2SK1167, 2SK1168

Silicon N-Channel MOS FET

ADE-208-1253 (Z)
1st. Edition
Mar. 2001

Application

High speed power switching

Features

Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter

Outline

TO-3P

G 1
2
3
1. Gate
2. Drain
(Flange)
S
3. Source
2SK1167, 2SK1168
Absolute Maximum Ratings (Ta = 25C)
Item Symbol Ratings Unit
Drain to source voltage 2SK1167 VDSS 450 V
2SK1168 500
Gate to source voltage VGSS 30 V
Drain current ID 15 A
1
Drain peak current I D(pulse)* 60 A
Body to drain diode reverse drain current I DR 15 A
2
Channel dissipation Pch* 100 W
Channel temperature Tch 150 C
Storage temperature Tstg 55 to +150 C
Notes: 1. PW 10 s, duty cycle 1%
2. Value at TC = 25C

2
 2SK1167, 2SK1168
Electrical Characteristics (Ta = 25C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source 2SK1167 V(BR)DSS 450 V I D = 10 mA, VGS = 0
breakdown voltage 2SK1168 500
Gate to source breakdown V(BR)GSS 30 V I G = 100 A, VDS = 0
voltage
Gate to source leak current I GSS 10 A VGS = 25 V, VDS = 0
Zero gate voltage 2SK1167 I DSS 250 A VDS = 360 V, VGS = 0
drain current 2SK1168 VDS = 400 V, VGS = 0
Gate to source cutoff voltage VGS(off) 2.0 3.0 V I D = 1 mA, VDS = 10 V
Static Drain to source 2SK1167 RDS(on) 0.25 0.36 I D = 8 A, VGS = 10 V *1
on state resistance 2SK1168 0.30 0.40
Forward transfer admittance |yfs| 8 13 S I D = 8 A, VDS = 10 V *1
Input capacitance Ciss 2050 pF VDS = 10 V, VGS = 0,
Output capacitance Coss 600 pF f = 1 MHz
Reverse transfer capacitance Crss 75 pF
Turn-on delay time t d(on) 30 ns I D = 8 A, VGS = 10 V,
Rise time tr 110 ns RL = 3.75
Turn-off delay time t d(off) 150 ns
Fall time tf 70 ns
Body to drain diode forward VDF 1.0 V I F = 15 A, VGS = 0
voltage
Body to drain diode reverse t rr 500 ns I F = 15 A, VGS = 0,
recovery time diF/dt = 100 A/s
Note: 1. Pulse test

3
2SK1167, 2SK1168
Power vs. Temperature Derating Maximum Safe Operation Area
100
150
10
s
Channel Dissipation Pch (W)

30 10
0
PW s

Drain Current ID (A)

D 1
C = m
10 O 10 s
100 pe m
ra s
tio (1
3 n Sh
(T ot
C= )
25
1.0 Operation in this area C
50 )
is limited by RDS (on)

0.3 2SK1168
Ta= 25C 2SK1167
0.1
0 50 100 150 1 3 10 30 100 300 1,000
Case Temperature TC (C) Drain to Source Voltage VDS (V)

Typical Output Characteristics Typical Transfer Characteristics

20 20
10 V VDS = 20 V
5.5 V
Pulse Test
16 6V 16
Pulse Test
Drain Current ID (A)
Drain Current ID (A)

12 5.0 V 12

8 8
4.5 V
75C 25C
4 4
VGS = 4V TC = 25C

0 4 8 12 16 20 0 2 4 6 8 10
Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V)

4
 2SK1167, 2SK1168

Drain to Source Saturation Voltage Static Drain to Source on State

vs. Gate to Source Voltage
Resistance vs. Drain Current
10

Static Drain to Source on State Resistance

5
Pulse Test
Drain to Source Saturation Voltage

Pulse Test
8 2
20 A
1.0
VDS (on) (V)

RDS(on) ()
6
VGS = 10 V
0.5
4
10 A
0.2 15 V
2 ID = 5 A
0.1

0.05
0 4 8 12 16 20 1 2 5 10 20 50 100
Gate to Source Voltage VGS (V) Drain Current ID (A)

Static Drain to Source on State

Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current
1.0
Static Drain to Source on State Resistance

50
Forward Transfer Admittance yfs (S)

VGS = 10 V VDS = 20 V 25C

0.8 Pulse Test 20 Pulse Test TC = 25C
75C
ID = 20 A 10
RDS (on) ()

0.6
5
10 A
0.4
5A
2
0.2
1.0

0 0.5
40 0 40 80 120 160 0.2 0.5 1.0 2 5 10 20
Case Temperature TC (C) Drain Current ID (A)

5
2SK1167, 2SK1168

Body to Drain Diode Reverse Typical Capacitance

Recovery Time vs. Drain to Source Voltage
5,000 10,000
VGS = 0
di/dt = 100 A/s, Ta = 25C
Reverse Recovery Time trr (ns)

f = 1 MHz
VGS = 0
2,000 Ciss
Pulse Test

Capacitance C (pF)
1,000 1,000

500 Coss

200 100

100
Crss
50 10
0.2 0.5 1.0 2 5 10 20 0 10 20 30 40 50
Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V)

Dynamic Input Characteristics Switching Characteristics

500 20 1,000
Drain to Source Voltage VDS (V)

VDD = 100 V VGS = 10 V, VDD 30 V

Gate to Source Voltage VGS (V)

500 PW = 2 s, duty < 1%

400 250 V 16
Switching Time t (ns)

VDS t d (off)
400 V 200
300 12
VGS tr
100 tf

200 8
50
t d (on)
ID = 15 A
100 VDD = 400 V 4
250 V 20
100 V
0 10
0 20 40 60 80 100 0.5 1.0 2 5 10 20 50
Gate Charge Qg (nc) Drain Current ID (A)

6
 2SK1167, 2SK1168

Reverse Drain Current vs.

Source to Drain Voltage
20

Reverse Drain Current IDR (A)

Pulse Test
16

12

4
5 V, 10 V
VGS = 0, 10 V
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance S (t)

Normalized Transient Thermal Impedance vs. Pulse Width

3

D=1 TC = 25C
1.0
0.5

0.3 0.2
0.1 chc (t) = S(t) chc
0.1 0.05 chc = 1.25C/W,TC = 25C
PDM
0.02
0.03 0 . 0 1 ulse D = PW
ot P T
1Sh PW
T
0.01
10 100 1m 10 m 100 m 1 10
Pulse Width PW (s)

Switching Time Test Circuit

Wavewforms
Vin Monitor
90 %
Vout Monitor
D.U.T
RL Vin 10 %

Vout 10 % 10 %
50
. 30 V 90 % 90 %
Vin = 10 V VDD =.
td (on) tr td (off) tf

7
2SK1167, 2SK1168

Package Dimensions

As of January, 2001

5.0 0.3
15.6 0.3 4.8 0.2 Unit: mm
3.2 0.2 1.5

1.0
0.5

19.9 0.2
14.9 0.2

0.3
2.0

1.6

1.4 Max 2.0

2.8
18.0 0.5

1.0 0.2 0.6 0.2

3.6 0.9
1.0

5.45 0.5 5.45 0.5

Hitachi Code TO-3P
JEDEC
EIAJ Conforms
Mass (reference value) 5.0 g

8
 2SK1167, 2SK1168

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachis or any third partys patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third partys rights, including
intellectual property rights, in connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachis sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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written approval from Hitachi.
7. Contact Hitachis sales office for any questions regarding this document or Hitachi semiconductor
products.

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