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N-Channel MOSFET
Pb Lead Free Package and Finish
Applications: HF Halogen Free
Automotive VDSS RDS(on)(Max) ID
DC Motor Control
Class D Amplifier
100V 48m 33A
Features: D
RoHS Compliant
Low ON Resistance
Low Gate Charge
Peak Current vs Pulse Width Curve
Inductive Switching Curves G
G
D
S
Ordering Information
PART NUMBER PACKAGE BRAND TO-220 Not to Scale S
FTP540 TO-220 FTP540
V GS Gate-to-Source Voltage 20 V
Single Pulse Avalanche Energy
E AS 260 mJ
L=1.3 mH, ID=20 Amps
I AS Pulsed Avalanche Rating Figure 8 A
Thermal Resistance
Symbol Parameter Maximum Units Test Condition
Water cooled heat sink, P D adjusted for a
R JC Junction-to-Case 1.17 /W peak junction temperature of +175 .
2009 InPower Semiconductor Co., Ltd. Page 1 of 10 FTP540 Preliminary. Mar. 2009
Electrical CharacteristicsT J = 25 unless otherwise specified
OFF Characteristics
Rating
Symbol Parameter Units Test Conditions
Min. Typ. Max.
V DSS Drain-to-Source Breakdown Voltage 100 -- -- V V GS =0V, I D =250A
Reference to 25 ,
BV DSS /T J Bvdss Temperature Coefficient -- 0.71 -- V/
ID=250uA
V DS = 100V, V GS = 0V,
-- -- 25
T a = 25
I DSS Drain-to-Source Leakage Current uA
V DS =80V, V GS = 0V,
-- -- 250
T a = 125
I GSS(F) Gate-to-Source Forward Leakage -- -- +100 V GS =+20V
nA
I GSS(R) Gate-to-Source Reverse Leakage -- -- -100 V GS =-20V
ON Characteristics
Rating
Symbol Parameter Units Test Conditions
Min. Typ. Max.
V GS =10V,I D =16A
R DS(ON) Drain-to-Source On-Resistance -- 43 48 m
(NOTE*4)
V GS(TH) Gate Threshold Voltage 2.0 -- 4.0 V V DS = V GS , I D = 250A
V DS =30V, I D =16A
g fs Forward Transconductance -- 21 -- S
(NOTE*4)
Dynamic Characteristics
Rating
Symbol Parameter Units Test Conditions
Min. Typ. Max.
C iss Input Capacitance -- 1614 -- V GS = 0V
V DS = 25V
C oss Output Capacitance -- 511 -- pF
f = 1.0MHz
Figure 14
C rss Reverse Transfer Capacitance -- 204 --
2009 InPower Semiconductor Co., Ltd. Page 2 of 10 FTP540 Preliminary. Mar. 2009
Source-Drain Diode Characteristics
Rating
Symbol Parameter Units Test Conditions
Min. Typ. Max.
IS Continuous Source Current (Body Diode) -- -- 33 A
Integral pn-diode in
MOSFET
I SM Maximum Pulsed Current (Body Diode) -- -- 110 A
Notes:
2009 InPower Semiconductor Co., Ltd. Page 3 of 10 FTP540 Preliminary. Mar. 2009
Characteristics Curve
1000 150
125
100us
100 100
1ms
10ms 75
100ms
50
10 OPERATION IN THIS AREA MAY
BE LIMITED BY RDS(on)
Tj=MAX RATED Tc=25 C DC
25
1.0 0.0
25 30
Vgs=7.0
Id, Drain Current, Amps
Id, Drain Current, Amps
V
20
Vgs=6.5
V
15 20
10 Vgs=6.0
V
10 Vgs=5.5
5.0 V
Vgs=4.5
V
0.0 0.0
25 50 75 100 125 150 175 0 5 10 15 20 25
Tc, Case Temperature, C
Vds, Drain Source Voltage, Volts
Figure 3 Maximum Continuous Drain Current vs Case
Temperature Figure 4 Typical Output Characteristics
1.00
1.000
50%
20%
Thermal Impedance, Normanlized
10%
0.100
0.100
5% PDM
2%
t1
1% 1 t2
0.010 1
0.010
Single pulse NOTES:
DUTY FACTOR:D=t1/t2
PEAK Tj=PDMZthJCRthJC+TC
0.001
0.001
0.00001
0.00001
0.0001
0.0001
0.001
0.001
0.01
0.01
0.1
0.1
1
1
10
10
2009 InPower Semiconductor Co., Ltd. Page 4 of 10 FTP540 Preliminary. Mar. 2009
100
TRANSCONDUCTANCE MAY FOR TEMPERATURES
LIMIT
ABOVE 25 DERATE PEAK
CURRENT IN THIS REGION FTP540
Idm, Peak Current, Amps
CURRENT AS FOLLOWS:
I = I25 150-TC
125
100
10
10.0E-6 100.0E-6 1.0E-3 10.0E-3 100.0E-3 1.0E+0 10.0E+0
t, Pulse Width, Seconds
Figure 6 Maximum Peak Current Capability
2009 InPower Semiconductor Co., Ltd. Page 5 of 10 FTP540 Preliminary. Mar. 2009
Test Circuit and Waveform:
V
DS
ID
ID
V DS V
Miller GS
Region
VGS
VD D
D.U.T.
V
G S(T H)
1 mA
Qgs Qg d
Q
g
Figure 17.
Figure 7 Gate Charge
Gate Test
Charge Circuit
Test Circuit Figure 8 Gate Charge
Figure Waveform
18. Gate Charge Waveform
VD S
R
L 90%
V DS
V GS
V
DD
R D.U.T.
G 10%
V
GS
Figure
Figure 9 Resistive
19. Resistive Switching
Switching Test Circuit
Test Circuit Figure
Figure1020. Resistive
Resistive Switching
SwitchingWaveforms
Waveform
2009 InPower Semiconductor Co., Ltd. Page 6 of 10 FTP540 Preliminary. Mar. 2009
Test Circuit and Waveform:
di/dt = 100A/A
ID
Double Pulse
D.U.T. VD D
Qrr
L
t
rr
ID
Figure 11 Diode Reverse Recovery Test Circuit Figure 12 Diode Reverse Recovery Waveform
Figure 21. Diode Reverse Recovery Test Circuit
BV
DS S
Series Switch
(MOSFET)
L
I
AS
BVD S S
D.U.T. VDD VD D
Commutating
Diode
0 tAV
V GS 50
IAS
V t
GS p
Figure 13 Undamped Inductive Switching Test Circuit Figure 14 Undamped Inductive Switching Waveform
Figure 23. Unclamped Inductive Switching Test Circuit Figure 24. Uncl amped Inductive Switching Waveforms
2009 InPower Semiconductor Co., Ltd. Page 7 of 10 FTP540 Preliminary. Mar. 2009
Package Information
Unit:
TO-220 Package
2009 InPower Semiconductor Co., Ltd. Page 8 of 10 FTP540 Preliminary. Mar. 2009
Parts Name Hazardous Substance
Pb Hg Cd Cr(VI) PBB PBDE
Limit 0.1% 0.1% 0.01% 0.1% 0.1% 0.1%
Lead Frame
Molding Compound
Chip
Wire Bonding
Solder
2009 InPower Semiconductor Co., Ltd. Page 9 of 10 FTP540 Preliminary. Mar. 2009
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2009 InPower Semiconductor Co., Ltd. Page 10 of 10 FTP540 Preliminary. Mar. 2009