2SK1934

Silicon N-Channel MOS FET

Application

High speed power switching

Features

Low onresistance
High speed switching
No secondary breakdown
Suitable for Switching regulator

Outline

TO-3P

G 1
2
3
1. Gate
2. Drain
(Flange)
S
3. Source
2SK1934

Absolute Maximum Ratings (Ta = 25C)

Item Symbol Ratings Unit
Drain to source voltage VDSS 1000 V
Gate to source voltage VGSS 30 V
Drain current ID 8 A
1
Drain peak current I D(pulse)* 24 A
Body to drain diode reverse drain current I DR 8 A
2
Channel dissipation Pch* 150 W
Channel temperature Tch 150 C
Storage temperature Tstg 55 to +150 C
Notes 1. PW 10 s, duty cycle 1 %
2. Value at Tc = 25C

2
 2SK1934

Electrical Characteristics (Ta = 25C)

Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown V(BR)DSS 1000 V I D = 10 mA, VGS = 0
voltage
Gate to source breakdown V(BR)GSS 30 V I G = 100 A, VDS = 0
voltage
Gate to source leak current I GSS 10 A VGS = 25 V, VDS = 0
Zero gate voltage drain current I DSS 250 A VDS = 800 V, VGS = 0
Gate to source cutoff voltage VGS(off) 2.0 3.0 V I D = 1 mA, VDS = 10 V
Static drain to source on state RDS(on) 1.2 1.6 ID = 4 A
resistance VGS = 10 V*1
Forward transfer admittance |yfs| 4 6 S ID = 4 A
VDS = 20 V*1
Input capacitance Ciss 2690 pF VDS = 10 V
Output capacitance Coss 920 pF VGS = 0
Reverse transfer capacitance Crss 375 pF f = 1 MHz
Turn-on delay time t d(on) 35 ns ID = 4 A
Rise time tr 135 ns VGS = 10 V
Turn-off delay time t d(off) 300 ns RL = 7.5
Fall time tf 205 ns
Body to drain diode forward VDF 0.9 V I F = 8 A, VGS = 0
voltage
Body to drain diode reverse t rr 1600 s I F = 8 A, VGS = 0,
recovery time diF / dt = 100 A / s
Note 1. Pulse Test

3
2SK1934

Power vs. Temperature Derating Maximum Safe Operation Area

150 50
30

10
Channel Dissipation Pch (W)

ea
ar

s
n)
Drain Current I D (A)

(o
R his
10

10
DS
by t

0
d in

PW

s
ite tion
100

1
=

m
lim ra
3

10
DC

s
is pe

m
O

s
pe

(1
ra
1

sh
tio
n

ot
50

(T

)
c=
0.3

25
C
)
Ta = 25C
0.1
0.05
0 50 100 150 1 3 10 30 100 300 1000
Case Temperature Tc (C) Drain to Source Voltage VDS (V)

Typical Output Characteristics Typical Transfer Characteristics

10 10
10 V 8V Pulse Test
8 Pulse Test
8
VDS = 20 V
Drain Current I D (A)

Drain Current I D (A)

5V
6 6

4 4 Tc = 25C
4V
2 2 75C 25C
VGS = 3.5 V

0 10 20 30 40 50 0 2 4 6 8 10
Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V)

4
 2SK1934

Drain to Source Saturation Voltage Static Drain to Source on State

vs. Gate to Source Voltage Resistance vs. Drain Current
1.0 50
Drain to Source Saturation Voltage

Static Drain to Source on State

Pulse Test Pulse Test

Resistance R DS(on) ( )
0.8 20

5A
VDS (on) (V)

10
0.6
5
0.4

2A 2
0.2 VGS = 10 V
ID= 1 A 1

0.5
0 4 8 12 16 20 0.2 0.5 1 2 5 10 20
Gate to Source Voltage VGS (V) Drain Current I D (A)

Static Drain to Source on State Forward Transfer Admittance

Resistance vs. Temperature vs. Drain Current
5 50
Forward Transfer Admittance
Static Drain to Source on State

Pulse Test Pulse Test

Resistance R DS (on) ( )

4 20
VDS = 20 V
10
3
ID = 5 A 2A Tc = 25C
|yfs | (S)

5
2 1A 25C 75C
2
1
1

0 0.5
40 0 40 80 120 160 0.1 0.2 0.5 1 2 5 10
Case Temperature TC (C) Drain Current I D (A)

5
2SK1934

Body to Drain Diode Reverse Typical Capacitance

Recovery Time vs. Drain to Source Voltage
5000 10000
Reverse Recovery Time t rr (ns)

di/dt = 100 A/ s, VGS = 0

Ciss
2000 Ta = 25C

Capacitance C (pF)
1000 1000
Coss
500
Crss

200 100

100 VGS = 0 V
f = 1 MHz
50 10
0.2 0.5 1 2 5 10 20 0 10 20 30 40 50
Reverse Drain Current I DR (A) Drain to Source Voltage VDS (V)

Dynamic Input Characteristics Switching Characteristics

1000 20 500
td(off)
VGS
Drain to Source Voltage VDS (V)

Gate to Source Voltage VGS (V)

VDD = 250 V tf
800 16 200
400 V
Switching Time t (ns)

600 V tr
100
600 12
VDS ID = 8 A
50
td(on)
400 8
20
200 VDD = 250 V 4
10 VGS = 10 V, VDD =: .30 V
400 V PW = 5 s, duty > =1%
600 V
0 5
0 40 80 120 160 200 0.1 0.2 0.5 1 2 5 10
Gate Charge Qg (nc) Drain Current I D (A)

6
 2SK1934

Reverse Drain Current vs.

Source to Drain Voltage
10

I DR (A)
Pulse Test
8

Reverse Drain Current

6

2 VGS = 10 V 0, 5 V

0 0.2 0.4 0.6 0.8 1.0

Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance S (t)

Normalized Transient Thermal Impedance vs. Pulse Width

3

D=1 TC = 25C
1.0
0.5

0.3 0.2
0.1 chc (t) = S (t) chc
0.1 chc = 0.83C/W, TC = 25C
0.05
PDM
0.02
0.03 e D = PW
0.01 t Puls PW T
S ho T
1
0.01
10 100 1m 10 m 100 m 1 10
Pulse Width PW (s)

7
2SK1934

Switching Time Test Circuit

Waveforms
Vin Monitor
90%
Vout Monitor

D.U.T. Vin 10%

RL
10% 10%
Vout
Vin 50
10 V VDD
.
=. 30 V 90% 90%
td (on) tr td (off) tf

8
 Unit: mm

5.0 0.3
15.6 0.3 4.8 0.2
3.2 0.2 1.5

1.0
0.5

19.9 0.2
14.9 0.2

0.3
2.0
1.6

1.4 Max 2.0

2.8
18.0 0.5

1.0 0.2 0.6 0.2

3.6 0.9
1.0

5.45 0.5 5.45 0.5

Hitachi Code TO-3P
JEDEC
EIAJ Conforms
Weight (reference value) 5.0 g
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