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  • Irfp460 PDF

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    jhonnygarcia634
    23 vues6 pages

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    IRFP460.pdf

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    23 vues6 pages

    Irfp460 PDF

    Transféré par

    jhonnygarcia634

    Droits d'auteur :

    © All Rights Reserved
    Téléchargez comme PDF ou lisez en ligne sur Scribd
    Signaler comme contenu inapproprié
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    tact lp Eee zor] Rectifier IRFP460 HEXFET® Power MOSFET © Dynamic dv/dt Rating © Repetitive Avalanche Rated ° . Isolated Central Mounting Hole Vpss = 500V © Fast Switching © Ease of Paralleling a Rpg(on) = 0.272 © Simple Drive Requirements A Ip =20A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-tesistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated AN mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications. TO-247AC, Absolute Maximum Ratings Parameter Max. Units Continuous Drain Current, Ves @ 10 V Continuous Drain Current, Ves @ 10 V A Pulsed Drain Current © Power Dissipation Ww Linear Derating Factor Wr Ves Gate-to-Source Voltage lv Eas ‘Single Pulse Avalanche Energy ® md las Avalanche Current © A Ea Repetitive Avalanche Energy © PEE PEeEEEeE-eeH| Een. dviat Peak Diode Recovery dviat © fH PPE HEHEHE] vi Ts ‘Operating Junction and “55 10 +150 Tore Storage Temperature Range Hp EreHEe _| Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting Torque, 6-92 or M3 screw 10 Ibfein (1.1 Nem) Thermal Resistance Parameter L_Typ. Max. Units Rac Junction-to-Case oie Pee 0.45 Recs Case-10-Sink, Flat, Greased Surface = 0.24 = cow [Rua __| Junction-to-Ambient _— = 40 1025 IRFP460 TOR Electrical Characteristics @ Ty = 25°C (unless otherwise specified) Parameter Min] Typ. | Max. | Unite Test Conditions Viesoss _| Drain-to Source Breakdown Volage | 500 | — | — | V_|Vas<0¥, In= 250uA AVienose/ATy Breakdown Vollage Temp. Coefficient | — | 063 | — | VPC |Relerence to 26°C, Io= mA Rosin | Statio Drainto-Source On-Resistance | — | — [0271 @ |Ves=10V, b=12A @ Vesen Gate Threshold Vokage 20 | — | 40 | V_|Vos-Ves, lo= 25018 Ge Forward Transoonduclance 73) — | — |S | Vos=50V, Io=12a © toss Drain-to-Source Leakage Current ——— & OV, Ves OV i == Tito Gaie-to-Source Reverse Leakage = [= [100 a Total Gate Charge = [= [210 Oye Gate-t0-Source Onarge = [= [29 Ose Gate-to-Drain (‘Miller’) Charge: =| = [10 aon Turn-On Delay Time =e te Rise Time: =| |= [ae Tum-Off Delay Time = ftw [— Rona. tu Fall Time. = [se |= Riox130_See Figure 100 Lo Internal Drain Inductance — | 50) — een eae ek nH | from package ep Ls Internal Source Inductance —fa}e aenate * Cis input Capacitance = e00, — Coss ‘Output Capacitance = 870 — | oF Cus Reverse Transfer Capacitance = 350 | — f=1.0MHz See Figure 5 Source-Drain Ratings and Characteristics Parameter Min] Typ. | Max. | Unis “Test Conditions 5 Continuous Source Current rare e | MOSFET symbol (Body Diode) ‘a. | Showing the an Toa Pulsed Source Current ae (eee eae integral reverse y (Body Diods) @ |p-n junction diode. s Vso Diode Forward Vollage 8 [VT 25°C, 12208, Vesov © te Fieverse Recovery Time — [870 | 860 | ns T,H25°C, l=208 Or Roverse Recovery Charge — | 57 | 86 | uC dildtet00AKs @ ten Forward Tum-On Time [Intinsic turn-on time fs neglegible (urvon is dominated by Leva) Notes: © Repetitive rating: pulse wiath limited by @ Isps20A, diets 160A/us, Voo

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