FOUR KEY TESTS: Validating MOSFET Performance in Power Supply Designs

Drain Family of Curves Threshold Voltage Gate Leakage Transconductance

Definition: Transistor output characteristics plotted Definition: The minimum gate-to-source voltage Definition: Transistor gate leakage current as Definition: The change in the drain current divided
as IDS versus VDS for several values of VGS. differential required to produce current flow from the a function of the gate voltage. by the small change in the gate/source voltage with
Measurement Parameter: IDS vs. VDS source to drain. Measurement Parameter: IG vs. VG a constant drain/source voltage.
Importance in Device Selection: By looking at these Measurement Parameter: VTH Importance in Device Selection: The gate leakage Measurement Parameter: ID vs. VGS
TEST SPECIFICATIONS

curves, the designer can determine the best operating
point for the application. At low drain-source voltages,
the MOSFET behaves like a variable resistance whose
value is controlled by the applied gate-source voltage. At
higher drain-source voltages, the MOSFET passes a cur-
rent whose value depends on the applied gate-source
voltage. In most circuits, it is used in this high voltage
region and acts as a voltage-controlled current source.
Test Technique:
1. Step the gate voltage (VGS) across the desired
range of values at specified increments.
2. At each VGS value, VDS is swept across
the desired VDS range.
3. Measure the drain-source current (IDS)
at each VDS increment.
Importance in Device Selection: Threshold voltage current is important when calculating how much cur- Importance in Device Selection: Transconductance
is important for determining the on-state and the rent is required to keep the device turned on. Because helps the engineer to choose the best MOSFET with
off-state of the MOSFET. VGS (th) is defined where it is a leakage current through an insulator, this current the right amount of gain (amplification) for the designs.
VDS = VGS, although it is sometimes quoted for is independent of temperature.
a fixed VDS (e.g. 10 V.)
Test Technique: Test Technique: Test Technique:
1. Sweep the gate voltage (VGS) while the drain- 1. Sweep the gate voltage (VG) over the desired 1. Sweep the gate voltage (VGS) over the
source voltage (VDS) is set to a particular value. range while the drain and source are tied
desired range, while maintaining a constant
to common. drain/source voltage (VDS.)
2. Measure the drain current (ID) at each value
incremental of VGS in the sweep. 2. Measure the gate current (IG). 2. Measure the drain current (ID) at each
3. Determine the threshold voltage (VTH) through increment step of VGS.
a linear curve fit. A linear region on the curve is 3. Calculate transconductance (gm) by
selected. The interception of the voltage axis dividing the small changes in ID by the small
gives the threshold voltage.
changes in VGS. gm = ID / VGS.

Drain Drain Drain Drain

TEST CONFIGURATION

MOSFET MOSFET MOSFET MOSFET

Gate Gate Gate Gate

Force HI Force HI Force HI Force HI Force HI Force HI Force HI

Source Source Source Source

A SMU A SMU A SMU A SMU A SMU A SMU A SMU

CH1 CH2 CH1 CH2 CH1 CH2

Force LO Force LO Force LO Force LO Force LO Force LO Force LO

n-MOSFET Threshold Voltage-Linear n-MOSFET Transconductance

n-MOSFET Drain Family n-MOSFET Gate Leakage Current
30.0E-3 MAX Gm and Threshold Voltage
VGS = 5V 7.0E-3 4.0E-3
12.0E-3 1.6E-13
Gate Resistance can be
TYPICAL RESULTS

derived from a linear curve fit. Max Gm = 3.02e-3

1.4E-13 : 6.0E-3
Gate Resistance (Ohms)
10.0E-3 Siemens at a Vgs - 1.7V
Data:RES = 5.10170e+013
3.0E-3
Drain Current (A)

1.2E-13 At 4.4V, the Gate 5.0E-3

Drain Current (A)

20.0E-3 VGS = 4V

Drain Current (A)

Drain Current (A)

At 1.3V, the Gate Leakage Current

8.0E-3
1.0E-13 Leakage Current is 0.162pA .
is 0.105pA. 4.0E-3

GM(S)
6.0E-3 8.0E-14 2.0E-3

VGS = 3V 3.0E-3
10.0E-3 6.0E-14
4.0E-3 The interception of the
voltage axis gives the 2.0E-3
4.0E-14 1.0E-3
Threshold Voltage.
VGS = 2V 2.0E-3 1.0E-3 Gm curve calculated at
2.0E-14
each I and V point (I/ V)
Threshold Voltage (V):
0.0E+0 0.0E+00 Data:VT = 1.30626
0.0E+0 0.0E+3 0.0E+0
0.0E+0 1.0E+0 2.0E+0 3.0E+0 4.0E+0 5.0E+0 Threshold Voltage (V)
0.0E+0 1.0E+0 2.0E+0 3.0E+0 4.0E+0
Data VT = 1.368825.0E+0 0.0E+00 1.0E+00 2.0E+00 3.0E+00 4.0E+00 5.0E+00 0.0E+00 1.0E+0 2.0E+0 3.0E+0 4.0E+0 5.0E+0

Drain Voltage (V) Gate Voltage (V) Gate Voltage (V) Gate Voltage (V)

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