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TIP125/TIP126/TIP127 PNP Epitaxial Darlington Transistor

October 2008

TIP125/TIP126/TIP127
PNP Epitaxial Darlington Transistor
Medium Power Linear Switching Applications
Complementary to TIP120/121/122

Equivalent Circuit
C

1 TO-220
R1 R2
1.Base 2.Collector 3.Emitter
R1 @ 8kW E
R2 @ 0.12k W

Absolute Maximum Ratings* T a = 25C unless otherwise noted

Symbol Parameter Ratings Units


VCBO Collector-Base Voltage : TIP125 - 60 V
: TIP126 - 80 V
: TIP127 - 100 V
Collector-Emitter Voltage : TIP125 - 60 V
VCEO : TIP126 - 80 V
: TIP127 - 100 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current (DC) -5 A
ICP Collector Current (Pulse) -8 A
IB Base Current (DC) - 120 mA
PC Collector Dissipation (Ta=25C) 2 W
Collector Dissipation (TC=25C) 65 W
TJ Junction Temperature 150 C
TSTG Storage Temperature - 65 ~ 150 C

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

2007 Fairchild Semiconductor Corporation www.fairchildsemi.com


TIP125/TIP126/TIP127 Rev. 1.0.0 1
TIP125/TIP126/TIP127 PNP Epitaxial Darlington Transistor
Electrical Characteristics* Ta=25C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
VCEO(sus) Collector-Emitter Sustaining Voltage
: TIP125 IC = -100mA, IB = 0 -60 V
: TIP126 -80 V
: TIP127 -120 V
ICEO Collector Cut-off Current
: TIP125 VCE = -30V, IB = 0 -2 mA
: TIP126 VCE = -40V, IB = 0 -2 mA
: TIP127 VCE = -50V, IB = 0 -2 mA
ICBO Collector Cut-off Current
: TIP125 VCB = -60V, IE = 0 -1 mA
: TIP126 VCB = -80V, IE = 0 -1 mA
: TIP127 VCB = -100V, IE = 0 -1 mA
IEBO Emitter Cut-off Current VBE = -5V, IC = 0 -2 mA
hFE * DC Current Gain VCE = -3V, IC = 0.5A 1000
VCE = -3V, IC = -3A 1000
VCE(sat) * Collector-Emitter Saturation Voltage IC = -3A, IB = -12mA -2 V
IC =-5A, IB=-20mA -4 V
VBE(on) * Base-Emitter On Voltage VCE = -3V, IC = -3A -2.5 V
Cob Output Capacitance VCB = -10V, IE = 0, f = 300 pF
0.1MHz
* Pulse Test: Pulse Width300ms, Duty Cycle2%

2007 Fairchild Semiconductor Corporation www.fairchildsemi.com


TIP125/TIP126/TIP127 Rev. 1.0.0 2
TIP125/TIP126/TIP127 PNP Epitaxial Darlington Transistor
Typical Characteristics

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE


10k

V CE = 4V -3.5 IC = 250IB

-3.0
hFE, DC CURRENT GAIN

-2.5

1k
-2.0

VBE(sat)
-1.5

-1.0
VCE (sat)

100
-0.1 -1 -10 -0.5
-0.1 -1 -10

IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT

Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage


Collector-Emitter Saturation Voltage

1000
-10
f = 0.1MHz

10
0m
s
50 ms
Cob[pF] Cib[pF], CAPACITANCE

0m
1

s
IC[A], COLLECTOR CURRENT

5m
s
DC
-1

100

Cob
Cib
-0.1

TIP125

TIP126

10 TIP127
-0.1 -1 -10 -100
-0.01
-1 -10 -100
VCB[V], COLLECTOR-BASE VOLTAGE
VEB[V], EMITTER-BASE VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 3. Output and Input Capacitance Figure 4. Safe Operating Area


vs. Reverse Voltage

90

75
PC[W], POWER DISSIPATION

60

45

30

15

0
0 25 50 75 100 125 150 175

o
TC[ C], CASE TEMPERATURE

Figure 5. Power Derating

2007 Fairchild Semiconductor Corporation www.fairchildsemi.com


TIP125/TIP126/TIP127 Rev. 1.0.0 3
TIP125/TIP126/TIP127 PNP Epitaxial Darlington Transistor
Mechanical Dimensions

TO220

2007 Fairchild Semiconductor Corporation www.fairchildsemi.com


TIP125/TIP126/TIP127 Rev. 1.0.0 4
TIP125/TIP126/TIP127 PNP Epitaxial Darlington Transistor
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF
THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE
UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF
FAIRCHILDS WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE
PRODUCTS.

LIFE SUPPORT POLICY


FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:
1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body, or device or system whose failure to perform can be reasonably
(b) support or sustain life, and (c) whose failure to perform expected to cause the failure of the life support device or
when properly used in accordance with instructions for use system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to result
in significant injury to the user.

PRODUCT STATUS DEFINITIONS


Definition of Terms
Datasheet Identification Product Status Definition
This datasheet contains the design specifications for product development.
Advance Information Formative or In Design
Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
Preliminary First Production lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
This datasheet contains final specifications. Fairchild Semiconductor reserves
No Identification Needed Full Production
the right to make changes at any time without notice to improve design.
This datasheet contains specifications on a product that has been discontin-
Obsolete Not In Production ued by Fairchild semiconductor. The datasheet is printed for reference infor-
mation only.

Rev. I31
2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP125/TIP126/TIP127 Rev. A1 5

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