TPC8114

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS)

TPC8114
Lithium Ion Battery Applications
Unit: mm
Notebook PC Applications
Portable Equipment Applications

Small footprint due to small and thin package

Low drain-source ON resistance: RDS (ON) = 3.1 m (typ.)
High forward transfer admittance: |Yfs| = 47 S (typ.)
Low leakage current: IDSS = 10 A (max) (VDS = 30 V)
Enhancement mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25C)

Characteristics Symbol Rating Unit

JEDEC
Drain-source voltage VDSS 30 V
JEITA
Drain-gate voltage (RGS = 20 k) VDGR 30 V
Gate-source voltage VGSS 20 V TOSHIBA 2-6J1B
DC (Note 1) ID 18 Weight: 0.080 g (typ.)
Drain current A
Pulse (Note 1) IDP 72
Drain power dissipation (t = 10 s)
PD 1.9 W
(Note 2a)
Circuit Configuration
Drain power dissipation (t = 10 s)
PD 1.0 W
(Note 2b) 8 7 6 5
Single pulse avalanche energy
EAS 211 mJ
(Note 3)
Avalanche current IAR 18 A
Repetitive avalanche energy
EAR 0.19 mJ
(Note 2a) (Note 4)
Channel temperature Tch 150 C
Storage temperature range Tstg 55 to 150 C 1 2 3 4

Note: (Note 1), (Note 2), (Note 3) and (Note 4): See the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Please handle with caution.

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Thermal Characteristics

Characteristics Symbol Max Unit

Thermal resistance, channel to ambient

Rth (ch-a) 65.8 C/W
(t = 10 s) (Note 2a)
Thermal resistance, channel to ambient
Rth (ch-a) 125 C/W
(t = 10 s) (Note 2b)

Marking (Note 5)

TPC8114 Part No. (or abbreviation code)

Lot No.

A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.

Note 1: Ensure that the channel temperature does not exceed 150C.

Note 2:
(a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)

FR-4 FR-4
25.4 25.4 0.8 25.4 25.4 0.8
(Unit: mm) (Unit: mm)

(a) (b)

Note 3: VDD = 24 V, Tch = 25C (initial), L =500H, RG = 25 , IAR = 18 A

Note 4: Repetitive rating; pulse width limited by maximum channel temperature

Note 5: on lower left of the marking indicates Pin 1.

Weekly code: (Three digits)

Week of manufacture
(01 for the first week of a year: sequential number up to 52 or 53)

Year of manufacture
(The last digit of a year)

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Electrical Characteristics (Ta = 25C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS VGS = 16 V, VDS = 0 V 10 A

Drain cut-OFF current IDSS VDS = 30 V, VGS = 0 V 10 A
V (BR) DSS ID = 10 mA, VGS = 0 V 30
Drain-source breakdown voltage V
V (BR) DSX ID = 10 mA, VGS = 20 V 15
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 0.8 2.0 V
VGS = 4 V, ID = 9 A 5.2 6.8
Drain-source ON resistance RDS (ON) m
VGS = 10 V, ID = 9 A 3.1 4.5
Forward transfer admittance |Yfs| VDS = 10 V, ID = 9 A 23.5 47 S
Input capacitance Ciss 7480
Reverse transfer capacitance Crss VDS = 10 V, VGS = 0 V, f = 1 MHz 1320 pF

Output capacitance Coss 1460

Rise time tr 0V 25
VGS ID = 9 A
10 V VOUT
Turn-ON time ton 36

RL = 1.7
Switching time ns

4.7
Fall time tf 235

VDD
15 V
Turn-OFF time toff Duty < 625
= 1%, tw = 10 s

Total gate charge

Qg 180
(gate-source plus gate-drain)
VDD 24 V, VGS = 10 V, nC
Gate-source charge 1 Qgs1 ID = 18 A 10
Gate-drain (miller) charge Qgd 60

Source-Drain Ratings and Characteristics (Ta = 25C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Drain reverse
Pulse (Note 1) IDRP 72 A
current
Forward voltage (diode) VDSF IDR = 18 A, VGS = 0 V 1.2 V

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ID VDS ID VDS
20 50
2.8 Common source 4 3 2.8
4
Ta = 25C
3 2.6 Pulse test 10
16 40 8
10 Common source
6

(A)
(A)

8 2.6 Ta = 25C
Pulse test
12

ID
ID

30
2.4

Drain current
Drain current

2.4
6
8 20

2.2 2.2
4 10

VGS = 2 V VGS = 2 V

0 0
0 0.2 0.4 0.6 0.8 1.0 0 1 2 3 4 5

Drain-source voltage VDS (V) Drain-source voltage VDS (V)

ID VGS VDS VGS

50 0.5
Common source Common source
VDS = 10 V Ta = 25C
Pulse test Pulse test
(V)

40 0.4
(A)

VDS
ID

30 0.3
Drain-source voltage
Drain current

20 0.2

25
4.5
10 0.1 9
100 ID = 18 A

Ta = 55C
0 0
0 1 2 3 4 5 0 4 8 12 16 20

Gate-source voltage VGS (V) Gate-source voltage VGS (V)

|Yfs| ID RDS (ON) ID

100 100
(S)
Forward transfer admittance Yfs

Ta = 55C
Drain-source ON resistance

25
10 10
RDS (ON) (m)

VGS = 4 V
100

10

1 1

Common source Common source

VDS = 10 V Ta = 25C
Pulse test Pulse test
0.1 0.1
0.1 1 10 100 0.1 1 10 100

Drain current ID (A) Drain current ID (A)

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RDS (ON) Ta IDR VDS

20 100
Common source
10
Pulse test 3

Drain reverse current IDR (A)

Drain-source ON resistance

15 5
10
RDS (ON) (m)

10 1
ID = 18 A, 9 A, 4.5 A VGS = 0 V

1
VGS = 4 V
5

Common source
ID = 18 A, 9 A, 4.5 A Ta = 25C
10 V Pulse test
0 0.1
80 40 0 40 80 120 160 0 0.2 0.4 0.6 0.8 1.0 1.2

Ambient temperature Ta (C) Drain-source voltage VDS (V)

Capacitance VDS Vth Ta

100000 2.0
Common source
VDS = 10 V
Vth (V)

1.6 ID = 1 mA
Pulse test
(pF)

Ciss
10000
C

Gate threshold voltage

1.2
Capacitance

Coss

1000 0.8
Common source Crss
VGS = 0 V
f = 1 MHz 0.4
Ta = 25C
100
0.1 1 10 100
0
80 40 0 40 80 120 160
Drain-source voltage VDS (V)
Ambient temperature Ta (C)

PD Ta Dynamic input/output characteristics

2.0 30 30
(1) Device mounted on a Common source
(1) glass-epoxy board (a)
(Note 2a) VDD = 24 V ID = 13 A
(W)

(V)

VGS (V)

1.6 (2) Device mounted on a Ta = 25C

glass-epoxy board (b) Pulse test
VDS
PD

VDS

(Note 2b)
20 20
t = 10 s
Drain power dissipation

1.2
Drain-source voltage

Gate-source voltage

(2)
12
12
0.8
10 6 10
6 VDD = 24 V
0.4

VGS

0 0 0
0 40 80 120 160 200 0 40 80 120 160 200 240

Ambient temperature Ta (C) Total gate charge Qg (nC)

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rth tw
1000
(1) Device mounted on a glass-epoxy board (a)
(Note 2a)
(2)
(2) Device mounted on a glass-epoxy board (b)

Normalized transient thermal impedance

(Note 2b)
t = 10 s (1)
rth (C/W) 100

10

Single pulse

0.1
0.001 0.01 0.1 1 10 100 1000

Pulse width tw (S)

Safe operating area

100

1 ms*
ID max (pulse) *
10 ms*
10
(A)
ID
Drain current

0.1
* Single pulse
Ta = 25C
Curves must be derated
linearly with increase in
temperature. VDSS max
0.01
0.01 0.1 1 10 100

Drain-source voltage VDS (V)

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RESTRICTIONS ON PRODUCT USE 030619EAA

The information contained herein is subject to change without notice.

The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability
Handbook etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customers own risk.
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.

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