EE311

Introduction to Semiconductor
Devices

L23 : PN Junction (part-6)

(p )
Current Flow-4

B. Mazhari
B M h i
Professor, Dept. of EE
p
IIT Kanpur

130
G-Number
B. Mazhari, IITK
Reverse Current DP ni2 DN ni2 qV
J q( ) {exp( ) 1}
LP N D LN N A kT
DP ni2 DN ni2
q( ) under reverse bias
LP N D LN N A

n2
qV n 2 ni2 qV ni2
p( xn ) i
{exp( ) 1} i n( x p ) {exp( ) 1}
ND kT ND NA kT NA
P F N

VR
-xP xN

-xP xN
n(x)
( ) p(x)
p( )
 DP ni2 DN ni2
J q( )
LP N D LN N A

P F N

VR
-xP xN

p(x)
n(x)
( )

-xP xN

Reverse current is due to thermal generation and diffusion

 n p ni2
R G
N { p ni exp( Et kT )} P {n ni exp( Et kT )}
pn ni2 1
Et 0; N P R G
n p 2ni
P F N

LP
VR
-xP xN

ni2 1 ni2 1
R G G
ND ND

DP n 2
DN n 2 ni2 1 DP ni2
J q( i
) i J PN q LP q
LP N D LN N A ND LP N D
 P F N

LN LP
VR
-xP xN

ni2 1 ni2 1
G G
NA ND

DN ni2 DP ni2
J PN q G LN q J PN q G LP q
LN N D LP N D
DP ni2 DN ni2
J q( )
LP N D LN N A

DP ni2 DN ni2
J S q( ) -J scr
LP N D LN N A
 P F N

VR
LN LP
-xP xN

DP ni2 DN ni2
J S q( ) -J scr
LP N D LN N A
pn ni2 1 ni
Within depletion region : R
n p 2ni 2
ni
J SCR q W
2
DP ni2 DN ni2 ni
J S q( ) q W
LP N D LN N A 2
 16 -3 16 -3
Example NA=5 x 10 cm ND=5 x 10 cm

Sili
Silicon di
diode
d + N N
+
P P

x(m)
0 1 50 99 100

2 2
DP n DN n ni
J S q( ) q W
i i
LP N D LN N A 2

11 2 7 2
1.75 10 Acm 1.9 10 Acm
Eg
g = 0.7 eV
4 2 4 2
1.8 10 Acm 6 10 Acm
 m)
2
nsity (A/cm
1
10
0
10
-1
10
nt Den

-2
10 11 qV
J 3.1 10 exp( )
1.02 kT
Curren

-3
10
-4
10
0.4 0.6 0.8
Vanode (Volts)
 P F N

VR
LN LP
-xP xN

DP ni2 DN ni2 ni
J S q( ) q W
LP N D LN N A 2

J qG ( LN LP ) qG W
Optical Generation: GOP PN junction as a photodetector

J R J dark qGop ( LN LP ) qGop W

Need to keep dark current low for high sensitivity
 P F N

VR
LN LP
-xP xN

J R J dark qG
Gop ( LN LP ) qG
Gop W
DP ni2 DN ni2 ni
J dark q( ) q W LN DN N
LP N D LN N A 2

P i N

VR
PN Junction under light qV
J J S {exp( ) 1}
kT
p
Assumption : Minority carrier current J PN qDP
i primarily
is i il diff
diffusive
i x
P N

2 pN pN
DP GOP
x P
VF
2

n(x) p(x)

ni2 qV
-xP xN
pN ( x ) { (exp( ) 1) GOP P }
ND kT
Assumption : very thick N and P x xN
regions exp( )
LP
x xN
pN ( x ) pN ( xN ) exp(( )
LP DP ni2 qV
J P ( xN ) q {exp( ) 1}
DP ni2 qV LP N D kT
J P ( xN ) q {exp( ) 1}
LP N D kT
qGOP LP
 DP ni2 qV
J P ( xN ) q {exp( ) 1}
LP N D kT
qGOP LP

n(x) p(x)

-xP xN

DP ni2 DN ni2 qV
J q( ) {exp( ) 1}
LP N D LN N A kT
qGOP ( LP LN )

qV
I I S {exp( ) 1} I L
kT
 qV
I I S {exp( ) 1} I L
kT

I
LED
Rectifier
V

Photodetector Solar Cell

 qV
I I S {exp( ) 1} I L
kT

I I
V

V
IL D RL

Solar Cell
Maximum Load Power

I
I IL ID
V

P I V
IL D RL

P V

VM

B. Mazhari, IITK
Pmax I m Vm 144
G-Number
Solar cell parameters
I
I
V
V
VOC
IL D RL ISC

VOC : Open circuit voltage

ISC : Short circuit current
I m Vm
Pmax I m Vm I SC VOC
I SC VOC
Fill factor
f t FF < 1
Pmax FF I SC VOC
145
G-Number
B. Mazhari, IITK