Vous êtes sur la page 1sur 31

EE130 Lecture 12

Bipolar Junction Transistor


- Fundamentals
- Carrier and Current Analyses

Reading Assignment
1) Pierret : Chap 10 and Chap 11.1
2) Visualization http://jas.eng.buffalo.edu/
PNP or NPN Bipolar Junction Transistor
Narrow-Base vs. Wide-Base BJT.
Charge Flow into/out-of the Base region

Professor Nathan Cheung, U.C. Berkeley 1


Integrated Circuit npn BJT Structure (schematic)

Cross-section
DOPING PROFILES UNDER EMITTER
B E C
log N(x)
1E20
SiO2 subcollector
n+ n+ emitter profile
1E18
p (base)
base profile
n (collector)
collector
1E15
profile
n+ subcollector x

p - substrate
High resistance path
Low resistance path

Professor Nathan Cheung, U.C. Berkeley 2


Professor Nathan Cheung, U.C. Berkeley 3
Common emitter
output
characteristics

Professor Nathan Cheung, U.C. Berkeley 4


Energy Band at Thermal Equilibrium
Note:
W = quasi-neutral
base width.
Same symbol W
was used as depletion
width by textbook in
pn junction chapters

Quasi-neutral
regions

Professor Nathan Cheung, U.C. Berkeley 5


Charge Density (x)

Electric Field E(x)

Professor Nathan Cheung, U.C. Berkeley 6


With Applied Bias
( e.g. VEB>0; forward biased and VCB<0; reverse biased)
Diffusion of thermally
drift by E-field of generated carrier ~0
Depletion region
injection

With bias
With bias
recombination

injection diffusion
drift by E-field of
Depletion region
Professor Nathan Cheung, U.C. Berkeley 7
Hole flux Electron flux Current

CURRENT COMPONENTS OF PNP BJT

IEp P+ N P ICp

IE IC
injection recombination

IEn ICBo
}
Reverse Saturation
current

VEB>0; forward biased


VCB<0; reverse biased IB
Professor Nathan Cheung, U.C. Berkeley 8
Professor Nathan Cheung, U.C. Berkeley 9
Professor Nathan Cheung, U.C. Berkeley 10
Four Modes of Operation

VEB (pnp) Emitter-base Junction


forward biased
VBE (npn)

Active Saturation
(forward active)
0 VCB (pnp)
VBC (npn)
Cutoff Inverted Collector-base Junction
forward biased
Active
(reverse active)

Professor Nathan Cheung, U.C. Berkeley 11


Professor Nathan Cheung, U.C. Berkeley 12
Good BJT Design:

Injected minority carriers do not


recombine in the neutral base region

Emitter current is comprised almost


entirely of carriers injected into the base
(rather than carriers injected into the
emitter)

Professor Nathan Cheung, U.C. Berkeley 13


Professor Nathan Cheung, U.C. Berkeley 14
Professor Nathan Cheung, U.C. Berkeley 15
Professor Nathan Cheung, U.C. Berkeley 16
Professor Nathan Cheung, U.C. Berkeley 17
Example: Active-Mode Minority Carrier Distribution

0
0
Professor Nathan Cheung, U.C. Berkeley 18
Professor Nathan Cheung, U.C. Berkeley 19
Professor Nathan Cheung, U.C. Berkeley 20
Professor Nathan Cheung, U.C. Berkeley 21
Professor Nathan Cheung, U.C. Berkeley 22
Professor Nathan Cheung, U.C. Berkeley 23
Professor Nathan Cheung, U.C. Berkeley 24
Professor Nathan Cheung, U.C. Berkeley 25
Professor Nathan Cheung, U.C. Berkeley 26
Professor Nathan Cheung, U.C. Berkeley 27
Professor Nathan Cheung, U.C. Berkeley 28
Professor Nathan Cheung, U.C. Berkeley 29
Minority Carriers ( no recombination in quasi-neutral regions)

V >0 V <0 V <0 V >0


BE BC BE BC

C
pno C
pno
E
pno E
pno
x xB xC x xB xC
E E
(1) Forward Active (2) Reverse Active

V >0 V >0 V <0 V <0


BE BC BE BC

C
pno C
pno
E
pno E
pno
x xB x x xB x
E C E C
(3) Saturation (4) Cut-off
Professor Nathan Cheung, U.C. Berkeley Example: NE> NB> NC 30
Minority Carriers ( with recombination in quasi-neutral regions)
V >0 V <0 V <0 V >0
BE BC BE BC

C
pno C
pno
E
pno E
pno
x xB xC x xB xC
E E
(1) Forward Active (2) Reverse Active

V >0 V >0 V <0 V <0


BE BC BE BC

C
pno C
pno
E
pno E
pno
x xB xC x xB xC
E E
(3) Saturation (4) Cut-off
Professor Nathan Cheung, U.C. Berkeley Example: NE> NB> NC 31

Vous aimerez peut-être aussi