ON Semiconductor

Amplifier Transistors
NPN Silicon P2N2222A
MAXIMUM RATINGS
Rating Symbol Value Unit
CollectorEmitter Voltage VCEO 40 Vdc
CollectorBase Voltage VCBO 75 Vdc
EmitterBase Voltage VEBO 6.0 Vdc
Collector Current Continuous IC 600 mAdc
Total Device Dissipation @ TA = 25C PD 625 mW
1
Derate above 25C 5.0 mW/C 2
3
Total Device Dissipation @ TC = 25C PD 1.5 Watts
Derate above 25C 12 mW/C CASE 2911, STYLE 17
TO92 (TO226AA)
Operating and Storage Junction TJ, Tstg 55 to +150 C
Temperature Range

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit COLLECTOR
1
Thermal Resistance, Junction to Ambient RJA 200 C/W
Thermal Resistance, Junction to Case RJC 83.3 C/W
2
BASE

3
EMITTER
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage V(BR)CEO 40 Vdc
(IC = 10 mAdc, IB = 0)
CollectorBase Breakdown Voltage V(BR)CBO 75 Vdc
(IC = 10
Adc, IE = 0)
EmitterBase Breakdown Voltage V(BR)EBO 6.0 Vdc
(IE = 10
Adc, IC = 0)
Collector Cutoff Current ICEX 10 nAdc
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
Collector Cutoff Current ICBO Adc
(VCB = 60 Vdc, IE = 0) 0.01
(VCB = 60 Vdc, IE = 0, TA = 150C) 10
Emitter Cutoff Current IEBO 10 nAdc
(VEB = 3.0 Vdc, IC = 0)
Collector Cutoff Current ICEO 10 nAdc
(VCE = 10 V)
Base Cutoff Current IBEX 20 nAdc
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)

Semiconductor Components Industries, LLC, 2001 1 Publication Order Number:

March, 2001 Rev. 1 P2N2222A/D
 P2N2222A

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)

Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain hFE
(IC = 0.1 mAdc, VCE = 10 Vdc) 35
(IC = 1.0 mAdc, VCE = 10 Vdc) 50
(IC = 10 mAdc, VCE = 10 Vdc) 75
(IC = 10 mAdc, VCE = 10 Vdc, TA = 55C) 35
(IC = 150 mAdc, VCE = 10 Vdc)(1) 100 300
(IC = 150 mAdc, VCE = 1.0 Vdc)(1) 50
(IC = 500 mAdc, VCE = 10 Vdc)(1) 40
CollectorEmitter Saturation Voltage(1) VCE(sat) Vdc
(IC = 150 mAdc, IB = 15 mAdc) 0.3
(IC = 500 mAdc, IB = 50 mAdc) 1.0
BaseEmitter Saturation Voltage(1) VBE(sat) Vdc
(IC = 150 mAdc, IB = 15 mAdc) 0.6 1.2
(IC = 500 mAdc, IB = 50 mAdc) 2.0

SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product(2) fT 300 MHz
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance Cobo 8.0 pF
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance Cibo 25 pF
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance hie k
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2.0 8.0
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 0.25 1.25
Voltage Feedback Ratio hre X 104
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 8.0
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 4.0
SmallSignal Current Gain hfe
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 50 300
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 75 375
Output Admittance hoe
mhos
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 5.0 35
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 25 200
Collector Base Time Constant rbCc 150 ps
(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz)
Noise Figure NF 4.0 dB
(IC = 100
Adc, VCE = 10 Vdc, RS = 1.0 k, f = 1.0 kHz)

SWITCHING CHARACTERISTICS
Delay Time (VCC = 30 Vdc, VBE(off) = 2.0
2.0 Vdc, td 10 ns
Rise Time IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1) tr 25 ns
Storage Time (VCC = 30 Vdc, IC = 150 mAdc, ts 225 ns
IB1 = IB2 = 15 mAdc)
Ad ) (Figure
(Fi 2)
Fall Time tf 60 ns

1. Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%.

2. fT is defined as the frequency at which |hfe| extrapolates to unity.

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 P2N2222A

SWITCHING TIME EQUIVALENT TEST CIRCUITS

+
30 V +
30 V
1.0 to 100 s, 1.0 to 100 s, 200
200 +16 V
+16 V DUTY CYCLE 2.0% DUTY CYCLE 2.0%

0 0
1 k -14 V 1k CS* < 10 pF
-
2 V CS* < 10 pF
< 2 ns < 20 ns
1N914

Scope rise time < 4 ns -
4 V

*Total shunt capacitance of test jig,
connectors, and oscilloscope.
Figure 1. TurnOn Time Figure 2. TurnOff Time

1000
700
500 TJ = 125C

300
hFE , DC CURRENT GAIN

200
25C
100
70
-55C
50
30 VCE = 1.0 V
20 VCE = 10 V

10
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700 1.0 k
IC, COLLECTOR CURRENT (mA)

Figure 3. DC Current Gain

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

1.0
TJ = 25C
0.8

0.6 IC = 1.0 mA 10 mA 150 mA 500 mA

0.4

0.2

0
0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50
IB, BASE CURRENT (mA)

Figure 4. Collector Saturation Region

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 P2N2222A

200 500
IC/IB = 10 VCC = 30 V
300 IC/IB = 10
100 TJ = 25C
200 ts = ts - 1/8 tf IB1 = IB2
70 tr @ VCC = 30 V
50 TJ = 25C
td @ VEB(off) = 2.0 V
100
30 td @ VEB(off) = 0
t, TIME (ns)

t, TIME (ns)
70
20 tf
50
30
10
7.0 20
5.0
10
3.0 7.0
2.0 5.0
5.0 7.0 10 20 30 50 70 100 200 300 500 5.0 7.0 10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 5. TurnOn Time Figure 6. TurnOff Time

10 10
RS = OPTIMUM f = 1.0 kHz
IC = 1.0 mA, RS = 150 RS = SOURCE
8.0 RS = RESISTANCE 8.0
500 A, RS = 200 IC = 50 A
NF, NOISE FIGURE (dB)

100 A, RS = 2.0 k NF, NOISE FIGURE (dB) 100 A

6.0 50 A, RS = 4.0 k 6.0 500 A
1.0 mA

4.0 4.0

2.0 2.0

0 0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (OHMS)

Figure 7. Frequency Effects Figure 8. Source Resistance Effects

f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)

30 500
VCE = 20 V
20 TJ = 25C
300
Ceb
CAPACITANCE (pF)

10 200

7.0

5.0
100
Ccb
3.0 70

2.0 50
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)

Figure 9. Capacitances Figure 10. CurrentGain Bandwidth Product

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 P2N2222A

1.0 +0.5
TJ = 25C

0.8 0 RVC for VCE(sat)

COEFFICIENT (mV/ C)
VBE(sat) @ IC/IB = 10
V, VOLTAGE (VOLTS)

1.0 V -
0.5
0.6
VBE(on) @ VCE = 10 V -
1.0
0.4
-
1.5

0.2
-
2.0 RVB for VBE
VCE(sat) @ IC/IB = 10
0 -
2.5
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 11. On Voltages Figure 12. Temperature Coefficients

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 P2N2222A

PACKAGE DIMENSIONS

TO92 (TO226)
CASE 2911
ISSUE AL

NOTES:
A B 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
P BEYOND DIMENSION K MINIMUM.
L
SEATING INCHES MILLIMETERS
PLANE K DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
X X D G 0.045 0.055 1.15 1.39
G H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
H J K 0.500 --- 12.70 ---
L 0.250 --- 6.35 ---
V C N 0.080 0.105 2.04 2.66
P --- 0.100 --- 2.54
SECTION XX R 0.115 --- 2.93 ---
1 N V 0.135 --- 3.43 ---
N

STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER

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 P2N2222A

Notes

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 P2N2222A

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