Ec Lec05 Mosfet

Chapter 5
MOS Field-Effect Transistors (MOSFETs)

Dang Nguyen Chau Click to edit Master subtitle style
Ho Chi Minh City University of Technology
Email: chaudn@hcmut.edu.vn
What is a Transistor?
Websters Dictionary: Transistor is a solid-state electronic device that
is used to control the flow of electricity in electronic equipment and
consists of a small block of a semiconductor with at least three
electrodes.
Three-terminal device whose voltage-current relationship is controlled

by a third voltage or current.
We may regard a transistor as a controlled voltage or current source.
Dept. of Telecomm. Eng.

Faculty of EEE 2 Electronic Circuit, 2013
What is a Transistor?
TRANSISTOR is an abbreviation to TRANSfer resISTOR.
"The Transistor was probably the most important invention of the 20th
Century, and the story behind the invention is one of clashing egos and
top secret research." Ira Flatow, Transistorized!

Type of Transistor?
According to the physics of the device, we can classify transistors into
two main classes:
Field Effect Transistors (FET): Conduction is controlled by electric field which

is produced by voltage applied to the control terminals. So, the control draws no
current and FET is a voltage- controlled device.
Bipolar Junction Transistors (BJT): Diode-based device which is usually

blocked unless the control terminals are forward- biased. So, the control is a current,
and BJT is a current amplifier by nature.

Content
Structure and Physical Operation.

MOSFETs
The MOSFET has become the most widely used electronic device,
especially in the design of integrated circuits (ICs), which are entire
circuits fabricated on a single silicon chip.
Advantages:
Compared to BJTs, MOSFETs can be made quite small (i.e.,
requiring a small area on the silicon IC chip).
Their manufacturing process is relatively simple.
Their operation requires comparatively little power.
Circuit designers have found ingenious ways to implement digital
and analog functions utilizing MOSFETs almost exclusively (i.e.,
with very few or no resistors)

Structure of n-MOSFETs
n type MOSFETs (NMOS)

Structure of n-MOSFETs
The transistor is fabricated on a p-type substrate.
Two heavily doped n-type regions: source and drain.
Four terminals are brought out: the gate terminal (G), the source
terminal (S), the drain terminal (D), and the substrate or body terminal
(B).

Physical Operation
The value of vGS at
which a sufficient
number of mobile
electrons accumulate
in the channel region
to form a conducting
channel is called the
threshold voltage and
is denoted Vt
Vt 0.3 1 (V)
Physical Operation
The current will
flow through the
channel when a
voltage vDS is applied.
This is the origin of
the name field-effect
transistor (FET)

Physical Operation
The excess of vGS over Vt is termed the effective voltage or the
overdrive voltage and is the quantity that determines the charge in the
channel.
vGS Vt vOV
When vDS=0, the voltage at every point along the channel is zero, and
the voltage across the oxide is uniform and equal to vGS.
The magnitude of the electron charge in the channel by

Q Cox WL vOV Cox : oxide capacitance
W : width of channel
L : length of channel
Applying a Small vDS
The current in channel
W
iD nCox vOV vDS
L
or:
W
iD nCox vGS Vt vDS
Cox : oxide capacitance L
L : length of channel n : electron mobility
The conductance of the

channel
W
gDS nCox vOV
L
or:
W
gDS nCox vGS Vt
Cox : oxide capacitance L
L : length of channel n : electron mobility
Observe that the conductance is determined by the product of three
factors: nCox , W / L , v
OV
The first factor, nCox is determined by the process technology

used to fabricate the MOSFET. It makes physical sense for the
channel conductance. The process trans-conductance parameter:
kn' nCox

OV
The second factor is the transistor aspect ratio. The values of W

and L can be selected by the device designer to give the device the
characteristics desired. For a given fabrication process, there is a
minimum channel length Lmin.

OV

The minimum channel length is being continually reduced as

technology advances. For instance, in 2009 the state-of-the-art in
commercially available MOS technology was a 45-nm process.

OV

The MOSFET trans-conductance parameter:
kn kn' W / L nCox W / L

OV
The third factor is the overdrive voltage vOV . This factor

determines the magnitude of electron charge. This is a very
important circuit-design parameter.

With vDS is kept small, the MOSFET behaves as a linear resistance
1
rDS
gDS
1

nCox W / L vOV

With vDS is kept small, the MOSFET behaves as a linear resistance

Operation when Increasing vDS
Let MOSFET be
operated at an overdrive
voltage VOV
The channel voltage is decease from: vGS Vt VOV at the source end
to vGD Vt VOV vDS at the drain end.



1 1
VOV VOV vDS or VOV vDS
2 2
W
' 1 ' W 1 2
iD k VOV vDS vDS kn VOV vDS vDS
n
L 2 L 2

Operation for vDS > VOV


' W 2
iD k VOV
n => The drain current
L thus saturates at the
value vDS VOV

' W 2
iD k VOV
n
L
VDSsat VOV VGS Vt

Summary
Resistive
VGS Vt
VDS small

Summary
Resistive
VGS Vt
VDS small
Nonlinear
VGS Vt
VDS VGS Vt

Summary
Resistive
VGS Vt
VDS small
Nonlinear
VGS Vt
VDS VGS Vt
Saturation
VGS Vt
VDS VGS Vt
Summary
Resistive
VGS Vt
VDS small
Triode
Nonlinear
VGS Vt
VDS VGS Vt
Saturation
VGS Vt
Active
VDS VGS Vt
Summary
Resistive
VGS Vt
VDS small
Triode
MOSFET is Nonlinear
used as VGS Vt
switch
VDS VGS Vt
Saturation
VGS Vt
Active
VDS VGS Vt
Summary
Resistive
VGS Vt
VDS small
Triode
MOSFET is Nonlinear
used as VGS Vt
switch
VDS VGS Vt
Saturation
VGS Vt
Active
MOSFET is used VDS VGS Vt
as amplifier
Test your understand
Example: Consider a process technology for which Lmin=0.4um,
tox=8nm, Vt=0.7V and n = 450cm2/V
Find Cox and kn
For a MOSFET W/L=8/0.8 um, calculate the value of VOV, VGS,
VDSmin needed to operate the transistor in saturation region with a DC
current ID=100uA.
For the device in above question, find value of VOV, VGS required
to cause the device to operate as a 1000 Ohm resistor for very small
vDS

MOS in Sub-threshold Region
The above description of the n-channel MOSFET operation implies
that for vGS < Vt, no current flows and the device is cut off.
This is not entirely true, for it has been found that for values of vGS
smaller than but close to Vt, a small drain current flows. In this
subthreshold region of operation, the drain current is exponentially
related to vGS like iC-vBE relationship in BJT.
Although in most applications the MOS transistor is operated with

vGS>Vt, there are special, but a growing number of, applications that
make use of subthreshold operation.

Content
Current Voltage Characteristics.

Circuit Symbol
NMOS
symbol

The iD-vDS characteristic



The iD-vGS characteristic
In saturation region
1 ' W 2
iD kn vGS Vtn
2 L
1 ' W 2
kn vOV
2 L

1 ' W 2
iD kn vGS Vtn
2 L
1 ' W 2
kn vOV
2 L

1 ' W 2
iD kn vGS Vtn
2 L
1 ' W 2
kn vOV
2 L

Finite Output Resistance in Saturation
In practice, increasing vDS beyond vOV does affect the channel
somewhat: as vDS is increased, the channel pinch-off point is moved
slightly away from the drain, toward the source.

The channel length is in

effect reduced.


effect reduced.
The drain current
1 ' W 2
iD kn vGS Vtn 1 vDS
2 L


effect reduced.
The drain current
1 ' W 2
iD kn vGS Vtn 1 vDS
2 L
is a device parameter, depends both on the process technology used to fabricate
the device and on the channel length L that the circuit designer selects.
1
VA


1
VA

VA
ro
ID

p-channel MOSFETs
p-channel MOSFETs
(PMOS)

p-channel MOSFETs
p-channel MOSFETs
(PMOS)
The condition for p-channel

established
vGS Vtp
or
vGS Vtp
p-channel MOSFETs
PMOS symbol

p-channel MOSFETs

p-channel MOSFETs

Complementary MOS or CMOS

Complementary MOS or CMOS
At the present time CMOS is the most widely used of all the IC
technologies.
CMOS technology has virtually replaced designs based on NMOS
transistors alone.

CMOS Switch
CMOS switch is called an inverter

CMOS Switch
Vin low

CMOS Switch
NMOS is off
Vin low

CMOS Switch
NMOS is off
Vin low

CMOS Switch
NMOS is off
Vin low
Vout high
CMOS Switch
Vin high

CMOS Switch
PMOS is off
Vin high

CMOS Switch
PMOS is off
Vin high

CMOS Switch
PMOS is off
Vin high
Vout low
Digital Logic -Generalization
De Morgans Law
A B C A.B.C
A.B.C A B C
Distributive Law:
AB AC A( B C )

CMOS Logic Gate Circuits
Two networks:
Pull-down network (PDN) with NMOS.
Pull-up network (PUN) with PMOS

Two networks:

Two networks:
PDN consists of NMOS

transistors and is active when
inputs are high

Two networks:
PUN conducts when inputs

are low and consists of
PMOS transistors
PDN consists of NMOS

transistors and is active when
inputs are high

PDN and PUN utilize devices:
In parallel to form OR functions
In series to form AND functions

Pull-Down Networks

Pull-Down Networks
Y A B

Pull-Down Networks
Y A B

Pull-Down Networks
Y A B
Y A.B

Pull-Up Networks

Pull-Up Networks
Y A B

Pull-Up Networks
Y A B

Pull-Up Networks
Y A B
Y A.B
Pull-Down and Pull-Up

Pull-Down and Pull-Up

Two-Input NOR Gate

Two-Input NAND Gate

CMOS Logic Gate
Example:

CMOS Logic Gate
Example:

CMOS Logic Gate
Example:

CMOS Logic Gate
Example:

Content
MOSFET Circuits at DC.

MOSFET Circuits at DC
Example: Consider an NMOS transistor L=1um, W=32um, Vt=0.7.
Transistor operates at ID=0.4mA, VD=0.5V. Determine the value of RD
and RS. nCox =1000uA/V2

Example: Find the i-v relationship in tern of MOSFET parameters: Vtn
and k k ' W / L
n n

Example: Design the circuit to establish a drain voltage of 0.1V. What
is the effective resistance between drain and source at this operating
'
point? Vtn=1V, kn kn W / L =1mA/V2
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Example: Determine the voltage and the current of all nodes and
branches? Vtn=1V, k k ' W / L =1mA/V2
n n

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Example: What is the largest value RD that can have while
'
maintaining saturation-region operation? Vtp=-1V, k p k p W / L
=1mA/V2

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Example: The NMOS and PMOS transistors in the circuit are
' '
matched. ? Vtn= -Vtp= 1V, kn kn W / L = k p k p W / L =
1mA/V2. Find the drain current, output voltage. The input voltage are: 0,
2.5V, -2.5V

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Content
Applying the MOSFET in Amplifier Design.

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MOSFET Amplifier Design

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vDS VDD iD RD

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1 2
iD kn vGS Vt
2
vDS VDD iD RD

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1 2
iD kn vGS Vt
2
Input voltage increase => drain

current increase => output voltage
decrease.
vDS VDD iD RD

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1 2
iD kn vGS Vt
2
Input voltage increase => drain

current increase => output voltage
decrease => saturation region
vDS VDD iD RD When vGS is reached that value in

vDS become lower than vGS by Vt. The
transistor become in triode region

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vDS VDD iD RD

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1 2
iD kn vGS Vt
2
vDS VDD iD RD

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1 2
iD kn vGS Vt
2
vDS VDD iD RD
1 2
vDS VDD kn RD vGS Vt
2

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1 2
iD kn vGS Vt
2
vDS VDD iD RD
1 2
2
2kn RDVDD 1 1
VGS B Vt
kn RD
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MOSFET Biasing
Operating point

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MOSFET Biasing
Operating point
1 2
2

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MOSFET Locating Bias point

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Q1 close to VDD => positive peak
signal being clipped off

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Q1 close to VDD => positive peak
signal being clipped off
Q2 close to boundary of triode region VDD

=> negative peak signal being clipped off

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Biasing the MOS Amplifier Circuit
Biasing by fixing VGS.

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1 W 2
ID nCox VGS Vt
2 L

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1 W 2
ID nCox VGS Vt
2 L

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Biasing by fixing VG and connecting a resistance in source.

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VG VGS RS I D
RS keep drain current stable: Consider
when ID increases for whatever reason.
Since VG is constant, VGS will decrease.
This make ID decrease.

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Biasing using drain-to-gate feedback resistor.
VDD VGS RD I D

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Biasing using constant current source.

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VDD VSS VGS

ID1 I REF
R

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VDD VSS VGS

ID1 I REF
R
1 ' W 2
ID1 kn VGS VOV
2 L 1

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VDD VSS VGS

ID1 I REF
R
1 ' W 2
ID1 kn VGS VOV
2 L 1
1 ' W 2
ID2 kn VGS VOV
2 L 2

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VDD VSS VGS

ID1 I REF
R
1 ' W 2
ID1 kn VGS VOV
2 L 1
1 ' W 2
ID2 kn VGS VOV
2 L 2
W / L2
I ID2 I REF
W / L1
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MOSFET Small-Signal Voltage Gain

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vDS
Av kn VGS Vt RD
vGS vGS VGS

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vDS
Av kn VGS Vt RD
vGS vGS VGS

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We make the following observations on this expression for the voltage
gain
The gain is negative.
The gain is proportional to the load resistance RD, to the transistor

trans-conductance kn, and to the overdrive voltage VOV.

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Example: The transistor is specified to have Vt=0.4V, kn' =0.4mA/V2,
W/L=10, VDD=1.8V, RD=17.5k, VGS=0.6V.
- For vgs=0, find VOV, ID, VDS and Av.
- What is the maximum symmetrical signal swing allowed at the
drain? Hence find the maximum allowable amplitude of a sinusoidal
vgs.

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ID 0
vDS VDD
vDS 0
ID 0
vDS VDD
vDS 0
ID 0
Transistor as a switch vDS VDD
vDS 0
ID 0
Transistor as a switch vDS VDD
Content
Small-Signal operation and Model.

Small-Signal Operation
DC Bias current
1 2 1 2
ID kn VGS Vt knVOV
2 2
DC Voltage at the drain
VDS VDD RD ID

DC Bias current
1 2 1 2
ID kn VGS Vt knVOV
2 2
DC Voltage at the drain
VDS VDD RD ID
To ensure saturation-region operation
VDS VOV

Consider the situation with small-signal
applied
1 2
iD kn VGS vgs Vt
2
1 2 1 2
kn VGS Vt kn VGS Vt vgs knvgs
2 2
For the small signal approximation
1 2
knvgs kn VGS Vt vgs
2

Consider the situation with small-signal
applied
1 2
iD kn VGS vgs Vt
2
1 2 1 2
kn VGS Vt kn VGS Vt vgs knvgs
2 2
1 2
iD kn VGS Vt kn VGS Vt vgs I D id
2

1 2
2
id kn VGS Vt vgs

1 2
2
id kn VGS Vt vgs
MOSFET trans-conductance
id
gm kn VGS Vt knVOV
vgs

id
gm kn VGS Vt knVOV
vgs
Voltage gain
vDS VDD iD RD VDD I D id RD

VDS id RD

Voltage gain

VDS id RD
vds id RD gmvgs RD

Voltage gain

VDS id RD
vds id RD gmvgs RD
vds
Av gm RD
vgs

Separating DC and Small-Signal Analysis

Small-Signal Model
Pi-model

Small-Signal Model
VA
Pi-model ro
ID

Small-Signal Model
VA
ro
ID
1 2 1 2
ID kn VGS Vt knVOV
2 2

Small-Signal Model
VA
ro
ID
1 2 1 2
ID kn VGS Vt knVOV
2 2

Small-Signal Model
VA
ro
ID
1 2 1 2
ID kn VGS Vt knVOV
2 2
'2I D
gm knVOV k W / LVOV n
VOV
Small-Signal Model
'2I D
gm knVOV k W / LVOV n
VOV
Small-Signal Model
Pi-model
T-model

Small-Signal Model
Pi-model
T-model

Small-Signal Model
Example: Common-source MOSFET amplifier utilizing a drain-to-
gate resistance RG for biasing purposes. Determine small-signal voltage
gain, input resistance, the largest allowable input signal.
Vt=1.5V,kn kn' W / L =
0.25mA/V2, VA=50V

Small-Signal Model
Example: A MOSFET amplifier biased by a constant-current source I.
Assume that the values of I and RD are such that the MOSFET operates in
the saturation region. Find the value of input resistance and voltage gain.

Summary

Content
Basic MOSFET Amplifier Configurations.

MOSFET Amplifier Configurations

Common - Source

Common - Source

Common - Source
Common - Gate

Common - Source
Common - Gate

Common - Source
Common - Gate
Common - Drain

The Common-Source (CS) Amplifier
Common - Source

Common - Source

Common - Source
Rin

Rout RD / /ro RD
Common - Source
Rin

Rout RD / /ro RD
Common - Source
Av gm RD / /ro gmRD
Rin

Rout RD / /ro RD
Common - Source
Av gm RD / /ro gmRD
Rin
Overall voltage gain
Gv gm RD / /ro / / RL

Some observations:
The input resistance is ideally infinite.
The output resistance is moderate to high. Reduce RD for reducing

output resistance, the voltage gain is also reduced.
Open circuit voltage gain Av of CS is high => CS is the most

common configuration for MOS amplifier design.

The CS Amplifier with Source Resistance
CS amplifier with source resistance


Rin

Rin Rout RD

vi gm
i vi
1/ gm RS 1 gmRS
vo iR D
Rin Rout RD

vi gm
i vi
1/ gm RS 1 gmRS
vo iR D
Rin Rout RD vo RD gmRD

Av
vi 1/ gm RS 1 gmRS

vi gm
i vi
1/ gm RS 1 gmRS
vo iR D
Rin Rout RD vo RD gmRD

Av
vi 1/ gm RS 1 gmRS
Open circuit voltage gain
Total resistance in drain

Av
Total resistance in source
Some observations:
The input resistance is ideally infinite.
The output resistance is moderate to high. Reduce RD for reducing

output resistance, the voltage gain is also reduced.
Open circuit voltage gain Av is high.

vi
vgs => We can use the value of RS to control the value
1 gm RS
of vgs. Thereby ensure that vgs does not become too large and cause
unacceptably high nonlinear distortion.

The Common-Gate (CG) Amplifier
Common-gate amplifier


1
Rin
gm
Rout RD
1
Rin
gm

Rout RD
vi
i
1/ gm
vo iR D
1
Rin
gm

Rout RD
vo
Av gm RD
vi
1
Rin
gm

Rout RD
vo
Av gm RD
vi
Gv
RD / / RL
Rsig 1/ gm
1
Rin
gm

Rout RD
vo
Av gm RD
vi
Gv
RD / / RL
Rsig 1/ gm
Total resistance in drain
1 Gv Total resistance in source
Rin
gm
Some observations:
The input resistance is low. => the CG amplifier alone has very
limited application.
The output resistance is moderate to high. (the same as CS

amplifier)
Open circuit voltage gain Av is high.
However, the overall voltage gain Gv is very low.

The Common-Drain (CD) Amplifier
Connect source with high resistance

with a load low resistance

Connect source with high resistance Output voltage is low



Need an buffer: high input

resistance, low output
resistance and unity gain






Source follower

The CD Amplifier Source Follower
Common-drain amplifier


Rin

1
Rin Rout
gm

vo RL
Av 1
vi RL 1/ gm
1
Rin Rout
gm

vo RL
Av 1
vi RL 1/ gm
Common-drain amplifier Overall voltage gain

1 Rin
Rin Rout
gm vi vsig

vo RL
Av 1
vi RL 1/ gm
Common-drain amplifier Overall voltage gain

1 Rin
Rin Rout
gm vi vsig
vo RL
Gv 1
vsig RL 1/ gm

Some observations:
The input resistance is high.
The output resistance is moderate to low.
Open circuit voltage gain Av is near unity.
However, the overall voltage gain Gv is near unity.

Summary

Content
Basic MOSFET Amplifier Configurations.
Discrete-Circuit MOS Amplifiers.

Discrete-Circuit MOS Amplifiers
Example: VDD=VSS=10V,
I=0.5mA, RG=4.7M, RD=15k,
'
Vt=1.5V, kn kn W / L=1mA/V2
Calculate input, output resistance

and overall voltage gain.
Rsig=100k, RL=15k

I=0.5mA, RG=4.7M, RD=15k,
'
k kn W / L=1mA/V
Vt=1.5V, n 2

and overall voltage gain.
Rsig=100k, RL=15k, RS=2.15k

I=0.5mA, RD=15k, Rsig=50
'
Vt=1.5V, kn kn W / L=1mA/V2

and overall voltage gain. RL=15k

I=0.5mA, RD=15k, Rsig=1M
'
Vt=1.5V,kn kn W / L =1mA/V2

and overall voltage gain. RL=15k


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Chapter 5

MOS Field-Effect Transistors (MOSFETs)

Three-terminal device whose voltage-current relationship is controlled

We may regard a transistor as a controlled voltage or current source.

Dept. of Telecomm. Eng.

Dept. of Telecomm. Eng.

Field Effect Transistors (FET): Conduction is controlled by electric field which

Bipolar Junction Transistors (BJT): Diode-based device which is usually

Dept. of Telecomm. Eng.

Dept. of Telecomm. Eng.

Dept. of Telecomm. Eng.

n type MOSFETs (NMOS)

Dept. of Telecomm. Eng.

Dept. of Telecomm. Eng.

Dept. of Telecomm. Eng.

The magnitude of the electron charge in the channel by

The current in channel

The conductance of the

The first factor, nCox is determined by the process technology

Dept. of Telecomm. Eng.

The second factor is the transistor aspect ratio. The values of W

Dept. of Telecomm. Eng.

The second factor is the transistor aspect ratio. The values of W

The minimum channel length is being continually reduced as

Dept. of Telecomm. Eng.

The second factor is the transistor aspect ratio. The values of W

The MOSFET trans-conductance parameter:

Dept. of Telecomm. Eng.

The third factor is the overdrive voltage vOV . This factor

Dept. of Telecomm. Eng.

Dept. of Telecomm. Eng.

Dept. of Telecomm. Eng.

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Dept. of Telecomm. Eng.

Dept. of Telecomm. Eng.

Dept. of Telecomm. Eng.

VDSsat VOV VGS Vt

Dept. of Telecomm. Eng.

Dept. of Telecomm. Eng.

Dept. of Telecomm. Eng.

Although in most applications the MOS transistor is operated with

Dept. of Telecomm. Eng.

Dept. of Telecomm. Eng.

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Dept. of Telecomm. Eng.

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The channel length is in

Dept. of Telecomm. Eng.

The channel length is in

The drain current

Dept. of Telecomm. Eng.

The channel length is in

The drain current

Dept. of Telecomm. Eng.

Dept. of Telecomm. Eng.

Dept. of Telecomm. Eng.