Multisim Thermal Modeling

IGBT Thermal Diode Page 1 of 23
IGBT Thermal Diode

This model represents a power switch that includes an IGBT (insulated gate bipolar transistor) device and a diode device.
Use this model to estimate power dissipation, efficiency, and operating temperatures of the devices and of the overall switch-mode
circuit that these devices are used in. These models are not designed to model detailed electrical behavior such as saturation
currents, and turn-on transients caused by charge storage elements.
By taking advantage of certain switching-loss information provided in datasheets by manufacturers of high power IGBT models, the
model affords highly simplistic and computationally efficient electrical models which provide only the rudimentary ON/OFF behavior.
The model can be parameterized using information directly from datasheets.
Note This component is called IGBT_DIODE_THERMAL in the database.
Related Information
Thermal Modeling Overview
Model Design
Parameterization and Usage
Example
Model Design
The figure below shows the IGBT thermal diodes internal model structure.
file:///C:/Users/ostepano/AppData/Local/Temp/~hh4917.htm 30/04/2014
The electrical network is made from an ideal voltage-controlled switch and two ideal diodes. These elements model the basic
function of the IGBT and diode devices.
The model also contains separate switching loss and conduction loss generators for each IGBT and diode, represented using
current sources PswQ, PcondQ, PswQ, and PcondD in the diagram above. These are controlled current sources which inject the
calculated power into the thermal network. They are the core of the entire model, linking together the electrical network and the
thermal network.
The thermal network consists of R-C elements that model a one-dimensional thermal structure of the IGBT and diode switch. The
voltages at temperature nodes TjQ, TjD, TcQ, TcD, and Th represent the IGBT junction, diode junction, IGBT case, diode case, and
heat sink temperatures, respectively. On these nodes, 1V represents 1C. Notice that the model makes no assumptions about the
Heaksink-to-ambient thermal impedance, requiring the user to complete the thermal network by connecting thermal elements (for
example, thermal impedances, thermal sources) to the temperature nodes outside of the component. These nodes are exposed
externally using component symbol pins.
For convenience, current probes (ideal 1V/1A current-to-voltage converters) are used to expose the power dissipation as a voltage
measurement on pins PswQ, PcQ, PswD, PcD. On these nodes, 1V represents 1Watt. The nodes are exposed as symbol pins on
the component.
Electrical Behavior
The electrical model is ideal. Both the diode and IGBT are modeled using 2-segment, piecewise linear I/V curves. No dynamic
behavior such as charge storage is modeled. As such, switching events are instantaneous. The following I/V graphs depict model
behavior.
Diode model:
IGBT model, control voltage High:
IGBT model, control voltage Low:
The electrical models also contain monitoring capability. The models make various measurements such as conduction current and
blocking voltage and detect switching events. The electrical models pass this information to the switching and conduction loss
generators.
Switching Loss Calculation

Dynamic switching losses are derived from data provided by the IGBT manufacturer.
These curves indicate the switching energy, lost per switching cycle, from the value of the conduction current Ic. This exists in the
circuit just prior to a turn-off event or is developed just after a turn-on event. The thermal model is parameterized using points from
these curves.
Each switching cycle, the switching loss generator for the IGBT and diode uses the conduction current and the sensed junction
temperature values to look up the switching energy losses. The switching loss generator also dynamically detects the switching
frequency which it multiplies by the energy loss value to determine the average power dissipated during that switching cycle. The
complete equation used for calculating the switching losses for the IGBT is:
Where:
Eon(Ic,Tj), Eoff(Ic,Tj)Piecewise linear functions representing the energy turn-on and turn-off losses per switching cycle. Multisim
interpolates the losses based on the conduction current. The Eon vs Ic and Eoff vs Ic datasets can be supplied at one or two
temperatures. If losses are supplied at two temperatures, Multisim further interpolates the losses based on the present operating
temperature.
FswSwitching frequency. This can be supplied as a parameter. Otherwise it is dynamically calculated.
VdcThe blocking voltage of the device. This can be supplied as a parameter. Otherwise, it is dynamically calculated. The losses
are scaled by the ratio of this voltage and Vdc_nominal.
Vdc_nominalVoltage used to produce switching loss voltage in the datasheet. Set as a constant parameter.
TjJunction temperature at the time of switching. This is the value on the Tj pin in the thermal model.
IcThe switch current (when switch is On). This is dynamically calculated.
AdjustAn adjustment factor. Typically used to adjust losses if simulating using different gate resistors. This simplified approach to
calculating switching losses avoids not only the need for complex models, which are difficult to parameterize and difficult to
simulate, but also the necessity of using very small time steps to capture the detailed I x V waveform during the switching event.
The same applies to the diode switching losses, except that instead of both turn-on and turn-off curves, only the turn-off (or reverse-
recovery) losses are considered.
Conduction Loss Calculation

Conduction losses are derived from forward conduction curves available on most datasheets, for example:
The thermal model is parameterized using points from these curves. Conduction losses are calculated continuously using a direct I
x V approach. At every simulation time step, the model determines the IGBT current and the junction temperature and passes these
values into a piecewise linear function representing the forward conduction characteristic. The resulting voltage is multiplied by the
current to arrive at the instantaneous power, as shown in the following equation:
PcQ = Vce (Ic, Tj) . Ic
Where:
VcePiecewise linear function representing the forward voltage. Multisim interpolates the voltage drop based on the conduction
current. The Vce vs Ic data set can be specified at one or two temperatures. If the Vce vs Ic dataset is specified at two
temperatures, Multisim further interpolates the voltage drop based on the junction temperature. This function is used only for
calculating the conduction losses. It does not affect the voltage drop in the electrical circuit.
TjThe instantaneous junction temperature.
IcThe instantaneous switch current.
The same applies to the diode conduction losses.
Parameterization and Usage
IGBT Thermal Diode Symbol Pins
Pin
Description
Name
C Collector.
G Gate. This pin is used to control the state of the IGBT using a single-ended (relative to SPICE ground node 0) voltage
signal. This pin has infinite input impedance.
E Emitter.
Th Heat-sink node. The external heat sink must be connected to this pin.
TcQ The thermal node representing the case under the IGBT. Depending on the thermal network configuration defined in
the Thermal Impedance tab, this node may be shared between the IGBT and diode, or it may be unavailable. When it
is unavailable, values on this pin do not represent the case temperature and are ignored.
TcD The thermal node representing the case under the diode. It shares characteristics with the TcQ.
TjQ The thermal node representing the IGBT junction.
TjD The thermal node representing the diode junction.
PswQ Voltage values on this pin indicate the switching losses in Watts of the IGBT. This is a measurement-only pin. This pin
can only be used as a probe test point. 1V represents 1W.
PcQ Voltage values on this pin indicate the conduction in Watts of the IGBT. This is a measurement-only pin. This pin can
only be used as a probe test point. 1V represents 1W.
PswD Voltage values on this pin indicate the switching losses in Watts of the diode. This is a measurement-only pin. This pin
can only be used as a probe test point. 1V represents 1W.
PcD Voltage values on this pin indicate the conduction losses in Watts of the diode. This is a measurement-only pin. This
pin can only be used as a probe test point. 1V represents 1W.
A DC path to ground from at least one thermal node must be provided. Otherwise a thermal network with no power dissipation
capability is being modeled. In a simple scenario where power dissipation is studied under fixed junction temperature conditions, a
grounded voltage source must be attached to the TjQ and TjD pins. In a more practical scenario, a thermal impedance representing
a heat sink might be added to the heat sink pin Th (this thermal impedance must in turn be grounded).
If no DC path to ground exists (for example, all thermal node pins are left open), the junction temperature values will reach extreme
values and, if the power dissipation is configured to depend on temperature, the simulation will likely run into numerical difficulties.
Related Information
Model Design
Thermal Impedance Tab (IGBT Thermal Diode)
Electrical Tab (IGBT Thermal Diode)
This sub-tab contains the following:
Parameter Description
IGBT control The IGBT turn-on/turn-off threshold voltage. If the gate voltage is above this value, the IGBT is represented
threshold as an ideal diode.
If the gate voltage is below this value, the IGBT is represented by a large resistor.
IGBT on The resistance of the IGBT in the forward conduction region when the gate voltage is above the IGBT
resistance control threshold.
IGBT off The resistance of the IGBT when the gate voltage is below the IGBT control threshold, or when it is reverse
resistance biased.
IGBT forward The forward voltage drop of the IGBT.

voltage drop
Diode on The resistance of the freewheeling diode in the forward conduction region.
resistance
Diode off The resistance of the freewheeling diode in the reverse conduction region.
resistance
Diode forward The forward voltage drop of the diode.

voltage drop
Number of The number of parallel switches (includes the IGBT and diode).
switches in
If this value is N, the resulting model is the mathematical equivalent of manually connecting N equivalent
parallel
components in parallel.
For example:
is equivalent to:
The generated power and the reported power measurements (on measurement pins) is the total power for all
N switches.
Copy to Displays the Copy to Components dialog box. Copies all settings of all instance parameters of the selected
components component to one or more components of the same type.
Save Displays the Select Destination Family Name dialog box where you specify where to save the component.
component to Use this if you have changed the components model and wish to save the new version in the User database.
DB
Note The resistance and voltage drop values are used only for the electrical model. They are not directly used in the
calculation of thermal losses. The resistances and voltage drops specified in this tab have only a minor impact on conduction
current, which is typically determined mainly by external conditions and parameters. To calculate the conduction losses, the model
uses a more precise look-up function to determine the voltages.
Related Information
IGBT Conduction Losses Tab (IGBT Thermal Diode)
Diode Conduction Losses Tab (IGBT Thermal Diode)
IGBT Conduction Losses Tab (IGBT Thermal Diode)

Use this sub-tab to parameterize the IGBT forward conduction curves which are used for conduction loss calculations.
Select Conduction losses independent of junction temperature if you have the forward conduction curve or dataset for only one
temperature.
Select Conduction losses dependent on junction temperature if you have the forward conduction curves (Ic vs. Vce) or data
sets at two different temperatures, and if you want to simulate conduction losses as a function of temperature.
Enter the Temperature 1 and Temperature 2 values corresponding to the two curves in the IGBT conduction curve tables.
Parameterize each curve using piecewise linear data. For example:
Be sure to include the 0,0 coordinate, as in the example below.
Buttons
Copy to components displays the Copy to Components dialog box. Copies all settings of all instance parameters of the selected
component to one or more components of the same type.
Save component to DB displays the Select Destination Family Name dialog box where you specify where to save the
component. Use this if you have changed the components model and wish to save the new version in the User database.
IGBT Switching Losses Tab (IGBT Thermal Diode)

Use this sub-tab to parameterize the IGBT switching energy loss curves which are used for switching losses calculations.
Select Switching losses independent of junction temperature if you only have the switching loss curve or data set for one
temperature.
Select Switching losses dependent on junction temperature if you want to simulate switching losses as a function of
temperature. Only do this if you have the turn-on curves (Eon vs Ic) and turn-off curves (Eoff vs Ic) or datasets at two different
temperatures.
Enter the Temperature 1 and Temperature 2 values corresponding to the two curves in the IGBT switching curve table.
Switching losses curves are always measured under some blocking or DC bus voltage condition. This is usually specified next to
the curves in the datasheet. Enter this value in Blocking voltage used in measurements field.
Enter the data for Eon vs. Ic and Eoff vs. Ic curves at each temperature. For example:
If your data combines the Eon and Eoff curves, enter this data into the Eon column and enter zeros in the Eoff column.
Not all datasheets provide switching loss curves. Some provide only a single data point related to the switching energy lossesyou
may still use this to parameterize the model. The results will be reasonably accurate because the Eon and Eoff curves are relatively
linear with conduction current. For example, the datasheet may state the following:
Etotal/Inom = 0.1314 [mJ/A]
This is just the slope of the total energy losses (turn-on and turn-off). This data might be entered into the table as follows:
Gate resistor size affects the switching losses. If you are using gate resistor values different from those used in the datasheet
measurement, see Additional settings tab to adjust for this.
Buttons
Diode Conduction Losses Tab (IGBT Thermal Diode)
Use this sub-tab to parameterize the diode forward conduction curves which are used for diode conduction losses calculations.
If you only have the forward conduction curve or dataset for one temperature, select Conduction losses independent of junction
temperature.
Choose Conduction losses dependent on junction temperature if you want to simulate conduction losses as a function of
temperature. Only do this if you have the forward conduction curves (Ic vs. Vf) or datasets at two different temperatures. Enter the
temperature values corresponding to the two curves.
Parameterize each curve using piecewise linear data. For example:
Be sure to include the 0,0 coordinate, as shown in the example below.
Buttons
Diode Switching Losses Tab (IGBT Thermal Diode)

Use this sub-tab to parameterize the diode switching energy loss curves which are used for diode switching loss calculations.
If you only have the switching loss curve or dataset for one temperature, select Switching losses independent of junction
temperature.
Choose Switching losses dependent on junction temperature if you want to simulate switching losses as a function of
temperature. Only do this if you have the reverse recovery loss curves (Err vs. Ic) or datasets at two different temperatures. Enter
the temperature values corresponding to the two curves.
Gate resistor size affects the switching losses. If you are using different gate resistors from those used in the datasheet
measurement, refer to the Additional Settings Tab (IGBT Thermal Diode) topic.
Buttons
Thermal Impedance Tab (IGBT Thermal Diode)

Foster vs. Cauer Form
Configurations
Foster vs. Cauer Form
An R-C network that describes a thermal impedance may be represented in one of two forms: Foster or Cauer. These are depicted
below.
Foster network:
Cauer network:
The Cauer network is a more natural and intuitive representation of the thermal structure. However because it lends itself more
easily to characterization, the Foster network is usually referenced in datasheets.
The example below shows a typical table with R-W pairs describing a Foster network of the junction-to-case thermal impedance, as
commonly presented in datasheets.
If you are entering Foster parameters into the IGBT or diode thermal impedance table, ensure that Parameter type is set to Foster.
Note Multisim uses the Cauer form of the thermal network internally. If Foster parameters are specified, they will be
converted.
Configurations
The model allows for slight variations in the configuration of the resistors and capacitors which span the junction-to-heat sink layers.
This is done to accommodate the various ways in which manufacturers specify the parameters in the datasheets. The
configurations have an effect on the meaning of the temperature nodes and the pins exposed by the symbol. The following
describes the configurations.
Configuration 1: Add additional thermal resistance is unchecked
The thermal impedance values entered into the tables link the junction to the heat sink layers. This is depicted below.
Notice that the case temperature nodes for both the IGBT and the diode are masked by the thermal networks. The implementation
shorts the TcQ and TcD pins to the Th node. Values on the TcQ and TcD pins must therefore be ignored in this configuration as
they are meaningless.
Use this configuration if the datasheet specifies the full junction-to-heaksink thermal impedance using Foster or Cauer parameters.
For example:
Configuration 2: Add additional thermal resistance checked, Shared by IGBT and Diode selected
In this configuration the thermal impedance values entered into the tables link the junction layer to the case layer. The additional
resistance links the case layer, common to the IGBT and diode, to the heat sink layer. This is depicted below.
Use this configuration if the datasheet specifies junction-to-case thermal impedances for the IGBT and diode, and a case-to-heat
sink thermal resistance value (for example, Rth_CH) which is common to the IGBT and diode.
Configuration 3: Add additional thermal resistance checked, Individual selected.
In this configuration the thermal impedance values entered into the table link the junction layer to the case layer. Separate IGBT
and diode thermal resistances are used to link the IGBT case and the diode case layers to the common heat sink node. This is
depicted below.
Use this configuration if the datasheet specifies junction-to-case thermal impedances for the IGBT and Diode, and case-to-heat
sink thermal resistances values unique to each IGBT and diode. For example:
Note If you are specifying Foster parameters in the thermal impedance table, then a maximum of five R-W pairs are allowed.
Buttons
Initialization Tab (IGBT Thermal Diode)

The time constants in the thermal network can be six orders of magnitude greater than those in the electrical network. In real-world
components, it may take several minutes for such physical structures to reach steady-state temperature values. Because the
simulation needs to run with small time steps (for example, 1Ps) to accommodate the switching frequency of the circuit, it may take
an excessively long time for the simulation to reach the point where the temperature nodes are in steady-state. This may be
problematic if the purpose of the simulation is to determine the steady state or average values of the temperature.
The model offers a few ways of dealing with the initialization of the temperature. For any of the initialization methods to take effect,
the initial conditions for the simulation must be set to Calculate DC operating point.
For interactive simulation (for example, using the simulation switch or using LabVIEW co-simulation), modify the initial conditions in
the Interactive Simulation Settings dialog box, accessed through SimulateInteractive simulation settings.
For transient analysis, modify the initial conditions in the Transient Analysis dialog box, accessed through
SimulateAnalysesTransient analysis.
Method 1: Specifying the junction temperature
You can explicitly specify the junction temperature which must be used at the start of the simulation for the IGBT and diode. Select
Junction temperature, user-defined and enter the desired values, as shown in the example below:
During DC Operating Point Analysis, the temperature at the IGBT and diode junction nodes is set using nearly ideal voltage
sources. Since all thermal capacitors are open-circuited during DC Operating Point Analysis, the natural steady-state
temperatures at the various nodes are calculated and are then used to initialize the various thermal capacitors for the transient
analysis.
This is depicted using the following simplified thermal structure which includes the heat sink and its connection to the ambient
environment.
In this case the IGBT junction temperature is set to 130C and Diode junction temperature is set to 125C. Notice for example
that the case node Tc is calculated to be 93C.
Use this method if you want to start the simulation at a specific temperature. This method can also be used as part of an interactive
procedure to determine the steady-state junction temperature.
Method 2: Specifying the average power dissipation
This method is similar to method 1 except that in this case Multisim injects power into the thermal network to initialize the thermal
capacitors.
For each IGBT and diode you can specify the switching and conduction losses which are injected. Select Average power, user-
defined and enter the values, as shown below:
A simplified initialization circuit used in DC Operating Point Analysis under this method is shown below.
Method 3: Iterative method
An iterative method can be used to determine the steady-state temperature values without waiting for the simulation to naturally
settle to the steady-state values from some initialized state. This method uses average power calculations from the previous
simulation run to initialize the next simulation run. Generally, a few short simulation runs are required to determine the steady-state
temperature values. This method uses the dependency of temperature on power dissipation.
Recommended procedure:
1. Check the Calculate average power during simulation option.
2. Specify the period of the power dissipation in the Averaging time window field. This must be an integer multiple of the
power dissipation signal, otherwise an incorrect average power calculation may result.
If the simulation is of an AC system (for example, an inverter), specify the Averaging time window as that of the AC period.
You can use an expression such as 1/60 or 1/50.
If the simulation is of a DC system (for example, a DC power supply), specify an integer multiple of the switching period. For
example if the switching frequency is 50 kHz, then you can enter 10/50k to specify 10 periods of the switching period.
3. Set the thermal network initialization method to Average power calculated during previous simulation. This initializes the
thermal network average power values with values that were recorded into a temporary file during the last simulation in
which Calculate average power during simulation was checked.
4. Run transient analysis for at least one full power dissipation cycle plus any time required for the electrical circuit to reach
steady state (that is, the currents through power inductors and voltages across DC capacitors have stabilized).
For example, if you are simulating a three-phase inverter where it takes 10 ms for the load inductances to reach steady state
(system operating in a pure 3-phase mode), and if the system is running at 50 Hz (20 ms), then you must simulate for at
least 30 ms. If you are simulating a DC power supply and the electrical transient is 3 ms, then you must simulate for
approximately 4 ms - 5 ms.
5. While monitoring the values of the junction temperature, run multiple transient analyses until the difference between
temperature values of subsequent simulation runs becomes acceptably small. If the power dissipation is not a function of
temperature, then the temperature values will converge after the second iteration. Otherwise, it may take four to five
iterations for the temperature to convergence to within a few degrees.
6. Once the steady-state junction temperature is found, you can use it to initialize the model by the using the Junction
temperature, user-defined method.
Specifying junction temperature values or average power dissipation values closer to their true values for the initial iteration typically
accelerates this procedure. With Calculate average power during simulation checked, run the simulation once with either the
Junction temperature, user-defined or the Average power, user-defined options selected and appropriate values entered. Then
switch to the Average power calculated during previous simulation option and continue with the iterative procedure.
It is recommended that you uncheck the Calculate average power during simulation option if you are not planning on using the
Average power calculated during previous simulation option in the subsequent simulation. In general, only use the Calculate
average power during simulation and the Average power calculated during previous simulation options for determining the
steady-steady temperature.
Note If you select the Average power calculated during previous simulation option, but no average power values were
ever calculated and saved for the instance of the model, then no power (0 Watts) will be injected into the thermal network during DC
Operating Point Analysis.
Additionally, because it saves average power values to a temporary file, the model will inject no power (0 Watts) if the computer's
temporary files are deleted or if the design is moved to another computer.
Buttons
Additional Settings Tab (IGBT Thermal Diode)
Blocking voltage used in calculation of switching losses
Multisim can automatically detect the block voltage used in the calculation of switching losses. In many cases however, this voltage
does not vary during operation, so you may specify it explicitly by selecting User-defined and entering the value. Specifying the
blocking voltage instead of relying on the model to detect it may result in slight improvements in the accuracy of the simulation.
Switching frequency used in calculation of switching losses
Multisim can automatically detect the model switching frequency, which is used in the calculation of switching losses. In most cases
however, the switching frequency does not vary during operation and so you may specify it explicitly by selecting User-defined and
entering the value. Specifying the switching frequency instead of relying on the model to detect it may result in slight improvements
in the accuracy of the simulation.
Loss Adjustment Factors
Adjustments to the switching calculations are required if the drive conditions are different from those used to produce the datasheet
values. A common difference might be in the value of the gate resistor. To adjust for differences in the gate resistor, use the
following procedure:
1. Sum the Eon and Eoff values corresponding to the gate resistor used in the datasheet (or simply note the Err value if
adjusting the diode switching losses).
2. Sum the Eon and Eoff values corresponding to the gate resistor used in your design (or simply note the Err value if adjusting
the diode switching losses).
3. Divide the value from step 2 by the value from step 1.
For example, assume the data sheet shows the Losses vs. Rg curve as shown in the example below.
Assume that the Losses vs Ic curves (which you use to parameterize the switching losses) are based on Rg=3.3ohms and that your
design uses Rg=10 ohms.
The total energy at Rg=3.3 is 0.8mJ+4.8mJ=5.6mJ. The total energy at Rg=10 is 2.75mJ+5.2mJ=7.95mJ. The IGBT switching
losses adjustment factor must therefore be set to 7.95/5.6=1.4.
Buttons
Example
The following circuit shows a three-phase IGBT inverter driving an inductive load.
The gate pin of each IGBT is driven by a sinusoidal PWM signal. The heat sink pins of all IGBTs are connected together, modeling
a thermal design where all six IGBTs are attached to the same heat sink.
The following graphs show the switching and conduction losses of the IGBT and diode in switch U1 over one cycle.
Notice that the switching losses are averaged over and update after each switching cycle. They are not power spikes as they would
be in a real design. However, the thermal capacitance of any practical thermal network is large enough to filter-out the power spike
such that only the DC component is reflected in the temperature. In other words, averaging the power spike over the length of the
switching period has an insignificant effect on the temperatures within the thermal network.
The conduction losses are instantaneous and true, reflecting the I x V product to the exclusion of the turn-on, turn-off transient.

Multisim Thermal Modeling

Transféré par

Informations du document

Description originale:

Copyright

Formats disponibles

Partager ce document

Partager ou intégrer le document

Options de partage

Avez-vous trouvé ce document utile ?

Ce contenu est-il inapproprié ?

Droits d'auteur :

Formats disponibles

Multisim Thermal Modeling

Transféré par

Droits d'auteur :

Formats disponibles

IGBT Thermal Diode Page 1 of 23

IGBT Thermal Diode

The model can be parameterized using information directly from datasheets.

Note This component is called IGBT_DIODE_THERMAL in the database.

Thermal Modeling Overview

Parameterization and Usage

IGBT model, control voltage High:

IGBT model, control voltage Low:

Switching Loss Calculation

FswSwitching frequency. This can be supplied as a parameter. Otherwise it is dynamically calculated.

IcThe switch current (when switch is On). This is dynamically calculated.

Conduction Loss Calculation

PcQ = Vce (Ic, Tj) . Ic

TjThe instantaneous junction temperature.

IcThe instantaneous switch current.

The same applies to the diode conduction losses.

Parameterization and Usage

IGBT Thermal Diode Symbol Pins

TjQ The thermal node representing the IGBT junction.

TjD The thermal node representing the diode junction.

Thermal Impedance Tab (IGBT Thermal Diode)

Electrical Tab (IGBT Thermal Diode)

This sub-tab contains the following:

IGBT forward The forward voltage drop of the IGBT.

Diode forward The forward voltage drop of the diode.

IGBT Conduction Losses Tab (IGBT Thermal Diode)

Diode Conduction Losses Tab (IGBT Thermal Diode)

IGBT Conduction Losses Tab (IGBT Thermal Diode)

Parameterize each curve using piecewise linear data. For example:

Be sure to include the 0,0 coordinate, as in the example below.

IGBT Switching Losses Tab (IGBT Thermal Diode)

Etotal/Inom = 0.1314 [mJ/A]

Diode Conduction Losses Tab (IGBT Thermal Diode)

Parameterize each curve using piecewise linear data. For example:

Be sure to include the 0,0 coordinate, as shown in the example below.

Diode Switching Losses Tab (IGBT Thermal Diode)

the temperature values corresponding to the two curves.

Thermal Impedance Tab (IGBT Thermal Diode)

Foster vs. Cauer Form

Configuration 1: Add additional thermal resistance is unchecked

Configuration 3: Add additional thermal resistance checked, Individual selected.

Initialization Tab (IGBT Thermal Diode)

Method 1: Specifying the junction temperature

Method 2: Specifying the average power dissipation

Method 3: Iterative method

1. Check the Calculate average power during simulation option.

Additional Settings Tab (IGBT Thermal Diode)

Blocking voltage used in calculation of switching losses

Switching frequency used in calculation of switching losses

Loss Adjustment Factors

3. Divide the value from step 2 by the value from step 1.

Vous aimerez peut-être aussi