MOSFET TURN-ON SWITCHING TIME

b. A power MOSFET drives a clamped inductive load in the circuit shown

in FIGURE Q2b (i). The drain current, Id, is conducting during the turn-
off of the MOSFET. The gate resistance, RG, is used to control the level
of gate current, IG, for the switching operation. The switching gate drive
amplitude, VG, is 10 V whilst the input dc voltage, Vdc, is 400 V. Static
characteristics for the MOSFET is shown in FIGURE Q2b(ii). The gate
threshold voltage, VTH, is found to be 3.0 V. FIGURE Q2b (iii) gives
data relating the gate-source voltage, Vgs, to level gate charge, QG, for
the switching transition.

i. Sketch the waveforms of gate voltage, VG, gate current, IG,

drain voltage, VD, and drain current, ID, for the turn-on and
turn-off transitions of MOSFET using the graph paper.
[8 marks]

ii. Estimate the delay time, td, voltage fall time, trf, and
current rise time, tri, for the turn-on transition.
[6 marks]

Id

IG

FIGURE Q2b(i) : Clamped inductive load circuit

FIGURE Q2b(ii) : MOSFET static characteristics

FIGURE Q2b(iii) : Vgs to QG data

b) ii) [6 marks]

Turn-on delay time:

Equivalent circuit:

Ci may be estimated from the gate charge data: for which the relationship is linear from 0
to 10 nC of charge or from 0 to 7 V of Vgs. And hence Ci = Q/V is the slope of the line
we can take two points at the origin (0,0) and at the end (10,7). From there we can
compute the slope and hence capacitance to calculate time constant ()

Ci = Q/V = (10-0nC)/(7-0V) = 1.43 nF, (1)

Vgs = 3 V, Vpulse = 10 V, Rg = 33 ohm
Vgs = 10 (1 exp -t/RgCi)
=> 3 = 10 -10 e [-t/47.19n] (1)
10 e [-t/66n] = 7
e [-t/66n] = 0.7
-t/66n = ln [0.7]
td = 66n x 0.3567 = 16.83 ns

Current rise time:

The delay time + the rise time = the time taken for Vgs to reach 7V from 3V (referring
from 0V because u are adding td + tri)

Using Vgs = 7 V, Vpulse = 10 V

7 = 10 - 10 e [-(td + tri)/RgCi]
7 = 10 10 e [-(16.83 n + tri)/47.19n] (1)
10 e [-(23.54 n + tri)/47.19n] = 3
-(td + tri) / RgCi = ln (3/10)
23.54 + tri = 56.82 ns
tri = 56.82 16.83 = 40 ns (1)

Voltage fall time:

Qg = ig tfv
Where ig is the gate current at Vgs = 7V
Ig = (10 7)/33
Ig = 91mA (1)
Qg = 42 10 = 32nC
Hence: tfv = 352ns (1)

Therefore total turn-on switching time is 16.83+40+352 = 408.83ns