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PD - 9.

543C

IRFPG50
HEXFET Power MOSFET

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10/29/97
IRFPG50

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IRFPG50

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IRFPG50

100
OPERATION IN THIS AREA LIMITED
BY RDS(on)

10us
I D , Drain Current (A)

10
100us

1ms

1
10ms

TC = 25 C
TJ = 150 C
Single Pulse
0.1
10 100 1000 10000
VDS , Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating


Area

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IRFPG50

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IRFPG50

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IRFPG50

Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations


D.U.T
Low Stray Inductance
Ground Plane

Low Leakage Inductance
Current Transformer
-

+


- +
-


RG dv/dt controlled by R G +
Driver same type as D.U.T. VDD
-
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test

Driver Gate Drive


P.W.
Period D=
P.W. Period

VGS=10V *

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple 5% ISD

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFETS


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IRFPG50

TO-247AC Package Details

3 .6 5 (.1 4 3 ) -D -
1 5 .90 (.6 2 6) 3 .5 5 (.1 4 0 ) 5 .3 0 (.2 0 9 )
1 5 .30 (.6 0 2) 4 .7 0 (.1 8 5 )
0 .25 (.0 1 0) M D B M
-B - -A - 2 .5 0 (.0 8 9)
1 .5 0 (.0 5 9)
5 .5 0 (.2 1 7 ) 4

2 0 .3 0 (.80 0 )
5. 50 (.2 17 ) NOT ES :
1 9 .7 0 (.77 5 ) 2X
4. 50 (.1 77 ) 1 DIME NSIO NING & TO LERAN CING
PE R AN SI Y 14.5M, 1982.
1 2 3 2 CO NTRO LLING DIMENS IO N : IN CH .
3 CO NF ORM S T O JEDE C O UTLINE
-C - T O-247-A C.
1 4.8 0 (.5 8 3 )
4 .3 0 (.1 7 0 )
1 4.2 0 (.5 5 9 )
3 .7 0 (.1 4 5 )

2 .4 0 (.09 4 ) LEAD AS SIGN MENT S


1 .4 0 (.0 56 ) 0 .8 0 (. 03 1 )
2 .0 0 (.07 9 ) 3 X 1 .0 0 (.0 39 ) 3 X 0 .4 0 (. 01 6 ) 1 - G ATE
2X 2 - DRAIN
0 .25 (.0 10 ) M C A S 2.6 0 (.10 2 ) 3 - SO URCE
5 .45 (.2 1 5) 2.2 0 (.08 7 ) 4 - DRAIN
3 .4 0 (.1 3 3 )
2X 3 .0 0 (.1 1 8 )

Part Marking
E XAM P LE : T H IS IS A N IR FP E3 0 A
W IT H AS SE MB L Y P AR T N U M B ER
L O T C O D E 3 A1 Q IN TER N AT IO N AL
R EC T IF IER IR F PE 3 0
LOGO
3 A1 Q 9 3 0 2
A S SEM B L Y D A TE C O D E
LOT COD E (Y YW W )
YY = YE A R
W W W EE K

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T 3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: 171 (K&H Bldg.) 30-4 Nishi-ikebukuro 3-chome, Toshima-ku, Tokyo Japan Tel: 81 33 983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 16907 Tel: 65 221 8371
Data and specifications subject to change without notice. 10/97
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