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RDS(ON) 1
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDSS Drain-source voltage Tj = 25 C to 150C - 400 V
VDGR Drain-gate voltage Tj = 25 C to 150C; RGS = 20 k - 400 V
VGS Gate-source voltage - 30 V
ID Continuous drain current Tmb = 25 C; VGS = 10 V - 7.2 A
Tmb = 100 C; VGS = 10 V - 4.6 A
IDM Pulsed drain current Tmb = 25 C - 29 A
PD Total dissipation Tmb = 25 C - 125 W
Tj, Tstg Operating junction and - 55 150 C
storage temperature range
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-mb Thermal resistance junction - - 1 K/W
to mounting base
Rth j-a Thermal resistance junction in free air - 60 - K/W
to ambient
ELECTRICAL CHARACTERISTICS
Tj = 25 C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)DSS Drain-source breakdown VGS = 0 V; ID = 0.25 mA 400 - - V
voltage
V(BR)DSS / Drain-source breakdown VDS = VGS; ID = 0.25 mA - 0.1 - %/K
Tj voltage temperature
coefficient
RDS(ON) Drain-source on resistance VGS = 10 V; ID = 3.6 A - 0.7 1
VGS(TO) Gate threshold voltage VDS = VGS; ID = 0.25 mA 2.0 3.0 4.0 V
gfs Forward transconductance VDS = 30 V; ID = 3.6 A 2 4 - S
IDSS Drain-source leakage currentVDS = 400 V; VGS = 0 V - 1 25 A
VDS = 320 V; VGS = 0 V; Tj = 125 C - 30 250 A
IGSS Gate-source leakage current VGS = 30 V; VDS = 0 V - 10 200 nA
Qg(tot) Total gate charge ID = 7.2 A; VDD = 320 V; VGS = 10 V - 52 62 nC
Qgs Gate-source charge - 3 5 nC
Qgd Gate-drain (Miller) charge - 26 30 nC
td(on) Turn-on delay time VDD = 200 V; RD = 27 ; - 12 - ns
tr Turn-on rise time RG = 12 - 33 - ns
td(off) Turn-off delay time - 93 - ns
tf Turn-off fall time - 42 - ns
Ld Internal drain inductance Measured from tab to centre of die - 3.5 - nH
Ld Internal drain inductance Measured from drain lead to centre of die - 4.5 - nH
Ls Internal source inductance Measured from source lead to source - 7.5 - nH
bond pad
Ciss Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 620 - pF
Coss Output capacitance - 108 - pF
Crss Feedback capacitance - 63 - pF
PD% Normalised Power Derating Zth j-mb, Transient thermal impedance (K/W) PHP3N60
120 1
D = 0.5
110
100 0.2
90
0.1
80 0.1 0.05
70
0.02
60
50
40 0.01
single pulse PD tp tp
30 D=
T
20
10 T
t
0 0.001
0 20 40 60 80 100 120 140 1us 10us 100us 1ms 10ms 100ms 1s
Tmb / C tp, pulse width (s)
40 5V
30 5
VGS = 4.5 V
20
10
0 0
0 20 40 60 80 100 120 140 0 5 10 15 20 25 30
Tmb / C VDS, Drain-Source voltage (Volts)
ID, Drain current (Amps) PHP3N50 RDS(on), Drain-Source on resistance (Ohms) PHP5N40
100 2.5
4.5 V 5V 5.5 V VGS = 6 V Tj = 25 C
ID
S/ 2
6.5 V
VD
) =
ON tp = 10 us 7V
10 S( 10 V
RD 1.5
100 us
1
1 1 ms
DC 10 ms
0.5
0.1 0
10 100 1000 10000 0 5 10 15 20
VDS, Drain-source voltage (Volts) ID, Drain current (Amps)
15 typ.
3
Tj = 150 C
min.
10
2
5 1
0 0
0 2 4 6 8 10 -60 -40 -20 0 20 40 60 80 100 120 140
VGS, Gate-Source voltage (Volts) Tj / C
5
150 C 2% typ 98 %
1E-03
4
3 1E-04
2
1E-05
1
0 1E-06
0 5 10 15 20 0 1 2 3 4
ID, Drain current (A) VGS / V
100
1 Coss
Crss
0
-60 -40 -20 0 20 40 60 80 100 120 140 10
1 10 100 1000
Tj / C VDS, Drain-Source voltage (Volts)
Fig.9. Normalised drain-source on-state resistance. Fig.12. Typical capacitances, Ciss, Coss, Crss.
a = RDS(ON)/RDS(ON)25 C = f(Tj); ID = 3.6 A; VGS = 10 V C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
VGS, Gate-Source voltage (Volts) PHP5N40 IF, Source-Drain diode current (Amps) PHP5N40
15 20
ID = 7.2 A VGS = 0 V
240 V
Tj = 25 C
80 V VDD = 320 V 15
10
10
150 C Tj = 25 C
5
5
0 0
0 10 20 30 40 50 60 70 80 0 0.2 0.4 0.6 0.8 1 1.2 1.4
Qg, Gate charge (nC) VSDS, Source-Drain voltage (Volts)
Fig.14. Typical switching times; td(on), tr, td(off), tf = f(RG) Fig.17. Maximum permissible non-repetitive
avalanche current (IAS) versus avalanche time (tp);
unclamped inductive load
1.05 125 C
1
0.95 0.1
0.9 PHP7N40E
0.01
0.85 1E-06 1E-05 1E-04 1E-03 1E-02
-100 -50 0 50 100 150
Tj, Junction temperature (C)
Avalanche time, tp (s)
Fig.15. Normalised drain-source breakdown voltage; Fig.18. Maximum permissible repetitive avalanche
V(BR)DSS/V(BR)DSS 25 C = f(Tj) current (IAR) versus avalanche time (tp)
MECHANICAL DATA
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220 SOT78
E A
P A1
q
D1
L2(1) L1
Q
b1
L
1 2 3
b c
e e
0 5 10 mm
scale
mm 4.5 1.39 0.9 1.3 0.7 15.8 6.4 10.3 15.0 3.30 3.8 3.0 2.6
2.54 3.0
4.1 1.27 0.7 1.0 0.4 15.2 5.9 9.7 13.5 2.79 3.6 2.7 2.2
Note
1. Terminals in this zone are not tinned.
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1999
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