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Yifan Lu
EE 330
Section F
Lab 6 report
10/1/2017

Introduction
In this lab, we will be analyzing the relationship between the square law

model of the MOS transistor and the BSIM model. We will be extracting different

parameter from the circuit equation by setting up different inputs.

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Part 3: Square-Law parameter extraction

Since VGS VT, then the circuit is running under saturation condition as following:

W
ID = Cox (V VT )2 (1 + VDS )
2L GS

VT = VT0 + ( VBS )

For W=12 and L=3.

To find the VT, I kept the VDS =4V and used the two values of VGS (VGS1=2V or VGS2=2.5V) to get the
two current values

Measured data:

When VGS=2V ID=265.2;

When VGS=2.5V ID=479.6

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W
ID1 (VGS1 VT )2 Cox 2L (1 + VDS1 )
=
ID2 (VGS2 VT )2 C W (1 + V )
ox 2L DS2

Since VDS1= VDS2=4V

ID1 (VGS1 VT )2
=
ID2 (VGS2 VT )2

265.2 (2 VT )2
=
479.6 (2.5 VT )2

VT = 0.55V

a) In order to find out the , I kept the VGS =2V and used the two values of VGS (VGS1=4V or VGS2=4.5V)

to obtain the two current values.

Measured data:

When VDS=4V ID=265.2;

When VDS=4.5V ID=266.1

W
ID1 (VGS1 VT )2 Cox 2L (1 + VDS1 )
=
ID2 (VGS2 VT )2 C W (1 + V )
ox 2L DS2

Since VGS1= VGS2=2V

ID1 (1 + VDS1 )
=
ID2 (1 + VDS2 )

265.2 1 + 4
=
266.1 1 + 4.5

= 6.97 103
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b) For gaining Cox, I plugged the parameter obtained above as shown below.

W=12 and L=3;

VGS=2V; VDS=4V; = 265.2;

= 6.97 103; VT = 0.55V;

into the current equation as shown below:

W
ID = Cox (V VT )2 (1 + VDS )
2L GS

12
265.2 = Cox (2 0.55)2 (1 + 6.97 103 4)
23

Cox = 62.3uA/V 2

c) Finally, for getting , I changed the value of VBS from 0V to -2V and gained new value of VT .

Measured data:

When VGS=2V ID=120.9;

When VGS=2.5V ID=290.9

Then I did the same calculation as what I did in part a),

New VT is 1.09V, since =0.6

VT = VT0 + ( VBS )

1.09 = 0.55 (0.6 (2) 0.6)

= 0.643
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Repeating the process again for Dimension: W=1.5, L=0.6

W=1.5, L=0.6

VGS =1.2V and VDS = 0.8V

I obtained the following parameter:

VT = 0.78V; = 0.184;

Cox = 50.22uA/V 2 ; = 0.462.

Part 4: BSIM Model Verification

I used BSIM model to sweep Vds from 0v to 5v in the W=12um and L=3um device.
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As we can see from the figure, the Id from the plot(the second lowest one, which has the
corresponding Vgs value) is around 260uA and is very close to the calculation from the square
law test value265.2uA.
265.2260
With a difference value of The difference in % being: 265.2
= 0.19%

Repeating the same process for W=50um and L=1um:

Again, from calculation:

W
ID = Cox (V VT )2 (1 + VDS )
2L GS
50
= 62 (4 0.55)2 (1 + 5 6.97 103 )
21
=19mA

1913
Error = 19
= 31.3%

Relatively higher than the precious one, the larger percentage of error is caused by the smaller value of Id
and error level increased relatively.

Analysis
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Comparing values of BSIM model with the square-law model, I think error percentage

will increase when the size (W/L) of MOSFET increases. Thus, using a larger sized (W/L value

bigger) would significantly reduce the Id current verification error.

Part 5:
For this part, I will be using the small signal output conductance to find relationship

between L and with the given equation: 0 = * DQ.

L() I() G() ()

3.5 1213.2 5.32 0.004324

4.5 1007.3 3.45 0.003967

5.5 839.2 3.2 0.003856

6.5 722.2 2.5 0.003701

7.5 622.1 2.2 0.003644

8.5 565.3 1.97 0.003507

Table above shows numerical values of L and

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vs L
0.0044

0.0042

0.004

0.0038

0.0036

0.0034

0.0032

0.003
3.5 4.5 5.5 6.5 7.5 8.5

Relationship between L and

Then, find the relationship between L and :

Vds I g

2.3 310.1 2.221 0.008033

2.4 310.4 2.217 0.007653

2.7 310.7 2.192 0.007432

2.9 310.9 2.156 0.007300

3 311.3 2.123 0.006978

3.1 312.4 2.155 0.006785

3.3 312.5 2.099 0.006553

3.5 312.8 2.067 0.006342

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Relationship between Vds and L:

Vds vs L
0.0085

0.008

0.0075

vds vs L
0.007

0.0065

0.006
2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

Analysis:
From the graphs and tables above, the channel length modulation constant of the MOS

transistor is inversely proportional to both Vds and length L.

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Conclusion
In this weeks lab, I utilized BSIM model to verify with the calculations from square-law

model. There does exist some errors between the calculations and the BSIM models and it seems

like the square-law model has a relatively bigger error than BSIM model. I think part of the

reason is due to the fact that BSIM model has 95 process parameters while the square-law model

only has 6 process parameters. I would use BSIM model in future which would give me a more

precise measurement.