New Product

U1B, U1C & U1D

Vishay General Semiconductor

Surface Mount Ultrafast Plastic Rectifier

FEATURES
Oxide planar chip junction
Ultrafast recovery time
Low forward voltage, low power losses
High forward surge capability
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 C

DO-214AC (SMA) Solder dip 260 C, 40 s

Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC

TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier
PRIMARY CHARACTERISTICS of switching power supplies, freewheeling diodes,
IF(AV) 1.0 A dc-to-dc converters or polarity protection application.
VRRM 100 V, 150 V, 200 V
IFSM 30 A MECHANICAL DATA
trr 15 ns Case: DO-214AC (SMA)
VF at IF = 1.0 A 0.76 V Epoxy meets UL 94V-0 flammability rating
TJ max. 150 C
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: Color band denotes cathode end

MAXIMUM RATINGS (TA = 25 C unless otherwise noted)

PARAMETER SYMBOL U1B U1C U1D UNIT
Device marking code U1B U1C U1D
Maximum repetitive peak reverse voltage VRRM 100 150 200 V
Maximum average forward rectified current (Fig. 1) IF(AV) 1.0 A
Peak forward surge current 8.3 ms single half sine-wave
IFSM 30 A
superimposed on rated load
Operating junction and storage temperature range TJ, TSTG - 55 to + 150 C

Document Number: 89065 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 13-May-08 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com 1
 New Product
U1B, U1C & U1D
Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
IF = 0.6 A 0.82 0.87
TA = 25 C
IF = 1.0 A 0.87 0.92
(1)
Instantaneous forward voltage VF V
IF = 0.6 A 0.71 0.78
TA = 100 C
IF = 1.0 A 0.76 0.84
TA = 25 C - 5.0
Reverse current (2) rated VR IR A
TA = 100 C 55 100
IF = 0.5 A, IR = 1.0 A,
TA = 25 C trr - 15 ns
Irr = 0.25 A
Reverse recovery time
IF = 0.6 A, dI/dt = 50 A/s, TA = 25 C 24 -
trr ns
VR = 30 V, Irr = 0.1 IRM TA = 100 C 29 -
IF = 0.6 A, dI/dt = 50 A/s, TA = 25 C 7 -
Storage charge Qrr nC
VR = 30 V, Irr = 0.1 IRM TA = 100 C 13 -
Typical junction capacitance 4.0 V, 1 MHz CJ 6.8 - pF

Notes:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms

THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted)

PARAMETER SYMBOL U1B U1C U1D UNIT
RJA 115
Typical thermal resistance (1) C/W
RJM 22
Note:
(1) Free air, mounted on recommended copper pad area

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
U1D-E3/61T 0.064 61T 1800 7" diameter plastic tape and reel
U1D-E3/5AT 0.064 5AT 7500 13" diameter plastic tape and reel

RATINGS AND CHARACTERISTICS CURVES

(TA = 25 C unless otherwise noted)

1.2 1.0
D = 0.8
D = 0.5
Average Forward Current (A)

1.0 D = 0.3
0.8
Average Power Loss (W)

D = 0.2
D = 1.0
0.8
D = 0.1
0.6

0.6

0.4
0.4 T

0.2
0.2
D = tp/T tp
0 0
80 90 100 110 120 130 140 150 0 0.2 0.4 0.6 0.8 1.0 1.2
TM - Mount Temperature (C) Average Forward Current (A)

Figure 1. Forward Derating Curve Figure 2. Forward Power Loss Characteristics

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 89065
2 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Revision: 13-May-08
 New Product
U1B, U1C & U1D
Vishay General Semiconductor

10 10
Instantaneous Forward Current (A)

TA = 150 C

Junction Capactiance (pF)

1 TA = 125 C

TA = 100 C

0.1 TA = 25 C

TJ = 25 C
f = 1.0 MHz
Vstg = 50 mVp-p
0.01 1
0.1 0.3 0.5 0.7 0.9 1.1 1.3 0.1 1 10 100
Instantaneous Forward Voltage (V) Reverse Voltage (V)

Figure 3. Typical Instantaneous Forward Characteristics Figure 5. Typical Junction Capacitance

1000 100

Transient Thermal Impedance (C/W)

Junction to Ambient
Instantaneous Reverse Current (A)

TA = 150 C
100 TA = 125 C

TA = 100 C
10
10

TA = 25 C
0.1

0.01 1
10 20 30 40 50 60 70 80 90 100 0.001 0.01 0.1 1 10 100

Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s)

Figure 4. Typical Reverse Characteristics Figure 6. Typical Transient Thermal Impedance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

DO-214AC (SMA)
Cathode Band
Mounting Pad Layout

0.066 (1.68) 0.074 (1.88)

MIN. MAX.
0.065 (1.65) 0.110 (2.79)
0.049 (1.25) 0.100 (2.54)

0.177 (4.50)
0.157 (3.99)
0.060 (1.52)
0.012 (0.305)
MIN.
0.006 (0.152)

0.208 (5.28)
0.090 (2.29) REF.
0.078 (1.98)

0.060 (1.52)
0.030 (0.76) 0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)

Document Number: 89065 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 13-May-08 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com 3
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Vishay

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All product specifications and data are subject to change without notice.

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or in any other disclosure relating to any product.

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Document Number: 91000 www.vishay.com

Revision: 18-Jul-08 1