Q.No.

QUESTIONS
1. A p - n p power transistor is a ----- layer device.
A) n+ pn- n+
B) p+ np- p+
C) n- n+ n- p+
D) p+ n- p+ n-
2. The width of base region is about
A) 50 to 100 m
B) 5 to 20m
C) 10 to 100 m
D) 100 to 250 m
3. The doping density of a n-p-n- transistor collector is
A) 1014 cm-3
B) 1015 cm-3
C) 1614 cm-3
D) 1019 cm-3
4. When A is gain of auxiliary transistor and M is gain of
main transistor, the gain of Darlington pair BJT is
A) = MA + M+ A
B) = MA + M
C) = MA + A
D) = M A - M - A
5. The overdrive factor(ODE) is equal to
A) IBS/IB
B) IB/IBS
C) IE/IBS
D) IC/IBS
6. A power transistor is a ----- layer device.
A) two
B) three
C) four
D) five
7. The forward current gain is given by
A) IC/IB
B) IC/IE
C) IE/IC
D) IE/IB
8. The total power loss in two junctions of power transistor is
A) VBE IB + VCE IC
B) VBE IB + VCE IE
C) VBC IB + VCE IC
D) VBE IC + VCE IB
9. Which of the following statements are true
A) VCEsus < VCE0
B) VCE0 < VCB0
C) VCEsus < VCE0
D) VCE0 < VCB0
10. Power BJT is a switch when
A) both base emitter and collector base junction is
forward biased
B) both base emitter and collector base junction is
reverse biased
C) base emitter is forward biased and collector base
junction is reverse biased
D) base emitter is reverse biased and collector base
junction is forward biased
11. Secondary breakdown occurred in
A) BJT only
B) MOSFET only
C) Both BJT and MOSFET
D) SIT only
12. The relation between and is
A) = /(+1)
B) = /(1-)
 C) =/(1+)
D) = /(-1)
13. The forced current gain f is
A) Ics/IB
B) IB/IBS
C) IBS/IB
D) IB/ICS
14. Which is the correct statement for power transistor
A) FBSOA and RBSOA exist in power transistor
B) RBSOA is less than FBSOA
C) FBSOA is less than RBSOA
D) only FBSOA exist
15. In a n-p-n power BJT , the relationship between VCEO and
VCBO is
A) VCEO = VCBO/
B) VCEO = VCBO/ 1/2
C) VCEO = VCBO/1/3
D) VCEO = VCBO/1/4
16. ODF of power transistor is
A) 5
B) 6
C) 7
D) 8
17. The n- drift region has----- doping density
A) 1014 cm-3
B) 1015 cm-3
C) 1016 cm-3
D) 1019 cm-3
18. A n-p-n power transistor is a ------- layer ------ structure.
A) Four , n+ p n- n+
B) three, layer n+ pn+
C) five,n+ p n- n+ n+
 D) two n+ p n-
19. The quasi saturation is occurred due to the --------- doped
collector drift n- region in the structure of power transistors.
A) Uniformly
B) Moderately
C) Heavily
D) Lightly
20. The power dissipation of BJT in the quasi saturation is ------
-- than the power dissipation during -------- saturation.
A) greater, hard
B) lesser, hard
C) equal to hard
D) zero, hard
21. During quasi saturation of BJT, the double injection can be
occurred in the -------- region.
A) base
B) collector
C) emitter
D) drift
22. A power transistor (BJT) is a -----
A) voltage controller device
B) current controlled device
C) both current and voltage controlled device
D) none of the above
23. RBSOA of power transistor is ----- than FBSOA.
A) larger
B) smaller
C) equal
D) 1/5 times
24. The isolation between the high power collector side and the
low power base side of power BJT is provided by using ----
------ and ---------.
A) transformer and diodes
 B) diodes and opto coupler
C) opto couplerand dc motor
D) opto coupler, Transformer
25. Under forward bias condition a large number of
___________________ carriers are introduced in the base
region.
A) majority
B) Minority
C) Both minority and majority
D) None of the above
26. Some minority charge carriers reaching base
__________________ with majority carriers there and the
rest of them ___________________ to the collector.
A) Diffuse , recombine
B) diffuse, diffuse
C) Recombine, diffuse
D) Recombine
27. When both B-E & C-B junction of a BJT are forward biased
it is said to be in the _______________ region.
A) saturation team
B) cut-off
C) active region
D) secondary breakdown
30. In a Power BJT multiple, narrow finger like distributed
emitter structure is used to avoid emitter
___________________.
A) quasi saturation
B) hard saturation
C) current crowding
D) secondary breakdown