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Enhanced light scattering of the forbidden longitudinal optical phonon mode studied by micro-

Raman spectroscopy on single InN nanowires

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2010 Nanotechnology 21 315702

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Nanotechnology 21 (2010) 315702 (6pp) doi:10.1088/0957-4484/21/31/315702

Enhanced light scattering of the forbidden

longitudinal optical phonon mode studied
by micro-Raman spectroscopy on single
InN nanowires
E O Schafer-Nolte1,2, T Stoica1,3 , T Gotschke1 , F A Limbach1 ,
E Sutter2, P Sutter2, D Grutzmacher1 and R Calarco1
1
Institute of Bio- and Nanosystems (IBN-1) and JARA-FIT Julich-Aachen Research Alliance,
Forschungszentrum Julich, D-52425 Julich, Germany
2
Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY 11973,
USA

E-mail: t.stoica@fz-juelich.de

Received 24 March 2010, in final form 28 May 2010

Published 15 July 2010
Online at stacks.iop.org/Nano/21/315702

Abstract
In the literature, there are controversies on the interpretation of the appearance in InN Raman
spectra of a strong scattering peak in the energy region of the unscreened longitudinal optical
(LO) phonons, although a shift caused by the phononplasmon interaction is expected for the
high conductance observed in this material. Most measurements on light scattering are
performed on ensembles of InN nanowires (NWs). However, it is important to investigate the
behavior of individual nanowires and here we report on micro-Raman measurements on single
nanowires. When changing the polarization direction of the incident light from parallel to
perpendicular to the wire, the expected reduction of the Raman scattering was observed for
transversal optical (TO) and E2 phonon scattering modes, while a strong symmetry-forbidden
LO mode was observed independently on the laser polarization direction. Single Mg- and
Si-doped crystalline InN nanowires were also investigated. Magnesium doping results in a
sharpening of the Raman peaks, while silicon doping leads to an asymmetric broadening of the
LO peak. The results can be explained based on the influence of the high electron concentration
with a strong contribution of the surface accumulation layer and the associated internal electric
field.
(Some figures in this article are in colour only in the electronic version)

1. Introduction can be covered, which makes the material ideally applicable in

InN is a very intriguing material due to its physical properties
as well as the variety of promising applications. Its
direct bandgap of 0.64 eV makes it an ideal candidate for
optoelectronic applications in the near-infrared region [1].
InN-based quantum well structures are reported to emit at the
technologically important wavelength of 1.55 m suitable for
fiber optics communication [2]. Also terahertz emission by
InN has been demonstrated [3]. By appropriate alloying with
GaN an extended energy range including the visible spectrum
3 Author to whom any correspondence should be addressed.
solar cells [46] and solid state lighting [7, 8]. Furthermore,
the small electron effective mass, the large mobility and the
high peak and saturation velocity are promising for high
speed device applications [9, 10]. The unusual band bending
and the electron accumulation at the surface of InN can be
exploited for chemical sensing and field effect devices [11, 12].
However, a major drawback of III-nitrides is the difficult
fabrication of high quality crystalline films due to lattice
mismatch with heterosubstrates. In this respect, nanowires
(NWs) represent a preferred alternative to thin films, due to
their single nanocrystal morphology and enhanced ability for
lateral elastic relaxation.

0957-4484/10/315702+06$30.00 1 2010 IOP Publishing Ltd Printed in the UK & the USA
Nanotechnology 21 (2010) 315702
Raman spectroscopy, widely used in the study of
semiconductors, yields information about lattice properties
such as crystal structure and quality, as well as electronic
properties like carrier concentration and mobility. It has the
advantages of being non-destructive and contactless and does
not require any special sample preparation. The first-order
phonon Raman scattering for InN follows the selection rules
corresponding to its wurtzite structure [13]. For back scattering
geometry, if the excitation laser light propagates along the c
axis, the allowed scattering modes are the non-polar mode E2
and the longitudinal phonon A1 (LO), while for the incident
light perpendicular to the c axis, only the E2 and the transversal
optical phonons A1 (TO) and E1 (TO) are allowed. The LO
mode can be in polar semiconductors strongly coupled to the
plasmonic system of the free carriers, resulting in a low-energy
branch PLP (at energy smaller than the TO) and a high-
energy branch PLP+ (at energy higher than the LO mode).
The Raman shift of these coupled modes increases with the
plasma frequency and can be used to determine the density
and mobility of the free carriers. Raman studies on InN
nanowires reported so far showed a simultaneous occurrence
of a strong peak in the region of the expected uncoupled
longitudinal optical A1 (LO) and E1 (LO) modes and of the
broad low-energy branch of the LO phononplasmon coupled
mode (PLP ) close to A1 (TO) [14, 15].
The detailed analysis of the PLP lineshape in InN and
the spatial location of the electrons are still controversial.
Some papers attribute the scattering mechanism, from
which originates the Raman peak close to A1 (TO), not
to the low branch phononplasmon coupled mode PLP ,
but to an impurity-induced one or due to charge-density
fluctuations [16]. Cusco et al have clearly found for high
mobility InN films with electron concentrations in the range
of 2 1018 2 1019 cm3 that PLP scattering arises from
coupling to the bulk-electron plasmons and can be explained
by the standard dielectric model based on dipole-allowed
deformation potential and electro-optic mechanism [17]. In
contrast, for InN NWs, the PLP peak was attributed not to the
wire bulk but to the spontaneous accumulation of electrons on
the lateral surfaces of the NWs [14]. The high-energy branch
of the LO phononplasmon coupled PLP+ mode has not been
detected in InN NWs nor in compact layers. The absence of a
clear PLP+ scattering in Raman spectra in spite of a detected
PLP was explained by a rapid broadening of PLP+ due to
high carrier density and the associated fluctuations [17]. It
is worth noting that at high electron concentrations the PLP
behaves more phonon-like, while the PLP+ has a dominant
plasmon character and therefore is more sensitive to the carrier
distribution. Another explanation given in the literature for
the absence of the PLP+ is based on the unscreening, and
consequently de-coupling, of the polar LO phonons in the
case of highly damped plasmons, while an LO-phonon-like
structure occurs as an interaction of the polar phonons with
electronhole pairs [18]. But the origin of the unscreened
LO peak in InN is controversial as well. For InN ensemble
nanowires, the LO peak was attributed to E1 (LO) scattering
in the NW core with low carrier concentration [14, 15]. The
observation of the symmetry-forbidden E1 (LO) mode and
E O Schafer-Nolte et al
not of the symmetry-allowed A1 (LO) in those experiments
was explained by strong scattering of the excitation light
inside the NW ensemble of the as-grown samples. In
contrast, in their study on InN films Cusco et al attributed the
unscreened LO peak to surface-field-induced scattering in the
accumulation layer [17]. To summarize, different mechanisms
and models have been proposed for the interpretation of the
LO and PLP peaks. Raman spectroscopy of single NWs
in a controlled scattering geometry, avoiding multiple light
scattering in NW ensembles and fluctuations from wire to wire
as well as along a wire, can contribute to resolve controversies
in the interpretation of Raman scattering in InN. Raman
measurements on individual NWs may also offer information
about the light interaction with the electronic and phononic
systems in single InN nanowire devices.
In this paper we present Raman measurements on undoped
and Mg-doped, as well as Si-doped single nanowires. Taking
advantage of the well-defined scattering geometry and the
high spatial resolution, the presented data provide relevant
information about both the light scattering mechanism and
the physical properties of InN nanowires. To the best of our
knowledge, this is a first report on single InN nanowire Raman
measurements.
2. Experimental details
InN nanowires are grown catalyst-free by plasma-assisted
molecular beam epitaxy under N-rich conditions on Si(111)
substrates, as already reported by various groups [1923].
Details of the growth mechanism as well as the structural,
morphological, optical and electrical properties of undoped
nanowires have been discussed elsewhere [19, 2429]. The
obtained nanowires have a diameter between 80 and 120 nm
and a length of up to 2 m. Nominal p- and n-type
doping is achieved by supplying Mg and Si during growth,
respectively. The dopant fluxes in this paper are given in beam
equivalent pressure (BEP). To investigate single nanowires,
they were removed from the growth substrate and spread on
a graphite substrate (highly ordered pyrolytic graphite) by a
dry transfer method. Raman scattering measurements have
been carried out using a WITec alpha 300 microscopy system.
For measurements on nanowire ensembles a 20 (NA 0.4)
microscope objective was used to focus the laser beam and
to collect the scattered light. Laser radiation with 532 and
633 nm wavelength with a power of about 5 mW was employed
as an excitation source. The scattered light was analyzed in
a 1800 mm1 grating spectrometer with a spectral resolution
of about 1 cm1 . Single scan was used for acquisition of
Raman spectra of NW ensembles, with an integration time of 1
and 2 h for 532 and 633 nm laser wavelengths, respectively.
For Raman studies on single nanowires a 100 (NA 0.9)
microscope objective was used to focus the 532 nm laser
beam to a spot size of about 300 nm. To avoid strong laser
heating, the laser power was reduced to 0.5 mW. The scattered
light was analyzed using a 600 mm1 spectrometer grating
with a spectral resolution of about 3 cm1 . The sample was
scanned relative to the laser beam by a piezoelectrical stage
to obtain spatially resolved intensity maps. Since the Raman
2
Nanotechnology 21 (2010) 315702
signal of a single InN nanowire is very weak, the wire was
imaged by mapping the intensity of the elastically scattered
light (Rayleigh peak at 0 cm1 ). It was observed that this
intensity is strongly enhanced when the wire is in the laser
focus. Therefore a good contrast between the nanowire and
the graphite substrate could be achieved in a relative short
acquisition time (about 15 min for a complete map). After
localizing the nanowire, the laser spot was positioned on the
wire and a single spectrum with an integration time of 1 h was
recorded.
3. Results and discussion
Raman spectra of undoped InN nanowire ensembles are shown
in figure 1. The samples are measured as-grown, i.e. with
nanowires still attached to the silicon substrate on which they
were grown. Therefore a strong Raman peak from the silicon
substrate can be seen at 520 cm1 . Since the nanowires are
oriented nearly parallel to the incident laser beam, the nominal
scattering configuration is z(, )z . Selection rules predict
only the occurrence of EH 2 and A1 (LO) for this geometry. E2
H
1
is clearly pronounced at 487 cm with an FWHM of about
8 cm1 , while the assignment of the strong peak close to
the position of the LO modes is questionable, as discussed
above. For 532 nm excitation wavelength, the peak occurs
close to the reported A1 (LO) frequency at 586 cm1 , for
633 nm wavelength it is shifted closer to the frequency of
E1 (LO) at 593 cm1 . The nanowire morphology, which allows
that most of the light enters through and scatters from the
lateral side of the nanowire, could explain the observation of
the symmetry-forbidden E1 (LO) [14, 15], as well as the weak
occurrence of E1 (TO) (476 cm1 ). However, the peculiarity
of the LO mode in InN NWs, i.e. its symmetry-forbidden
occurrence with high intensity, is clearly shown by single NW
measurements, as we discuss in the following. The intensity
of the LO mode is strongly depending on the laser wavelength:
by changing the excitation wavelength from 532 to 633 nm,
the intensity of LO relative to EH 2 is roughly tripled. This
result is in agreement with the one reported by Kuball et al
for InN thin films [30]. A similar increase of the LO intensity
for longer excitation wavelength was also observed in Si-and
Mg-doped nanowire ensembles studied in this work. Such
a strong increase is hardly explicable by distinct penetration
depths. Moreover, the internal scattering of the excitation
light should be stronger for shorter wavelength and increases
the contribution of E1 (LO) to the LO peak [15]. This is
in contradiction to the experimental data in figure 1. The
most probable explanation is therefore a resonance effect at
a critical point of the electronic structure which enhances
scattering of polar modes by the Frohlich mechanism, as was
suggested in [30] and observed in other materials such as,
for example, in GaAs [31]. By decreasing the excitation
wavelength, a redshift of the Raman peaks can also be seen in
figure 1. This was constantly observed for undoped and doped
samples. Moreover, the energetic distance between EH 2 and LO
peaks is increased for longer excitation wavelengths. A local
heating induced by laser beam could explain a redshift of the
Raman peaks. For shorter wavelengths, stronger absorption
3
E O Schafer-Nolte et al
A1(TO) E1(TO) E2H A1(LO) E1(LO)
2.5
*
2.0
Intensity (a.u.)
1.5
200"nm
200 nm
1.0 633 nm
0.5
532 nm
0.0
400 450 500 550 600 650
Raman shift (1/cm)
Figure 1. Raman spectra of undoped InN nanowire ensembles
for 532 and 633 nm excitation wavelengths. The spectra are
normalized to the EH2 peak intensity and shifted for clarity. Black
dotted lines show Raman mode frequencies reported in the
literature [13]. The asterisk marks the Raman signal of the silicon
substrate. Inset is an SEM image of the as-grown NW sample.
and light trapping in NW ensembles, and thus more intense
heating, can be expected, even though the same incident
power of the laser beam was used. However, changing the
laser power within the measurement range used, no significant
change of the peak position was observed. A similar redshift
with photon energy was reported for InN films in [30] and
explained by the difference of the light penetration depth at
different wavelengths in the presence of an accumulation layer
with a very non-uniform distribution of the free carriers. To
fully understand these phenomena related to the wavelength
approaching a resonance condition in InN nanowires, further
theoretical and experimental efforts would be necessary.
The origin of the broad feature at 440 cm1 in the spectra
of figure 1 might be due to the PLP mode. On the other hand,
an assignment to the symmetry-forbidden A1 (TO) seems to be
reasonable due to the unusual light propagation in the nanowire
sample. The second-order spectrum of silicon also has a peak
in this spectral range [32], which complicates the evaluation
of this mode. We can conclude that the Raman spectra of
our as-grown samples are consistent with those reported in the
literature for InN NWs.
Typical results for undoped single nanowires are shown in
figure 2. Raman spectra and the related Rayleigh peak intensity
maps are presented for two wires with different orientations
relative to the laser polarization direction. The polarization
of the incident light is depicted by the arrow in the bottom
left corner of the map. The scattering geometry in these
experiments can be described by a combination of x(y, )x
and x(z, )x , while the contribution of the particular scattering
processes depends on the orientation of the nanowire. The
spectra in figure 2 are measured in different parts of the same
wire. The labels A and B in the maps denote the particular
origin of the spectra. The relative intensity of these peaks
varies from spectrum to spectrum and in some cases its position
does not correspond very well with the literature values. The
Nanotechnology 21 (2010) 315702
A1(TO) E1(TO) E2H
wire 1
1500
A
A trend, i.e. it is strongly pronounced in the spectra of wire 2 and
1000
B
B The NW shape influences the light penetration into
500
B and consequently the expected Raman scattering modes, are
Intensity (a.u.)
A example, in undoped GaN thin NWs, the Raman scattering is
0
wire 2
3000
B
B for TO and EH
A
A 2 phonon modes in figure 2. This result can
2000
1000 B
A
0
300 350 400 450 500
Raman shift (1/cm)
Figure 2. Raman spectra of undoped InN single nanowires for the
laser polarization quasi-perpendicular (wire 1) and parallel (wire 2)
to the wire direction. Black dotted lines show Raman mode
frequencies reported in the literature [13]. The insets show the
related Rayleigh peak intensity maps. The scale bar is 500 nm,
arrows denote the polarization direction of the incident laser light. A
and B mark the locations where the related spectra were acquired.
The spectra are shifted on the vertical axis for clarity.
fluctuation of the Raman spectra can be related to fluctuations
of NW sizes, doping and local strain, as well as to fluctuations
of the local thermal contact to the graphite substrate. The
length and diameter fluctuations of the investigated single NWs
reflect the size fluctuation of the as-grown NWs, but also,
during the preparation of single NW samples, breaking of
NWs and additional internal strain fluctuations might occur.
Additionally, the relative low spectral resolution of about
3 cm1 used for the acquisition of single NW spectra can
also affect the accuracy of the measurements. However, some
interesting trends can be clearly seen and are discussed below.
The Raman spectra of wire 1, which is oriented nearly
perpendicular to the laser polarization direction, should reveal
a major contribution of x(y, )x scattering processes, while
for wire 2 a significant component of the electric field
is oriented parallel to the wire axis and therefore should
cause predominantly scattering in the x(z, )x configuration.
Selection rules for wurtzite crystals predict the occurrence
of A1 (TO), EH 2 and E1 (TO) phonon modes for x(y, ) x
processes, while in x(z, )x geometry only A1 (TO) and
E1 (TO) are allowed [13].
Indeed, in agreement with the selection rules, wire 1
shows a pronounced EH 2 phonon mode, while it is only weakly
E O Schafer-Nolte et al
A1(LO) E1(LO) expressed in the spectra of wire 2. The reduction of the EH 2
scattering in wires with parallel orientation to the polarization
of the excitation light is a proof that the wires vertical axis is
parallel to the crystallographic c direction, as also shown by
HRTEM analysis [24]. The A1 (TO) mode exhibits a contrary
has a rather low intensity for wire 1.
the wire. If the NW diameter is much smaller than the
laser wavelength, the electromagnetic field inside the wire,
strongly reduced for polarization perpendicular to the wire. For
practically suppressed for perpendicular polarization [34]. In
contrast, in Raman spectra of InN NWs, the crystal orientation
selection rules dominate over the NW shape effect, as shown
be related to the high electron concentration with a surface
accumulation layer present in InN NWs, which influences
Raman scattering by changing the phenomena of the light
penetration into the wire, as well as the scattering process itself.
The peculiarity of the Raman scattering in InN NWs
is also reflected in the LO phonon scattering modes. All
single NW spectra show a very intense LO peak close to
the E1 (LO) mode independent of the nanowire orientation,
550 600 650
although both E1 (LO) and A1 (LO) are forbidden in x(, )x
geometry. This result implies that the interpretation given
in [14, 15] that the LO peak arises from the E1 (LO) mode
excited by light incident on lateral NW sides is questionable.
The intense excitation of the LO mode cannot be explained
only by deviations from the ideal scattering geometry in
the experimental set-up. The possible explanations of the
occurrence of the intense LO forbidden mode are discussed
at the end of the section based on published models and
simulations [16, 17].
The interaction between phonons and the electronic
subsystem of the sample can be influenced by varying the
free carrier concentration. To this end, different samples with
Mg and Si as dopants have been investigated. To study the
effect of Mg doping, two nominally p-type doped samples are
grown with Mg fluxes of 1 109 mbar and 3 109 mbar,
respectively.
Two representative Raman spectra obtained on single
nanowires of Mg-doped samples are presented in figure 3.
As already observed for the undoped wires, the spectra are
dominated by the forbidden LO mode. Both nanowires
are oriented nearly parallel to the laser polarization and
therefore show a strong A1 (TO), while E1 (TO) and EH 2 are
less pronounced. No significant change correlated with the
increase of the Mg fluxes can be found. However, compared
to the undoped nanowires, the spectra of the Mg-doped
nanowires exhibit sharper peaks with smaller FWHMs. This
could indicate that the crystal quality of the InN nanowires is
enhanced by the presence of magnesium during growth and
the background doping which produces additional disorder is
compensated.
A small Raman peak can be observed close to 400 cm1 ,
in some Raman spectra of single NWs. This is more frequently
4
Nanotechnology 21 (2010) 315702
A1(TO) E1(TO) E2H A1(LO)
-9
Mg BEP =3 10 mbar
1500
1000
Intensity (a.u.)
500
0 0
-9
1500 Mg BEP =1 10 mbar
1000
500
0 0
350 400 450 500 550
Raman shift (1/cm)
Figure 3. Raman spectra of Mg-doped InN nanowires with different
doping levels, acquired from the center of the wire. Black dotted
lines show Raman mode frequencies reported in the literature [13].
The insets show the related Rayleigh peak intensity maps. The scale
bar is 500 nm, arrows denote the polarization direction of the
incident laser light.
observed for Mg-doped NWs than for undoped ones, and is
systematically detected at higher energy in Raman spectra
of NW ensembles (figure 1). If this peak is not related to
specific defects in InN, a possible assignment is the low-energy
branch PLP of the LO phononplasmon coupled mode. The
energy position of this peak is slightly decreased by Mg doping
and increased by low Si doping (results not shown here),
supporting its PLP assignment. An electron concentration
value of 46 1018 cm3 can be evaluated from the PLP
peak position of about 400 cm1 (see, for example, [13] and a
more complex fit in [17]).
The effect of silicon doping on the Raman spectra of InN
NWs can be seen in figure 4. Two n-type doped samples grown
with Si fluxes of 1 109 and 5.8 109 mbar are studied.
The spectra of highly Si-doped NWs show sharp peaks at EH 2 for explaining the LO peak [14, 15] can be circumvented by
and A1 (TO) frequencies.
The sharpness of the EH 2 peak proves a high crystal
quality in spite of high doping. The most interesting feature
of the spectra in figure 4 is the LO phonon mode, which
exhibits a strong low-energy tail. Its intensity clearly increases
with Si doping. A similar asymmetric lineshape has been
observed in InN thin films with carrier concentrations n >
1020 cm3 [18, 33]. Thakur et al explained this feature
by the activation of the silent BH 1 mode due to disorder,
which practically covers in highly doped InN the scattering
of LO phonons in interaction with electronhole pairs [18].
Demangeot et al calculated theoretical LO lineshapes for
different light scattering processes and found a similar
asymmetric broadening for LO scattering by the forbidden
Frohlich mechanism in combination with wavevector non-
conservation [16]. Additionally, the Raman spectra of the
E O Schafer-Nolte et al
E1(LO) A1(TO) E1(TO) E2H A1(LO) E1(LO)
-9
Si BEP=5 .8 10 mbar
500
Intensity (a.u.)
-9
Si BEP=1 10 mbar
500
600 650 350 400 450 500 550 600 650
Raman shift (1/cm)
Figure 4. Raman spectra of Si-doped InN nanowires with different
doping levels, acquired from the center of the wire. Black dotted
lines show Raman mode frequencies reported in the literature [13].
The insets show the related Rayleigh peak intensity maps. The scale
bar is 500 nm, arrows denote the polarization direction of the
incident laser light.
highly doped wires reveal a fine structure of the asymmetric
LO band in the range of 480580 cm1 , which consists of
nearly equidistant peaks with a periodicity of about 20 cm1
2.5 meV. The origin of this fine structure is currently unknown
to us. It might be, for example, related to electron transitions
on localized states.
As can be seen in the presented results, Raman spectra
of single NWs show in many respects similar features as
InN nanowire ensembles. The investigation of single wires
shows fluctuations between wires from the same sample. We
observed variations in the LO lineshape for wires from the
lightly Si-doped sample, indicating fluctuations in the carrier
concentration from wire to wire. Additionally the speculation
about the propagation direction of the excitation light in the
as-grown nanowire sample due to scattering on different wires
single undoped NW investigations. As shown in this paper, a
strong LO scattering mode was observed in single NW spectra,
independent of the relative direction of the incident light
polarization, although these modes are symmetry-forbidden.
The observed reduction of the Raman scattering of
A1 (TO) and EH 2 modes for polarization of the incident light
perpendicular to the InN wire is a common result of the light
interaction with nanowires. However, the Raman phonon
scattering remains of significant intensity for all polarization
directions. This is in contrast with results on GaN NWs, for
which we have found that Raman phonon scattering is almost
suppressed for perpendicular polarization [34]. As shown in
the literature for InN films [16, 17] a more complex explanation
in which the selection rules are disregarded is necessary.
The multiple possible light scattering processes induced by
the high electron concentration with a strong contribution
5
Nanotechnology 21 (2010) 315702
of the accumulation layer at the wire surfaces can influence
the Raman spectra via electronphonon interaction and by
changing the light propagation path inside NWs. In [16] it is
shown by modeling that, for high electron concentration and
strong Landau damping, the scattering on density fluctuations
can dominate in the visible spectrum over Frohlich and
other mechanisms. A strong electric field in the surface
accumulation layer can also induce an enhancement, especially
of the forbidden modes, as suggested in [17]. Indeed, the
observation of a strong symmetry-forbidden LO scattering in
our single NW Raman experiments might deliver additional
evidence of the formation of a surface accumulation layer
on non-polar surfaces of InN NWs, already suggested by
photoluminescence and electric transport experiments [24, 25].
4. Conclusions
In conclusion, Raman studies on single InN nanowires showed
a strong polarization dependence of A1 (TO) and EH 2 phonon
modes in agreement with selection rules. Moreover, the
occurrence of an intense symmetry-forbidden LO mode was
observed for single wires. A similar LO mode was also
found in the Raman spectra of as-grown nanowire ensembles.
The observed strong excitation wavelength dependence of this
mode is pointing to a resonance with electronic transitions,
as suggested in the literature. The intensity enhancement at
longer excitation wavelength, as well as the deviation from
the expected symmetry found in single NW Raman spectra,
indicates that the observed LO peak needs a more complex
explanation in which the phonon interaction with the electronic
system including the surface accumulation layer is involved
and the symmetry selection rules are disregarded. The effect
of magnesium doping is a sharpening of the Raman peaks,
which indicates a good crystalline quality and reduction of the
background doping, while for silicon doping the LO phonon
develops an asymmetric lineshape with a pronounced low-
energy tail.
Acknowledgments
The authors gratefully acknowledge fruitful discussions and
suggestions by Professor H Luth. The authors thank also
K H Deussen for technical support. This work was financially
supported by the German Ministry of Education and Research
project EPHQUAM and performed under the auspices of
the US Department of Energy under contract no. DE-AC02-
98CH1-886.
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