Experiment No.

Name: Shubham Birange Roll No: 160070014

Batch: Tuesday Table No: 11
Exp Date: 26/09/2017
Name of TA/RA: Jeffin

PART 1

1. Plot a graph of ID v/s VGS on a linear scale.

ID V/s VGS
8.00E-04

7.00E-04

6.00E-04

5.00E-04
ID (in A)

4.00E-04

3.00E-04

2.00E-04

1.00E-04

0.00E+00
0 1 2 3 4 5 6
VGS (in V)
2. Extrapolate the linear portion of the plot as shown below to find the intercept on the VGS
axis. This will give you the threshold voltage VTN .

Linear portion of ID V/s VGS

3.00E-04
y = 2.972E-04x - 4.376E-04
2.50E-04

2.00E-04
ID (in A)

1.50E-04

1.00E-04

5.00E-05

0.00E+00
1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5
VGS (in V)

From the plot we can see that the intercept on VGS = VTN = 4.376/2.972 = 1.473 V

3. Also compute the transconductance gm = ID /VGS . At what value of VGS is the

gm maximum?
Ans.

gm vs VGS
3.50E-04

3.00E-04

2.50E-04
gm (in -1)

2.00E-04

1.50E-04

1.00E-04

5.00E-05

0.00E+00
0 1 2 3 4 5 6
VGS (in V)

Maximum gm = 3.32E-4 at VGS = 1.8485 V. But theoretically it should be at VTN.

4. Calculate the linear region resistance ro and plot it as a function of VGS VTN .

r0 v/s VGS-VTN
1.20E+04

1.00E+04

8.00E+03
r0 (in )

6.00E+03

4.00E+03

2.00E+03

0.00E+00
0 0.5 1 1.5 2 2.5 3 3.5 4
VGS-VTN

5. Calculate the subthreshold slope (below VTN ) SS = (ln ID /VGS )1 in units mV/decade.
Ans.

Subthreshold Plot of ln(ID) v/s VGS

-8
1 1.1 1.2 1.3 1.4 1.5 1.6 1.7
-9

-10
ln(ID) (ID in A)

-11
y = 11.84x - 29.02
-12

-13

-14

-15

-16

-17
VGS (in V)

SS = (ln ID /VGS )1 = 11.84-1 V/decade = 84.46 mV/decade

From the ID-VDS data in Part 2:

1. Plot a graph of ID v/s VDS on a linear scale. For each value of VGS , you have one set of ID-
VDS data.

ID v/s VDS
2.5E-03

2.0E-03

1.5E-03
ID (in A)

Vgs=2.5 V

Vgs=3
1.0E-03
Vgs=3.5

5.0E-04

0.0E+00
0 1 2 3 4 5 6
VDS (in V)

2. From the slope of the linear portion of the graph, calculate the output drain-source
resistance ro at VDS = 5 V for different values of VGS as
slope = 1/ro = ID/VDS at VGS
Ans.

Saturation Region of ID v/s VDS

2.5E-03

y = 2.027E-05x + 1.974E-03
2.0E-03

y = 1.212E-05x + 1.278E-03 Vgs=2.5 V

1.5E-03
ID (in A)

Vgs=3
1.0E-03
y = 6.572E-06x + 6.618E-04

5.0E-04 Vgs=3.5

0.0E+00
0 1 2 3 V)
VDS (in 4 5 6
 VGS (in V) Slope Ro = 1/slope (in )
2.5 6.57210-6 1.522105
3 1.21210-5 8.2104
3.5 2.02710-5 4.933104

3. Extrapolate the linear portion of the graph to find the intercept on the VDS axis. This will
give you the Early Voltage VA.
Ans.

VGS (in V) Slope Intercept VA = intercept/slope

2.5 6.57210-6 6.61810-3 100.699
3 1.21210-5 1.27810-2 105.445
3.5 2.02710-5 1.97410-1 97.385
Average VA 101.1763 V

From the ID-VGS data in Part 3:

Plot a graph of ID v/s VGS on a linear scale. Comment on the nature of the plot.
Ans. The increase in VDS, beyond (VGS Vt) does not result in significant increase in ID due to
pinch-off. The device is said to operate in saturation region. At the boundary i.e. at
VDS = VGS - Vt , drain current is given by,

In saturation region, ID has a square relationship with VGS and ideally independent of VDS, i.e. at
constant VGS, if VDS is increased further then ID should remain constant.

ID V/s VGS ID V/s VGS

0.006 0.08
0.005 0.07
0.06
ID (ID is in A)

0.004
ID (in A)

0.05
0.003
0.04
0.002 0.03

0.001 0.02
0.01
0
0 1 2 3 4 5 6 0
0 2 4 6
VGS (in V) VGS (in V)
From Part 4:

You already have the small-signal voltage gain Av , which is given by (refer the small signal
model)
|Av| = gmRD
Since you already know |Av | and RD, you can easily calculate the transconductance gm.
Ans.

|Av| = 118/88 = 1.341

Since VDS = 5 V and VGS = 2 V and in saturation region we know RD = 1.522105
So, gm = 1.341/1.522105 = 8.81104 -1.
1. Find out the effect on the threshold voltage of the NMOS, if
a. Positive Body voltage is applied.
b. Negative Body voltage is applied.

2. Subthreshold slope is a key metric for any switching device. Why?

3. The linear region of the ID VGS curve is not perfectly linear. Its slope increases first and
decreases after attaining a peak value. For such a case, find out an accurate method to
calculate the threshold voltage.

4. Given the ID VGS characteristics in saturation, how will you find the threshold voltage?
Ans. In saturation region drain current is given by,
iD = K(VGS Vt)2
So, if we can plot iD v/s VGS the x-intercept should give us the threshold voltage