FAN7371 High-Current High-Side Gate Drive IC

November 2009

FAN7371
High-Current High-Side Gate Drive IC
Features
! Floating Channel for Bootstrap Operation to +600V
! 4A/4A Sourcing/Sinking Current Driving Capability
! Common-Mode dv/dt Noise Canceling Circuit
! 3.3V and 5V Input Logic Compatible
! Output In-phase with Input Signal
! Under- Voltage Lockout for VBS
! 25V Shunt Regulator on VDD and VBS
! 8-Lead Small Outline Package (SOP)
Applications
! High-Speed Gate Driver
! Sustaine Switch Driver in PDP Application
! Energy-Recovery Circuit Switch Driver in
PDP Application
! High-Power Buck Converter
! Motor Drive Inverter
Description
The FAN7371 is a monolithic high-side gate drive IC,
which can drive high-speed MOSFETs and IGBTs that
operate up to +600V. It has a buffered output stage with
all NMOS transistors designed for high pulse current
driving capability and minimum cross-conduction.
Fairchilds high-voltage process and common-mode
noise canceling techniques provide stable operation of
the high-side driver under high dv/dt noise circum-
stances. An advanced level-shift circuit offers high-side
gate driver operation up to VS=-9.8V (typical) for
VBS=15V.
The UVLO circuit prevents malfunction when VBS is
lower than the specified threshold voltage.
The high-current and low-output voltage drop feature
makes this device suitable for sustaine switch driver and
energy recovery switch driver in the Plasma Display
Panel application, motor drive inverter, switching power
supply, and high-power DC-DC converter applications.

8-SOP

Ordering Information
Operating
Part Number Package Eco Status Packing Method
Temperature Range
FAN7371M(1) Tube
8-SOP -40C ~ 125C RoHS
FAN7371MX(1) Tape & Reel

Note:
1. These devices passed wave soldering test by JESD22A-111.

For Fairchilds definition of Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html.

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FAN7371 Rev. 1.0.2
 FAN7371 High-Current High-Side Gate Drive IC
Typical Application Diagrams

15V
DBOOT3 RBOOT3
VS
15V
FAN7371
RBOOT1 DBOOT1 8 VB VDD 1
Q3 R3
D3 7 HO IN 2 IN3
FAN7371
CBOOT3
R4 6 VS NC 3
1 VDD VB 8
L1
5 NC GND 4
IN1 2 IN HO 7
CBOOT1 D1 D2
3 NC VS 6 D4
R1
4 GND NC 5
DBOOT2 To Pannel
R2

Q1
FAN7371 FAN7371

1 VDD VB 8 8 VB VDD 1
R5 Q2 Q4 R7
IN2 2 IN HO 7 7 HO IN 2 IN4
CBOOT2
C1 3 NC VS 6 R6 6 VS NC 3 C3
R8
4 GND NC 5 5 NC GND 4

C2

Energy Recovery Circuit Part Sustain Drive Part

FAN7371 Rev.03

Figure 1. Floated Bidirectional Switch and Half-Bridge Driver: PDP application

15V VIN

RBOOT DBOOT

FAN7371
1 VDD VB 8
R1
PWM 2 IN HO 7
CBOOT R2 L1

C1 3 NC VS 6

4 GND NC 5 D1 C2 VOUT

FAN7371 Rev.01

Figure 2. Step-Down (Buck) DC-DC Converter Application

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FAN7371 Rev. 1.0.2 2
 FAN7371 High-Current High-Side Gate Drive IC
Internal Block Diagram

VDD 1 VDD 8 VB
25V

compensated gate driver

Shoot-through current
UVLO
GND 4

7 HO
GENERATOR
R

PULSE
NOISE R
IN 2 CANCELLER S 25V
Q
110K

6 VS
Pins 3 and 5 are no connection.

FAN7371 Rev.04

Figure 3. Functional Block Diagram

Pin Configuration

VDD 1 8 VB

IN 2 7 HO
FAN7371
NC 3 6 VS

GND 4 5 NC

FAN7371 Rev.01

Figure 4. Pin Configuration (Top View)

Pin Definitions
Pin # Name Description
1 VDD Supply Voltage
2 IN Logic Input for High-Side Gate Driver Output
3 NC No Connection
4 GND Ground
5 NC No Connection
6 VS High-Voltage Floating Supply Return
7 HO High-Side Driver Output
8 VB High-Side Floating Supply

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FAN7371 Rev. 1.0.2 3
 FAN7371 High-Current High-Side Gate Drive IC
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. TA=25C unless otherwise specified.

Symbol Characteristics Min. Max. Unit

VS High-Side Floating Offset Voltage VB-VSHUNT VB+0.3 V
VB High-Side Floating Supply Voltage(2) -0.3 625.0 V
VHO High-Side Floating Output Voltage VS-0.3 VB+0.3 V
(2)
VDD Low-Side and Logic Supply Voltage -0.3 VSHUNT V
VIN Logic Input Voltage -0.3 VDD+0.3 V
dVS/dt Allowable Offset Voltage Slew Rate 50 V/ns
PD Power Dissipation(3, 4, 5) 0.625 W
JA Thermal Resistance 200 C/W
TJ Junction Temperature -55 +150 C
TSTG Storage Temperature -55 +150 C
TA Operating Ambient Temperature -40 +125 C

Notes:
2 This IC contains a shunt regulator on VDD and VBS with a normal breakdown voltage of 25V. Please note that this
supply pin should not be driven by a low-impedance voltage source greater than the VSHUNT specified in the
Electrical Characteristics section
3 Mounted on 76.2 x 114.3 x 1.6mm PCB (FR-4 glass epoxy material).
4 Refer to the following standards:
JESD51-2: Integral circuits thermal test method environmental conditions, natural convection, and
JESD51-3: Low effective thermal conductivity test board for leaded surface mount packages.
5 Do not exceed power dissipation (PD) under any circumstances.

Recommended Operating Conditions

The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to absolute maximum ratings.

Symbol Parameter Min. Max. Unit

VBS High-Side Floating Supply Voltage VS+10 VS+20 V
VS High-Side Floating Supply Offset Voltage 6-VDD 600 V
VHO High-Side Output Voltage VS VB V
VIN Logic Input Voltage GND VDD V
VDD Supply Voltage 10 20 V

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FAN7371 Rev. 1.0.2 4
 FAN7371 High-Current High-Side Gate Drive IC
Electrical Characteristics
VBIAS(VDD, VBS)=15.0V, TA = 25C, unless otherwise specified. The VIN and IIN parameters are referenced to GND.
The VO and IO parameters are relative to VS and are applicable to the respective output HO.
Symbol Characteristics Test Condition Min. Typ. Max. Unit
POWER SUPPLY SECTION
IQDD Quiescent VDD Supply Current VIN=0V or 5V 25 70 A
IPDD Operating VDD Supply Current fIN=20KHz, No Load 35 100 A
BOOTSTRAPPED SUPPLY SECTION
VBS Supply Under-Voltage Positive Going
VBSUV+ VBS=Sweep 8.2 9.2 10.2 V
Threshold Voltage
VBS Supply Under-Voltage Negative Going
VBSUV- VBS=Sweep 7.5 8.5 9.5 V
Threshold Voltage
VBS Supply Under-Voltage Lockout
VBSHYS VBS=Sweep 0.7 V
Hysteresis Voltage
ILK Offset Supply Leakage Current VB=VS=600V 10 A
IQBS Quiescent VBS Supply Current VIN=0V or 5V 60 120 A
CLOAD=1nF, fIN=20KHz, rms
IPBS Operating VBS Supply Current 1.0 2.8 mA
Value
SHUNT REGULATOR SECTION
V and VBS Shunt Regulator Clamping
VSHUNT DD ISHUNT=5mA 24 25 V
Voltage
INPUT LOGIC SECTION
VIH Logic 1 Input Voltage 2.5 V
VIL Logic 0 Input Voltage 0.8 V
IIN+ Logic Input High Bias Current VIN=5V 45 70 A
IIN- Logic Input Low Bias Current VIN=0V 2 A
RINInput Pull-down Resistance 70 110 K
GATE DRIVER OUTPUT SECTION
VOH High Level Output Voltage (VBIAS - VO) No Load 1.2 V
VOL Low Level Output Voltage No Load 30 mV
IO+ Output High, Short-Circuit Pulsed Current(6) VHO=0V, VIN=5V, PW 10s 3.0 4.0 A
IO- Output Low, Short-Circuit Pulsed Current(6) VHO=15V,VIN=0V, PW 10s 3.0 4.0 A
Allowable Negative VS pin Voltage for IN
VS -9.8 -7.0 V
Signal Propagation to HO
Note:
6 These parameters guaranteed by design.

Dynamic Electrical Characteristics

VDD=VBS=15V, GND=0V, CLOAD=1000pF, TA=25C, unless otherwise specified.

Symbol Parameter Conditions Min. Typ. Max. Unit

ton Turn-on Propagation Delay Time VS=0V 150 210 ns
toff Turn-off Propagation Delay Time VS=0V 150 210 ns
tr Turn-on Rise Time 25 50 ns
tf Turn-off Fall Time 15 40 ns

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FAN7371 Rev. 1.0.2 5
 FAN7371 High-Current High-Side Gate Drive IC
Typical Characteristics

250 250

200 200
tON [ns]

tOFF [ns]
150 150

100 100

50 50

0 0
-40 -20 0 20 40 60 80 100 120 -40 -20 0 20 40 60 80 100 120
Temperature [C] Temperature [C]

Figure 5. Turn-on Propagation Delay Figure 6. Turn-off Propagation Delay

vs. Temperature vs. Temperature

50 50

40 40

30 30
tR [ns]

tF [ns]

20 20

10 10

0 0
-40 -20 0 20 40 60 80 100 120 -40 -20 0 20 40 60 80 100 120
Temperature [C] Temperature [C]

Figure 7. Turn-on Rise Time vs. Temperature Figure 8. Turn-off Fall Time vs. Temperature

100 2.0

80
1.5
IPBS [mA]
IPDD [A]

60
1.0
40

0.5
20

0 0.0
-40 -20 0 20 40 60 80 100 120 -40 -20 0 20 40 60 80 100 120
Temperature [C] Temperature [C]

Figure 9. Operating VDD Supply Current Figure 10. Operating VBS Supply Current
vs. Temperature vs. Temperature

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FAN7371 Rev. 1.0.2 6
 FAN7371 High-Current High-Side Gate Drive IC
Typical Characteristics (Continued)

10.0 9.5

9.5 9.0

VBSUV- [V]
VBSUV+ [V]

9.0 8.5

8.5 8.0

8.0 7.5
-40 -20 0 20 40 60 80 100 120 -40 -20 0 20 40 60 80 100 120
Temperature [C] Temperature [C]

Figure 11. VBS UVLO+ vs. Temperature Figure 12. VBS UVLO- vs. Temperature

3.0 3.0

2.5 2.5

2.0 2.0
VIH [V]

VIL [V]

1.5 1.5

1.0 1.0

0.5 0.5

0.0 0.0
-40 -20 0 20 40 60 80 100 120 -40 -20 0 20 40 60 80 100 120
Temperature [C] Temperature [C]

Figure 13. Logic High Input Voltage vs. Temperature Figure 14. Logic Low Input Voltage vs. Temperature

280 1.50

240
1.25
200
1.00
RIN [k]

VOH [V]

160
0.75
120

80 0.50

40 0.25

0 0.00
-40 -20 0 20 40 60 80 100 120 -40 -20 0 20 40 60 80 100 120
Temperature [C] Temperature [C]

Figure 15. Input Pull-Down Resistance Figure 16. High-Level Output Voltage
vs.Temperature. vs. Temperature

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FAN7371 Rev. 1.0.2 7
 FAN7371 High-Current High-Side Gate Drive IC
Typical Characteristics (Continued)

6.5 6.5

6.0 6.0

5.5 5.5

5.0 5.0
IO+ [A]

IO- [A]
4.5 4.5

4.0 4.0

3.5 3.5

3.0 3.0

2.5 2.5
-40 -20 0 20 40 60 80 100 120 -40 -20 0 20 40 60 80 100 120
Temperature [C] Temperature [C]

Figure 17. Output High, Short-Circuit Pulsed Current Figure 18. Output Low, Short-Circuit Pulsed Current
vs. Temperature vs. Temperature

7 7

6 6

5 5
IO- [A]
IO+ [A]

4 4

3 3

2 2
10 12 14 16 18 20 10 12 14 16 18 20
VBS [V] VBS [V]

Figure 19. Output High, Short-Circuit Pulsed Current Figure 20. Output Low, Short-Circuit Pulsed Current
vs. Supply Voltage vs. Supply Voltage

80 120

100
60
80 -40C
-40C
IQDD [A]

IQBS [A]

25C
40 60
25C 125C
40
20 125C
20

0 0
10 12 14 16 18 20 10 12 14 16 18 20
Supply Voltage [V] Supply Voltage [V]

Figure 21. Quiescent VDD Supply Current Figure 22. Quiescent VBS Supply Current
vs. Supply Voltage vs. Supply Voltage

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FAN7371 Rev. 1.0.2 8
 FAN7371 High-Current High-Side Gate Drive IC
Switching Time Definitions
Timing Diagram

15V

50% 50%
VDD VB
10nF 10F 10F 0.1F
15V IN
VS
ton tr toff tf
GND
FAN7371
1000pF

90% 90%

IN HO

OUT 10% 10%

(A) (B)

Figure 23. Switching Time Test Circuit and Waveform Definitions

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FAN7371 Rev. 1.0.2 9
 FAN7371 High-Current High-Side Gate Drive IC
Physical Dimensions

5.00
4.80 A
0.65
3.81
8 5
B

6.20 1.75
5.80 4.00 5.60
3.80

PIN ONE 1 4
INDICATOR
1.27
(0.33) 1.27
0.25 M C B A
LAND PATTERN RECOMMENDATION

0.25 SEE DETAIL A

0.10
0.25
1.75 MAX C
0.19
0.51 0.10 C

0.33 OPTION A - BEVEL EDGE

0.50 x 45
0.25
R0.10 GAGE PLANE

R0.10 0.36
OPTION B - NO BEVEL EDGE

NOTES: UNLESS OTHERWISE SPECIFIED

8
0 A) THIS PACKAGE CONFORMS TO JEDEC
MS-012, VARIATION AA, ISSUE C,
0.90 SEATING PLANE B) ALL DIMENSIONS ARE IN MILLIMETERS.

0.406 (1.04) C) DIMENSIONS DO NOT INCLUDE MOLD

FLASH OR BURRS.
DETAIL A D) LANDPATTERN STANDARD: SOIC127P600X175-8M.
SCALE: 2:1 E) DRAWING FILENAME: M08AREV13

Figure 24. 8-Lead Small Outline Package (SOP)

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchilds worldwide terms and conditions,
specifically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductors online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/.

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FAN7371 Rev. 1.0.2 10
 FAN7371 High-Current High-Side Gate Drive IC

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FAN7371 Rev. 1.0.2 12