set of con
stants. If thcsc constants are submitted to a circuit-level
K12: 'req'
simulation templatc the electrical behaviour of arrays
EI: 'req' of cells may be simulatcd across the range of irradiance
nseries: 'req' and temperatnre for which the model has been defined.
nparallel: 'req' In the context of powcr electronics, thcre is now availa
Fig.12 PV cell symbo!using DesignStar in SABER ble a model for a photo voltaic array installation, which
will allow the effects of varying irradiance and temper
2.7 SABER model result ature to be simulated in conjunction with a power con
The SABER model was used to demonstrate the per version systcm. This will enable the behaviour of the
formance of the modelling process. Fig. 13 shows a power convcrsion system to be analysed and optimised
sample data set from those extracted from the cell for operation in the field of solar photovoltaic power
including the power curve for the cell. The IIV and conversion.
lEE Prot.-Electr. Power Appl. Vol. 146, No.2, March 1999 199
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WILK, H.: ' 30kW photovoltaic plant in the Alps of Austria'.
Proceedings of the 10th European Phofovolta;c solar energy con
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GLYNN, L.W., McDERMOTT, J.K., and OSS, J.P.: 'SABER ference. Lisbon. Portugal. 1991, pp. 766--770
ILICETO, A., and PREVI, A.:
Proceedings of the 23rd Intersociety Energy Conversion Engineer 'ENEL's 3MW PV power station preliminary design'. Proceed
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A., and TOKIZAKI, H.: 'Resi de n tial solar powered air condi
2 TANAKA, K., SAKOGUCHI, E., FUKUDA, Y., TAKEOKA, Lisbon, Portugal, 1991, pp. 1277-1280
8 TANAKA, K., SAKOGUCHI, E., FUKUDA, Y., TAKEOKA,
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DUARTE, J.L., WIJNTJENS, J.A.A., and ROZENBOOM, J.:
BRINKWORTH, B.1.. MAR-
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200 lEE Proc. -Electr. Power Appl. . Vol. 146. No. 2. March 1999