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One-dimensional ( I D ) Subbands
Di,,(s) = --
k -
- - i z , r z , ~ [ rn ]lb -
--4L for 6 > cSi
dk dE 2n 2fi2(&- E , ~ ) hvif (15)
=0 for E < E , ~
The first factor of two in the middle expression is due to spin degeneracy and
the second from incltiding both positivc and ncgativc values of k. I11 thc right
is the velocity of the electron in the i,j suhhand with kinetic
expression, v , , ~
energy E - E ~ ~Note
. that the density of states diverges as (E - E,,~)-'~' at each
subband threshold. These are called van Hove singularities. This behavior
stands in contrast to three dimensions, where D(E) goes to zero at low energies