To be published in Journal of the Optical Society of America B:

Title: Substrate effects on the optical properties of metal gratings

Authors: Munehiro Nishida,Yutaka Kadoya,Ryo Kikkawa
Accepted: 26 October 17
Posted 27 October 17
Doc. ID: 303279

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Substrate effects on the optical properties of metal
gratings
RYO KIKKAWA,1 MUNEHIRO NISHIDA,1 YUTAKA KADOYA 1,*
1
Graduate Scholl of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima 7398530, Japan
*Corresponding author: kd@hiroshima-u.ac.jp

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Received XX Month XXXX; revised XX Month, XXXX; accepted XX Month XXXX; posted XX Month XXXX (Doc. ID XXXXX); published XX Month XXXX

The transmission and near field enhancement spectra of thin metal gratings on a semiconductor designed for
telecom band, ~1500 nm, were investigated theoretically. It was found that around the wavelength R where a
diffraction order changes its character between radiative and evanescent, the spectral peaks are pinned at R, in
marked contrast to the gratings in air where the peak wavelength is always longer than R. We show that the
difference is related to the absence/presence of the bound mode (BM) of the system, which corresponds to the
Fabry-Perot (FP) resonance of the slit mode. In the thin gratings on a semiconductor, the BM disappears due to the
large dielectric asymmetry above and below the grating, which results in different reflection phases for the slit
mode at the grating-dielectric interfaces. It is also shown that the plasmonic band gap is large in gratings on
semiconductors, enhancing the disappearance of the BM.
OCIS codes: (050.2770) Gratings; (050.1220) Apertures; (050.2230) Fabry-Perot; (240.6680) Surface plasmons; (260.3910) Metal optics;
(260.3160) Interference.
http://dx.doi.org/

Fabry-Perot (FP) resonances, i.e. the minima in the denominator,

1. INTRODUCTION neglecting the variation of |13|. The effect of SP at each interface is
involved in 1 3, 1 and 3. Here, it is important to distinguish the SP at
Metal gratings are a very fundamental element in optics. Nevertheless,
the metal-dielectric interfaces with a finite slit width from that at the
a sufficiently complete explanation of their optical response is not easy.
flat metal-dielectric interface (SPF)[8-9]. It is known[3-5,15] that 1,3,
In addition to the onset (or passing-off) of a diffraction order, the
and hence T0 becomes nearly zero around
surface plasmon (SP)[1-15], Fabry-Perot (FP) (or cavity plasmon)[1-
7,9-15], and the Fano resonances[9-11,14-17] and their interplay SPF = p{ m1,3 /( m + 1,3 )}1/ 2 , where p is the period of the grating
make the relevant spectra much complicated with anomalous peaks and m and 1,3 are the permittivity of the metal and of each dielectric
and dips near the wavelength given by the grating formula [18], medium, respectively. On the other hand, the SP resonance SP
R = np( sin 1) / j , where p, n, and are the period of the grating, depends also on the slit width[9]. In particular, for wide slits, the SP
the refractive index of the medium and the angle of the light incidence, resonance disappears (sitting in the region < R with large damping)[9].
respectively, and j = 1, 2, 3, . Historically, the anomalous Recently, Yoon et al. have successfully explained the roles of the SP in
structures have been called Woods or Wood-Rayleigh anomalies[19] the transmission spectra of metal gratings by focusing on the case of R
and have been discussed recently also in terms of extraordinary optical < SP < SPF[15]. In particular, they showed that s ~ 0 around SPF is
transmission[20]. In this article we call the wavelength R Rayleigh understood as the Fano resonance caused by the interference between
wavelength for simplicity. the wave transmitted from the slit to the free space directly and that by
For the grating with relatively narrow slit, which can be treated as a way of the SP at the interface.
single mode waveguide, the 0th order transmission can be written by a Most of the previous reports including [15], however, have dealt
FP formula[3-5, 8-11,15], with a case where the grating is placed in air, i.e. the dielectric constant
below and above the grating is the same. From an application point of
2 view, it is important to consider the grating, or metal apertures in
1 3
T0 = , (1) general, on a dielectric substrate. For example, metal gratings on a
1 1 3e 2iqh semiconductor have been shown to improve the performance of
where 1 and 3 (1 and 3) are the reflection (transmission) optoelectronic devices such as photo-diodes[21-22] and
coefficients for the slit mode at the incident- and the exit-side interfaces, photoconductive switches for terahertz emitters/detectors[23-28].
respectively, as illustrated in Fig. 1, q is the propagation constant of the Metal gratings on a substrate is also an important structure for the
slit mode, and h is the grating thickness. Hence, T0 takes its peaks at the perfect (or very high) optical absorption (POA)[29-30]. Hence, for the
deesign of various devices,
d ortant to clarify how the presence of
it is impo
the substrate affeccts the optical ressponse of the graating. Though som me
reports have comm mented on the efffect of the substtrate[1,7,10-13,16],
noo clear and concre ete discussions were
w given, excep pt for the reports on
POOA investigating the role of the modes in the su ubstrate[29-30]. In
adddition, for the phhotoconductive switches,
s it is impportant to enhan nce
the field near the grating in the substrate[25],
s which
w has not beeen
invvestigated well.
In this work, we
w investigated the t transmission n T0 and near fieeld
ennhancement E arround R in the metal m gratings on n a semiconducttor
suubstrate. We con nsidered rather thint gratings wh hich are preferrred
beecause of easy fab brication. By usinng a coupled mode method (CMM M),
wee can derive app proximate analyttical expression for, f for example, 1
annd 3, giving clearr physical picture
es. It will be show wn that, for teleco
om Fig. 1. SSchematic drawiing of the structture investigated d in this work
annd longer wavelen ngth, the peaks inn the T0 and E sp pectra are pinned d at (left) an n for s and s iin Eq. (1) (right).
nd the illustration
R in the thin gratiings and the peaak vanishes with decreasing grating
thickness. In orderr to elucidate the physics behind the t phenomena, we w

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annalyzed the boun nd mode (BM) off the system, which corresponds to For tthe calculation off T0, E and otherr related quantitiies, we used a
the FP resonance in i narrow slit casses and gives thee peaks in T0 and d E. CMM[32]. In this method, the fields abovve (region I) and b below (region
W
With the decrease of the grating th hickness, the BM disappears
d causing III) the grating are expaanded into the pllane and evanesccent waves of
the pinning and th he vanishing of th he peaks. The dissappearance of the t the diiffraction orderr n having the in-plane wavenumber
BMM is a feature of the
t grating on a semiconductor
s su
ubstrate, where the
t k x = k 0 + 2 n / p , wh
here k0 is the in n-plane wavenu umber of the
dieelectric ambientt sandwiching th he grating are highly
h asymmetrric, incidentt wave. For the fiields and the (commplex) propagatiion constant q
coontrary to the grating in air wh here the BM usu ually present. The
T in the sllit, we solved nuumerically the traanscendental equuation derived
essential differen nce between th he symmetric and asymmettric from th he boundary co onditions for thhe transverse-m magnetic (TM)
strructures comes into
i the BM in th he total reflection phase arg(1 3). modes iin the metal-insu ulator-metal waveeguide, taking intto account the
W
We also show tha at the plasmonicc band gap is larrge at the gratin ng- field peenetration into th he metal of m. FFor the Au gratin ng with ws
seemiconductor inte erface enhancing g the disappearan nce of the BM. 43.3 nm m considered in tthis work, the sllit is safely approoximated by a
single mmode waveguide. This mode is a propagating onee having the x-
2.. Method and
d Results compon nent of the eleectric field E x ,slit and y-compo onent of the
magnettic field H y ,slit syymmetric in x witth respect to the sslit center and
A. Analyzed Struccture and Calcula ation Methods correspponds to the traansverse electrom magnetic (TEM) mode in the
Thhe structure studied in this work is illustrated in Fig. 1. The Au gratiing perfect electric conducto or (PEC) approxiimation ( m ). The fields
wiith a period p = 433.3 nm, thick kness h, and slit width ws sits on na are connnected by the bo oundary conditioons between the regions using
su
ubstrate with refrractive index n3 = 3.6. The period corresponds to the t
the surfface impedance Z S = m 1 / 2 Z 0 at the metal surfface[4], where
Raayleigh waveleng gth in the substtrate at R = 156 60 nm for norm mal
inccidence. For commparison, we also show the resultss for n3 = 1.0 with hp Z0 is thee vacuum imped dance. The ampliitude A and B of the slit mode
= 1560 nm. The regions above the t grating and inside the slit are a propagaating in the +z an nd z directions,, respectively, aree obtained by
assumed to be air. Hence for n3 = 3.63 the dielectric ambient
a above an nd the equuations,
beelow the grating is highly asymm metric, while it is symmetric
s for n3 = 2
1.00. In the followin
ng, ws is chosen to
t be 43.3 nm (= = 0.1p for n3 = 3.6), GI A + GI+ B = Yk x = k0 (I) Sk x = k0 , (2)
f k+ = k
unnless otherwise stated.
s The permmittivity m of Au u is modeled by ya x 0 (I)

Drrude-Lorentz fit tot the Johnson-C Christy data[31]. At 1560 nm, m is + Aeiqh + G B iqh = 0,
GIIII III Be (3)
bout 125+ i11.5.. In this paper, we
ab e discuss the 0th order transmission
(T
T0) and the near field
f enhancemen nt (E) for a p-pollarized plane waave where
off wavelength (wwavenumber k) incident from thee air side. Althou ugh
the near field enha ancement could be characterized d by various way ys, Yk x ((I, III)
III) =
2
wee chose, in this work,
w E defined as the ratio of thee spatially averagged

G((I, S k (1 Z S Yeff ) Yslit , (4)
kx f k+ ((I, III) x
sq
quared electric fieeld amplitude |F F()|2 on a planee 10 nm below the t x

intterface with and d without the grating.

g This deefinition is directtly
related to the enha ancement of the photo excitation n in the devices[221- f k (I, III) = 1 ZSYk x (I, III) ,
x
288]. Though the magnitude
m of E ca
alculated in such a way depends on 1,3 k
the distance from the metal (10 nm in the preseent definition) an nd Yk x (I, III) = , (5)
heence has no defin nite meaning, thee spectral featuree and its parametter Z0 k z
deependence are im mportant for the device
d design. k z 2 = 1,3k 2 k x 2 ,
with 1 = n12 and 3 = n32 being the dielecttric constant in reegion I and III,
tively, and
respecti

Sk x = p E *x , k x ( x ) E x ,slit ( x )dx (6)

deenotes the overla
ap integral betw ween the electric fields E x ,slit ( x ) of The E aand T0 spectra o of the grating onn the substrate ((n3 = 3.6) are
the slit mode and d E x , k x ( x ) of the
e in-plane waveenumber kx in the t shown iin Figs. 2(a) and (b), respectivelyy, for various h. T To confirm the
validityy of the CMM ccalculation, the rresults obtained by Rigorous
dieelectric region. Here
H the asterisk means the comp plex conjugate. The
T
Coupled d Wave Analysiss (RCWA) [32] aare also plotted b by the dashed
ad
dmittance of the slit
s mode Yslit and
d the effective ad
dmittance Yeff in the
t lines. Thhe CMM results aare in good agreeement with RCWA A, particularly
mean field approxiimation[32] are given,
g respectivelyy, by
in the pposition of the peaaks in the long (> > 1500 nm) waveelength range,
which iss a main issue in the following disscussions. In the E spectra for
p E *x ,slit ( x ) H y ,slit ( x )dx (7) > R, thee peak redshifts w with the increasee of h for h 300 nm, following
Yslit =
p E x*,slit ( x ) E x ,slit ( x )dx the shifft of the BM wav avelength BM ind dicated by the fiilled triangles.
Qualitattively, such h dep pendence is a general feature of F FP resonance.
and For h 200 nm, howeve ver, the BM disapp pears and the peaak is pinned at
R. Thiss is the main subjject of this articlee and discussed iin detail in the
p E *x , k 0 ( x ) H y ,slit ( x )dx
(8)
next secction. The same b behavior is seen iin the T0 spectra except for h =
Yeff = . 300 nm m, where not a peaak but a dip appeears. In this case, BM is close to
S k0
SPF. Onne can see that T0 is nearly 0 aroun nd SPF for all valu
ues of h. Hence,
Ussing the solution
n A and B, the 0th order tran
nsmittance can be the dip (and T0 ~ 0 for aall h) is ascribed tto the Fano reson nance causing
caalculated as 3 ~ 0 ((see Eq. (1)). Thoough not shown n here, 3 ~ 0 aro ound SPF was

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confirmmed by the CMM calculation. Thee field distributions for several
2
Aeiqh (1 + Z S Yeff ) + Be
B iqh (1 Z S Yeff wavelen ngths (R, SPF, an
nd BMs) are pressented in the App pendix.
e )
T0 = +
S k0 . (9)
f k (IIII)
0

On the other han

nd, the BM of the system is the non-trivial solution
n of
co
oupled Eqs. (2) an
nd (3) without light incidence,
G e iqh G + G + eiqh
G(I) i = 0, (10)
(III) (I) (III)

wiith respect to a complex

c frequenccy fBM with negattive imaginary paart
m [ f BM ]. In th
Im his work, the e solution waas searched for f
m [ f BM ] Re [ f BM
Im M ] < 0.3. The en
nhancement E iss maximized at the t
BMM frequency Re [ f BM ] (wavelength BM = c / Ree [ f BM ] with c the t
sp
peed of light in vacuum), since the system is resonantly r exciteed, Fig. 2. C
Calculated (a) E aand (b) T0 spectraa for n3 = 3.6 andd ws = 43.3 nm
neeglecting the shiftt due to Im [ f BM ] . The reflection
n coefficients for the
t (= 0.1p)p) for several vallues of h. The so olid and dashed lines are the
sliit mode at the slitt-dielectric interfa
aces can be calcullated from results by CMM and RC CWA, respectivelyy. The spectra w were vertically
shifted by a step of 10 in (a) and of 0.5 5 in (b) for visuaal clarity. The
+
G(I) G+ dotted and dash-dotted d lines indicate the position off R and SPF,
1 = A =
, 3 = B = (III) .

(11) respectitively. The filled aand open triangles indicate the p position of BM
B G(I) A G(III)
of m = 1 and m = 2, resp pectively, calculatted using the imaaginary part of
Eq. (13)). Here, the BMs with same m exxist at two waveleengths (m = 2
Ussing them, we can
n rewrite the BM condition (10) ass
for h = 400 and 500 n nm, and m = 1 ffor h = 300 nm)). This occurs
1 1 3e 2iqh = 0, (12) becausee the larger q (shorter ) is ccompensated byy the smaller
arg(13), for the pair o of the wavelengtths one shorter aand the other
whhich is simply thee condition for th
he FP resonance. Hence, as far as the
t longer tthan the singular wavelength (R o or giving arg(3) = 2) as will
BMM exists, the peakk in T0 can be also a BM (with a fin
o said to appear at nite be seen n in Fig. 6. Physically, it correspo onds to the splittting of the FP
deeviation due to Imm [ f BM ] and the
e wavelength dependence of |13|)). resonan nce by the coupliing to the SP mod de (anti-crossing)) via the steep
or Im [ f BM ] < 0 , the propagation
Fo n constant q can have a negatiive variatioon of s [15], as m
mentioned in Secc. 1.
im
maginary part and
d the solutions of Eq. (12) expresseed by

ln ( 1 3 ) 2h Im {q} Heree, we comment on n the pinning of tthe peaks in T0 an nd E at R seen

(13) in Fig. 2 for the case wh here BM disappeears ( h 200 nm m). From the h
+i arg ( 13 ) + 2h Re {q} 2m = 0 depend dence of the BM p position, the disapppearing BM can n be thought to
lie in thee region < R. In
n such cases, the B BM becomes oveerdamped due
arre labeled by an in
nteger m. to the ccoupling to the rradiative 1st ord der diffraction. A As a result, as
We can also ca alculate the boun
nd modes at thee grating-substraate schemaatically illustrated d in Fig. 3, the maiin part of the virttual resonance
intterface (BMI), which
w correspond
ds to the SP resoonance in compllex is shaveed off in < R, leeaving the tail inn > R with a peeak at R. This
freequency domain n, as the non-trrivial solution off Eq. (3) with no model aalso explains thee decrease of the peak height in E and T0 at R
inccidence (A = 0), i.e. with th he decrease of h from 200 nm to 100 nm in Figg. 2, since the
= 0.
GIII (14) virtual rresonance may gget away from R w with decreasing h h.

B. Transmission and enhancemen

nt spectra and BM
B
Figg. 3. Schematic illlustration explaiining the reason
n for the pinning of Fig. 5. T ndence of BM for the case of (a)
The red circles deepict the h depen
the peaks at R whhen the overdamp ped BM sits in thee radiative rangee, n3=3.6 aand (b) n3=1.0 booth with ws =43.33 nm. For compaarison, Log(T0)
< R. is also shown by the ggray scale map. T The dahsed liness indicate the
positionn of SPF.

Next, let us show

w the results for the case of n3 = 1.0 (grating in air)a

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annd p = 1560 nm. Shown in Fig. 4 are the (a) E and a (b) T0 specttra Beforre going to thee discussion on the reason for the different
arround R (1560 nm m) together with h BMs (triangles)) for various h. Heere, behavioor in the BM betw ween the two caases, we commen nt here on the
the same ws (= 43.3 nm) as that fo or Fig. 2 was chossen to keep the slits effect off Fano resonancee on E. As can bee clearly seen in tthe case of h =
mode similar. As in n Fig. 2, the peakk positons in the CMM results (solid 300 nm m in Fig. 2(a), the F
Fano resonance d does not affect th
he E spectra in
lin
nes) are in good agreement with h the RCWA resu ults (dashed linees). the gratting on the subsstrate. This can b be explained as ffollows. In the
On ne can clearly see e that the lowestt order (m = 1) BM
B indicated by the t case off n3 n1 , SPFs aare different beetween the incid dent and exit
fillled triangles bluueshifts with the e decrease of h, qualitatively ass a (substraate) sides. Hencce, around SPFF of the exit sid de, the Fano
feaature of FP reson nance. Following g the shift of the BM, the peaks in nE resonan nce occurs in thee exit side (3 ~ 00) but not in thee incident side
annd T0 blueshift with
w the decrease e of h, though th he Fano resonan nce ( 1 0 ). In such case, th
he slit mode can be excited. On th he other hand,
suuppresses the pea aks when BM ge ets closer to SPF. Here, a significaant as men ntioned before, the Fano reso onance in the ggrating is an
diffference from Fig g. 2 (n3 = 3.6) can be noticed. The lowest order BM B interferrence occurring in the far field between the w waves directly
dooes not disappea ar even for small h. Correspondin ngly, the pinning of transmiitted from the sliit and that througgh the SP[15]. In n other words,
the peaks at R doe es not occur. the exciited slit mode iss associated with h the SP wave att the exit-side
interfacce, which contrib butes to the near field enhancemeent even for 3
~ 0. On the contrary, as seen in Fig. 4(a), E is suppressed aaround SPF in
the gratting in air (n1 = n3). This is because 1 (= 3) becommes also nearly
zero an nd hence the slit m mode is not excitted. Therefore, wwe can say that
the surrvival of the E p peak at SPF of tthe substrate-sid de interface is
anotherr feature of graatings on a sub bstrate, or moree generally of
gratingss in asymmetric aambient.

3. Disccussions

A. Refleection phase an nd BM
Figg. 4. Calculated (a
a) E and (b) T0 sp
pectra for n3 = 1.0
0, p = 1560 nm, an nd We disscuss first the ab bsence/presencee of the BM in terms of the
ws = 43.3 nm for se everal values of h.
h The solid and dashed
d lines are the
t reflectioon phase for thee slit mode. For tthe wavelength > R, where
results by CMM an nd RCWA, respecctively. The dotteed and dash-dottted only thhe 0th order diff ffraction is radiaative, moduli of the reflection
lin
nes indicate the position
p of R an
nd SPF, respectivvely. The filled annd coefficieents |1| and | 3| are not small. IIn such cases, thee lowest order
oppen triangles ind dicate the positiion of BM of m = 1 and m = 2 BM is ggiven approximattely by the phasee condition (imagginary part) of
respectively, calcu ulated using the imaginary partt of Eq. (13). The T Eq. (13)) with m = 1 and tthe presence of B BM in the limit of h 0 can be
sppectra were verticcally shifted by a step of 20 in (a) and
a of 0.5 in (b) for
f discusseed in terms of arrg(13)=2. In th he highly asymm metric case (n3
vissual clarity. >> n1), aassuming arg(1) = 0 for simplicitty, arg(3) = 2 iss necessary for
the BM M to exist. In the symmetric struccture, in contrasst, arg(13) =
To see more clea arly the differencce between the tw
wo cases of n3 = 3.6
3 arg(32) = 2 is realized d with arg(3) = . Therefore, it iss important to
annd n3 = 1.0 in the behavior of the BM,B we plotted BM as functions ofo h know th he range of arg(3). It has been sh hown numericallyy that, starting
in Fig. 5 (red dotts). In the case of n3 = 3.6, the lowest order BM B with 0 aat large , arg(3) increases to at R with decreeasing in the
inttersects with R = 1560 nm at a finite h, as discussed above. In case of m (PEC aapproximation)[4 4]. In the case of m = -5, arg(3)
co M does not cross R
ontrast, in the casse of n3 = 1.0, the lowest order BM has beeen shown to reach h a little excess off 2 at R[15].
buut approaches a wavelength
w ger than R in thee limit of h 0 as
long In thee CMM, by consid dering only the 0 0th order diffracttion in G(I,
III)
seeen in Fig. 4.
and negglecting the metaal loss, we can ob
btain an analytic eexpression for
arg(3) as

arg(( 3 ) = + 2 tann 1 b , (15)

wh
here The reflection phasee arg(3) (= arg((1)) for the casee of n3 = 1.0
(gratingg in air) with ws = 43.3 nm iss shown in Fig. 6(c). In this
Z0Yeff Yslit ZY k x 2 n32 k 2
b= 1 S 2 0 2slit . (16) symmettric structure, th he condition for the BM to existt for h 0 is
m S 2
Yeff
S n32k arg(3) = . This condittion is obviously realized in > R, consistently
with Figgs. 4 and 5(b). In nterestingly, Eqs. (15) and (17) p predict that, if
Heere, we also neglected the kx depeendence of Skx, annd wrote |Skx|2 = S2, Yslit / Yefff > S2 is satisfied, bmax is positive aand Max[arg( 3 ))] > . Hence,
whhere S2 can be esstimated roughly to be ws/p. Equaation (16) indicattes a wavellength giving argg(3) = alwayss exists, which gu uarantees the
that, with decreasing k (increasingg ) from kx / n3 (light line, = R at presencce of the BM, in tthe range of > R in the gratingg in symmetric
kx = 2 / p correspponding to norm mal incidence), b and hence arg(3) ambien nt. Though it can nnot be shown aanalytically, for tthe slit mode
deecrease monoton nically, neglecting
g the variation ofo Yslit /Yeff, with
ha consideered here, Yslit / Yeff > S2 is satisfieed for a very wid de range of ws
maaximum value and |m|. The case wherre the condition is not satisfied co ould be a wide
Z 0Yeff slit wheere S2 is large. To check the vvalidity of the p prediction, we
bmax = 1 Yslit S 2 (17)
Yeff perform med a numericaal survey for aarg(3) using E Eq. (11) with
m S2
diffractiion orders up to 20th. An examplle is shown in Figg. 6(d) for ws =
att k = kx / n3 ( = R). Hence arg(3) = 2 is not realized for > R. 468 nm m (=0.3p). It can b be confirmed thaat arg(3) = is realized for a
No ote also that PEC approximation n ( m ) giv ven bmax 0 an nd wide raange (5 to 100 000) of m. For su uch large ws and large |m|, the
SP resoonance at the inteerface does not eexist in the rangee of > R [9].

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Max[arg( 3 )] , consistently with
M w Ref. [4].
Hence, w we can concludee that the presen nce of the BM is essentially an
In practice, the effects from otther diffraction orders
o can mod dify intrinsicc feature in symm metric structures, irrespective off the presence
arrg(3). Figure 6((a) shows arg(3)s obtained ussing Eq. (11) wiith of the SP P resonance.
difffraction orders upu to 20th for the e case of n3 = 3.6 with various ws. In Heree, let us briefly co omment on the aanalytic expressio on for the BM.
the case ws = 0.1p (the case of Fig. 2),2 arg(3) is mucch smaller than 2.2 With th he same simplificcation as for Eq. ((15), the lowest order BM can
Evven with the finitte value of arg(1) (dashed line) taken
t into accouunt, be obtaiined from Eq. (12 2) to be
arrg(13) = 2 is not
n realized, expla aining the disapppearance of the BM
B
forr small h in Fig. 2.
2 One can also see that, with the extremely narro ow k x = n3k 1 + F 2 (18)
33 nm, arg(3) exxceeds slightly 2
sliit, ws = 0.01p = 4.3 .
On the other ha and, for a visible wavelength
w wherre |m| is small an
nd where
heence bmax is large, we can expect to o find a wavelenggth realizing arg(3)
n3
= 2 with more practical
p ws. As an example, arg(3)s in the grating F= S 2 {bm
max cot(qh)} (19)
deesigned for R = 780 nm are sho own in Fig. 6(b). One can see th hat
Z 0Yslit
arrg(3) = 2 is reallized in the rangee of > R with ws = 43.3 nm, so th
hat or
the BM is expected d to exist even for h 0 .
n3 (= n1 ) 2
F= S {bmax + tan(qh / 22)} (20)
Z0Yslit
for the asymmetric and d symmetric strructures, respecttively. For the
asymm metric case, 1 = 1 was assumed ffor simplicity. A ffinite value of
arg(1) can be included as an additional phase to qh. Herre bmax > 0 can
be assuumed as shown above. The cond dition F > 0 corrresponding to
> R iis not satisfied ffor h 0 in the asymmetric casse, while it is
always satisfied in thee symmetric case. The expressio ons (18)-(20)
show exxplicitly that the aasymmetry affeccts strongly the prresence of the
BM throough the reflectioon phase arg(13).

B. Effecct of band gap

The disspersion of BM ggives us a furtheer insight into the origin of its
disappeearance in the asyymmetric case. Fiigure 7(a) showss BM (red line)
and T0 ((gray scale) as fu
unctions of the inn-plane wavenum mber kx for the
case of n3 = 3.6 and h = 100 nm. One caan see that the B BM disappears
when BM seeks to crosss the light line off the correspondiing diffraction
order. A
An important poin nt here is that thee BM in the longeer wavelength
(lower)) branch bends n near kx = 0, sugggesting that the disappearing
shorterr wavelength (u upper) branch n near kx = 0 also o bends. The
bendingg is due to the b band gap caused d by the mixingg between the
crossingg diffraction ordeers. Therefore, inn addition to the nature of the
Figg. 6. Wavelength h dependence off the reflection ph hase arg (3) in the
t asymm metric structure d discussed above, the mixing indu uced band gap
ubstrate side. (a) n3 = 3.6 with various ws (solid linees). Arg (1) for ws =
su enhancees the disappeaarance of the BM M in the upper branch. It is
0.1
1p (dashed line) is also shown. (b b) n3 = 3.6 designeed for R = 780 nm.
n obviouss that the band ggap observed herre is predominan ntly related to
(c)) n3 = 1.0 with ws = 43.3 nm. (d) n3 = 1.0 with ws = 468
4 nm for vario ous the SP iin the grating-sub
ubstrate interfacee, since the light lline in the air-
m. The black dotted lines indicate thhe position of R. side andd the geometricaal FP resonance arre far away from m this range. As
is seen in the T0 spectrra (gray scale maap), the peak alo ong the lower
branch is not visible forr small kx, which iis because the sliit mode is not
exxcited well due to the mismatch h between the slits mode and the t
inccident wave in th
he in-plane symm metry.
Before discussinng the band ga ap in the SP at the substrate-siide
intterface, we commment on the peak ks in T0 and E arouund 780 nm, i.e the
t
2nnd order R seen in Fig. 2. Shown in i Fig. 7(b) are BM
B (red line) and T0
(grray scale) as fun
nctions of kx for thhe short wavelen ngth range. For the
t
caase of h = 100 nmm shown here, the e BM does not dissappear (BM > 2nd
orrder R) because |m| is small (~2 25 at 780 nm). Th he corresponden nce
beetween the peak ini T0 (and E, thou ugh not shown heere) and the BM can c
bee confirmed, man nifesting that the peaks in T0 and E can be explain ned
(w
with the effect in n T0 by the Fano resonance of the corresponding
difffraction order) by the excitation n of the BM in thet whole spectrral
raange. Note that the band gap in the e BM is clearly observed. In additioon,
there is a tiny but a finite jump in th
he BM when it cro oss the light line (kx
~ 0.25 /p), which h comes also from m the SP of the intterface as discusssed
Fig. 8. In on of BMI at the ssubstrate-side in
n-plane dispersio nterface for (a)
neext.
n3 = 3.66 with ws = 0.10pp (43.3 nm), 0.05 5p and 0.01p an nd (b) n3 = 1.0

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with ws = 43.3 nm.

4. Con
nclusion
In this wwork, focusing o on the BM, we d discussed the speectral features
and thee underlying phyysics in the transsmission T0 and the near field
enhanceement E in the m metal gratings on n a semiconducto or substrate. It
was fou und that, for th he telecom and longer wavelen ngth, the BM
disappeears in the thin ggrating and the peeaks in T0 and E are pinned at
R. In coontrast, the BM inn the gratings in air is usually preesent resulting
in specttral peaks at the wavelength of tthe BM longer th han R, though
the peaaks are suppresssed when the BM M sits around SSPF due to the
Fano reesonance. We sho owed that the diffference comes p predominantly
Figg. 7. BM wavelength BM (red lin ne) and the T0 spectra
s (gray scaale from th he dielectric symm metry above and d below the gratin ng and can be
maap) as functions of kx for n3 = 3.6 and h = 100 nm
m around the (a) 1st 1 explaineed in terms of tthe reflection ph hase for the slit mode at the
nd (b) 2nd order R. The green dottted lines indicatee the light line.
an grating--dielectric interfaaces. We also shoowed that the plaasmonic band
gap is laarge in the gratin
ng on a substratee enhancing the d disappearance
of the B
BM.
To confirm the band
b gap and the jump in the BM at a the crossing wiith
Thou ugh we showed d in this article the results for the cases of
the light line obse erved above orig ginate from the SP at the gratin ng-
relativeely narrow slit, th
he discussion mayy also be valid fo or wider slit as
suubstrate interfacee, we calculated thet dispersion off the BMI, of whiich
long as tthe propagating fundamental slit mode is dominaant. In addition,
the real part BMI corresponds to the SP resonancce, at the interfaace
the phyysical picture baseed on the BM anaalysis is valid for a wider range
ussing Eq. (14). The results for n3 = 3.6 with severral values of ws are a
of the w
wavelength and off structural and m material parametters.
shhown in Fig. 8(a). For ws = 0.1p, th he upper branch disappears
d when n it
seeeks to become sh horter than the light
l line. Therefoore, in this case, SP
resonance does no ot exist for norma al incidence in thee range of > R. In APPE NDIX: Electriic field distrib
bution
the case of ws = 0.001p = 4.33 nm, tho ough the upper branch
b exists at kx = The disttributions of the eelectric field in th
he grating correspponding to Fig.
0, a large splitting of
o the BMI is obse erved. In addition
n, a jump in the BM MI 2 were calculated by RCW WA for the waveelength R, SPF, annd BMs. Here,
at the crossing witth the light line, as
a seen Fig. 7(b), is
i clearly observeed. BMs arre calculated alsoo by RCWA. The rresults for each BM are shown
Th herefore, the bannd gap in the BM M shown in Fig. 7 is concluded to be in Fig. 99. As mentioned iin the caption forr Fig. 2, the BMs w with the same
caaused by that in thhe SP (through 3) at the grating-ssubstrate interface. m (m = 2 for h = 400 an nd 500 nm, and m = 1 for h = 300 0 nm) exist at
Th hough the physiical interpretatio on of the jump in the BMI at the t two waavelengths becau use of the FP-SSP coupling. In F Fig. 9, where
cro ossing with the e light line is not clear at pressent, it is obvio ous several reasonable featu ures can be noticeed. For example, tthe number of
nu umerically to be due to the cha ange in the charaacter (radiative or the nod des in the slit corrresponds to m, exxcept for the casee of m = 2 of h
evvanescent) of the e diffraction orde er across the lighht line. We shou uld = 300 n nm, where the refflection phase waas confirmed to b be arg(13) ~
strress that the appearance of the jump is confirm med not to be the t 2 makking the total phase of 4 (m = 2) with 2qh~ 2. The m = 1
art
rtifact in the CMM
M, since it is also obbserved in the RC
CWA calculation. modes for the long wavvelength > 1560 nm involve the sstrong electric
For comparison n, the BMI in the case
c of n3 = 1.0 with
w ws = 43.3 nm m is field, coorresponding to tthe high T0 and E in the spectra (ssee Fig. 2). For
shhown in Fig. 8(b).. Though the ban nd gap at kx ~ 0 is present, it is veery h = 300 0 nm, the field d distributes ratherr equally in the sslit and at the
smmall to see. In adddition, the jump in the BMI at thee crossing with the t grating//substrate interfa face, meaning thaat the BM is a com mposite of the
ligght line is also very small. The erefore, we can conclude that the t FP and SP resonance. W With the increase o of h, field concenttrates more in
op pening of the ban nd gap including g the effect of the jump in the BM MI the slit and then the B BM becomes pu ure cavity-like. Th he composite
wiidens the parame eter range of the BM
B to disappear in the gratings on na behavioor and the crosso over with the inccrease of h are alsso seen in the
higgh-index substra ate. four pan nels for m = 2 of h = 400 and 500 n nm.
The FFP and SP characcters at R and SPPF are not very cleear in the field
distribu ution as seen in n Fig. 10, sincee the system iss not excited
resonan ntly. Nevertheless, it can be confirrmed that the fieeld distributes
more at the gratin ng/substrate interface R for h = 200
2 nm and BM M~ Acknow wledgment. Thee authors are gratteful to Prof. H. F
F. Hofmann for
SPPF for h = 300 nm
m, correspondingg well to the E spectra shown in Fig.
F his valu
uable suggestionss and comments.
2((a). Therefore, wee can summarize e that the physicaal pictures given in
the main text are coonfirmed well by
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