FQA8N100C 1000V N-Channel MOSFET

September 2005

QFET
FQA8N100C
1000V N-Channel MOSFET
Features Description
8A, 1000V, RDS(on) = 1.45 @VGS = 10 V These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchilds proprietary, planar stripe,
Low gate charge (typical 53 nC)
DMOS technology.
Low Crss (typical 16 pF)
This advanced technology has been especially tailored to mini-
Fast switching mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
100% avalanche tested
commutation mode. These devices are well suited for high effi-
Improved dv/dt capability cient switched mode power supplies.

D
!

"

! "
G! "
"

TO-3P !
G DS FQA Series S

Absolute Maximum Ratings

Symbol Parameter FQA8N100C Unit
VDSS Drain-Source Voltage 1000 V
ID Drain Current - Continuous (TC = 25C) 8 A
- Continuous (TC = 100C) 5 A
IDM Drain Current - Pulsed (Note 1) 32 A
VGSS Gate-Source voltage 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 850 mJ
IAR Avalanche Current (Note 1) 8 A
EAR Repetitive Avalanche Energy (Note 1) 22.5 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns
PD Power Dissipation (TC = 25C) 225 W
- Derate above 25C 1.79 W/C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 C
TL Maximum Lead Temperature for Soldering Purpose,
300 C
1/8 from Case for 5 Seconds

Thermal Characteristics
Symbol Parameter Min. Max. Unit
RJC Thermal Resistance, Junction-to-Case -- 0.56 C/W
RCS Thermal Resistance, Case-to-Sink 0.24 -- C/W
RJA Thermal Resistance, Junction-to-Ambient -- 40 C/W

2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FQA8N100C Rev. A
 FQA8N100C 1000V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FQA8N100C FQA8N100C TO-3P -- -- 30

Electrical Characteristics TC = 25C unless otherwise noted

Symbol Parameter Conditions Min. Typ. Max Units

Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 1000 -- -- V
BVDSS Breakdown Voltage Temperature
ID = 250A, Referenced to 25C -- 1.4 -- V/C
/ TJ Coefficient
IDSS Zero Gate Voltage Drain Current VDS = 1000V, VGS = 0V -- -- 10 A
VDS = 800V, TC = 125C -- -- 100 A
IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A 3.0 -- 5.0 V
RDS(on) Static Drain-Source
VGS = 10V, ID = 4A -- 1.2 1.45
On-Resistance
gFS Forward Transconductance VDS = 50V, ID = 4A (Note 4) -- 8.0 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25V, VGS = 0V, -- 2475 3220 pF
Coss f = 1.0MHz
Output Capacitance -- 195 255 pF
Crss Reverse Transfer Capacitance -- 16 24 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 500V, ID = 8A -- 50 110 ns
RG = 25
tr Turn-On Rise Time -- 95 200 ns
td(off) Turn-Off Delay Time -- 122 254 ns
(Note 4, 5)
tf Turn-Off Fall Time -- 80 170 ns
Qg Total Gate Charge VDS = 800V, ID = 8A -- 53 70 nC
Qgs Gate-Source Charge VGS = 10V -- 13 -- nC
Qgd Gate-Drain Charge (Note 4, 5) -- 23 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current -- -- 8 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 32 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 8A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0V, IS = 8A -- 620 -- ns
dIF/dt =100A/s (Note 4)
Qrr Reverse Recovery Charge -- 5.2 -- C
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 25mH, IAS = 8A, VDD = 50V, RG = 25, Starting TJ = 25C
3. ISD 8A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
4. Pulse Test: Pulse width 300s, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics

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FQA8N100C Rev. A
 FQA8N100C 1000V N-Channel MOSFET
Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V 1
1
10 6.5 V
10
6.0 V
Bottom : 5.5 V

ID, Drain Current [A]

ID, Drain Current [A]

o
150 C

0 o
10 0 25 C
10
o
-55 C

Notes : Notes :
1. 250 s Pulse Test 1. VDS = 50V
-1 2. TC = 25
10 2. 250 s Pulse Test

-1
10
10
-1
10
0
10
1 2 4 6 8 10

VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue

3.0
Drain-Source On-Resistance

2.5 1
IDR, Reverse Drain Current [A]

10

VGS = 10V
RDS(ON) [ ],

2.0

1.5 10
0

VGS = 20V
150 25
1.0 Notes :
1. VGS = 0V
Note : TJ = 25 2. 250 s Pulse Test

-1
0.5 10
0 5 10 15 20 25 0.2 0.4 0.6 0.8 1.0 1.2 1.4

ID, Drain Current [A] VSD, Source-Drain voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

4000 12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd VDS = 200V
3500 Crss = Cgd
10 VDS = 500V
VGS, Gate-Source Voltage [V]

Ciss
3000
VDS = 800V
8
Capacitance [pF]

2500

2000 Coss 6

1500 Notes :
1. VGS = 0 V 4
2. f = 1 MHz
1000
Crss
2
500
Note : ID = 8A

0 0
10
-1
10
0
10
1 0 10 20 30 40 50 60 70

VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]

3 www.fairchildsemi.com
FQA8N100C Rev. A
 FQA8N100C 1000V N-Channel MOSFET
Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

1.2 3.0
Drain-Source Breakdown Voltage

2.5

Drain-Source On-Resistance
1.1
BVDSS, (Normalized)

RDS(ON), (Normalized)
2.0

1.0 1.5

1.0
0.9 Notes :
1. VGS = 0 V Notes :
2. ID = 250 A 0.5 1. VGS = 10 V
2. ID = 4 A

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature

Operation in This Area

10
2 is Limited by R DS(on) 8

10 s
100 s
ID, Drain Current [A]

ID, Drain Current [A]

10
1 6
1 ms
10 ms
DC
10
0
4

-1 Notes :
10 o 2
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse

-2
10 0
0 1 2 3
10 10 10 10 25 50 75 100 125 150

VDS, Drain-Source Voltage [V] TC, Case Temperature []

Figure 11. Transient Thermal Response Curve

0
10

D = 0 .5
Z JC(t), Thermal Response

0 .2 N o te s :
-1 1 . Z JC (t) = 0 .5 6 /W M a x.
10
2 . D u ty F a c to r, D = t 1 /t 2
0 .1 3 . T J M - T C = P D M * Z JC (t)

0 .0 5 PDM

0 .0 2 t1
t2
0 .0 1
-2
s in g le p u ls e
10

-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]

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FQA8N100C Rev. A
 FQA8N100C 1000V N-Channel MOSFET
Gate Charge Test Circuit & Waveform

VGS
Same Type
50K
as DUT Qg
12V 200nF
300nF 10V
VDS
VGS Qgs Qgd

DUT
3mA

Charge

Resistive Switching Test Circuit & Waveforms

RL VDS
VDS 90%

VGS VDD
RG

10%
VGS
10V DUT
td(on) tr td(off)
tf
t on t off

Unclamped Inductive Switching Test Circuit & Waveforms

L BVDSS
1
VDS EAS = ---- L IAS2 --------------------
2 BVDSS - VDD
BVDSS
ID
IAS
RG
VDD ID (t)

10V DUT VDD VDS (t)

tp
tp Time

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FQA8N100C Rev. A
 FQA8N100C 1000V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT +

VDS

I SD
L

Driver
RG
Same Type
as DUT VDD

VGS dv/dt controlled by RG

ISD controlled by pulse period

Gate Pulse Width

VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current

I SD
( DUT ) di/dt

IRM

Body Diode Reverse Current

VDS
( DUT ) Body Diode Recovery dv/dt

VSD VDD

Body Diode
Forward Voltage Drop

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FQA8N100C Rev. A
 FQA8N100C 1000V N-Channel MOSFET
Mechanical Dimensions

TO-3P
15.60 0.20
4.80 0.20
13.60 0.20

3.80 0.20
3.20 0.10 +0.15
9.60 0.20 1.50 0.05

18.70 0.20
12.76 0.20

19.90 0.20

23.40 0.20
13.90 0.20

2.00 0.20
3.50 0.20

3.00 0.20
16.50 0.30

1.00 0.20 1.40 0.20

+0.15
0.60 0.05
5.45TYP 5.45TYP
[5.45 0.30] [5.45 0.30]

Dimensions in Millimeters

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FQA8N100C Rev. A
 FQA8N100C 1000V N-Channel MOSFET
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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I16

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FQA8N100C Rev. A