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Data Sheet
The following document contains information on Spansion memory products. Although the document
is marked with the name of the company that originally developed the specification, Spansion will
continue to offer these products to existing customers.
Continuity of Specifications
There is no change to this data sheet as a result of offering the device as a Spansion product. Any
changes that have been made are the result of normal data sheet improvement and are noted in the
document revision summary, where supported. Future routine revisions will occur when appropriate,
and changes will be noted in a revision summary.
Am29BL802C
8 Megabit (512 K x 16-Bit)
CMOS 3.0 Volt-only Burst Mode Flash Memory
DISTINCTIVE CHARACTERISTICS
32 words sequential with wrap around (linear Embedded Algorithms
32), bottom boot Embedded Erase algorithm automatically
One 8 Kword, two 4 Kword, one 48 Kword, three preprograms and erases the entire chip or any
64 Kword, and two 128 Kword sectors combination of designated sectors
Embedded Program algorithm automatically
Single power supply operation
writes and verifies data at specified addresses
Regulated voltage range: 3.0 to 3.6 volt read and
write operations and for compatibility with high Minimum 100,000 erase cycle guarantee
performance 3.3 volt microprocessors per sector
20-year data retention
Read access times
Compatibility with JEDEC standards
Burst access times as fast as 17 ns at industrial
temperature range (18 ns at extended Pinout and software compatible with single-
temperature range) power supply Flash
Initial/random access times as fast as 65 ns Superior inadvertent write protection
Alterable burst length via BAA# pin Backward-compatible with AMD Am29LV and
Am29F flash memories: powers up in
Power dissipation (typical)
asynchronous mode for system boot, but can
Burst Mode Read: 15 mA @ 25 MHz, immediately be placed into burst mode
20 mA @ 33 MHz, 25 mA @ 40 MHz
Data# Polling and toggle bits
Program/Erase: 20 mA
Provides a software method of detecting
Standby mode, CMOS: 3 A
program or erase operation completion
5 V-tolerant data, address, and control signals
Ready/Busy# pin (RY/BY#)
Sector Protection
Provides a hardware method of detecting
Implemented using in-system or via program or erase cycle completion
programming equipment
Erase Suspend/Erase Resume
Temporary Sector Unprotect feature allows code
changes in previously locked sectors Suspends an erase operation to read data from,
or program data to, a sector that is not being
Unlock Bypass Program Command
erased, then resumes the erase operation
Reduces overall programming time when
Hardware reset pin (RESET#)
issuing multiple program command sequences
Hardware method to reset the device for reading
array data
Package Option
56-pin SSOP
This Data Sheet states AMDs current specifications regarding the Products described herein. This Data Sheet may Publication# 22371 Rev: C Amendment: 7
be revised by subsequent versions or modifications due to changes in technical specifications. Issue Date: November 3, 2006
D A T A S H E E T
GENERAL DESCRIPTION
The Am29BL802C is an 8 Mbit, 3.0 Volt-only burst before executing the erase operation. During erase, the
mode Flash memory devices organized as 524, 288 device automatically times the erase pulse widths and
words. The device is offered in a 56-pin SSOP verifies proper cell margin.
package. These devices are designed to be pro-
The host system can detect whether a program or
grammed in-system with the standard system 3.0-volt
erase operation is complete by observing the RY/BY#
VCC supply. A 12.0-volt VPP or 5.0 VCC is not required
pin, or by reading the DQ7 (Data# Polling) and DQ6
for program or erase operations. The device can also
(toggle) status bits. After a program or erase cycle has
be programmed in standard EPROM programmers.
been completed, the device is ready to read array data
The device offers access times of 65, 70, 90, and 120 or accept another command.
ns, allowing high speed microprocessors to operate
The sector erase architecture allows memory sectors
without wait states. To eliminate bus contention the
to be erased and reprogrammed without affecting the
device has separate chip enable (CE#), write enable
data contents of other sectors. The device is fully
(WE#) and output enable (OE#) controls.
erased when shipped from the factory.
Burst Mode Features Hardware data protection measures include a low VCC
The Am29BL802C offers a Linear Burst modea detector that automatically inhibits write operations dur-
32 word sequential burst with wrap aroundin a ing power transitions. The hardware sector protection
bottom boot configuration only. This devices require feature disables both program and erase operations in
additional control pins for burst operations: Load any combination of the sectors of memory. This can be
Burst Address (LBA#), Burst Address Advance achieved in-system or via programming equipment.
(BAA#), and Clock (CLK). This implementation allows
The Erase Suspend/Erase Resume feature enables
easy interface with minimal glue logic to a wide range
the user to put erase on hold for any period of time to
of microprocessors/microcontrollers for high perfor-
read data from, or program data to, any sector that is
mance read operations.
not selected for erasure. True background erase can
AMD Flash Memory Features thus be achieved.
Each device requires only a single 3.0 volt power The hardware RESET# pin terminates any operation
supply for both read and write functions. Internally in progress and resets the internal state machine to
generated and regulated voltages are provided for the reading array data. The RESET# pin may be tied to the
program and erase operations. The I/O and control system reset circuitry. A system reset would thus also
signals are 5V tolerant. reset the device, enabling the system microprocessor
to read the boot-up firmware from the Flash memory.
The Am29BL802C is entirely command set compatible
with the JEDEC single-power-supply Flash stan- The device offers two power-saving features. When ad-
dard. Commands are written to the command register dresses have been stable for a specified amount of
using standard microprocessor write timings. Register time, the device enters the automatic sleep mode.
contents serve as input to an internal state-machine The system can also place the device into the standby
that controls the erase and programming circuitry. mode. Power consumption is greatly reduced in both
Write cycles also internally latch addresses and data these modes.
needed for the programming and erase operations.
AMDs Flash technology combines years of Flash
Reading data out of the device is similar to reading
memory manufacturing experience to produce the
from other Flash or EPROM devices.
highest levels of quality, reliability and cost effectiveness.
Device erasure occurs by executing the erase com- The device electrically erases all bits within a sector
mand sequence. This initiates the Embedded Erase simultaneously via Fowler-Nordheim tunneling. The
algorithman internal algorithm that automatically data is programmed using hot electron injection.
preprograms the array (if it is not already programmed)
TABLE OF CONTENTS
This page left intentionally blank. . . . . . . . . . . . . 2 DQ7: Data# Polling ................................................................. 21
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 4 Figure 7. Data# Polling Algorithm .................................................. 21
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 RY/BY#: Ready/Busy# ............................................................ 22
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . 5 DQ6: Toggle Bit I .................................................................... 22
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . 6 DQ2: Toggle Bit II ................................................................... 22
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Reading Toggle Bits DQ6/DQ2 ............................................... 22
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 7 DQ5: Exceeded Timing Limits ................................................ 23
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . 8 DQ3: Sector Erase Timer ....................................................... 23
Table 1. Device Bus Operations .......................................................8 Figure 8. Toggle Bit Algorithm........................................................ 23
Requirements for Reading Array Data Array in Asynchronous Table 5. Write Operation Status ..................................................... 24
(Non-Burst) Mode ..................................................................... 9 Absolute Maximum Ratings. . . . . . . . . . . . . . . . . 25
Requirements for Reading Array Data in Synchronous Figure 9. Maximum Negative Overshoot Waveform ...................... 25
(Burst) Mode ............................................................................. 9 Figure 10. Maximum Positive Overshoot Waveform...................... 25
Burst Suspend/Burst Resume Operations ................................ 9 Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . 25
IND# End of Burst Indicator .................................................... 10 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 11. ICC1 Current vs. Time (Showing Active and Automatic
Writing Commands/Command Sequences ............................ 10
Sleep Currents) .............................................................................. 27
Program and Erase Operation Status .................................... 10
Figure 12. Typical ICC1 vs. Frequency ........................................... 27
Standby Mode ........................................................................ 10
Test Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Automatic Sleep Mode ........................................................... 10 Figure 13. Test Setup..................................................................... 28
RESET#: Hardware Reset Pin ............................................... 10 Table 6. Test Specifications ........................................................... 28
Output Disable Mode .............................................................. 11 Key to Switching Waveforms .................................................. 28
Table 2. Sector Address Table ........................................................11 Figure 14. Input Waveforms and Measurement Levels ................. 28
Autoselect Mode..................................................................... 12 AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 29
Table 3. Am29BL802C Autoselect Codes (High Voltage Method) ..12 Figure 15. Conventional Read Operations Timings ....................... 31
Sector Protection/Unprotection ............................................... 12 Figure 16. Burst Mode Read .......................................................... 31
Figure 1. In-system Sector Protect/Unprotect Algorithms ............... 13 Figure 17. RESET# Timings .......................................................... 32
Temporary Sector Unprotect .................................................. 14 Figure 18. Program Operation Timings.......................................... 34
Figure 2. Temporary Sector Unprotect Operation........................... 14 Figure 19. Chip/Sector Erase Operation Timings .......................... 35
Hardware Data Protection . . . . . . . . . . . . . . . . . . 14 Figure 20. Data# Polling Timings (During Embedded Algorithms). 36
Low VCC Write Inhibit .............................................................. 14 Figure 21. Toggle Bit Timings (During Embedded Algorithms)...... 36
Write Pulse Glitch Protection ............................................... 14 Figure 22. DQ2 vs. DQ6 for Erase and Erase
Logical Inhibit .......................................................................... 14 Suspend Operations .................................................................... 37
Power-Up Write Inhibit ............................................................ 14 Figure 23. Temporary Sector Unprotect Timing Diagram .............. 37
Figure 24. Sector Protect/Unprotect Timing Diagram .................... 38
Command Definitions . . . . . . . . . . . . . . . . . . . . . 14
Figure 25. Alternate CE# Controlled Write Operation Timings ...... 40
Reading Array Data in Non-burst Mode ................................. 14
Erase and Programming Performance . . . . . . . . 41
Reading Array Data in Burst Mode ......................................... 15
Latchup Characteristics . . . . . . . . . . . . . . . . . . . . 41
Figure 3. Burst Mode Read with 40 MHz CLK, 65 ns tIACC,
18 ns tBACC Parameters.................................................................. 15
SSOP Pin Capacitance . . . . . . . . . . . . . . . . . . . . . 41
Figure 4. Burst Mode Read with 25 MHz CLK, 70 ns tIACC, Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
24 ns tBACC Parameters................................................................. 16 Physical Dimensions*. . . . . . . . . . . . . . . . . . . . . . 42
Reset Command ..................................................................... 16 SSO05656-Pin Shrink Small Outline Package .................... 42
Autoselect Command Sequence ............................................ 16 Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 43
Program Command Sequence ............................................... 16 Revision A (June 1, 1999) ...................................................... 43
Unlock Bypass Command Sequence ..................................... 17 Revision A+1 (June 25, 1999) ................................................ 43
Figure 5. Program Operation .......................................................... 17 Revision B (November 29, 1999) ............................................ 43
Chip Erase Command Sequence ........................................... 17 Revision C (June 20, 2000) .................................................... 43
Sector Erase Command Sequence ........................................ 18 Revision C+1 (November 16, 2000) ....................................... 43
Figure 6. Erase Operation............................................................... 18 Revision C+2 (July 22, 2002) ................................................. 43
Erase Suspend/Erase Resume Commands ........................... 18 Revision C+3 (November 22, 2002) ....................................... 43
Asynchronous Mode ............................................................... 18 Revision C+4 (June 4, 2004) .................................................. 44
Burst Mode ............................................................................. 19 Revision C+5 (February 28, 2005) ......................................... 44
General ................................................................................... 19 Revision C+6 (June 29, 2005) ................................................ 44
Command Definitions ............................................................. 20 Revision C7 (November 3, 2006) ........................................... 44
Table 4. Am29BL802C Command Definitions ................................20
Write Operation Status . . . . . . . . . . . . . . . . . . . . 21
Speed Regulated Voltage Range: VCC =3.03.6 V 65R 70R 90R 120R
Option Temperature Range: Industrial (I), Extended (E) I E I, E I, E I, E
BLOCK DIAGRAM
DQ0DQ15
RY/BY#
IND#
VCC
VSS Sector
Switches
Input/Output IND#
RESET# Buffers Buffer
Erase Voltage
Generator
WE# State
Control
Command
PGM Voltage
Register
Generator Chip Enable
Output Enable
CE# STB
Logic Data Latch
OE#
A3, A4
A0A2
Y-Gating
STB Y-Decoder
VCC Detector Timer
Address Latch
A0A18
X-Decoder Cell Matrix
A0A4
A3, A4
CONNECTION DIAGRAMS
WE# 1 56 LBA#
RESET# 2 55 VCC
RY/BY# 3 54 NC
A18 4 53 NC
A17 5 56-Pin SSOP 52 A8
A7 6 51 A9
A6 7 50 A10
A5 8 49 A11
A4 9 48 A12
A3 10 47 A13
A2 11 46 A14
A1 12 45 A15
A0 13 44 A16
CE# 14 43 NC
NC 15 42 NC
VSS 16 41 VSS
OE# 17 40 DQ15
DQ0 18 39 DQ7
DQ8 19 38 DQ14
DQ1 20 37 DQ6
DQ9 21 36 DQ13
DQ2 22 35 DQ5
DQ10 23 34 DQ12
DQ3 24 33 DQ4
DQ11 25 32 VCC
VSS 26 31 VCC
CLK 27 30 IND#
BAA# 28 29 NC
ORDERING INFORMATION
Standard Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combi-
nation) is formed by a combination of the elements below.
Am29BL802C B 65R Z I
TEMPERATURE RANGE
I = Industrial (40C to +85C)
E = Extended (40C to +125C)
F = Industrial (40C to +85C) for Pb-free Package
K = Extended (40C to +125C) for Pb-free Package
PACKAGE TYPE
Z = 56-Pin Shrink Small Outline Package (SSO056)
SPEED OPTION
See Product Selector Guide and Valid Combinations
DEVICE NUMBER/DESCRIPTION
Am29BL802C
8 Megabit (512 K x 16-Bit) CMOS High Performance Burst Mode Flash Memory
3.0 Volt-only Read, Program, and Erase
Legend:
L = Logic Low = VIL, H = Logic High = VIH, SA = Sector Address, X = Dont care.
Notes:
1. Addresses are A18:A0.
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the Sector
Protection/Unprotection section.
Requirements for Reading Array Data the device. The first burst data is available after the
Array in Asynchronous (Non-Burst) Mode initial access time (tIACC) from the rising edge of the
CLK that loads the burst address. After the initial
To read array data from the outputs, the system must access, subsequent burst data is available tBACC after
drive the CE# and OE# pins to VIL. CE# is the power each rising edge of CLK.
control and selects the device. OE# is the output control
and gates array data to the output pins. WE# should re- The device increments the address at each rising edge
main at VIH. of the clock cycles while BAA# is asserted low. The 5-
bit burst address counter is set to 00000b at the
Address access time (tACC) is equal to the delay from starting address. When the burst address counter is
stable addresses to valid output data. The chip enable reaches 11111b, the device outputs the last word in the
access time (t C E ) is the delay from the stable burst sequence, and outputs a low on IND#. If the
addresses and stable CE# to valid data at the output system continues to assert BAA#, on the next CLK the
pins. The output enable access time is the delay from device will output the data for the starting addressthe
the falling edge of OE# to valid data at the output pins burst address counter will have wrapped around to
(assuming the addresses have been stable for at least 00000b. For example, if the initial address is xxxx0h,
tACCtOE time). the data order will be 0-1-2-3.....28-29-30-31-0-1...; if
The internal state machine is set for reading array the initial address is xxxx2h, the data order will be 2-3-
data in the upon device power-up, or after a hardware 4-5.....28-29-30-31-0-1-2-3...; if the initial address is
reset. This ensures that no spurious alteration of the xxxx8h, the data order will be 8-9-10-11.....30-31-0-1-
memory content occurs during the power transition. 2-3-4-5-6-7-8-9....; and so on. Data will be repeated if
No command is necessary in this mode to obtain array more than 32 clocks are supplied, and BAA# remains
data. Standard microprocessor read cycles that as- asserted low.
sert valid addresses on the device address inputs pro- A burst mode read operation is terminated using one of
duce valid data on the device data outputs. The device three methods:
remains enabled for read access until the command
register contents are altered. In the first method, CE# is asserted high. The
device in this case remains in burst mode;
See Reading Array Data in Non-burst Mode for more asserting LBA# low terminates the previous
information. Refer to the AC Read Operations table for burst read cycle and starts a new burst read
timing specifications and to Figure 15 for the timing di- cycle with the address that is currently valid.
agram. ICC1 in the DC Characteristics table represents
the active current specification for reading array data. In the second method, the Burst Disable
command sequence is written to the device. The
Requirements for Reading Array Data in device halts the burst operation and returns to
the asynchronous mode.
Synchronous (Burst) Mode
In the third method, RESET# is asserted low. All
The device offers fast 32-word sequential burst reads opertations are immediately terminated, and the
and is used to support microprocessors that implement device will revert to the asynchronous mode.
an instruction prefetch queue, as well as large data
transfers during system configuration. Note that writing the reset command will not terminate
the burst mode.
Three additional pinsLoad Burst Address (LBA#),
Burst Address Advance (BAA#), and Clock (CLK) Burst Suspend/Burst Resume Operations
allow interfacing to microprocessors and microcontrol-
The device offers Burst Suspend and Burst Resume
lers with minimal glue logic. Burst mode read is a syn-
operations. When both OE# and BAA# are taken high,
chronous operation tied to the rising edge of CLK. CE#,
the device removes (suspends) the data from the
OE#, and WE# are asynchronous (relative to CLK).
outputs (because OE# is high), but holds the data
When the device is in asynchronous mode (after internally. The device resumes burst operation when
power-up or RESET# pulse), any signals on the CLK, either OE# and/or BAA# is asserted low. Asserting the
LBA#, and BAA# inputs are ignored. The device oper- OE# only causes the device to present the same data
ates as a conventional flash device, as described in the that was held during the Burst Suspend operation. As
previous section. long as BAA# is high, the device will continue to output
that word of data. Asserting both OE# and BAA# low
To enable burst mode operation, the system must issue
resumes the burst operation, and on the next rising
the Burst Mode Enable command sequence (see Table
edge of CLK, increments the counter and outputs the
4). After the device has entered the burst mode, the
next word of data.
system must assert Load Burst Address (LBA#) low for
one clock period, which loads the starting address into
IND# End of Burst Indicator outputs are placed in the high impedance state, inde-
pendent of the OE# input.
The IND# output signal goes low when the device is
ouputting the last word of a 32-word burst sequence The device enters the CMOS standby mode when the
(word Da+31). When the starting address was loaded CE# and RESET# pins are both held at VCC 0.3 V.
with LBA#, the 5-bit burst address counter was set to (Note that this is a more restricted voltage range than
00000b. The counter increments to 11111b on the VIH.) If CE# and RESET# are held at VIH, but not within
32nd word in the burst sequence. If the system con- VCC 0.3 V, the device will be in the standby mode, but
tinues to assert BAA# low, on the next CLK the device the standby current will be greater. The device requires
will output the starting address data (Da). The burst standard access time (tCE) for read access when the de-
address counter will be again set to 00000b, and will vice is in either of these standby modes, before it is
have wrapped around. ready to read data.
If the device is deselected during erasure or program-
Writing Commands/Command Sequences
ming, the device draws active current until the operation
To write a command or command sequence (which in- is completed.
cludes programming data to the device and erasing sec-
tors of memory), the system must drive WE# and CE# to In the DC Characteristics table, ICC3 and ICC4 represents
VIL, and OE# to VIH. the standby current specification.
The device features an Unlock Bypass mode to facili- Automatic Sleep Mode
tate faster programming. Once the device enters the Un-
The automatic sleep mode minimizes Flash device
lock Bypass mode, only two write cycles are required to
energy consumption. The device automatically enables
program a word, instead of four. The Program Com-
this mode when addresses remain stable for tACC + 30
mand Sequence section has details on programming
ns. The automatic sleep mode is independent of the
data to the device using both standard and Unlock By-
CE#, WE#, and OE# control signals. Standard address
pass command sequences.
access timings provide new data when addresses are
An erase operation can erase one sector, multiple sec- changed. While in sleep mode, output data is latched
tors, or the entire device. Table 2 indicates the address and always available to the system. ICC4 in the DC
space that each sector occupies. A sector address Characteristics table represents the automatic sleep
consists of the address bits required to uniquely select a mode current specification.
sector. The Command Definitions section has details
on erasing a sector or the entire chip, or suspending/re- RESET#: Hardware Reset Pin
suming the erase operation. The RESET# pin provides a hardware method of reset-
After the system writes the autoselect command se- ting the device to reading array data. When the system
quence, the device enters the autoselect mode. The sys- drives the RESET# pin to VIL for at least a period of tRP,
tem can then read autoselect codes from the internal the device immediately terminates any operation in
register (which is separate from the memory array) on progress, tristates all data output pins, and ignores all
DQ7DQ0. Standard read cycle timings apply in this read/write attempts for the duration of the RESET#
mode. Refer to the Autoselect Mode and Autoselect pulse. The device also resets the internal state machine
Command Sequence sections for more information. to reading array data. The operation that was interrupted
should be reinitiated once the device is ready to accept
ICC2 in the DC Characteristics table represents the ac- another command sequence, to ensure data integrity.
tive current specification for the write mode. The AC
Characteristics section contains timing specification ta- Current is reduced for the duration of the RESET#
bles and timing diagrams for write operations. pulse. When RESET# is held at VSS0.3 V, the device
draws CMOS standby current (ICC4). If RESET# is held
Program and Erase Operation Status at VIL but not within VSS0.3 V, the standby current will
be greater.
During an erase or program operation, the system may
check the status of the operation by reading the status The RESET# pin may be tied to the system reset cir-
bits on DQ7DQ0. Standard read cycle timings and ICC cuitry. A system reset would thus also reset the Flash
read specifications apply. Refer to Write Operation Sta- memory, enabling the system to read the boot-up firm-
tus for more information, and to AC Characteristics for ware from the Flash memory.
timing diagrams.
If RESET# is asserted during a program or erase oper-
ation, the RY/BY# pin remains a 0 (busy) until the inter-
Standby Mode
nal reset operation is complete, which requires a time of
When the system is not reading or writing to the device, tREADY (during Embedded Algorithms). The system can
it can place the device in the standby mode. In this thus monitor RY/BY# to determine whether the reset op-
mode, current consumption is greatly reduced, and the eration is complete. If RESET# is asserted when a pro-
gram or erase operation is not executing (RY/BY# pin is Output Disable Mode
1), the reset operation is completed within a time of
When the OE# input is at VIH, output from the device is
tREADY (not during Embedded Algorithms). The system
disabled. The output pins are placed in the high imped-
can read data tRH after the RESET# pin returns to VIH.
ance state.
Refer to the AC Characteristics tables for RESET# pa-
rameters and to Figure 17 for the timing diagram.
Device ID:
Am29BL802CB L L H X X VID X L X L H 0081h
(Bottom Boot Block)
0001h (protected)
Sector Protection Verification L L H SA X VID X L X H L
0000h (unprotected)
0000h
(non-burst mode)
Burst Mode Status L L H X X VID X L X H H
0001h
(burst mode)
L = Logic Low = VIL, H = Logic High = VIH, SA = Sector Address, X = Dont care.
Note: The autoselect codes may also be accessed in-system via command sequences. See Table 4.
Sector Protection/Unprotection The primary method requires VID on the RESET# pin
only, and can be implemented either in-system or via
The hardware sector protection feature disables both
programming equipment. Figure 1 shows the algo-
program and erase operations in any sector. The hard-
rithms and Figure 24 shows the timing diagram. This
ware sector unprotection feature re-enables both program
method uses standard microprocessor bus cycle
and erase operations in previously protected sectors.
timing. For sector unprotect, all unprotected sectors
The device is shipped with all sectors unprotected. must first be protected prior to the first sector unprotect
AMD offers the option of programming and protecting write cycle.
sectors at its factory prior to shipping the device
The alternate method intended only for programming
through AMDs ExpressFlash Service. Contact an
equipment requires VID on address pin A9 and OE#.
AMD representative for details.
This method is compatible with programmer routines
It is possible to determine whether a sector is protected written for earlier 3.0 volt-only AMD flash devices. De-
or unprotected. See Autoselect Mode for details. tails on this method are provided in a supplement, pub-
lication number 22372, available on
Sector protection/unprotection can be implemented via
www.spansion.com.
two methods.
START START
Yes Yes
Set up sector
No All sectors
address
protected?
Sector Protect:
Yes
Write 60h to sector
address with Set up first sector
A6 = 0, A1 = 1, address
A0 = 0
Sector Unprotect:
Wait 150 s
Write 60h to sector
address with
Verify Sector A6 = 1, A1 = 1,
Protect: Write 40h A0 = 0
to sector address Reset
Increment with A6 = 0, PLSCNT = 1 Wait 15 ms
PLSCNT A1 = 1, A0 = 0
Verify Sector
Read from
Unprotect: Write
sector address
40h to sector
with A6 = 0,
address with
A1 = 1, A0 = 0 Increment A6 = 1, A1 = 1,
No PLSCNT A0 = 0
No
PLSCNT Data = 01h? Read from
= 25? sector address
with A6 = 1,
Yes A1 = 1, A0 = 0
Yes No
Set up
next sector
Yes No
PLSCNT address
Protect another Data = 00h?
Device failed = 1000?
sector?
No Yes Yes
Remove VID
from RESET# Last sector No
Device failed verified?
Write reset
Yes
command
Remove VID
Sector Protect Sector Protect
Sector Unprotect from RESET#
Sector Unprotect
complete
Logical Inhibit
Temporary Sector Write cycles are inhibited by holding any one of OE# =
Unprotect Completed VIL, CE# = VIH or WE# = VIH. To initiate a write cycle,
(Note 2)
CE# and WE# must be a logical zero while OE# is a
logical one.
Notes:
Power-Up Write Inhibit
1. All protected sectors unprotected.
If WE# = CE# = VIL and OE# = VIH during power up, the
2. All previously protected sectors are protected once
again. device does not accept commands on the rising edge
of WE#. The internal state machine is automatically
Figure 2. Temporary Sector Unprotect Operation reset to reading array data on power-up.
COMMAND DEFINITIONS
Writing specific address and data commands or se- retrieve data. The device is also ready to read array
quences into the command register initiates device op- data after completing an Embedded Program or Em-
erations. Table 4 defines the valid register command bedded Erase algorithm.
sequences. Writing incorrect address and data val-
After the device accepts an Erase Suspend com-
ues or writing them in the improper sequence resets
mand, the device enters the Erase Suspend mode.
the device to reading array data.
The system can read array data using the standard
All addresses are latched on the falling edge of read timings, except that if it reads at an address
WE# or CE#, whichever happens later. All data is within erase-suspended sectors, the device outputs
latched on the rising edge of WE# or CE#, whichever status data. After completing a programming opera-
happens first. Refer to the appropriate timing diagrams tion in the Erase Suspend mode, the system may
in the AC Characteristics section. once again read array data with the same exception.
See Erase Suspend/Erase Resume Commands for
Reading Array Data in Non-burst Mode more information on this mode.
The device is automatically set to reading array data The system must issue the reset command to re-en-
after device power-up. No commands are required to able the device for reading array data if DQ5 goes high,
or while in the autoselect mode. See the Reset Com- least the next rising edge of the CLK signal, upon
mand section, next. which the device loads the initial burst address.
See also Requirements for Reading Array Data Array in 2. The system returns LBA# to a logic high. The device
Asynchronous (Non-Burst) Mode in the Key to Switch- requires that the next rising edge of CLK occur with
ing Waveforms section for more information. The Read LBA# high for proper burst mode operation. Typi-
Operations table provides the read parameters, and Fig- cally, the initial number of CLK cycles depends on
ure 15 shows the timing diagram. the clock frequency and the rated speed of the de-
vice.
Reading Array Data in Burst Mode 3. After the initial data has been read, the system as-
The device powers up in the non-burst mode. To read serts BAA# low to indicate it is ready to read the re-
array data in burst mode, the system must write the maining burst read cycles. Each successive rising
four-cycle Burst Mode Enable command sequence edge of the CLK signal then causes the flash device
(see Table 4). The device then enters burst mode. In to increment the burst address and output sequen-
addition to asserting CE#, OE#, and WE# control sig- tial burst data.
nals, burst mode operation requires that the system 4. When the device outputs the last word of data in the
provide appropriate LBA#, BAA#, and CLK signals. For 32-word burst mode read sequence, the device out-
successful burst mode reads, the following events must puts a logic low on the IND# pin. This indicates to
occur (refer to Figures 3 and 4 for this discussion): the system that the burst mode read sequence is
1. The system asserts LBA# low, indicating to the de- complete.
vice that a valid initial burst address is available on 5. To exit the burst mode, the system must write the
the address bus. LBA# must be kept low until at four-cycle Burst Mode Disable command sequence.
The device will also exit the burst mode if powered
down or if RESET# is asserted. The device will not
exit the burst mode if the reset command is written.
25 ns 25 ns 25 ns 25 ns 25 ns
CLK
LBA#
BAA#
Da Da +1 Da +2
Data
65 ns 18 ns 18 ns
OE#
Figure 3. Burst Mode Read with 40 MHz CLK, 65 ns tIACC, 18 ns tBACC Parameters
40 ns 40 ns 40 ns 40 ns 40 ns
CLK
LBA#
BAA#
Da Da +1 Da +2 Da +3
Data
70 ns 24 ns 24 ns 24 ns
OE#
Figure 4. Burst Mode Read with 25 MHz CLK, 70 ns tIACC, 24 ns tBACC Parameters
The system can determine the status of the erase op- When the Embedded Erase algorithm is complete, the
eration by using DQ7, DQ6, DQ2, or RY/BY#. See device returns to reading array data and addresses are
Write Operation Status for information on these status no longer latched. The system can determine the sta-
bits. When the Embedded Erase algorithm is complete, tus of the erase operation by using DQ7, DQ6, DQ2, or
the device returns to reading array data and addresses RY/BY#. (Refer to Write Operation Status for informa-
are no longer latched. tion on these status bits.)
Figure 6 illustrates the algorithm for the erase opera- Figure 6 illustrates the algorithm for the erase opera-
tion. See the Erase/Program Operations tables in AC tion. Refer to the Erase/Program Operations tables in
Characteristics for parameters, and to Figure 19 for the AC Characteristics section for parameters, and to
timing diagrams. Figure 19 for timing diagrams.
device from entering Burst Mode. To enter Burst Mode read and write timings and command definitions apply.
either the Erase operation must be allowed to complete Note that burst read is not available when the device is
normally, or it can be prematurely terminated by issuing erase-suspended. Only asynchronous reads are al-
a Hardware Reset. lowed. Reading at any address within erase-sus-
pended sectors produces status data on DQ7DQ0.
Burst Mode
The system can use DQ7, or DQ6 and DQ2 together,
While in Burst Mode the Erase Suspend command is to determine if a sector is actively erasing or is erase-
ignored and the device continues to operate normally in suspended. See Write Operation Status for informa-
Burst Mode. If Erase Suspend operation is required, tion on these status bits.
then Burst Mode must be terminated and Asynchro-
nous Mode initiated. After an erase-suspended program operation is com-
plete, the system can once again read array data within
General non-suspended sectors. The system can determine
This command is valid only during the sector erase op- the status of the program operation using the DQ7 or
eration, including the 50 s time-out period during the DQ6 status bits, just as in the standard program oper-
sector erase command sequence. The Erase Suspend ation. See Write Operation Status for more informa-
command is ignored if written during the chip erase op- tion.
eration or Embedded Program algorithm. Writing the The system may also write the autoselect command
Erase Suspend command during the Sector Erase sequence when the device is in the Erase Suspend
time-out immediately terminates the time-out period mode. The device allows reading autoselect codes
and suspends the erase operation. Addresses are even at addresses within erasing sectors, since the
dont-cares when writing the Erase Suspend com- codes are not stored in the memory array. When the
mand. device exits the autoselect mode, the device reverts to
When the Erase Suspend command is written during a the Erase Suspend mode, and is ready for another
sector erase operation, the device requires a maximum valid operation. See Autoselect Command Sequence
of 20 s to suspend the erase operation. However, when for more information.
the Erase Suspend command is written during the sec- The system must write the Erase Resume command
tor erase time-out, the device immediately terminates (address bits are dont care) to exit the erase suspend
the time-out period and suspends the erase operation. mode and continue the sector erase operation. Further
After the erase operation has been suspended, the writes of the Resume command are ignored. Another
system can read array data from or program data to Erase Suspend command can be written after the de-
any sector not selected for erasure. (The device erase vice has resumed erasing.
suspends all sectors selected for erasure.) Normal
Command Definitions
Table 4. Am29BL802C Command Definitions
Bus Cycles (Notes 25)
Cycles
Command
Sequence First Second Third Fourth Fifth Sixth
(Note 1) Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data
Read (Note 6) 1 RA RD
Reset (Note 7) 1 XXX F0
Manufacturer ID 4 555 AA 2AA 55 555 90 X00 01
Device ID, Bottom Boot Block 4 555 AA 2AA 55 555 90 X01 2281
Autoselect
(Note 8)
(SA) 0000
Sector Protect Verify (Note 9) 4 555 AA 2AA 55 555 90
X02 0001
0000
Burst Mode Status (Note 10) 4 555 AA 2AA 55 555 90 X03
0001
Program 4 555 AA 2AA 55 555 A0 PA PD
Unlock Bypass 3 555 AA 2AA 55 555 20
Unlock Bypass Program (Note 11) 2 XXX A0 PA PD
Unlock Bypass Reset (Note 12) 2 XXX 90 XXX 00
Chip Erase 6 555 AA 2AA 55 555 80 555 AA 2AA 55 555 10
Sector Erase 6 555 AA 2AA 55 555 80 555 AA 2AA 55 SA 30
Erase Suspend (Note 13) 1 XXX B0
Erase Resume (Note 14) 1 XXX 30
Burst Mode
Burst Mode Enable 4 555 AA 2AA 55 555 C0 XXX 01
Burst Mode Disable 4 555 AA 2AA 55 555 C0 XXX 00
Legend:
X = Dont care PD = Data to be programmed at location PA. Data latches on the
RA = Address of the memory location to be read. rising edge of WE# or CE# pulse, whichever happens first.
RD = Data read from location RA during read operation. SA = Address of the sector to be verified (in autoselect mode) or
erased. Address bits A18A12 uniquely select any sector.
PA = Address of the memory location to be programmed.
Addresses latch on the falling edge of the WE# or CE# pulse,
whichever happens later.
Notes:
1. See Table 1 for description of bus operations. 9. The data is 00h for an unprotected sector and 01h for a
2. All values are in hexadecimal. protected sector. See Autoselect Command Sequence for
more information.
3. Except for the read cycle and the fourth cycle of the
autoselect command sequence, all bus cycles are write 10. The data is 00h if the device is in asynchronous mode and
cycles. 01h if in synchronous (burst) mode.
4. Data bits DQ15DQ8 are dont cares for unlock and 11. The Unlock Bypass command is required prior to the Unlock
command cycles. Bypass Program command.
5. Address bits A18A11 are dont cares for unlock and 12. The Unlock Bypass Reset command is required to return to
command cycles, unless SA or PA required. reading array data when the device is in the unlock bypass
mode.
6. No unlock or command cycles required when reading array
data. 13. The system may read and program in non-erasing sectors, or
enter the autoselect mode, when in the Erase Suspend
7. The Reset command is required to return to reading array
mode. The Erase Suspend command is valid only during a
data when device is in the autoselect mode, or if DQ5 goes
sector erase operation.
high (while the device is providing status data).
14. The Erase Resume command is valid only during the Erase
8. The fourth cycle of the autoselect command sequence is a
Suspend mode.
read cycle.
RY/BY#: Ready/Busy# Table 5 shows the outputs for Toggle Bit I on DQ6. Fig-
ure 8 shows the toggle bit algorithm in flowchart form,
The RY/BY# is a dedicated, open-drain output pin that
and the section Reading Toggle Bits DQ6/DQ2 ex-
indicates whether an Embedded Algorithm is in
plains the algorithm. Figure 21 in the AC Characteris-
progress or complete. The RY/BY# status is valid after
tics section shows the toggle bit timing diagrams.
the rising edge of the final WE# pulse in the command
Figure 22 shows the differences between DQ2 and
sequence. Since RY/BY# is an open-drain output, sev-
DQ6 in graphical form. See also the subsection on
eral RY/BY# pins can be tied together in parallel with a
DQ2: Toggle Bit II.
pull-up resistor to VCC.
If the output is low (Busy), the device is actively erasing DQ2: Toggle Bit II
or programming. (This includes programming in the The Toggle Bit II on DQ2, when used with DQ6, indi-
Erase Suspend mode.) If the output is high (Ready), cates whether a particular sector is actively erasing
the device is ready to read array data (including during (that is, the Embedded Erase algorithm is in progress),
the Erase Suspend mode), or is in the standby mode. or whether that sector is erase-suspended. Toggle Bit
Table 5 shows the outputs for RY/BY#. Figures 15, 17, II is valid after the rising edge of the final WE# pulse in
18 and 19 shows RY/BY# for read, reset, program, and the command sequence.
erase operations, respectively. DQ2 toggles when the system reads at addresses
within those sectors that have been selected for era-
DQ6: Toggle Bit I sure. (The system may use either OE# or CE# to con-
Toggle Bit I on DQ6 indicates whether an Embedded trol the read cycles.) But DQ2 cannot distinguish
Program or Erase algorithm is in progress or complete, whether the sector is actively erasing or is erase-sus-
or whether the device has entered the Erase Suspend pended. DQ6, by comparison, indicates whether the
mode. Toggle Bit I may be read at any address, and is device is actively erasing, or is in Erase Suspend, but
valid after the rising edge of the final WE# pulse in the cannot distinguish which sectors are selected for era-
command sequence (prior to the program or erase op- sure. Thus, both status bits are required for sector and
eration), and during the sector erase time-out. mode information. Refer to Table 5 to compare outputs
for DQ2 and DQ6.
During an Embedded Program or Erase algorithm op-
eration, successive read cycles to any address cause Figure 8 shows the toggle bit algorithm in flowchart
DQ6 to toggle. (The system may use either OE# or form, and the section Reading Toggle Bits DQ6/DQ2
CE# to control the read cycles.) When the operation is explains the algorithm. See also the DQ6: Toggle Bit I
complete, DQ6 stops toggling. subsection. Figure 21 shows the toggle bit timing dia-
gram. Figure 22 shows the differences between DQ2
After an erase command sequence is written, if all sec-
and DQ6 in graphical form.
tors selected for erasing are protected, DQ6 toggles for
approximately 100 s, then returns to reading array
Reading Toggle Bits DQ6/DQ2
data. If not all selected sectors are protected, the Em-
bedded Erase algorithm erases the unprotected sec- Refer to Figure 8 for the following discussion. When-
tors, and ignores the selected sectors that are protected. ever the system initially begins reading toggle bit sta-
tus, it must read DQ7DQ0 at least twice in a row to
The system can use DQ6 and DQ2 together to deter- determine whether a toggle bit is toggling. Typically,
mine whether a sector is actively erasing or is erase- the system would note and store the value of the tog-
suspended. When the device is actively erasing (that is, gle bit after the first read. After the second read, the
the Embedded Erase algorithm is in progress), DQ6 system would compare the new value of the toggle bit
toggles. When the device enters the Erase Suspend with the first. If the toggle bit is not toggling, the device
mode, DQ6 stops toggling. However, the system must has completed the program or erase operation. The
also use DQ2 to determine which sectors are erasing system can read array data on DQ7DQ0 on the fol-
or erase-suspended. Alternatively, the system can use lowing read cycle.
DQ7 (see the subsection on DQ7: Data# Polling).
However, if after the initial two read cycles, the system
If a program address falls within a protected sector, determines that the toggle bit is still toggling, the sys-
DQ6 toggles for approximately 1 s after the program tem also should note whether the value of DQ5 is high
command sequence is written, then returns to reading (see the section on DQ5). If it is, the system should
array data. then determine again whether the toggle bit is toggling,
DQ6 also toggles during the erase-suspend-program since the toggle bit may have stopped toggling just as
mode, and stops toggling once the Embedded Pro- DQ5 went high. If the toggle bit is no longer toggling,
gram algorithm is complete. the device has successfully completed the program or
erase operation. If it is still toggling, the device did not
complete the operation successfully, and the system
OPERATING RANGES
Industrial (I) Devices
Ambient Temperature (TA) . . . . . . . . . 40C to +85C
Extended (E) Devices
Ambient Temperature (TA) . . . . . . . . 40C to +125C
VCC Supply Voltages
VCC for regulated voltage range. . . . . . . 3.0 V to 3.6 V
Operating ranges define those limits between which the func-
tionality of the device is guaranteed.
DC CHARACTERISTICS
CMOS Compatible
Parameter Description Test Conditions Min Typ Max Unit
VIN = VSS to 5.5 V,
ILI Input Load Current 1.0 A
VCC = VCC max
ILIT A9 Input Load Current VCC = VCC max; A9 = 12.5 V 35 A
25 MHz 15 30 mA
VCC Burst Mode Read Current CE# = VIL,
ICC6 33 MHz 20 35 mA
(Notes 2, 5) OE# = VIH
40 MHz 25 40 mA
Notes:
1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH. Typical VCC is 3.0 V.
2. Maximum ICC specifications are tested with VCC = VCCmax.
3. ICC active while Embedded Erase or Embedded Program is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns. Typical sleep mode
current is 3 A.
5. 32-word average.
6. Not 100% tested.
DC CHARACTERISTICS (Continued)
Zero Power Flash
25
Supply Current in mA
20
15
10
0
0 500 1000 1500 2000 2500 3000 3500 4000
Time in ns
10
3.6 V
8
Supply Current in mA
2.7 V
0
1 2 3 4 5
Frequency in MHz
Note: T = 25 C
Figure 12. Typical ICC1 vs. Frequency
TEST CONDITIONS
Table 6. Test Specifications
3.3 V
65R, 90R,
Test Condition 70R 120R Unit
2.7 k
Device Output Load 1 TTL gate
Under
Test Output Load Capacitance, CL
30 100 pF
(including jig capacitance)
CL 6.2 k
Input Rise and Fall Times 5 ns
Steady
Changing from H to L
Changing from L to H
3.0 V
Input 1.5 V Measurement Level 1.5 V Output
0.0 V
AC CHARACTERISTICS
Read Operations
Speed Options and
Parameter Temperature Ranges
Read Min 0 ns
Output Enable
tOEH Toggle and
Hold Time (Note 1) Min 10 ns
Data# Polling
Output Hold Time From Addresses, CE# or
tAXQX tOH Min 0 ns
OE#, Whichever Occurs First (Note 1)
Notes:
1. Not 100% tested.
2. See Figure 13 and Table 6 for test specifications
AC CHARACTERISTICS
Burst Mode Read
Parameter Speed Options and Temperature Ranges
Note: Initial valid data will be output after second clock rising edge of LBA# assertion.
AC CHARACTERISTICS
tRC
tDF
tOE
OE#
tOEH
WE# tCE
tOH
HIGH Z HIGH Z
Outputs Output Valid
RESET#
RY/BY#
0V
tCES tCEZ
CE#
CLK
tLBAS
LBA#
tLBAH tBAAS
BAA# tACS
tBAAH
A0: A18 Aa
tBDH tBACC
tACH
DQ0: DQ15
tIACC Da Da + 1 Da + 2 Da + 3 Da + 31
tOE tOEZ
OE#*
IND#
AC CHARACTERISTICS
Hardware Reset (RESET#)
Parameter
RY/BY#
CE#, OE#
tRH
RESET#
tRP
tReady
tReady
RY/BY#
tRB
CE#, OE#
RESET#
tRP
AC CHARACTERISTICS
Erase/Program Operations
Parameter Speed Options
Notes:
1. Not 100% tested.
2. See the Erase and Programming Performance section for more information.
AC CHARACTERISTICS
Program Command Sequence (last two cycles) Read Status Data (last two cycles)
tWC tAS
Addresses 555h PA PA PA
tAH
CE#
tCH
OE#
tWP tWHWH1
WE#
tWPH
tCS
tDS
tDH
tBUSY tRB
RY/BY#
VCC
tVCS
Note: PA = program address, PD = program data, DOUT is the true data at the program address.
AC CHARACTERISTICS
Erase Command Sequence (last two cycles) Read Status Data
tWC tAS
Addresses 2AAh SA VA VA
555h for chip erase
tAH
CE#
OE# tCH
tWP
WE#
tWPH tWHWH2
tCS
tDS
tDH
In
Data 55h 30h Progress Complete
tBUSY tRB
RY/BY#
tVCS
VCC
Note: SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see Write Operation Status).
AC CHARACTERISTICS
tRC
Addresses VA VA VA
tACC
tCE
CE#
tCH
tOE
OE#
tOEH tDF
WE#
tOH
High Z
DQ7 Complement Complement True Valid Data
High Z
DQ0DQ6 Status Data Status Data True Valid Data
tBUSY
RY/BY#
Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data
read cycle.
Figure 20. Data# Polling Timings (During Embedded Algorithms)
tRC
Addresses VA VA VA VA
tACC
tCE
CE#
tCH
tOE
OE#
tOEH tDF
WE#
tOH
High Z
DQ6/DQ2 Valid Status Valid Status Valid Status Valid Data
(first read) (second read) (stops toggling)
tBUSY
RY/BY#
Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read
cycle, and array data read cycle.
AC CHARACTERISTICS
Enter
Embedded Erase Enter Erase Erase
Erasing Suspend Suspend Program Resume
WE# Erase Erase Suspend Erase Erase Suspend Erase Erase
Read Suspend Read Complete
Program
DQ6
DQ2
Note: The system may use CE# or OE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within an
erase-suspended sector.
Figure 22. DQ2 vs. DQ6 for Erase and Erase Suspend Operations
tVIDR VID Rise and Fall Time (See Note) Min 500 ns
12 V
RESET#
0 or 3 V
tVIDR tVIDR
Program or Erase Command Sequence
CE#
WE#
tRSP
RY/BY#
AC CHARACTERISTICS
VID
VIH
RESET#
SA, A6,
Valid* Valid* Valid*
A1, A0
Sector Protect/Unprotect Verify
CE#
WE#
OE#
AC CHARACTERISTICS
Alternate CE# Controlled Erase/Program Operations
Parameter Speed Options
Notes:
1. Not 100% tested.
2. See the Erase and Programming Performance section for more information.
AC CHARACTERISTICS
Addresses PA
tWC tAS
tAH
tWH
WE#
tGHEL
OE#
tCP tWHWH1 or 2
CE#
tWS tCPH
tBUSY
tDS
tDH
DQ7# DOUT
Data
tRH A0 for program PD for program
55 for erase 30 for sector erase
10 for chip erase
RESET#
RY/BY#
Notes:
1. PA = program address, PD = program data, DQ7# = complement of the data written to the device, DOUT = data written to the
device.
2. Figure indicates the last two bus cycles of the command sequence.
Figure 25. Alternate CE# Controlled Write Operation Timings
Notes:
1. Typical program and erase times assume the following conditions: 25C, 3.0 V VCC, 100,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90C, VCC = 3.0 V, 100,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
Table 4 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1 million cycles.
LATCHUP CHARACTERISTICS
Description Min Max
Input voltage with respect to VSS on all pins except I/O pins
1.0 V 12.5 V
(including A9, OE#, and RESET#)
Input voltage with respect to VSS on all I/O pins 1.0 V VCC + 1.0 V
Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time.
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25C, f = 1.0 MHz.
DATA RETENTION
Parameter Test Conditions Min Unit
150C 10 Years
Minimum Pattern Data Retention Time
125C 20 Years
* For reference only. BSC is an ANSI standard for Basic Space Centering.
PHYSICAL DIMENSIONS*
SSO05656-Pin Shrink Small Outline Package
REVISION SUMMARY
Revision A (June 1, 1999) Burst Mode Read with 40 MHz CLK figure
Initial release. Changed tBACC for the 65R speed option in the indus-
trial temperature range from 19 to 18 ns.
Revision A+1 (June 25, 1999) Read Operations table
General Description Changed tOE and tDF for the 65R speed option in the
Corrected the device density in the first paragraph. industrial temperature range from 19 to 18 ns.
Colophon
The products described in this document are designed, developed and manufactured as contemplated for general use, including without limita-
tion, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as con-
templated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the
public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility,
aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for
any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). Please note that Spansion Inc. will not be liable
to you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor
devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design
measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating
conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign
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thorization by the respective government entity will be required for export of those products.
Trademarks
Copyright 19992005 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered trade-
marks of Advanced Micro Devices, Inc. ExpressFlash is a trademark of Advanced Micro Devices, Inc. Product names used in this publication are
for identification purposes only and may be trademarks of their respective companies.
Copyright 2006 Spansion Inc. All Rights Reserved. Spansion, the Spansion logo, MirrorBit, ORNAND, HD-SIM, and combinations thereof are
trademarks of Spansion Inc. Other names are for informational purposes only and may be trademarks of their respective owners.